NE25139U71 [NEC]

GENERAL PURPOSE DUAL-GATE GaAS MESFET; 通用双栅砷化镓MESFET


型号：	NE25139U71
厂家：	NEC
描述：	GENERAL PURPOSE DUAL-GATE GaAS MESFET 通用双栅砷化镓MESFET 晶体晶体管光电二极管栅放大器
文件：	总7页 (文件大小：57K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GENERAL PURPOSE

DUAL-GATE GaAS MESFET

NE25139

FEATURES

POWER GAIN AND NOISE FIGURE vs.

DRAIN TO SOURCE VOLTAGE

•

SUITABLE FOR USE AS RF AMPLIFIER IN

UHF TUNER

GPS

•

LOW CRSS: 0.02 pF (TYP)

HIGH GPS: 20 dB (TYP) AT 900 MHz

LOW NF: 1.1 dB TYP AT 900 MHz

LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

ION IMPLANTATION

VG2S = 1 V

VG2S = 0.5 V

VG2S = 2 V

ID = 10 mA

f = 900 MHz

AVAILABLE IN TAPE & REEL OR BULK

DESCRIPTION

Drain to Source Voltage, VDS (V)

The NE251 is a dual gate GaAs FET designed to provide

flexibility in its application as a mixer, AGC amplifier, or low

noise amplifier. As an example, by shorting the second gate

tothesource, highergaincanberealizedthanwithsinglegate

MESFETs. This device is available in a mini-mold (surface

mount) package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE25139

PACKAGE OUTLINE

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 900 MHz

1.1

2.5

GPS

Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 900 MHz

BVDSX

Drain to Source Breakdown Voltage at VG1S = -4 V,

VG2S = 0, ID = 10 µA

IDSS

Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V

VG1S (OFF)

Gate 1 to Source Cutoff Voltage at VDS = 5 V,

VG2S = 0 V, ID = 100 µA

-3.5

VG2S (OFF)

Gate 2 to Source Cutoff Voltage at VDS = 5 V,

VG1S = 0 V, ID = 100 µA

IG1SS

IG2SS

|YFS|

Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0

Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0

µA

Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,

ID = 10 mA, f = 1.0 kHz

1.0

1.5

CISS

Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,

f = 1 MHz

0.5

CRSS

Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,

ID = 10 mA, f = 1 MHz

0.02

0.03

California Eastern Laboratories

NE25139

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

TYPICAL NOISE PARAMETERS (TA = 25°C)

(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)

SYMBOLS

VDS

PARAMETERS

UNITS

RATINGS

FREQ.

(GHz)

0.5

NFOPT

(dB)

ΓOPT

Drain to Source Voltage

Gate 1 to Source Voltage

Gate 2 to Source Voltage

Drain Current

(dB)

MAG

ANG

Rn/50

1.9

0.9

1.2

1.5

1.9

2.5

3.3

18.5

16.0

14.6

12.5

11.0

9.5

0.9

VG1S

VG2S

-4.5

0.9

0.82

0.71

0.55

0.34

0.25

1.2

-4.5

1.5

0.9

°C

IDSS

2.0

0.67

0.5

Total Power Dissipation

Channel Temperature

200

3.0

116

154

4.0

0.4

TCH

125

TSTG

Storage Temperature

°C

-55 to +125

Note:

1. Operation in excess of anyone of these parameters may result

in permanent damage.

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

TOTAL POWER DISSIPATION VS.

DRAIN CURRENT vs.

GATE 1 TO SOURCE VOLTAGE

AMBIENT TEMPERATURE

250

VDS = 5V

200

FREE AIR

VG2S = 1.0V

150

100

0.5 V

0 V

-0.5 V

100

125

-2.0

-1.0

+1.0

Ambient Temperature, TA (°C)

Gate 1 to Source Voltage, VG1S (V)

FORWARD TRANSFER ADMITTANCE vs.

GATE 1 TO SOURCE VOLTAGE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

DS = 5 V

f = 1 kHz

DS = 5V

f = 1kHz

G2S = 1.0 V

VG2S = 1.0

0.5 V

0 V

-0.5 V

G2S = 0.5 V

-2.0

-1.0

+1.0

Drain Current, ID (mA)

Gate 1 to Source Voltage, VG1S (V)

NE25139

TYPICAL PERFORMANCE CURVES ^(TA = 25°C)

INPUT CAPACITANCE vs.

GATE 2 TO SOURCE VOLTAGE

2.0

POWER GAIN AND NOISE FIGURE vs.

GATE 2 TO SOURCE VOLTAGE

DS = 5 V

VDS = 5 V

f = 1kHz

VG2S = 1 V

ID = 10 mA

GPS

f = 900 MHz

G2S = 1 V at ID = 10 mA

-15

1.0

G2S = 1 V at ID = 5 mA

-30

-45

-1.0

+1.0

-3.0

-2.0

-1.0

+1.0

+2.0

Gate 2 to Source Voltage, VG2S (V)

Note:

Gate 2 to Source Voltage, VG2S (V)

Note:

1. Initial bias conditions. VG1S set to obtain

specifieddraincurrent.

1. Initial bias conditions. VG1S set to obtain

specifieddraincurrent.

POWER GAIN AND NOISE FIGURE vs.

DRAIN CURRENT

DS = 5 V

G2S = 1 V

f = 900 MHz

Drain Current, ID (mA)

NE25139

NONLINEAR MODEL

UNITS FOR MODEL PARAMETERS

Parameter

Units

time

seconds

farads

henries

ohms

capacitance

inductance

resistance

voltage

volts

current

amps

FET NONLINEAR MODEL PARAMETERS⁽¹⁾

Parameters

FET1

FET2

Parameters

FET1

FET2

UGW

NGF

100e-6

IDSOC

RDB

0.07

1.0e9

0.16e-12

0.005

11.1

0.07

1.0e9

0.16e-12

0.005

11.1

8.78e-10

1.33

8.78e-10

1.33

CBS

GDBM

KDB

VDSM

7.1e-11

0.0475

0.0107

0.0001

44.9

7.1e-11

0.0875

0.0051

0.0052

44.9

GMMAXAC

GAMMAAC

KAPAAC

PEFFAC

VTOAC

VTSOAC

VDELTAC

GMMAX

GAMMA

KAPA

RIS

RID

TAU

5.17e-12

1.19e-13

6.1e-13

1.6e-13

-1.1

5.17e-12

1.19e-13

6.1e-13

1.6e-13

-1.1

CDSO

C11O

C11TH

VINFL

DELTGS

DELTDS

LAMBDA

C11DELT

C12O

C12SAT

CGDSAT

KBK

-1.584

-100

-1.545

-100

0.062

0.0554

0.006

0.046

1.636

-1.57

-100

0.062

0.0304

0.005

0.0005

1.636

-1.5

1.82

0.682

\0.036

1.82

0.682

0.036

PEFF

VTO

VTSO

-10

6.81e-14

0.03

6.5

6.81e-14

0.03

6.5

VDELT

VCH

0.135

0.1

VSAT

1.119

-0.654

1.119

-0.0035

VBR

VGO

NBR

VDSO

(1) Libra EEFET3 Model

NE25139

NONLINEAR MODEL

SCHEMATIC

PORT

Pdrain

port = 2

RES

CAP

Cg2d

R = 4.58

C = 0.15

EEFET3

FET2

PORT

port = 3

UGW=0

N=0

FILE = NE720_b.mdif

MODE = nonlinear

IND

Lg2

L = 0.40

RES

Rg2

R = 1.44

CAP

C12

C = 0.32

RES

RDS

R12

R = 1.13

CAP

Cg1d

R = 711

C = 5.64e-03

EEFET3

FET1

PORT

CAP

UGW=0

N=0

FILE = NE720_b.mdif

MODE = nonlinear

Pgate1

port = 1

IND

Lg1

L = 1.65

CDS

RES

Rg1

R = 1.52

C = 7.60e-02

CAP

Cg1s

C = 0.41

RES

R = 5.79

CAP

Cg2s

C = 0.39

IND

L = 1.78

UNITS

PORT

Parameter

Units

port = 4

capacitance

inductance

resistance

picofarads

nanohenries

ohms

MODEL RANGE

Frequency: 0.1 to 4 GHz

Bias: VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA

NOTES:

1. This UGW value scales the model parameters on page 1.

2. This N value is the number of gate fingers and scales the

model parameters on page 1.

NE25139

TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)

+90

j50

+60

+120

j100

j150

j250

+30

+150

j10

S12

4 GHz

S22

.1 GHz

+180

0˚

.5 .10 .15 .20 .25

S11

4 GHz

2150

100 150 250

S11

.1 GHz

S21

.1 GHz

–

S12

.1 GHz

1.0

-j250

-j10

S22

4 GHz

1.5

2.0

-30˚

-150

Coordinates in Ohms

Frequency in GHz

-j150

-j100

-j25

S21

2.5

-90

(VDS = 5 V, VG2S = 0 V, IDS = 10 mA)

-60˚

-120

-j50

NE25139

VDS = 5 V, VG2S = 0 V, IDS = 10 mA

FREQUENCY

(GHz)

S11

S21

S12

S22

S21

MAG¹

(dB)

MAG

ANG

MAG

ANG

MAG

0.001

ANG

MAG

ANG

(dB)

0.47

0.51

0.70

1.14

1.18

1.49

2.03

2.21

1.34

0.32

0.04

0.07

5.8

5.7

5.6

5.5

3.6

3.0

2.9

2.1

1.6

32.9

32.8

27.5

24.2

22.6

19.2

16.6

17.2

17.8

15.1

14.6

0.1

0.2

0.4

0.6

0.9

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1.0

-4

-8

1.96

1.92

1.91

1.90

1.88

1.52

1.41

1.39

1.37

1.20

174

169

158

148

132

126

-6

0.96

0.95

0.94

0.95

0.96

0.97

0.96

-1

-2

-3

-4

-5

-6

-9

-12

-18

-27

-42

0.001

0.002

0.004

0.006

0.008

0.012

0.023

0.039

0.042

0.99

0.97

0.94

0.92

0.82

0.69

0.60

0.51

0.63

-15

-23

-35

-39

-61

-86

-110

118

-131

-147

-167

153

162

157

-47

Note:

1. GainCalculations:

1 + | ∆ |²- |S11

²- |S22

|S21

K ²- 1 ). _{When K ≤ 1, MAG is undefined and MSG values are used.}

∆ = S11 S22 - S21 S12

|S21

|S12

(

K ±

MAG =

MSG =

, K =

|S12

2 |S12

S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

NE25139

TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)

j50

+90

+60

+120

j25

j100

S21

1.2 GHz

j150

j250

+30

+150

j10

S22

.1 GHz

+180

100 150 250

0˚

.5 .10 .15 .20 .25

S11

.1 GHz

–

S22

4 GHz

1.0

-j250

-j10

S11

4 GHz

1.5

2.0

-30˚

-150

-j150

Coordinates in Ohms

Frequency in GHz

-j100

-j25

S21

(VDS = 5 V, VG2S = 1 V, ID = 10 mA)

2.5

-90

-60˚

-120

-j50

NE25139

VDS = 5 V, VG2S = 1 V, ID = 10 mA

MAG¹

(dB)

FREQUENCY

S11

S21

S12

S22

S21

(dB)

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

0.47

0.51

0.70

1.14

1.18

1.49

2.03

2.21

1.34

0.32

0.04

0.07

5.83

5.7

5.6

5.5

3.6

3.0

2.9

2.1

1.6

2.9

32.8

27.5

24.2

22.6

19.2

16.6

17.2

17.8

15.1

14.6

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

.99

.98

.97

.96

.95

.94

.92

.91

.88

-3

-7

-9

2.36

2.39

2.31

2.23

2.42

2.30

2.33

2.23

2.45

2.30

2.35

2.37

177

169

164

160

158

150

146

142

137

131

126

124

.001

.002

.003

.004

.005

.006

.97

.98

.97

.99

.96

.99

.96

.99

.97

.98

.99

-1

-3

-6

-8

-9

-13

-11

-15

-13

-16

-19

-22

-25

-29

-35

Note:

1. GainCalculations:

1 + | ∆ |²- |S11 ²- |S22

| |

|S21

K ²- 1 ). _{When K ≤ 1, MAG is undefined and MSG values are used.}

∆ = S11 S22 - S21 S12

|S21

(

K ±

MAG =

MSG =

, K =

|S12

2 |S12

S21|

MAG = Maximum Available Gain, MSG = Maximum Stable Gain

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 39

(SOT-143)

ORDERING INFORMATION

+0.2

2.8

-0.3

PART

AVAILABILITY IDSS RANGE MARKING

(mA)

+0.10

-0.05

(LEADS 2, 3, 4)

+0.2

-0.1

0.4

1.5

NUMBER

NE25139

Bulk up to 3K

3K/Reel

5 - 40

NE25139-T1

2.9 ± 0.2 0.95

1.9

NE25139U71

NE25139T1U71

NE25139U72

NE25139T1U72

NE25139U73

NE25139T1U73

NE25139U74

NE25139T1U74

Bulk up to 3K

3K/Reel

5 - 15

U71

U72

U73

U74

0.85

5 - 15

Bulk up to 3K

3K/Reel

10 - 25

20 - 35

30 - 40

+0.10

-0.05

0.6

Bulk up to 3K

3K/Reel

CONNECTIONS

1. Source

2. Drain

Bulk up to 3K

3K/Reel

+0.2

3. Gate 2

1.1

4. Gate 1

0.8

+0.10

-0.1

0.16

-0.06

5˚

0 to 0.1

Note: All dimensions are typical unless otherwise specified.

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

8/98

DATA SUBJECT TO CHANGE WITHOUT NOTICE

NE25139U71 [NEC]

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