NE32984D [NEC]

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET; 超低噪声赝HJ FET


型号：	NE32984D
厂家：	NEC
描述：	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 超低噪声赝HJ FET 晶体小信号场效应晶体管射频小信号场效应晶体管
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中文：	中文翻译
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ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

NE32984D

NOISE FIGURE & ASSOCIATED

FEATURES

GAIN vs. FREQUENCY

VDS = 2 V, IDS = 10 mA

• VERY LOW NOISE FIGURE:

1.2

1.0

0.40 dB Typical at 12 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB Typical at 12 GHz

• LG ≤ 0.20 µm, WG = 200 µm

0.8

• LOW COST METAL CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

0.6

0.4

0.2

DESCRIPTION

The NE32984D is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in an epoxy-sealed,

metal/ceramic package and is intended for high volume con-

sumer and industrial applications.

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE32984D

84D

SYMBOLS

PARAMETERS AND CONDITIONS

Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz

Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz

Saturated Drain Current, VDS = 2 V,VGS = 0 V

Pinch-off Voltage, VDS = 2 V, IDS = 100 µA

Transconductance, VDS = 2 V, ID = 10 mA

UNITS

MIN

TYP

0.40

12.5

MAX

NF¹

0.50

11.0

IDSS

-2.0

-0.7

-0.2

IGSO

Gate to Source Leakage Current, VGS = -3 V

Thermal Resistance (Channel to Ambient)

µA

0.5

10.0

350

RTH (CH-A)

RTH (CH-C)

°C/W

750

Thermal Resistance (Channel to Case)

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not each specimen.

California Eastern Laboratories

NE32984D

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

NOISE PARAMETERS

VDS = 2 V, ID = 10 mA

SYMBOLS

VDS

PARAMETERS

Drain to Source Voltage

Gate to Source Voltage

DrainCurrent

UNITS RATINGS

FREQ.

(GHz)

NFMIN.

(dB)

Γopt

4.0

-3.0

(dB)

MAG

ANG

Rn/50

VGS

2.0

0.29

20.0

0.85

0.30

IDS

µA

°C

IDSS

4.0

6.0

0.30

0.31

0.34

0.37

0.40

0.49

0.63

0.81

18.3

16.5

15.0

13.6

12.5

12.0

11.8

11.5

0.75

0.68

0.61

0.56

0.52

0.47

0.40

0.31

0.28

0.20

0.13

0.09

0.05

0.04

0.07

IGRF

GateCurrent

100

TCH

Channel Temperature

StorageTemperature

TotalPowerDissipation

150

8.0

10.0

12.0

14.0

16.0

18.0

111

137

164

-168

-139

TSTG

°C

-65 to +150

165

Note:

1. Operation in excess of any one of these parameters may result in

permanent damage.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

200

150

100

GS = 0 V

-0.2 V

-0.4 V

-0.6 V

-0.8 V

3.0

1.5

200

100

150

Drain to Source Voltage, VDS (V)

Ambient Temperature, TA (°C)

NOISE FIGURE AND ASSOCIATED GAIN vs.

DRAIN CURRENT

MAXIMUM STABLE GAIN AND FORWARD

INSERTION GAIN vs. FREQUENCY

DS = 2 V

f = 12 GH

D = 10 mA

MSG

2.0

1.5

1.0

0.5

IS21S

10 14

20 30

Frequency, f (GHz)

Drain Current, ID (mA)

NE32984D

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

NE32984D

VDS = 2 V, ID = 10 mA

FREQUENCY

(GHz)

S11

S21

S12

S22

MAG¹

MAG

ANG

-26.4

MAG

ANG

MAG

ANG

MAG

ANG

-32.0

-47.8

-64.5

-81.9

-99.8

(dB)

.984

.960

.919

.868

.816

.786

.759

.736

.689

.659

.621

.590

.554

.522

.491

.461

.452

4.583

4.480

4.332

4.141

3.923

3.786

3.659

3.547

3.375

3.264

3.217

3.186

3.172

3.180

3.220

3.303

3.367

146.9

130.6

114.3

98.8

84.4

70.8

57.1

43.1

30.1

17.5

4.9

.029

.041

.050

.057

.060

.064

.066

.068

.071

.074

.079

.085

.093

.104

.114

.124

.137

66.4

55.9

47.9

38.5

31.2

26.0

21.7

18.2

16.0

13.2

11.4

7.3

2.0

-5.5

-12.6

-23.3

-36.4

.549

.520

.481

.447

.418

.396

.382

.374

.368

.370

.374

.391

.406

.417

.432

.445

.453

.13

.22

.31

.45

.58

.63

.69

.75

.86

.91

.94

.92

.91

.86

.82

.78

.72

22.0

20.4

19.4

18.6

18.2

17.7

17.4

17.2

16.8

16.4

16.1

15.7

15.3

14.9

14.5

14.3

13.9

-39.3

-52.8

-64.5

-75.5

-85.7

-95.9

-116.7

-132.6

-147.8

-163.0

-178.3

167.4

155.0

143.2

132.1

119.7

106.3

91.0

-106.3

-116.2

-125.6

-135.5

-146.3

-157.9

-171.0

173.0

153.2

-8.0

-21.3

-35.2

-49.9

-65.6

-83.4

129.4

Note:

1. Gain calculation:

1 + | ∆ |²- |S11|²- |S22| ²

|S21|

|S12|

K ²- 1 ). _{When K ≤ 1, MAG is undefined and MSG values are used.}

∆ = S11 S22 - S21 S12

|S21|

|S12|

(K ±

MAG =

MSG =

, K =

2 |S12 S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

NE32984D

OUTLINE DIMENSIONS(Units in mm)

PACKAGE OUTLINE 84D

1.78 ± 0.2

0.5 ± 0.1

(ALL LEADS)

1.78 ± 0.2

1.0 MIN ±0.2 (ALL LEADS)

1.7 MAX

+0.07

0.1

-0.03

Part Number Designator (Letter).

When the letter is upright,

the gate lead is to the right.

ORDERING INFORMATION

PART

NUMBER

AVAILABILITY

LEAD

LENGTH

PACKAGE

OUTLINE

NE32984D-S

NE32984D-T1

NE32984D-SL

Bulk up to 1K

1K/Reel

1.0 mm

1.7 mm

84D

Bulk up to 1K

84D-SL

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

PRINTED IN USA ON RECYCLED PAPER - 1/96

DATA SUBJECT TO CHANGE WITHOUT NOTICE

NE32984D [NEC]

相关型号：

NE32984D-S

NE32984D-SL

NE32984D-SL

NE32984D-T1

NE32984D-T1A

NE329S01

NE329S01-T1

NE329S01-T1B

NE329S01-T1B

NE33200

NE33200M

NE33200N