BA1L3Z-A
更新时间：2024-09-18 13:01:47
品牌：NEC
描述：Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
概述
规格参数
数据手册BA1L3Z-A 概述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon 小信号双极晶体管
BA1L3Z-A 规格参数
| 生命周期： | Transferred | 包装说明： | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.55 |
| 其他特性： | BUILT-IN BIAS RESISTOR | 最大集电极电流 (IC)： | 0.1 A |
| 集电极-发射极最大电压： | 50 V | 配置： | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE)： | 100 | JESD-30 代码： | R-PSIP-T3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | NPN | 认证状态： | Not Qualified |
| 表面贴装： | NO | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| 最大关闭时间（toff）： | 6000 ns | 最大开启时间（吨）： | 200 ns |
| Base Number Matches： | 1 |
BA1L3Z-A 数据手册
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FEATURES
PACKAGE DRAWING (UNIT: mm)
•
On-chip bias resistor
(Rꢀ = 4.7 kΩ, Rꢁ = 4.7 kΩ)
•
Complementary transistor with BN1L3M
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
PT
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
60
50
V
10
V
100
mA
mA
mW
°C
°C
200
250
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 50 V, IE = 0
MIN.
TYP.
MAX.
100
80
Unit
nA
−
hFE1 **
hFE2 **
VCE(sat) **
VIL **
VIH **
R1
VCE = 5.0 V, IC = 5.0 mA
VCE = 5.0 V, IC = 50 mA
IC = 5.0 mA, IB = 0.25 mA
VCE = 5.0 V, IC = 100 µA
VCE = 0.2 V, IC = 5.0 mA
20
70
40
140
0.08
1.1
1.5
4.7
1.0
−
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
0.3
0.2
V
V
3.0
3.29
0.9
V
kΩ
−
6.11
1.1
0.5
3.0
5.0
Resistance ratio
R1/R2
ton
VCC = 5 V, RL = 1 kΩ
VI = 5 V, PW = 2 µs
duty cycle≤2 %
µs
µs
µs
Turn-on time
Storage time
tstg
Turn-off time
toff
** PW ≤ 350 µs, duty cycle ≤ 2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16175EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
BA1L3M
TYPICAL CHARACTERISTICS (Ta = 25°C)
2
Data Sheet D16175EJ1V0DS
BA1L3M
3
Data Sheet D16175EJ1V0DS
BA1L3M
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4
BA1L3Z-A 相关器件
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| BA1L4L-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
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| BA1L4Z-P | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
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| BA1L4Z-P | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
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| BA1L4Z-Q | NEC | 暂无描述 | 获取价格 |
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