概述
规格参数
数据手册GA4L3M 概述
RESISTOR BUILT-IN TYPE NPN TRANSISTOR 电阻内置型NPN晶体管 小信号双极晶体管
GA4L3M 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 零件包装代码： | SC-70 | 包装说明： | SMALL OUTLINE, R-PDSO-G3 |
| 针数： | 3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.21.00.95 |
| 风险等级： | 5.26 | 其他特性： | BUILT-IN BIAS RESISTOR |
| 最大集电极电流 (IC)： | 0.1 A | 集电极-发射极最大电压： | 50 V |
| 配置： | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE)： | 100 |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 3 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | NPN | 认证状态： | Not Qualified |
| 表面贴装： | YES | 端子面层： | TIN LEAD |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
GA4L3M 数据手册
通过下载GA4L3M数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载DATA SHEET
SILICON TRANSISTOR
GA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
#
PACKAGE DRAWING (Unit: mm)
• Compact package
• Resistors built-in type
• Complementary to GN4xxx
+0.1
−0
+0.1
0.3
0.15
−0.05
Marking
3
0 to 0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-70
2
1
GA4xxx
0.65
0.65
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
+0.1
0.3
0.3
−0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) Note
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IC(pulse)
PT
60
50
5
0.1
0.2
V
V
V
A
A
W
°C
°C
0.9 ± ±0.1
2.0 ± ±0.2
#
#
EQUIVALENT CIRCUIT
PIN CONNECTION
1: Emitter
3
2: Base
0.2
150
–55 to +150
3: Collector
2
Tj
Tstg
Storage Temperature
R1
R2
1
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
PART NUMBER
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
MARK
AA1
AB1
AC1
AD1
AE1
AF1
AG1
AH1
AJ1
R1
R2
UNIT
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
PART NUMBER
GA4L4L
MARK
AK1
AL1
R1
R2
UNIT
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
10.0
22.0
47.0
4.7
10.0
22.0
47.0
4.7
47.0
10.0
22.0
47.0
2.2
22.0
GA4A4Z
GA4F4Z
AM1
AN1
AP1
AQ1
AR1
AS1
AT1
GA4L4Z
4.7
10.0
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
2.2
10.0
47.0
4.7
GA4L3Z
4.7
2.2
GA4A3Q
GA4A4P
GA4F4N
1.0
10.0
47.0
47.0
2.2
10.0
22.0
10.0
47.0
10.0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
The mark # shows major revised points.
Document No. D16494EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
±
GA4xxx
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
100
UNIT
nA
-
Collector Cut-off Current
ICBO
VCB = 50 V, IE = 0
DC Current Gain
hFE1
hFE2
VCE(sat)
VIL
VCE = 5.0 V, IC = 5.0 mA
VCE = 5.0 V, IC = 50 mA
IC = 5.0 mA, IB = 0.25 mA
VCE = 5.0 V, IC = 100 µA
VCE = 0.2 V, IC = 5.0 mA
Note1
Note1
-
Collector Saturation Voltage
Low-level Input Voltage
High-level Input Voltage
Input Resistor
0.2
V
Note2
Note2
Note3
Note3
V
VIH
V
R1
kΩ
kΩ
Emitter to Base Resistor
R2
Note 1
PART NUMBER
hFE1
hFE2
UNIT
MIN.
35
60
85
20
35
135
35
85
85
TYP.
MAX.
100
195
340
80
100
600
100
340
340
195
600
600
600
50
MIN.
80
90
95
80
80
100
80
95
95
TYP.
MAX.
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
90
135
135
135
8
35
85
100
100
100
50
80
95
100
340
80
20
35
80
80
100
Note 2
PART NUMBER
VIL
VIH
UNIT
MIN.
TYP.
MAX.
0.8
0.8
0.8
0.8
0.6
0.5
0.5
0.5
0.6
0.9
0.5
0.5
0.5
0.8
0.5
0.5
0.9
2.0
MIN.
3.0
4.0
5.0
3.0
3.0
1.2
2.0
3.0
3.0
6.0
2.0
3.0
4.0
3.0
2.0
2.0
6.0
8.0
TYP.
MAX.
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2
Data Sheet D16494EJ2V0DS
±
GA4xxx
Note 3
PART NUMBER
R1
R2
UNIT
MIN.
7.00
15.40
32.90
3.29
3.29
3.29
0.70
7.00
15.40
32.90
7.00
15.40
32.90
1.54
1.54
1.54
7.00
32.90
TYP.
10.00
22.00
47.00
4.70
4.70
4.70
1.00
10.00
22.00
47.00
10.00
22.00
47.00
2.20
2.20
2.20
10.00
47.00
MAX.
13.00
28.60
61.10
6.11
6.11
6.11
1.30
13.00
28.60
61.10
13.00
28.60
61.10
2.86
2.86
2.86
13.00
61.10
MIN.
7.00
15.40
32.90
3.29
TYP.
10.00
22.00
47.00
4.70
MAX.
13.00
28.60
61.10
6.11
GA4A4M
GA4F4M
GA4L4M
GA4L3M
GA4L3N
GA4L3Z
GA4A3Q
GA4A4P
GA4F4N
GA4L4L
GA4A4Z
GA4F4Z
GA4L4Z
GA4F3M
GA4F3P
GA4F3R
GA4A4L
GA4L4K
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
7.00
10.00
13.00
7.00
32.90
32.90
15.40
10.00
47.00
47.00
22.00
13.00
61.10
61.10
28.60
1.54
7.00
32.90
3.29
7.00
2.20
10.00
47.00
4.70
2.86
13.00
61.10
6.11
10.00
13.00
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
200
TA - Ambient Temperature - °C
3
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4A4M]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
VIN = 5.0 V
15.0 V
I
B
= 220
µ
µ
µ
µ
µ
µ
µ
A
A
A
A
A
40
30
200
180
160
140
120
10.0 V
20
10
0
A
100
A
A
80
µ
0
20
40
60
80
100
0
2
4
6
8
10
IC - Collector Current - mA
V
CE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
1
−25°C
0.1
TA = 75°C
25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
100
10
1
25°C
−25°C
TA = −25°C
25°C
75°C
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
20
16
12
8
4
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
4
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F4M]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
µ
IB = 290 A
240
190
140
90
µ
A
40
30
µ
µ
A
A
15.0 V
VIN = 5.0 V
10.0 V
20
10
0
µ
A
40 A
µ
0
2
4
6
8
10
0
20
40
60
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
−25°C
0.1
100
10
TA = 75°C
25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000
100
10
1
TA = 75°C
µ
−25°C
25°C
100
10
1
TA = −25°C
25°C
75°C
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
50
40
30
20
10
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
5
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L4M]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
VIN = 5.0 V
10.0 V
µ
IB = 220 A
170
120
70
µ
A
40
30
µ
A
20
10
0
15.0 V
µ
µ
A
A
20
0
2
4
6
8
10
0
20
40
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
10
IC = 10・IB
VCE = 5.0 V
1
0.1
TA = 75°C
25°C
100
10
TA = 75°C
25°C
−25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
100
10
1
TA = −25°C
25°C
−25°C
75°C
25°C
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
80
60
40
20
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
6
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L3M]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 460 A
µ
410
µ
µ
µ
µ
A
A
A
A
40
30
VIN = 5.0 V
10.0 V
360
310
260
20
10
0
15.0 V
210
160
µ
µ
A
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
1
−25°C
0.1
TA = 75°C
25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 0.2 V
VCE = 5.0 V
TA = 75°C
TA = −25°C
25°C
µ
100
10
1
75°C
25°C
−25°C
0.1
1
10
100
0.6
0.8
1
1.2
1.4
1.6
IC
- Collector Current - mA
VIN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
10
8
6
4
2
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
7
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L3N]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
µ
IB = 380 A
330
280
µ
µ
A
A
40
30
VIN = 5.0 V
10.0 V
230
180
130
80
µ
µ
µ
µ
A
A
A
A
20
10
0
15.0 V
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC - Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
1
−25°C
0.1
TA = 75°C
25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000
100
10
1
VCE = 5.0 V
TA = 75°C
µ
TA = −25°C
25°C
100
10
1
25°C
75°C
−25°C
0.1
1
10
100
0.4
0.6
0.8
1
1.2
IC
- Collector Current - mA
V
IN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
20
16
12
8
R2
R1
4
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
8
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L3Z]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
µ
IB = 250 A
40
30
200
150
100
50
µ
µ
µ
A
A
A
VIN = 5.0 V
10.0 V
20
10
0
15.0 V
µ
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC - Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
0.1
−25°C
TA = 75°C
25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
TA = −25°C
25°C
100
10
1
75°C
25°C
−25°C
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1
IC
- Collector Current - mA
IN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
10
8
6
4
2
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
9
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4A3Q]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 280 A
µ
40
30
230
180
µ
µ
A
A
VIN = 5.0 V
20
10
0
130
µ
A
80
4
µ
A
10.0 V 15.0 V
0
2
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−25°C
−25°C
0.01
1
10
100
1
10
- Collector Current - mA
100
IC
- Collector Current - mA
IC
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
−25°C
TA = 75°C
25°C
100
10
1
−25°C
25°C
0.1
0.2
0.4
0.6
0.8
1
1.2
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
12
10
8
R2
6
4
2
R1
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
10
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4A4P]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
I
B
= 180
160
µ
µ
µ
A
A
A
40
30
VIN = 5.0 V
10.0 V
140
120
100
µ
µ
A
A
20
10
0
80
60
µ
µ
A
A
15.0 V
40
20
µ
µ
A
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
100
10
1
TA = 75°C
25°C
0.1
TA = 75°C
−25°C
25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000
100
10
1
VCE = 5.0 V
TA = 75°C
µ
TA = −25°C
25°C
100
10
1
75°C
−25°C
25°C
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
IC
- Collector Current - mA
VIN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
60
50
40
30
20
10
0
R2
R1
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
11
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F4N]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
I
B
= 180
160
µ
µ
A
A
VIN = 5.0 V
10.0 V
40
30
140
120
100
80
µ
µ
µ
µ
A
A
A
A
20
10
0
15.0 V
60
40
20
µ
µ
µ
A
A
A
0
2
4
6
8
10
0
20
40
60
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
100
10
1
TA = 75°C
25°C
TA = 75°C
0.1
25°C
−25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000
100
10
1
TA = 75°C
µ
TA = 75°C
25°C
100
10
1
−25°C
−25°C
25°C
VCE = 5.0 V
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
60
50
40
30
20
10
0
R2
R1
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
12
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L4L]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
10.0 V
I
B
= 200
180
µ
A
A
40
30
µ
µ
160
140
120
100
A
A
A
A
µ
µ
µ
VIN = 5.0 V
20
10
0
80
60
40
µ
µ
µ
A
A
A
15.0 V
0
2
4
6
8
10
0
20
40
V
CE - Collector to Emitter Voltage - V
IC - Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
100
10
1
TA = −25°C
25°C
−25°C
75°C
25°C
0.1
1
10
100
0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
IC
- Collector Current - mA
VIN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
60
40
20
0
R1
R2
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
13
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4A4Z]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
µ
IB = 200 A
180
160
140
120
100
µ
µ
µ
µ
µ
A
A
A
A
A
40
30
10.0 V
VIN = 5.0 V
80
60
µ
µ
A
A
20
10
0
15.0 V
40
20
µ
µ
A
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
0.1
TA = 75°C
25°C
−25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
TA = −25°C
25°C
−25°C
100
10
1
25°C
75°C
0.1
0.2
0.4
0.6
IN - Input Voltage - V
0.8
1
1
10
100
V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
20
16
12
8
4
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
14
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F4Z]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 180 A
µ
160
140
120
100
80
µ
µ
µ
µ
µ
µ
A
A
A
A
A
A
VIN = 5.0 V
10.0 V
40
30
15.0 V
20
10
0
60
40
20
µ
µ
A
A
0
2
4
6
8
10
0
20
40
60
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
25°C
0.1
100
10
TA = 75°C
25°C
−25°C
±−25°C
0.01
1
10
100
1
10
- Collector Current - mA
100
IC
- Collector Current - mA
IC
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
µ
TA = −25°C
25°C
TA = 75°C
25°C
100
10
1
75°C
−25°C
0.1
1
10
100
0.2
0.4
0.6
0.8
1
IC
- Collector Current - mA
V
IN - Input Voltage - V
RESISTER vs. AMBIENT TEMPERATURE
40
30
20
10
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
15
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L4Z]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 200 A
µ
VIN = 5.0 V
10.0 V
180
160
140
120
µ
µ
µ
A
A
A
A
40
30
15.0 V
µ
100
80
60
40
20
µ
µ
µ
µ
µ
A
A
A
A
A
20
10
0
0
2
4
6
8
10
0
20
40
V
CE - Collector to Emitter Voltage - V
I - Collector Current - mA
C
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
100
10
1
TA = 75°C
25°C
0.1
TA = 75°C
−25°C
25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = −25°C
25°C
µ
100
10
1
TA = 75°C
25°C
75°C
−25°C
VCE = 0.2 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
100
80
60
40
20
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
16
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F3M]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 400 A
µ
40
30
VIN = 5.0 V
10.0 V
300
200
µ
µ
A
A
20
10
0
15.0 V
100
µ
A
6
0
2
4
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
TA = 75°C
25°C
25°C
100
10
1
−25°C
0.1
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
VCE = 0.2 V
TA = 75°C
25°C
µ
TA = 75°C
100
10
1
25°C
−25°C
−25°C
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
5
4
3
2
1
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
17
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F3P]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
µ
IB = 250 A
40
30
200
150
µ
µ
A
A
VIN = 5.0 V
10.0 V
20
10
0
100
50
µ
µ
A
A
15.0 V
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
VCE = 5.0 V
IC = 10・IB
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
µ
TA = 75°C
25°C
TA = 75°C
100
10
1
25°C
−25°C
−25°C
0.1
0
0.2
0.4
0.6
0.8
1
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
14
12
10
8
R2
R1
6
4
2
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
18
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4F3R]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 250 A
µ
200
150
100
µ
µ
µ
A
A
A
40
30
VIN = 5.0 V
10.0 V
15.0 V
20
10
0
50
µ
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−
25°C
−25°C
0.01
1
10
100
1
10
- Collector Current - mA
100
I - Collector Current - mA
C
IC
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
µ
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
−25°C
−25°C
0.1
0
0.2
0.4
0.6
0.8
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
60
50
40
30
20
10
0
R2
R1
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
19
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4A4L]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
IB = 300 A
µ
VIN = 5.0 V
10.0 V
250
200
µ
µ
A
A
40
30
15.0 V
150
µ
A
20
10
0
100
50
µ
µ
A
A
0
2
4
6
8
10
0
20
40
60
80
100
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−25°C
−25°C
0.01
1
10
- Collector Current - mA
100
1
10
100
IC
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
100
10
1
1000
VCE = 5.0 V
TA = 75°C
µ
100
10
1
TA = 75°C
25°C
25°C
−25°C
−25°C
0.1
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
14
12
10
8
R1
R2
6
4
2
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
20
Data Sheet D16494EJ2V0DS
±
GA4xxx
[GA4L4K]
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
50
I
B
= 250
µ
A
40
30
200
150
100
µ
µ
µ
A
A
A
VIN = 5.0 V
10.0 V
15.0 V
20
10
0
50
µ
A
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
V
CE - Collector to Emitter Voltage - V
IC
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
1
IC = 10・IB
VCE = 5.0 V
TA = 75°C
25°C
100
10
1
TA = 75°C
25°C
0.1
−25°C
−25°C
0.01
1
10
100
1
10
100
IC
- Collector Current - mA
IC
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE = 0.2 V
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000
100
10
1
VCE = 5.0 V
TA = 75°C
µ
100
10
1
TA = 75°C
25°C
−25°C
−25°C
25°C
0.1
1.8
2.2
2.6
3
3.4
3.8
4.2
4.6
1
10
100
V
IN - Input Voltage - V
IC
- Collector Current - mA
RESISTER vs. AMBIENT TEMPERATURE
60
50
40
30
20
10
0
R1
R2
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
21
Data Sheet D16494EJ2V0DS
±
GA4xxx
•
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
GA4L3M 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| GA4L3M-A | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN | 获取价格 |
|
| GA4L3M-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN | 获取价格 |
|
| GA4L3N | NEC | RESISTOR BUILT-IN TYPE NPN TRANSISTOR | 获取价格 |
|
| GA4L3N | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN | 获取价格 |
|
| GA4L3N-A | NEC | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN | 获取价格 |
|
| GA4L3N-A | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN | 获取价格 |
|
| GA4L3N-T1-AT | RENESAS | PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70 | 获取价格 |
|
| GA4L3Z | NEC | RESISTOR BUILT-IN TYPE NPN TRANSISTOR | 获取价格 |
|
| GA4L3Z-A | RENESAS | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN | 获取价格 |
|
| GA4L3Z-T1-AT | RENESAS | PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70 | 获取价格 |
|
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