NE32684A-T1 [NEC]
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET; 超低噪声赝HJ FET
| 型号： | NE32684A-T1 |
| 厂家： | 
NEC |
| 描述： | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| 文件： | 总5页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE32684A
NOT RECOMMENDED FOR NEW DESIGN
NOISE FIGURE & ASSOCIATED
FEATURES
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
• VERY LOW NOISE FIGURE:
24
21
18
15
12
9
1.2
1
0.5 dB typical at 12 GHz
GA
• HIGH ASSOCIATED GAIN:
11.5 dB Typical at 12 GHz
• LG = 0.20 µm, WG = 200 µm
0.8
0.6
0.4
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
NF
DESCRIPTION
0.2
0
The NE32684A is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
6
1
10
30
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE32684A
84AS
SYMBOLS
NF1
PARAMETERS AND CONDITIONS
Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz
Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz
UNITS
dB
MIN
TYP
0.5
MAX
0.6
GA1
dB
10.0
11.5
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
dBm
dBm
8.5
10.75
VDS = 2 V, IDS = 20 mA
G1dB
Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB
dB
11.0
11.5
IDSS
VP
Saturated Drain Current, VDS = 2 V,VGS = 0 V
Pinch-off Voltage, VDS = 2 V, IDS = 100 µA
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -3 V
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
mA
V
15
-2.0
45
40
-0.8
60
70
-0.2
gm
mS
IGSO
µA
0.5
750
10.0
350
RTH (CH-A)
RTH (CH-C)
Note:
°C/W
°C/W
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
NE32684A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(GHz)
NFOPT
(dB)
GA
ΓOPT
SYMBOLS
VDS
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
DrainCurrent
UNITS RATINGS
(dB)
MAG
ANG
Rn/50
V
V
4.0
-3.0
1
0.28
22.4
.90
17
0.45
VGS
2
4
0.30
0.33
0.37
0.40
0.45
0.50
0.62
0.75
0.91
1.10
19.4
16.3
14.5
13.3
12.2
11.5
10.7
10.2
9.7
.85
.72
.62
.54
.48
.42
.38
.34
.34
.38
32
64
0.37
0.27
0.21
0.15
0.10
0.07
0.07
0.08
0.09
0.10
IDS
mA
µA
°C
°C
mW
IDSS
IGRF
GateCurrent
200
6
91
TCH
Channel Temperature
StorageTemperature
TotalPowerDissipation
150
8
116
138
164
-169
-139
-101
-77
TSTG
PT
-65 to +150
165
10
12
14
16
18
201
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
9.2
Note:
1. Data at 20 GHz is extrapolated, not measured.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE AND
ASSOCIATED GAIN vs. DRAIN CURRENT
TOTAL POWER DISSIPATION vs.
AMBIENTTEMPERATURE
VDS = 2 V, f = 12 GHz
250
14
1.8
12
10
8
1.6
200
G
A
1.4
1.2
1.0
0.8
0.6
Infinite
Heat sink
= TLEAD
150
100
T
A
6
Free Air
4
2
NF
50
0
0
0.4
0 2
5
10
15
20
25
30
35
0
25
50
75
100 125 150 175 200
Drain Current, IDS (mA)
Ambient Temperature, TA (°C)
TRANSCONDUCTANCEvs.
DRAIN CURRENT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
100
80
50
40
0.0 V
-0.1
60
40
20
0
-0.2
-0.3
30
20
10
0
-0.4
-0.5
-0.6
-0.7
0
1.5
3.0
0
10
20
30
40
50
Drain to Source Voltage, VDS (V)
Drain Current, IDS (mA)
NE32684A
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, IDS = 10 mA)
NE32684A
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
S12
S22
K
S21
MAG1
(dB)
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
0.999
0.999
0.999
0.991
0.960
0.922
0.873
0.816
0.758
0.712
0.667
0.629
0.592
0.549
0.513
0.487
0.464
0.443
0.423
0.415
0.414
0.413
0.432
-2.0
-3.6
-9.0
4.879
4.872
4.859
4.796
4.750
4.618
4.370
4.179
3.962
3.720
3.527
3.348
3.218
3.104
2.994
2.901
2.825
2.763
2.707
2.638
2.614
2.581
2.528
178.4
176.7
171.5
162.2
146.0
130.4
115.8
101.5
87.9
74.7
63.3
51.3
39.9
28.3
17.1
5.8
-4.5
-16.3
-27.6
-40.1
-52.5
-65.4
-78.0
0.002
0.003
0.008
0.015
0.029
0.042
0.054
0.062
0.070
0.077
0.084
0.090
0.095
0.103
0.110
0.115
0.121
0.130
0.138
0.144
0.152
0.161
0.167
88.8
88.1
85.9
77.7
70.4
60.0
52.4
45.2
38.9
32.5
27.9
22.7
18.5
13.5
8.1
3.4
-1.2
-7.7
-13.9
-22.2
-30.1
-38.6
-49.2
0.555
0.554
0.556
0.552
0.541
0.520
0.505
0.478
0.454
0.437
0.425
0.421
0.418
0.410 -105.2
0.396 -114.2
0.382 -123.2
0.368 -132.4
0.369 -143.0
0.373 -154.5
0.374 -166.2
0.371 -176.5
-1.9
-2.8
-6.0
0.06
0.04
0.01
0.13
0.24
0.36
0.45
0.57
0.68
0.76
0.83
0.88
0.92
0.96
0.99
1.02
1.03
1.01
0.99
0.98
0.95
0.93
0.91
13.8
13.7
13.7
13.6
13.5
13.3
12.8
12.4
12.0
11.4
10.9
10.5
10.1
9.8
9.5
9.2
9.0
8.8
8.6
8.4
8.3
8.2
33.9
32.1
27.8
25.0
22.1
20.4
19.1
18.3
17.5
16.8
16.2
15.7
15.3
14.8
14.3
13.1
12.5
12.6
12.9
12.6
12.3
12.0
11.8
-17.6
-33.9
-49.4
-64.5
-79.0
-92.9
-106.0
-117.2
-128.8
-140.1
-152.4
-165.5
-179.2
168.1
154.0
139.4
123.9
107.4
89.2
-12.0
-23.1
-33.0
-42.8
-52.5
-62.2
-71.8
-79.7
-88.7
-96.8
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
0.360
0.341
171.9
158.7
74.1
8.1
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11 2 - |S22
| |
|S21
|S12
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11
,
S22 - S21 S12
|S21
|S12
|
|
(K ±
MSG =
, K =
MAG =
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE32684A
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
Coordinates in Ohms
Frequency in GHz
(VDS = 2 V, ID = 20 mA)
NE32684A
VDS = 2 V, ID = 20 mA
FREQUENCY
S11
S21
S12
S22
K
S21
MAG1
(dB)
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
0.480
ANG
(dB)
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
0.999
0.999
0.998
0.986
0.948
0.894
0.833
0.766
0.703
0.653
0.607
0.569
0.529
0.487
0.554
0.428
0.407
0.387
0.368
0.359
0.358
0.361
0.379
-2.3
-4.0
-9.6
-18.9
-36.2
-52.3
-67.8
-82.1
-95.8
-108.6
-119.6
-130.6
-141.4
-153.2
-166.0
-179.3
167.8
154.5
139.9
124.4
107.6
89.4
6.403
6.366
6.384
6.298
6.108
5.792
5.404
5.063
4.713
4.385
4.112
3.861
3.686
3.517
3.376
3.262
3.165
3.081
3.007
2.934
2.910
2.865
2.812
178.0
176.1
170.6
161.0
143.6
127.1
112.1
97.6
84.3
71.3
59.8
48.6
0.002
0.003
0.007
0.014
0.026
0.038
0.049
0.058
0.067
0.074
0.082
0.090
0.097
0.107
0.114
0.121
0.130
0.138
0.146
0.154
0.160
0.169
0.174
88.9
88.6
87.6
77.6
72.2
62.0
55.8
49.4
44.1
38.3
33.8
28.3
23.4
18.4
11.8
6.3
-2.0
-2.9
-5.9
0.06
0.04
0.03
0.17
0.30
0.46
0.56
0.68
0.77
0.85
0.90
0.93
0.96
0.98
1.00
1.01
1.01
0.99
0.97
0.96
0.94
0.92
0.91
16.1
16.1
16.1
16.0
15.7
15.3
14.6
14.1
13.5
12.8
12.3
11.7
11.3
10.9
10.7
10.3
10.0
9.8
35.0
33.3
29.6
26.5
23.7
21.8
20.4
19.4
18.5
17.7
17.0
16.3
15.8
15.2
14.4
13.6
13.3
13.5
13.1
12.8
12.6
12.3
12.1
0.480
0.480
0.476
0.467
0.449
0.436
0.413
0.394
0.382
0.374
0.375
0.378
0.374
0.365
0.354
0.341
0.345
0.352
0.353
0.349
0.337
0.319
-11.5
-22.0
-31.2
-40.4
-49.2
-58.3
-67.4
-74.9
-83.3
-90.8
-99.4
-108.0
-116.8
-125.5
-136.6
-148.4
-160.0
-170.6
177.9
165.2
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
37.5
26.0
14.8
4.1
-5.9
0.6
-5.4
-17.3
-27.9
-40.2
-52.3
-65.4
-77.8
-13.5
-21.6
-30.1
-39.1
-49.0
9.6
9.3
9.3
9.1
73.7
9.0
Note:
1. GainCalculation:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|
|S21
|S12
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11
,
S
22 - S21 S12
|S21
|S12
|
|
(K ±
MSG =
, K =
MAG =
2 |S12
S21
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE32684A
OUTLINE DIMENSIONS(Units in mm)
ORDERING INFORMATION
PART
NUMBER
AVAILABILITY
PACKAGE
OUTLINE
PACKAGE OUTLINE 84AS
NE32684AS
Bulk up to 1K
1K/Reel
84AS
84AS
NE32684A-T1
1.78 ± 0.2
Note:
Long leaded (1.7 mm min.) 84A package available upon request in
bulk quantitites up to 1000 pcs. To order specify NE32684A-SL.
S
0.5 ± 0.1
(ALL LEADS)
D
1.78 ± 0.2
G
V
1.0 ±0.2 (ALL LEADS)
S
1.7 MAX
+0.07
0.1
-0.03
Part Number Designator (Letter).
When the letter is upright,
the gate lead is to the right.
EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
·
Headquarters
·
4590 Patrick Henry Drive
·
Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号：
NE32684A-T2
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
CEL
NE32684AS
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
CEL
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