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NE425S01_98

更新时间：2024-09-18 06:05:02
品牌：NEC
描述：C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE425S01_98 概述

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C到Ku波段超低噪声放大器N沟道HJ -FET

NE425S01_98 数据手册

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PRELIMINARY DATA SHEET  
C to KU BAND SUPER LOW  
NOISE AMPLIFIER N-CHANNEL HJ-FET  
NE425S01  
NOISE FIGURE & ASSOCIATED  
GAIN vs. FREQUENCY  
FEATURES  
• SUPER LOW NOISE FIGURE:  
24  
0.60 dB TYP at 12 GHz  
VDS = 2 V  
ID = 10 mA  
• HIGH ASSOCIATED GAIN:  
12.0 dB TYP at f = 12 GHz  
20  
16  
12  
Ga  
• GATE LENGTH: ≤ 0.20 µm  
• GATE WIDTH: 200 µm  
• LOW COST PLASTIC PACKAGE  
1.0  
0.5  
0
DESCRIPTION  
8
TheNE425S01isaHetero-JunctionFETthatutilizesthehetero  
junctiontocreatehighmobilityelectrons. Itsexcellentlownoise  
and high associated gain make it suitable for DBS and other  
commercial applications.  
NF  
4
1
2
4
6
8
10 14  
20 30  
Frequency, f (GHz)  
NEC's stringent quality assurance and test procedures assure  
the highest reliability and performance.  
RECOMMENDED  
OPERATING CONDITIONS (TA = 25°C)  
SYMBOLS  
CHARACTERISTICS  
Drain to Source Voltage  
Drain Current  
UNITS MIN TYP MAX  
VDS  
ID  
V
2
3
20  
0
mA  
dBm  
10  
Pin  
Input Power  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE425S01  
S01  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz  
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz  
Transconductance, VDS = 2 V, ID = 10 mA  
UNITS  
MIN  
TYP  
0.60  
12.0  
60  
MAX  
NF1  
dB  
dB  
0.80  
1
GA  
10.5  
45  
gm  
mS  
IDSS  
VGS(off)  
IGSO  
Saturated Drain Current, VDS = 2 V, VGS = 0 V  
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA  
Gate to Source Leak Current, VGS = -3 V  
mA  
V
20  
60  
-0.7  
0.5  
90  
-2.0  
10  
-0.2  
µA  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line  
as a "go-no-go" screening tuned for the "generic" type but not each specimen.  
California Eastern Laboratories  
NE425S01  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
NOISE FIGURE, ASSOCIATED GAIN  
vs. DRAIN CURRENT  
SYMBOLS  
PARAMETERS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
UNITS RATINGS  
V
DS = 2V  
14  
13  
VDS  
VGS  
ID  
V
V
4.0  
-3.0  
f = 12 GHz  
Ga  
mA  
µA  
mW  
°C  
°C  
IDSS  
12  
11  
10  
IG  
Gate Current  
100  
2.0  
1.5  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
165  
TCH  
Tstg  
125  
-65 to +125  
1.0  
0.5  
Note:  
1. Operation in excess of any one of these parameters may result in  
permanent damage.  
NF  
0
10  
20  
30  
Drain Current, ID (mA)  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
250  
200  
100  
80  
VGS = 0 V  
150  
100  
50  
60  
-0.2 V  
40  
20  
-0.4 V  
-0.6 V  
-0.8 V  
0
50  
100  
150  
200  
250  
0
1.5  
3.0  
Drain to Source Voltage, VDS (V)  
Ambient Temperature, TA (°C)  
MAXIMUM AVAILABLE GAIN, FORWARD  
INSERTION GAIN vs. FREQUENCY  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
24  
20  
16  
V
DS = 2 V  
VDS = 2 V  
I
D = 10 mA  
60  
40  
MSG.  
MAG.  
2
IS21s  
l
12  
8
20  
0
4
-2.0  
-1.0  
0
1
2
4
6
8
10 14 20 30  
Gate to Source Voltage, VGS (V)  
Frequency, f (GHz)  
NE425S01  
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)  
90˚  
1
.8  
1.5  
.6  
2
.4  
135˚  
45˚  
3
S
11  
18 GHz  
4
.2  
5
S12  
0.5 GHz  
S
22  
18 GHz  
S
22  
10  
20  
0.5 GHz  
S
11  
S21  
0.5 GHz  
4
0.025 0.050  
0
.2  
.4  
.6 .8  
1
1.5  
2
3
5
10 20  
180˚  
0˚  
0.5 GHz  
-20  
-10  
1.000  
-5  
-4  
-.2  
2.000  
3.000  
S12  
18 GHz  
S21  
18 GHz  
-3  
-.4  
315˚  
225˚  
-2  
4.000  
270˚  
-.6  
-1.5  
-.8  
-1  
Coordinates in Ohms  
Frequency in GHz  
VDS = 2 V, IDS = 10 mA  
VDS = 2 V, ID = 10 mA  
FREQUENCY  
S11  
S21  
S12  
S22  
K
MAG1  
(dB)  
(GHz)  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
0.50  
1.00  
1.50  
2.00  
2.50  
3.00  
3.50  
4.00  
4.50  
5.00  
5.50  
6.00  
6.50  
7.00  
7.50  
8.00  
8.50  
0.998  
0.991  
0.983  
0.973  
0.963  
0.952  
0.936  
0.918  
0.896  
0.864  
0.830  
0.796  
0.762  
0.731  
0.703  
0.675  
0.647  
0.624  
0.597  
0.571  
0.536  
0.501  
0.474  
0.454  
0.440  
0.432  
0.430  
0.442  
0.466  
0.514  
0.592  
-6.25  
-12.36  
-18.30  
-24.28  
-30.28  
-36.31  
-42.52  
-48.91  
-55.17  
-61.77  
-68.21  
-74.65  
-81.27  
-87.80  
-94.41  
-101.21  
-107.84  
-114.92  
-122.27  
-130.41  
-138.75  
-147.71  
-157.02  
-167.49  
-178.22  
170.87  
149.21  
127.80  
106.73  
87.16  
4.353  
4.325  
4.304  
4.300  
4.268  
4.253  
4.228  
4.205  
4.159  
4.099  
4.038  
3.970  
3.888  
3.825  
3.769  
3.708  
3.660  
3.623  
3.586  
3.532  
3.484  
3.434  
3.329  
3.263  
3.208  
3.156  
3.051  
2.924  
2.770  
2.610  
2.457  
172.87  
166.07  
159.56  
152.97  
146.39  
139.87  
133.14  
126.39  
119.62  
112.65  
105.96  
99.70  
93.42  
87.11  
81.02  
75.10  
68.76  
62.69  
56.50  
49.97  
43.60  
37.56  
31.21  
25.00  
18.95  
13.02  
-0.17  
0.006  
0.013  
0.019  
0.025  
0.030  
0.036  
0.042  
0.047  
0.052  
0.056  
0.060  
0.064  
0.067  
0.070  
0.073  
0.076  
0.078  
0.081  
0.083  
0.085  
0.088  
0.089  
0.091  
0.092  
0.093  
0.094  
0.096  
0.098  
0.099  
0.100  
0.100  
85.38  
81.34  
77.34  
73.13  
68.91  
65.00  
60.80  
56.72  
52.48  
48.56  
44.48  
40.77  
37.05  
33.52  
30.04  
26.89  
23.80  
20.66  
17.61  
14.41  
11.15  
7.98  
0.581  
0.577  
0.571  
0.565  
0.556  
0.546  
0.535  
0.522  
0.506  
0.487  
0.466  
0.445  
0.424  
0.404  
0.384  
0.367  
0.351  
0.334  
0.317  
0.296  
0.275  
0.249  
0.222  
0.196  
0.169  
0.146  
0.115  
0.103  
0.119  
0.166  
0.236  
-4.35  
-8.60  
0.075  
0.151  
0.200  
0.249  
0.292  
0.325  
0.376  
0.427  
0.489  
0.576  
0.662  
0.736  
0.815  
0.879  
0.933  
0.979  
1.033  
1.063  
1.108  
1.155  
1.204  
1.272  
1.333  
1.381  
1.417  
1.442  
1.471  
1.491  
1.519  
1.506  
1.418  
28.606  
25.220  
23.551  
22.355  
21.531  
20.724  
20.029  
19.517  
19.030  
18.645  
18.280  
17.926  
17.637  
17.375  
17.129  
16.883  
15.596  
14.973  
14.357  
13.796  
13.247  
12.728  
12.179  
11.816  
11.536  
11.314  
10.957  
10.603  
10.216  
9.963  
-12.75  
-16.87  
-21.01  
-25.10  
-29.22  
-33.29  
-37.48  
-41.54  
-45.70  
-49.87  
-53.98  
-58.13  
-62.07  
-66.26  
-70.16  
-73.96  
-77.74  
-81.66  
-85.75  
-90.60  
-96.41  
-102.92  
-111.44  
-122.20  
-149.45  
175.83  
137.09  
105.34  
85.49  
9.00  
9.50  
10.00  
10.50  
11.00  
11.50  
12.00  
12.50  
13.00  
14.00  
15.00  
16.00  
17.00  
18.00  
4.74  
1.38  
-1.63  
-4.93  
-11.35  
-18.32  
-25.93  
-33.90  
-41.97  
-13.75  
-27.29  
-40.28  
-53.68  
69.36  
10.061  
Note:  
1. Gain Calculation:  
2
1 + | ∆ |2 - |S11 2 - |S22  
| |  
|S21  
|S12  
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.  
∆ = S11 S22 - S21 S12  
|S21  
|S12  
|
|
(K ±  
MAG =  
MSG =  
, K =  
,
2 |S12  
S21|  
MAG = Maximum Available Gain  
MSG = Maximum Stable Gain  
NE425S01  
NONLINEAR MODEL  
SCHEMATIC  
CGD_PKG  
0.001pF  
Ldx  
DRAIN  
0.6nH  
Rdx  
6 ohms  
Q1  
Lgx  
GATE  
0.69nH  
Rgx  
6 ohms  
Lsx  
0.07nH  
CDS_PKG  
0.05PF  
CGS_PKG  
0.07pF  
Rsx  
0.06 ohms  
SOURCE  
FET NONLINEAR MODEL PARAMETERS (1)  
UNITS  
Parameter  
Units  
seconds  
farads  
henries  
ohms  
Parameters  
VTO  
Q1  
-0.8  
Parameters  
RG  
Q1  
3
time  
capacitance  
inductance  
resistance  
voltage  
VTOSC  
ALPHA  
BETA  
GAMMA  
GAMMADC  
Q
0
RD  
2
8
RS  
2
0.103  
0.092  
0.08  
2
RGMET  
KF  
0
volts  
0
current  
amps  
AF  
1
TNOM  
XTI  
27  
3
DELTA  
VBI  
1
MODEL RANGE  
0.715  
3e-13  
1.22  
0
EG  
1.43  
0
Frequency: 0.1 to 18 GHz  
Bias:  
VDS = 1 V to 3 V, ID = 5 mA to 30 mA  
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V  
2/98  
IS  
VTOTC  
BETATCE  
FFE  
N
0
Date:  
RIS  
1
RID  
0
TAU  
4e-12  
0.13e-12  
5000  
1e-9  
0.3e-12  
0.02e-12  
0.3  
CDS  
RDB  
CBS  
CGSO  
CGDO  
DELTA1  
DELTA2  
FC  
0.1  
0.5  
VBR  
Infinity  
(1) Series IV Libra TOM Model  
NE425S01  
TYPICAL NOISE PARAMETERS (TA = 25°C)  
VDS = 2 V, ID = 10 mA  
OUTLINE DIMENSIONS (Units in mm)  
FREQ.  
(GHz)  
NFMIN  
(dB)  
GA  
ΓOPT  
PACKAGE OUTLINE S01  
(dB)  
MAG  
ANG  
Rn/50  
2
0.31  
18.35  
0.93  
14  
0.38  
2.0 ± 0.2  
4
0.34  
0.40  
0.45  
0.52  
0.60  
0.72  
0.86  
1.00  
16.31  
14.56  
13.28  
12.33  
11.11  
10.40  
9.86  
0.80  
0.65  
0.49  
0.36  
0.27  
0.24  
0.30  
0.47  
29  
48  
0.33  
0.25  
0.18  
0.11  
0.08  
0.07  
0.10  
0.22  
6
2.0  
1
±
0.2  
8
72  
10  
12  
14  
16  
18  
102  
139  
-176  
-122  
-58  
2
G
4
9.63  
3
0.65 TYP.  
1.9 ± 0.2  
1.6  
1. Source  
2. Drain  
3. Source  
4. Gate  
0.125 ± 0.05  
0.4 MAX  
4.0 ± 0.2  
ORDERING INFORMATION  
PART  
NUMBER  
SUPPLY FORM  
PACKAGE  
OUTLINE  
NE425S01  
NE425S01-T1  
NE425S01-T1B  
Bulk  
S01  
S01  
S01  
Tape & Reel 1000 pcs./reel  
Tape & Reel 4000 pcs./reel  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM  
PRINTED IN USA ON RECYCLED PAPER -12/98  
DATA SUBJECT TO CHANGE WITHOUT NOTICE  

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