CE1N2R [NEC]
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching; 片上电阻NPN硅外延晶体管中速开关
| 型号： | CE1N2R |
| 厂家： | 
NEC |
| 描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
COMPOUND TRANSISTOR
CE1N2R
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
The CE1N2R is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
•
•
•
On-chip zener diode for surge voltage absorption
On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ
Low power consumption during driving:
VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A
On-chip dumper diode for reverse cable
•
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT
Ratings
60 10
60 10
15
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
V
V
2.0
A
3.0
A
0.03
A
Total power dissipation
Junction temperature
Storage temperature
1.0
W
°C
°C
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10846EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
CE1N2R
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Colletor to emitter voltage
Collector cutoff current
DC current gain
Symbol
VCEO(SUS)
ICBO
Conditions
IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH
VCB = 40 V, IE = 0
MIN.
50
TYP.
60
MAX.
100
Unit
V
nA
−
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
VCE = 5.0 V, IC = 0.2 A
VCE = 5.0 V, IC = 1.0 A
VCE = 5.0 V, IC = 2.0 A
VI = 5.0 V, IC = 0.5 A
700
1000
500
1200
1700
1300
0.12
0.43
680
−
DC current gain
3000
−
DC current gain
Low level output voltage
Low level input voltage
Input resistance
0.3
0.4
V
VCE = 12 V, IC = 100 µA
V
Ω
476
7.0
884
13.0
kΩ
µs
µs
µs
E-to-B resistance
Turn-on time
R2
10.0
0.4
ton
IC = 1.0 A
IBI = −IB2 = 10 mA
VCC = 20 V, RL = 20 Ω
Storage time
tstg
1.4
Fall time
tf
0.5
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC sales representative.
2
Data Sheet D10846EJ2V0DS
CE1N2R
[MEMO]
3
Data Sheet D10846EJ2V0DS
CE1N2R
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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redundancy, fire-containment, and anti-failure features.
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M8E 00. 4
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