NDL7563P
更新时间：2024-09-18 02:25:53
品牌：NEC
描述：InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
概述
数据手册NDL7563P 概述
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION 的InGaAsP应变MQW DC- PBH脉冲激光二极管模块1550nm的OTDR应用
NDL7563P 数据手册
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LASER DIODE
NDL7563P Series
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE
1550nm OTDR APPLICATION
DESCRIPTION
NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well (st-MQW) structure pulsed laser
diode coaxial module with singlemode fiber. It is designed for light source of optical measurement equipment
(OTDR).
FEATURES
High output power
Long wavelength
Pf = 80 mW @IFP = 400 mA*1
x
x
x
x
OC = 1550 nm
Coaxial module without thermoelectric cooler.
Singlemode fiber pigtail
*1 Pulse Conditions: Pulse width (PW) = 10 Ps, Duty = 1 %
PACKAGE DIMENSIONS
in millimeters
NDL7563P
φ 0.9
NDL7563P1
φ 0.9
Optical Fiber
Optical Fiber
SM-9/125
SM-9/125
Length = 1 m
Length = 1 m
φ 7
φ 7
φ
φ 0.45
φ 0.45
φ 6
φ 6
12.7
17.0
PIN CONNECTIONS
PIN CONNECTIONS
P.C.D. = φ2
P.C.D. = φ2
4
4
3
3
1
1
φ
1
2
2
1
2
2
LD
CASE
LD
CASE
The information in this document is subject to change without notice.
Document No. P10475EJ4V0DS00 (4th edition)
Date Published October 1996 N
Printed in Japan
©
1995
NDL7563P Series
ORDERING INFORMATION
Part Number
NDL7563P
Available Connector
Flange Type
no flange
Without Connector
NDL7563PC
NDL7563PD
NDL7563P1
NDL7563P1C
NDL7563P1D
With FC-PC Connector
With SC-PC Connector
Without Connector
flat mount flange
With FC-PC Connector
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 qC)
Parameter
Pulsed Forward Current*1
Reverse Voltage
Symbol
IFP
Ratings
600
Unit
mA
V
VR
2.0
Operating Case Temperature
Storage Temperature
TC
ð20 to +60
ð40 to +85
260
qC
qC
qC
Tstg
Tsld
Lead Soldering Temperature (10 sec)
*1 Pulse Condition: Pulse Width (PW) = 10 Ps, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 qC)
Parameter
Forward Voltage
Symbol
VFP
Conditions
IFP = 400 mA,
MIN.
TYP.
2.5
MAX.
4.0
Unit
V
PW = 10 Ps, Duty = 1 %
Threshold Current
Ith
Pf
45
80
50
mA
Optical Output Power from Fiber
IFP = 400 mA,
60
mW
PW = 10 Ps, Duty = 1 %
RMS Center Wavelength
RMS Spectral Width
OC
V
IFP = 400 mA,
PW = 10 Ps, Duty = 1 %
1530
1550
6.0
1570
10.0
nm
nm
IFP = 400 mA,
PW = 10 Ps, Duty = 1 %
Rise Time
Fall Time
tr
tf
10 - 90 %
90 - 10 %
1.0
1.0
ns
ns
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60qC)
Parameter
Threshold Current
Symbol
Conditions
MIN.
TYP.
MAX.
75
Unit
mA
Ith
Pf
Optical Output Power from Fiber
IFP = 400 mA,
40
mW
PW = 10 Ps, Duty = 1 %
RMS Center Wavelength
OC
'O/'T
V
IFP = 400 mA,
PW = 10 Ps, Duty = 1 %
1520
1585
10
nm
nm/qC
nm
Temperature Dependency of
Center Wavelength
0.35
RMS Spectral Width
IFP = 400 mA,
PW = 10 Ps, Duty = 1 %
2
NDL7563P Series
OPTICAL OUTPUT POWER FROM FIBER vs.
LD PULSE FORWARD CURRENT
LONGITUDINAL MODE (FROM FIBER)
100
80
60
40
20
µ
PW = 10
s
Duty = 1 %
25 ˚C
60 ˚C
0
100
200
300
400
1550
5 nm/div
Pulsed Forward Current IFP (mA)
Wavelength λ (nm)
3
NDL7563P Series
LASER DIODE FAMILY FOR OTDR APPLICATION
Features
1.31 Pm
1.55 Pm
IFP*1
P (mW)
P (mW)
Remarks
(mA)
Part Number
Part Number
Package
MIN./TYP.
MIN./TYP.
I5.6 CAN
NDL7103
290/320
160/175
110/180
70/110
25/50
NDL7153
220/240
100/120
95/145
60/80
1000
400
NDL7113
NDL7163
P
: no flange
4 pin Coaxial Module with SMF
14 pin DIP Module with SMF
NDL7503P/P1
NDL7513P/P1
NDL7514P/P1
NDL7515P/P1
NDL7502P
NDL7553P/P1
NDL7563P/P1
NDL7564P/P1
NDL7565P/P1
NDL7552P
1000
400
P1 : with flange
20/40
400
20/30
8/11
400
with TEC and
Thermistor
125/190
90/110
40/55
100/125
70/80
1000
400
NDL7512P
NDL7562P
NDL7510P
NDL7560P
20/30
400
*1 Pulse conditions: pulse width = 10 Ps, duty = 1 % (modules)
pulse width = 1 Ps, duty = 1 % (I5.6 can)
4
NDL7563P Series
REFERENCE
Document Name
Document No.
LEI-1201
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
C11531E
C10535E
MEI-1202
X10679E
5
NDL7563P Series
[MEMO]
6
NDL7563P Series
[MEMO]
7
NDL7513P Series
CAUTION
Within this module there exists GaAs (Gallium Arsenide) material which is a harmful
substance if ingested. Please do not under any circumstances break the hermetic seal.
NEC Corporation
NEC Building, 7-1, Shiba 5-chome,
SEMICONDUCTOR LASER
Minato-ku, Tokyo 108-01, Japan
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
AVOID EXPOSURE-Invisible
OUTPUT POWER
WAVELENGTH
mW MAX
nm
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
Laser Radiation is emitted from
this aperture
CLASS lllb LASER PRODUCT
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
NDL7563P 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| NDL7563P1 | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | 获取价格 |
|
| NDL7563P1C | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7563P1D | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7563PC | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7563PD | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7564P | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7564P1 | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION | 获取价格 |
|
| NDL7564P1C | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7564P1D | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
| NDL7564PC | NEC | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION | 获取价格 |
|
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