2SK3111-S 概述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 切换N沟道功率MOS FET工业用 功率场效应晶体管
2SK3111-S 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-262AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
2SK3111-S 数据手册
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PDF下载DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3111
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
ORDERING INFORMATION
The 2SK3111 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter, actuator driver.
PART NUMBER
2SK3111
PACKAGE
TO-220AB
TO-262
2SK3111-S
2SK3111-ZJ
TO-263
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
R
DS(on) = 180 mΩ MAX. (VGS = 10 V, I
• Low input capacitance
iss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
D
= 10 A)
C
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V)
Gate to source voltage (VDS = 0 V)
V
DSS
200
±30
V
V
VGSS
Drain current (DC) (T
C
= 25 °C)
I
I
D(DC)
±20
A
Drain current (pulse) Note1
Total power dissipation (T
Total power dissipation (T
Channel temperature
D(pulse)
±60
A
A
C
= 25 °C)
= 25 °C)
P
T1
T2
1.5
W
W
°C
°C
A
P
65
T
ch
150
Storage temperature
T
stg
−55 to +150
20
Single avalanche current Note2
Single avalanche energy Note2
I
AS
E
AS
100
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, R
G
= 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
Document No. D13334EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
1998, 2000
©
Printed in Japan
2SK3111
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Characteristics
Drain Leakage Current
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Test Conditions
VDS = 200 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 10 A
VGS = 10 V, ID = 10 A
VDS = 10 V
MIN.
TYP.
MAX.
100
±10
4.5
Unit
µA
µA
V
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
2.5
3.0
S
120
1000
300
150
25
180
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 100 V
Rise Time
ID = 10 A
90
Turn-off Delay Time
VGS(on) = 10 V
80
Fall Time
RG = 10 Ω
40
Total Gate Charge
QG
VDD = 160 V
40
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
7
ID = 20 A
25
IF = 20 A, VGS = 0 V
IF = 20 A, VGS = 0 V
di/dt = 50 A/µs
1.0
300
1.7
ns
µC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
GS(on)
V
GS
Wave Form
V
10%
0
R
G
PG.
PG.
50 Ω
V
DD
R = 10 Ω
G
V
DD
VGS = 20→0V
I
D
90%
90%
10%
I
D
V
0
GS
BVDSS
10%
I
D
0
Wave Form
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1 %
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D13334EJ1V0DS00
2SK3111
★
TYPICAL CHARACTERISTICS (TA = 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
70
100
10
Pulsed
V
DS = 10 V
Pulsed
60
VGS = 30 V
50
40
1
VGS = 10 V
30
20
T
ch = 125 ˚C
75 ˚C
0.1
25 ˚C
-25 ˚C
0.01
0.001
10
0
0
10
20
30
0
5
10
VDS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
10
5.0
4.5
V
DS = 10 V
V
DS = 10 V
Pulsed
I
D
= 1 mA
T
ch = −25 ˚C
25 ˚C
75 ˚C
4.0
3.5
3.0
2.5
2.0
125 ˚C
1
0.1
0.01
0.01
0.1
1
10
100
−50
0
50
100
150
ID- Drain Current - A
T
ch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
600
500
Pulsed
500
400
300
200
100
0
400
300
200
100
I
D
= 20 A
10 A
4 A
V
GS = 10 V
GS = 30 V
V
Pulsed
100
0
0.1
1
10
0
2
4
6
8
10 12 14 16 18 20
VGS - Gate to Source Voltage - V
ID - Drain Current - A
3
Data Sheet D13334EJ1V0DS00
2SK3111
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
350
100
10
1
Pulsed
300
250
200
I = 20 A
D
VGS = 10 V
ID = 10 A
0 V
150
100
50
VGS = 10 V
Pulsed
0
0.1
−50
0
50
100
150
0.0
0.5
1.0
1.5
T
ch - Channel Temperature - ˚C
V
SD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
100
1000
100
t
r
t
d(off)
C
iss
t
f
t
d(on)
10
1
C
oss
rss
C
V
=100 V
DD =10 V
GS= 10 Ω
V
GS = 0 V
V
f = 1 MHz
R
G
10
0.1
0.1
1
10
100
1
10
100
1000
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
200
150
100
50
16
di/dt=50A/ µs
VGS =0V
14
12
10
8
V
GS
V
DD = 160 V
100 V
40 V
6
10
1
4
2
0
V
DS
I
D
= 20 A
50
0
0.1
1
10
100
0
10
20
30
40
60
I
F
- Diode Current - A
Q
G
- Gate Charge - nC
4
Data Sheet D13334EJ1V0DS00
2SK3111
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
100
80
60
40
20
0
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
0
T
C
- Case Temperature - ˚C
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
(pulse)
100
10
1
ID
ID(DC)
TC
= 25 ˚C
Single Pulse
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R
th(ch-A) = 83.3 ˚C/W
10
1
R
th(ch-C) = 1.92 ˚C/W
0.1
Single Pulse
100 1000
0.01
10µ
100µ
1m
10m
100m
1
10
PW - Pulse Width - s
5
Data Sheet D13334EJ1V0DS00
2SK3111
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
V
DD =100V
V
R
V
I
DD =100V
=25Ω
GS =20V→0V
AS ≤20A
V
GS =20V→0V
G
G
100
80
60
40
20
0
R =25Ω
Starting Tch =25˚C
I
AS =20A
EAS
=
10
100
mJ
1
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - ˚C
6
Data Sheet D13334EJ1V0DS00
2SK3111
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0
4.8 MAX.
1.3±0.2
(10)
4
φ
3.6±0.2
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
2.8±0.2
1.Gate
2.Drain
2.54 TYP.
3.Source
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
(10)
4
Drain
1.3±0.2
Body
Diode
Gate
Gate
Protection
Diode
1.4±0.2
0.7±0.2
Source
0.5±0.2
2.54 TYP.
2.54 TYP.
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D13334EJ1V0DS00
2SK3111
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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