2SK293
更新时间:2024-09-18 18:59:41
品牌:NEC
描述:Power Field-Effect Transistor, 7A I(D), 300V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TC-3, TB-3, C14A, B18, 3 PIN
2SK293 概述
Power Field-Effect Transistor, 7A I(D), 300V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TC-3, TB-3, C14A, B18, 3 PIN 功率场效应晶体管
2SK293 规格参数
生命周期: | Obsolete | 零件包装代码: | TO-204AA |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 300 V |
最大漏极电流 (ID): | 7 A | 最大漏源导通电阻: | 1.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
2SK293 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SK2930 | HITACHI | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2930 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2930-E | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2931 | HITACHI | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2931 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2931-E | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2932 | HITACHI | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2932 | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2932-E | RENESAS | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 | |
2SK2933 | HITACHI | Silicon N Channel MOS FET High Speed Power Switching | 获取价格 |
2SK293 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6