3SK223-UIA-A [NEC]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4;
| 型号： | 3SK223-UIA-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4 |
| 文件： | 总6页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
•
The Characteristic of Cross-Modulation is good.
(Unit: mm)
CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB
+0.2
2.8
–0.3
•
Low Noise Figure:
NF1 = 2.2 dB TYP. (f = 470 MHz)
+0.2
–0.3
1.5
NF2 = 0.9 dB TYP. (f = 55 MHz)
GPS = 20 dB TYP. (f = 470 MHz)
•
•
•
•
•
High Power Gain:
Enhancement Type.
Suitable for use as RF amplifier in CATV tuner.
Automatically Mounting:
Small Package:
Embossed Type Taping
4 Pins Mini Mold
5°
5°
5°
5°
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
VDSX
VG1S
VG2S
VG1D
VG2D
ID
18
±8 (±10)*1
±8 (±10)*1
18
V
V
V
V
18
V
25
mA
mW
°C
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
*1 RL ≥ 10 kΩ
PD
200
1. Source
2. Drain
Tch
125
Tstg
–55 to +125
3. Gate 2
4. Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
1989
©
3SK223
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
BVDSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
Drain to Source Breakdown
Voltage
VG1S = VG2S = –2 V, ID = 10 µA
Drain Current
IDSX
0.01
0
8.0
mA
V
VDS = 5 V, VG2S = 4 V, VG1S = 0.75 V
Gate1 to Source Cutoff
Voltage
VG1S(off)
+1.0
VDS = 6 V, VG2S = 3 V, ID = 10 µA
Gate2 to Source Cutoff
Voltage
VG2S(off)
0
+1.0
V
VDS = 6 V, VG1S = 3 V, ID = 10 µA
Gate1 Reverse Current
Gate2 Reverse Current
IG1SS
IG2SS
|yfs|
±20
±20
nA
nA
VDS = 0, VG2S = 0, VG1S = ±8 V
VDS = 0, VG1S = 0, VG2S = ±8 V
Forward Transfer
Admittance
15
19.5
mS
VDS = 5 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
Input Capacitance
Output Capacitance
Ciss
2.5
0.9
3.0
1.2
3.5
1.5
pF
pF
pF
CDSS
Crss
Reverse Transfer
Capacitance
0.015
0.03
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 470 MHz
Power Gain
GPS
17.0
20.0
2.2
dB
dB
dB
Noise Figure 1
Noise Figure 2
NF1
NF2
3.2
2.4
0.9
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 55 MHz
IDSX Classification
Class
U90/UIO*
U90
0.01 to 3.0
U91/UIA*
U91
Marking
IDSX (mA)
1.0 to 8.0
* Old Specification/New Specification
2
3SK223
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
100
VG2S = 3 V
25
20
15
10
5
V
G1S = 1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
0
25
50
75
100
125
3
6
9
12
15
0
T
A
– Ambient Temperature – °C
VDS – Drain to Source Voltage – V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G2S = 3.5 V
VDS = 6 V
f = 1 kHz
25
20
15
10
5
40
32
24
16
8
VDS = 6 V
3.0 V
2.5 V
2.0 V
VG2S = 3.5 V
2.5 V
2.0 V
3.0 V
1.5 V
1.5 V
1.0 V
1.0 V
2.0
G1S – Gate1 to Source Voltage – V
0.5 V
0.5
1.0
1.5
2.5
0.5
1.0
1.5
2.0
2.5
0
0
V
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
4.0
3.0
2.0
1.0
0
V
DS = 6 V
I
D
= 10 mA
40
32
24
16
8
(at VDS = 6 V
f = 1 kHz
V
G2S = 3 V)
f = 1 MHz
V
G2S = 3.5 V
3.0 V
2.0 V
2.5 V
1.5 V
8
1.0 V
4
12
16
20
0
I – Drain Current – mA
D
–1.0
0
1.0
2.0
3.0
4.0
V
G2S – Gate2 to Source Voltage – V
3
3SK223
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
2.5
2.0
1.5
1.0
0.5
0
10
I
D
= 10 mA
f = 470 MHz
G
PS
(at VDS = 6 V
ID = 10 mA
20
10
V
G2S = 3 V
)
(at VDS = 6 V
f = 1 MHz
V
G2S = 3 V)
5
0
–10
–20
NF
0
–1.0
0
1.0
2.0
3.0
4.0
–2.0
0
2.0
4.0
6.0
8.0
V
G2S – Gate2 to Source Voltage – V
V
G2S – Gate2 to Source Voltage – V
4
3SK223
GPS AND NF TEST CIRCUIT AT f = 470 MHz
VG2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
40 pF OUTPUT
L2
INPUT 40 pF
50 Ω
50 Ω
L1
1 000 pF
15 pF
15 pF
1 000 pF
22 k
Ω
L3
1 000 pF
1 000 pF
V
G1S
VDS
φ
φ
φ
1.2 mm U.E.W 5 mm 1T
L1
L2
L3
:
φ
:
1.2 mm U.E.W 5 mm 1T
µ
: REC 2.2
H
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
Ferrite
Beads
2.2 kΩ
1 500 pF
1 500 pF
1 000 pF
OUTPUT
27 pF
27 pF
INPUT
47 kΩ
3.3 kΩ
47 k
Ω
3.3 kΩ
50 Ω
50 Ω
1 000 pF
VG1S
5
3SK223
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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