HQ1A4A [NEC]
COMPOUND TRANSISTOR; 复合晶体管型号: | HQ1A4A |
厂家: | NEC |
描述: | COMPOUND TRANSISTOR |
文件: | 总6页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
COMPOUND TRANSISTOR
HQ1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
Up to 2A high current drives such as ICs, motors, and solenoids
available
•
•
On-chip bias resistor
Low power consumption during drive
HQ1 SERIES LISTS
Products
HQ1L2N
HQ1A3M
HQ1F3M
HQ1F3P
HQ1L2Q
HQ1F2Q
HQ1A4A
Marking
DP
R1 (KΩ)
0.47
1.0
R2 (KΩ)
1.0
DQ
1.0
DR
2.2
2.2
DS
2.2
10
DT
0.47
0.22
−
4.7
DU
2.2
DX
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse) *
IB(DC)
PT **
Tj
Ratings
−20
Unit
V
−20
V
−10
V
−2.0
A
−3.0
A
−0.04
2.0
A
Total power dissipation
Junction temperature
Storage temperature
W
°C
°C
150
Tstg
−55 to +150
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm2 ceramic board is used
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16183EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
HQ1 SERIES
HQ1L2N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
50
150
50
−
DC current gain
−
DC current gain
−0.55
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
0.7
470
1.0
kΩ
E-to-B resistance
R2
1.3
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.5 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
50
100
50
−
DC current gain
−
DC current gain
−0.4
−0.3
1.3
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
0.7
0.7
1.0
1.0
E-to-B resistance
R2
1.3
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1F3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
80
150
50
−
DC current gain
−
DC current gain
−0.3
−0.3
2.86
2.86
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
1.54
1.54
2.2
2.2
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
2
Data Sheet D16183EJ1V0DS
HQ1 SERIES
HQ1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
200
150
50
−
DC current gain
−
DC current gain
−0.3
−0.3
2.86
13
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
1.54
7
2.2
10
E-to-B resistance
R2
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
150
150
50
−
DC current gain
−
DC current gain
−0.55
−0.3
611
Low level output voltage
Low level input voltage
Input resistance
V
V
Ω
329
470
4.7
kΩ
E-to-B resistance
R2
3.29
6.11
** PW ≤ 350 µs, duty cycle ≤ 2 %
HQ1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
VIN = −5.0 V, IC = −0.7 A
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VOL **
VIL **
R1
80
150
50
−
DC current gain
−
DC current gain
−0.55
−0.3
286
Low level output voltage
Low level input voltage
Input resistance
V
V
kΩ
kΩ
154
220
2.2
E-to-B resistance
R2
1.54
2.86
** PW ≤ 350 µs, duty cycle ≤ 2 %
3
Data Sheet D16183EJ1V0DS
HQ1 SERIES
HQ1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −20 V, IE = 0
MIN.
TYP.
MAX.
Unit
nA
−
−100
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −2.0 A
IC = −1.0 A, IB = −20 mA
VCE = −5.0 V, IC = −100 µA
hFE1 **
hFE2 **
hFE3 **
VCE(sat) **
VIL **
R1
200
150
50
−
DC current gain
−
DC current gain
−0.35
−0.45
−0.3
−
Collector saturation voltage
Low level input voltage
Input resistance
V
V
−
−
Ω
kΩ
E-to-B resistance
R2
7
10
13
** PW ≤ 350 µs, duty cycle ≤ 2 %
4
Data Sheet D16183EJ1V0DS
HQ1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°C)
5
Data Sheet D16183EJ1V0DS
HQ1 SERIES
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4
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