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NE650R279A-A [NEC]

暂无描述;

NE650R279A-A


元器件型号：	NE650R279A-A
生产厂家：	NEC
描述和应用：	暂无描述晶体射频场效应晶体管放大器
PDF文件：	总8页 (文件大小：79K)
下载文档：	下载PDF数据表文档文件
型号参数：NE650R279A-A参数

NE650R279A-T1

0.2 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R279A-T1-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A

0.4 W L, S-BAND POWER GaAs MES FET

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23 NEC

NE650R479A-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE650R479A-T1

0.4 W L, S-BAND POWER GaAs MES FET

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24 NEC

NE650R479A-T1-A

暂无描述

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0 NEC

NE6510179

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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96 CEL

NE6510179A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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130 CEL

NE6510179A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET

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0 NEC

NE6510179A-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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60 CEL

NE6510179A-T1

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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46 CEL

NE6510179A-T1-A

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

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50 CEL

NE6510179A-TI

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET,

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0 NEC

NE6510379A

3 W L-BAND POWER GaAs HJ-FET

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27 NEC

NE6510379A

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN

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0 NEC

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