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元器件品牌
2SK2157
[NEC]
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING; N沟道MOS FET，用于高速开关
元器件型号：
2SK2157
生产厂家：
NEC
描述和应用：
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
N沟道MOS FET，用于高速开关
开关
PDF文件：
总6页 (文件大小：62K)
下载文档：
下载PDF数据表文档文件
型号参数：2SK2157参数
查看货源
2SK2157C
N-CHANNEL MOSFET FOR SWITCHING
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2
RENESAS
2SK2157C-T1-AY
N-CHANNEL MOSFET FOR SWITCHING
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1
RENESAS
2SK2157C-T1-AZ
N-CHANNEL MOSFET FOR SWITCHING
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156
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0
RENESAS
2SK2158
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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672
NEC
2SK2158
MOS Field Effect Transistor
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58
KEXIN
2SK2158
Capable of drive gate with 1.5 V Because of high input impedance, there is no need
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133
TYSEMI
2SK2158-A
100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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RENESAS
2SK2158A-T1B
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
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RENESAS
2SK2158A-T1B-AT
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINI MOLD, SC-59, 3 PIN
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0
RENESAS
2SK2158A-T2B
TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346
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1
RENESAS
2SK2158A-T2B-AT
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MINI MOLD, SC-59, 3 PIN
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0
RENESAS
2SK2159
Capable of drive gate with 1.5 V Small RDS(on) RDS(on) = 0.7 MAX.VGS = 1.5 V, ID = 0.1 A
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21
TYSEMI
2SK2159
MOS Field Effect Transistor
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40
KEXIN
2SK2159
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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256
NEC
2SK2159-AZ
Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NEC
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