概述
数据手册2SK3058-S 概述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 切换N沟道功率MOS FET工业用
2SK3058-S 数据手册
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MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SK3058
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE
TO-220AB
TO-262
2SK3058-S
FEATURES
• Super Low On-State Resistance
2SK3058-ZJ
TO-263
DS(on)1
GS
D
R
R
= 17 mΩ MAX. (V = 10 V, I = 28 A)
DS(on)2
GS
D
= 27 mΩ MAX. (V = 4.0 V, I = 28 A)
iss
iss
• Low C : C = 2100 pF (TYP.)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
GS
DSS
Drain to Source Voltage (V = 0)
V
60
V
DS
GSS(AC)
Gate to Source Voltage (V = 0)
V
V
±20
+20, –10
±55
V
V
DS
GSS(DC)
Gate to Source Voltage (V = 0)
D(DC)
I
Drain Current (DC)
A
Drain Current (Pulse) Note1
D(pulse)
I
±165
A
C
T
Total Power Dissipation (T = 25°C)
P
58
W
W
°C
°C
A
A
T
P
Total Power Dissipation (T = 25°C)
1.5
ch
Channel Temperature
T
150
stg
Storage Temperature
T
–55 to + 150
27.5
Single Avalanche Current Note2
Single Avalanche Energy Note2
AS
I
AS
E
75.6
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, R = 25 Ω, V = 20 V → 0
G
GS
THERMAL RESISTANCE
th(ch-C)
Channel to Case
R
2.16
83.3
°C/W
°C/W
th(ch-A)
R
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13097EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
1998, 1999
©
2SK3058
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
TEST CONDITIONS
VGS = 10 V, ID = 28 A
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
12
19
1.6
42
17
27
mΩ
mΩ
V
VGS = 4.0 V, ID = 28 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 28 A
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
1.0
13
2.0
S
10
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
IGSS
±10
Ciss
2100
550
220
36
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
F = 1 MHz
td(on)
tr
td(off)
tf
ID = 28 A
Rise Time
VGS(on) = 10 V
410
130
260
45
Turn-off Delay Time
VDD = 30 V
Fall Time
RG = 10 Ω
Total Gate Charge
QG
ID = 55 A
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VDD = 48 V
7
VGS = 10 V
13
IF = 55 A, VGS = 0 V
IF = 55 A, VGS = 0 V
di/dt = 100A/µs
1.0
60
ns
nC
Qrr
100
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
GS(on)
V
GS
Wave Form
V
10%
0
R
G
PG.
PG.
50 Ω
V
DD
R = 10 Ω
G
V
DD
V
GS = 20→0V
I
D
90%
90%
10%
I
D
V
0
GS
BVDSS
10%
I
D
0
Wave Form
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1 %
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
RL
PG.
50 Ω
V
DD
2
Data Sheet D13097EJ1V0DS00
2SK3058
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
100
80
60
40
20
0
20 40 60 80 100 120 140 160
- Case Temperature - °C
0
20 40 60 80 100 120 140 160
T
C
TC - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
Pulsed
1000
100
100
80
60
40
20
V
GS = 10 V
I
D(pulse) = 165A
V
GS = 4.0V
I
D(DC) = 55A
10
1
T
C
= 25˚C
Single Pulse
2
4
0
3
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
1
T
A
= 125˚C
75˚C
25˚C
−25˚C
0.1
Pulsed
V
DS = 10V
0
1
2
3
4 5
V
GS - Gate to Source Voltage - V
3
Data Sheet D13097EJ1V0DS00
2SK3058
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
R
th(ch-A)= 83.3˚C/W
Rth(ch-C)= 2.16˚C/W
1
0.1
0.01
T
C
= 25˚C
Single Pulse
0.001
100
10µ
µ
1m
10m
100m
1
10
100
1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
10
Pulsed
70
T
ch = −25˚C
25˚C
60
50
40
30
20
10
75˚C
125˚C
1
V
DS =10V
I
D
=28A
20
Pulsed
0.1
0.1
1.0
10
100
0
10
30
I
D
- Drain Current - A
V
GS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
80
60
40
20
0
Pulsed
V
DS = 10V
I
D
= 1mA
2.0
1.5
1.0
V
GS =4.0V
0.5
0
V
GS =10V
0.1
1
10
100
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D13097EJ1V0DS00
2SK3058
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
40
30
100
10
1
V
GS = 4.0V
V
GS = 10V
20
10
V
GS = 10V
V
GS = 0V
0.1
I
D
= 28A
Pulsed
1.5
VSD - Source to Drain Voltage - V
0
0
0
−50
0.5
1
100
150
50
T
ch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100 000
10 000
V
DD = 30V
GS = 10V
= 10Ω
V
GS = 0 V
V
f = 1MHz
10 000
1 000
R
G
tr
f
t
C
iss
t
d(off)
100
10
1 000
100
t
d(on)
Coss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
60
40
20
1 000
100
16
di/dt=100A/
µ
s
ID = 55A
V
GS =0 V
14
12
10
8
V
DD = 12 V
30 V
48 V
6
10
1
4
2
0
0
20
40
60
80
0.1
1
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
5
Data Sheet D13097EJ1V0DS00
2SK3058
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
160
140
120
100
80
100
10
V
R
V
I
DD = 30V
= 25Ω
GS = 20 V → 0 V
AS ≤ 27.5A
G
I
AS = 27.5A
60
1.0
0.1
40
V
DD = 30V
20
V
GS = 20V→0 V
R
GS = 25Ω
0
10µ
100µ
1m
10m
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
6
Data Sheet D13097EJ1V0DS00
2SK3058
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0
4.8 MAX.
1.3±0.2
(10)
4
φ
3.6±0.2
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
2.8±0.2
1.Gate
2.Drain
2.54 TYP.
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
4.8 MAX.
(10)
4
1.3±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
1.4±0.2
0.7±0.2
0.5±0.2
Gate
Protection
Diode
2.54 TYP.
2.54 TYP.
1
2
3
Source
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
7
Data Sheet D13097EJ1V0DS00
2SK3058
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
2SK3058-S 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SK3058-Z | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263ABVAR | 获取价格 |
|
| 2SK3058-Z-AZ | NEC | Power Field-Effect Transistor, 55A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN | 获取价格 |
|
| 2SK3058-Z-E2-AZ | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,55A I(D),TO-263ABVAR | 获取价格 |
|
| 2SK3058-ZJ | NEC | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | 获取价格 |
|
| 2SK3058-ZJ-AZ | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,55A I(D),TO-263AB | 获取价格 |
|
| 2SK3058-ZJ-E1-AZ | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,55A I(D),TO-263AB | 获取价格 |
|
| 2SK3059 | NEC | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE | 获取价格 |
|
| 2SK3059-AZ | NEC | Power Field-Effect Transistor, 50A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-45F, ISOLATED TO-220, 3 PIN | 获取价格 |
|
| 2SK3060 | NEC | MOS FIELD EFFECT TRANSISTOR | 获取价格 |
|
| 2SK3060 | RENESAS | 70A, 60V, 0.02ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | 获取价格 |
|
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