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NE25339 [NEC]

GENERAL PURPOSE DUAL-GATE GaAs MESFET; 通用双栅砷化镓MESFET
NE25339
元器件型号： NE25339
生产厂家： NEC    NEC
描述和应用：

GENERAL PURPOSE DUAL-GATE GaAs MESFET
通用双栅砷化镓MESFET

晶体 晶体管 光电二极管 栅 放大器
PDF文件： 总6页 (文件大小：51K)
下载文档：  下载PDF数据表文档文件
型号参数：NE25339参数
 查看货源

NE25339-T1

 GENERAL PURPOSE DUAL-GATE GaAs MESFET

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29 NEC

NE25339T1U76

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD, 39, 4 PIN

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0 NEC

NE25339T1U76

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339T1U77

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD, 39, 4 PIN

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0 NEC

NE25339T1U77

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339T1U78

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339T2U77

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339T2U78

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339U76

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD, 39, 4 PIN

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0 NEC

NE25339U76

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE25339U79

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD, 39, 4 PIN

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0 NEC

NE25339U79

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 CEL

NE27200

 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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65 NEC

NE27200

 RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Silicon, N-Channel, Hetero-junction FET,

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0 NEC

NE27200-A

 暂无描述

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0 NEC
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