BN1L4Z [NEC]

COMPOUND TRANSISTOR; 复合晶体管
BN1L4Z
型号: BN1L4Z
厂家: NEC    NEC
描述:

COMPOUND TRANSISTOR
复合晶体管

晶体 小信号双极晶体管 开关
文件: 总4页 (文件大小:87K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
COMPOUND TRANSISTOR  
BN1L4Z  
on-chip resistor NPN silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
On-chip bias resistor  
(R1 = 47 k)  
Complementary transistor with BA1L4Z  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
PT  
Ratings  
60  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
50  
V
5  
V
100  
200  
250  
mA  
mA  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50 %  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
VCE = 5.0 V, IC = 5.0 mA  
VCE = 5.0 V, IC = 50 mA  
IC = 5.0 mA, IB = 0.25 mA  
VCE = 5.0 V, IC = 100 µA  
VCE = 0.2 V, IC = 5.0 mA  
hFE1 **  
hFE2 **  
VCE(sat) **  
VIL **  
VIH **  
R1  
135  
100  
230  
190  
600  
DC current gain  
0.07  
0.58  
1.8  
47  
0.2  
0.5  
Collector saturation voltage  
Low level input voltage  
High level input voltage  
Input resistance  
V
V
4.0  
V
kΩ  
µs  
µs  
µs  
32.9  
61.1  
0.2  
5.0  
6.0  
VCC = 5.0 V, RL = 1.0 kΩ  
VI = 5.0 V, PW = 2.0 µs  
duty cycle2 %  
Turn-on time  
ton  
Storage time  
tstg  
Turn-off time  
toff  
** Pulse test PW 350 µs, duty cycle 2 %  
hFE CLASSIFICATION  
Marking  
hFE1  
Q
P
K
135 to 270  
200 to 400  
300 to 600  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13592EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©
BN1L4Z  
TYPICAL CHARACTERISTICS (Ta = 25°C)  
2
Data Sheet D13592EJ1V0DS  
BN1L4Z  
3
Data Sheet D13592EJ1V0DS  
BN1L4Z  
The information in this document is current as of July, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  

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