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NE552R679A-T1A-A [NEC]

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NE552R679A-T1A-A


元器件型号：	NE552R679A-T1A-A
生产厂家：	NEC
描述和应用：	暂无描述放大器射频
PDF文件：	总9页 (文件大小：65K)
下载文档：	下载PDF数据表文档文件
型号参数：NE552R679A-T1A-A参数

NE5530F

Operational Amplifier, 2 Func, BIPolar, CDIP14

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3 PHILIPS

NE5530F-A

Operational Amplifier, 2 Func, BIPolar, CDIP14

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1 PHILIPS

NE5530H

Operational Amplifier, 2 Func, BIPolar, MBCY10

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0 PHILIPS

NE5530K1+/-.1%

Fixed Resistor, Metal Film, 0.25W, 30100ohm, 250V, 0.1% +/-Tol, -25,25ppm/Cel

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2 VISHAY

NE5530K1+/-1%

Fixed Resistor, Metal Film, 0.25W, 30100ohm, 250V, 1% +/-Tol, -25,25ppm/Cel

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1 VISHAY

NE5530N

Operational Amplifier, 2 Func, BIPolar, PDIP8

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2 PHILIPS

NE5530N

IC OP-AMP, PDIP8, Operational Amplifier

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2 PHILIPS

NE5530N-A

Operational Amplifier, 2 Func, BIPolar, PDIP8

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1 PHILIPS

NE5530N-B

Operational Amplifier, 2 Func, BIPolar, PDIP8

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1 PHILIPS

NE5530T

IC OP-AMP, MBCY8, Operational Amplifier

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1 PHILIPS

NE5531079A

7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

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0 CEL

NE5531079A

7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

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1 RENESAS

NE5531079A-A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, LEAD FREE PACKAGE-4

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0 NEC

NE5531079A-A

NE5531079A-A

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0 RENESAS

NE5531079A-T1

7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

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0 RENESAS

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