BB1L3N [NEC]

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching; 复合晶体管，芯片电阻NPN硅外延晶体管中速开关


型号：	BB1L3N
厂家：	NEC
描述：	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching 复合晶体管，芯片电阻NPN硅外延晶体管中速开关晶体开关小信号双极晶体管
文件：	总6页 (文件大小：106K)
中文：	中文翻译
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DATA SHEET

COMPOUND TRANSISTOR

BB1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

The BB1 Series is an N type small signal transistor and enables the reduction of component counts and

downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

appliances and OA equipments such as VCRs and TVs.

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Up to 0.7 A current drive available

On-chip bias resistor

Low power consumption during drive

QUALITY GRADES

•

Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation

to know the specification of quality grade on the devices and its

recommended applications.

Electrode Connection

1. Emitte (E)

2. Collector (C)

3. Base (B)

BB1 SERIES LISTS

R¹(KΩ)

−

R²(KΩ)

Products

BB1A4A

BB1L2Q

BB1A3M

BB1F3P

BB1J3P

BB1L3N

BB1A4M

0.47

1.0

4.7

1.0

2.2

3.3

4.7

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D11739EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

BB1 SERIES

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)^{Note 1}

I^B(DC)

P^T

Ratings

Unit

Collector to base volgate

Colletor to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

0.7

1.0

0.02

250

Total power dissipation

Junction temperature

Storage temperature

°C

T^j

150

−55 to +150

T^stg

Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %

BB1A4A

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

h^FE1^{Note 2}

h^FE2^{Note 2}

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

0.27

MAX.

100

Unit

−

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

I^C= 0.5 A, I^B= 5 mA

V^CE= 5.0 V, I^C= 100 µA

300

135

−

DC current gain

h^FE3^{Note 2}

−

DC current gain

Note 2

Collector saturation voltage

Low level input voltage

Input resistance

CE(sat)

V^IL^{Note 2}

R¹

0.4

0.3

−

Ω

kΩ

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1L2Q

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.5 A

V^CE= 5.0 V, I^C= 100 µA

150

300

135

400

700

600

0.2

−

DC current gain

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

Ω

329

470

4.7

611

6.11

kΩ

E-to-B resistance

R²

3.29

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11739EJ2V0DS

BB1 SERIES

BB1A3M

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.5 A

V^CE= 5.0 V, I^C= 100 µA

−

DC current gain

100

135

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

0.4

0.3

1.3

kΩ

0.7

1.0

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1F3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.3 A

V^CE= 5.0 V, I^C= 100 µA

300

135

−

DC current gain

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

2.86

kΩ

1.54

2.2

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BP1J3P

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.2 A

V^CE= 5.0 V, I^C= 100 µA

300

135

600

700

600

0.14

−

DC current gain

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

4.29

kΩ

2.31

3.3

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11739EJ2V0DS

BB1 SERIES

BB1L3N

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.2 A

V^CE= 5.0 V, I^C= 100 µA

300

135

−

DC current gain

−

DC current gain

Low level output voltage

Low level input voltage

Input resistance

0.3

6.11

kΩ

3.29

4.7

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1A4M

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

MAX.

100

Unit

−

h^FE1^{Note 2}

h^FE2^{Note 2}

h^FE3^{Note 2}

V^OL^{Note 2}

V^IL^{Note 2}

R¹

V^CE= 2.0 V, I^C= 0.1 A

V^CE= 2.0 V, I^C= 0.5 A

V^CE= 2.0 V, I^C= 0.7 A

V^IN= 5.0 V, I^C= 0.2 A

V^CE= 5.0 V, I^C= 100 µA

300

135

−

DC current gain

−

DC current gain

Collector saturation voltage

Low level input voltage

Input resistance

0.3

kΩ

E-to-B resistance

R²

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11739EJ2V0DS

BB1 SERIES

TYPICAL CHARACTERISTICS (Ta = 25°C)

Data Sheet D11739EJ2V0DS

BB1 SERIES

•

The information in this document is current as of July, 2001. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

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M8E 00. 4

BB1L3N [NEC]

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