首页 |元器件品牌

NE900275 [NEC]

Ku-BAND MEDIUM POWER GaAs MESFET; Ku波段中功率的GaAs MESFET
NE900275
型号： NE900275
厂家： NEC    NEC
描述：

Ku-BAND MEDIUM POWER GaAs MESFET
Ku波段中功率的GaAs MESFET

晶体 射频场效应晶体管 开关 CD 局域网
文件： 总5页 (文件大小：72K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
NE9000 SERIES  
NE9001 SERIES  
NE9002 SERIES  
Ku-BAND MEDIUM  
POWER GaAs MESFET  
FEATURES  
TYPICAL LINEAR GAIN vs. FREQUENCY  
•
•
CLASS A OPERATION  
24  
21  
18  
HIGH OUTPUT POWER  
POUT = 26.5 dBm  
G1dB = 7 dB  
•
HIGH POWER ADDED EFFICIENCY  
NE9000  
DESCRIPTION  
15  
The NE9000, NE9001, and NE9002 are 0.5 micron recessed  
gate medium power GaAs FETs for commercial and space  
amplifier and oscillator applications to 20 GHz. Chip configu-  
rations available are: the NE900000, a one cell die of 400 µm  
gate width; the NE900100, a one cell die of 750 µm gate  
width; and the NE900200, a two cell die of 1500 µm total gate  
width. The series is available in chip form or a variety of  
hermetic ceramic packages. The NE900000, NE900100,  
and NE900200 are standard die without wrap-around source-  
metallization, while the NE900000G, NE900100G, and  
NE900200G have wrap-around source metallization. The  
series is space qualified.  
NE9001/9002  
12  
9
6
3
2.0  
10.0  
Frequency (GHz)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
NE900000  
NE900000G  
NE900075  
NE900100  
NE900100G  
NE900175  
NE900200  
NE900200G  
NE900275  
NE900089A  
89A  
PACKAGE OUTLINE  
00 (CHIP), 75  
00 (CHIP), 75  
00 (CHIP), 75  
SYMBOLS  
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX  
IDSS  
Saturated Drain Current at  
VDS = 2.5 V, VGS = 0  
mA  
80  
120 150  
80  
120 150 150 225 300 300 450 600  
VP  
gm  
Pinch-off Voltage at VDS = 2.5 V,  
IDS = 2.5 mA  
V
V
V
-1.5 -3.5  
-5  
-1.5 -3.5  
-5  
IDS = 5 mA  
-2  
-3.5  
50  
-5  
IDS = 10 mA  
-2  
-3.5  
100  
-5  
Transconductance at VDS = 2.5 V,  
IDS = 50 mA  
IDS = 90 mA  
mS  
mS  
mS  
25  
25  
IDS = 180 mA  
RTH (C-C) ThermalResistance(Channel-to-Case)  
°C/W  
180  
0.8  
180  
0.8  
100  
1.5  
50  
3
PT  
TotalPowerDissipation  
W
PTEST  
Power Output at Test Point  
PIN = 11 dBm, VDS = 8V, ID = 50mA,  
f = 8 GHz  
dBm 19.5 20.5  
PIN = 12 dBm,VDS = 8V, ID = 50mA  
f = 14.5 GHz  
dBm  
dBm  
dBm  
19.5 20.5  
PIN = 15 dBm, VDS = 8V, ID = 90mA  
f = 14.5 GHz  
PIN = 19 dBm, VDS = 8 V, ID = 180 mA,  
f = 14.5  
22  
23  
23  
25.5 26.5  
P1dB  
Output Power at 1 dB Compression  
Point,  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dBm  
dBm  
dBm  
dBm  
20.5  
9
20  
25  
G1dB  
Gain at 1 dB Compression Point  
VDS = 8 V, ID = 50 mA, f = 8 GHz  
VDS = 8 V, ID = 50 mA, f = 14.5 GHz  
VDS = 8 V, ID = 90 mA, f = 14.5 GHz  
VDS = 8 V, ID = 180 mA, f = 14.5 GHz  
dB  
dB  
dB  
dB  
8
7
7
ηADD  
Power Added Efficiency  
VDS = 8 V, at P1dB Conditions.  
%
27  
27  
27  
26  
California Eastern Laboratories  
NE9000, NE9001, NE9002 SERIES  
POWER DERATING CURVE  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
3
2
SYMBOLS  
PARAMETERS  
UNITS  
RATINGS  
VDS  
VGS  
ID  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
20  
-9  
NE9002  
DrainCurrent  
NE900000,NE900075/89  
NE900100,NE900175  
NE900200,NE900275  
mA  
mA  
mA  
150  
300  
600  
NE9001  
1
0
IG  
GateCurrent  
NE900000,NE900075/89  
NE900100,NE900175  
NE900200,NE900275  
mA  
mA  
mA  
1.3  
2.6  
5
NE9000  
0
50  
100  
150  
200  
OUTLINE DIMENSIONS (Units in mm)  
Case Temperature, TA (°C)  
PACKAGE OUTLINE 75  
PACKAGE OUTLINE 89A  
+0.15  
GATE  
φ 1.8  
-0.05  
0.5 ± 0.1  
4.0 MIN (ALL LEADS)  
2.03 ± 0.2  
2 PLACES  
SOURCE  
S
2.7±0.3  
2.3±0.1  
0.51  
3.0 MIN BOTH  
LEADS  
DRAIN  
D
G
2.7 TYP  
7.0  
9.8 MAX  
+0.06  
0.1  
S
1.02  
-0.02  
2.3  
1.13  
0.9 MAX  
1.6 MAX  
NE900000(CHIP)  
0.1  
(Units in µm)  
400  
50  
NE900100/NE900200(CHIP)*  
(Units in µm)  
52  
D
550  
50  
53  
D
D
430  
228  
62  
440  
G
130  
240  
S
S
62  
G
G
142  
50  
131  
S
S
S
Die Thickness: 110 to 160 µm  
Recommended Bonding Area.  
Glassivated Area  
50  
116  
80  
Plated Wraparound (Optional)  
HANDLING PRECAUTIONS  
DIE ATTACHMENT  
ture should be lowered.  
Die attach can be accomplished with Au-Ge (390 ± 10°C) preforms in  
a forming gas environment. Epoxy die attach is not recommended.  
PRECAUTIONS  
BONDING  
The user must operate in a clean, dry environment. The chip channel  
isglassivatedformechanicalprotectiononlyanddoesnotprecludethe  
necessity of a clean environment.  
Gate and drain bonding wires should be semi-hard gold wire (3 to 8%  
elongation) 30 microns or less in diameter.  
Bonding should be performed with a wedge tip that has a taper of  
approximately 15°. Die attach and bonding time should be kept to a  
minimum.Asageneralrule,thebondingoperationshouldbekeptwithin  
a300°Cto10minutecurve.Iflongerperiodsarerequired,thetempera-  
Thebondingequipmentshouldbeperiodicallycheckedforsourcesof  
surge voltage and should be properly grounded at all times. In fact, all  
test and handling equipment should be grounded to minimize the  
possibilities of static discharge.  
NE9000, NE9001, NE9002 SERIES  
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS  
NE900000  
VDS = 8 V, ID = 50 mA  
FREQUENCY  
(MHz)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
2000  
3000  
4000  
5000  
6000  
7000  
8000  
9000  
10000  
11000  
12000  
13000  
14000  
15000  
16000  
17000  
18000  
.96  
.90  
.87  
.85  
.82  
.79  
.75  
.73  
.72  
.71  
.72  
.73  
.74  
.75  
.74  
.71  
.65  
-42  
-59  
-73  
-85  
-94  
-103  
-112  
-120  
-128  
-134  
-140  
-144  
-147  
-149  
-151  
-152  
-155  
3.00  
2.71  
2.48  
2.28  
2.10  
1.94  
1.79  
1.64  
1.51  
1.38  
1.27  
1.17  
1.09  
1.04  
1.01  
1.03  
1.10  
148  
136  
125  
114  
105  
96  
88  
80  
73  
67  
62  
58  
54  
51  
48  
45  
40  
.04  
.04  
.05  
.06  
.06  
.07  
.07  
.07  
.07  
.07  
.07  
.07  
.07  
.08  
.09  
.10  
.11  
69  
66  
62  
58  
55  
53  
52  
52  
53  
55  
58  
63  
69  
74  
78  
81  
82  
.80  
.78  
.76  
.74  
.72  
.71  
.70  
.70  
.70  
.71  
.71  
.71  
.71  
.71  
.70  
.69  
.68  
-11  
-12  
-13  
-17  
-20  
-24  
-28  
-32  
-34  
-36  
-38  
-39  
-40  
-41  
-43  
-47  
-53  
NE900100  
VDS = 8 V, ID = 90 mA  
FREQUENCY  
(MHz)  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
2000  
3000  
4000  
5000  
6000  
7000  
8000  
9000  
10000  
11000  
12000  
13000  
14000  
15000  
16000  
17000  
18000  
.91  
.82  
.77  
.75  
.74  
.74  
.73  
.72  
.72  
.72  
.72  
.73  
.73  
.74  
.73  
.71  
.67  
-63  
-81  
-97  
4.54  
3.70  
3.14  
2.75  
2.44  
2.17  
1.93  
1.70  
1.50  
1.34  
1.21  
1.13  
1.08  
1.05  
1.03  
1.00  
.93  
137  
124  
111  
100  
91  
83  
77  
71  
67  
62  
58  
55  
51  
48  
44  
41  
36  
.05  
.05  
.06  
.06  
.07  
.07  
.07  
.07  
.07  
.07  
.07  
.08  
.08  
.09  
.10  
.12  
.13  
63  
55  
51  
48  
47  
48  
49  
52  
55  
60  
65  
70  
74  
78  
80  
82  
82  
.47  
.46  
.44  
.43  
.41  
.40  
.39  
.39  
.40  
.41  
.43  
.46  
.47  
.49  
.49  
.46  
.41  
-26  
-33  
-38  
-43  
-47  
-53  
-58  
-64  
-70  
-76  
-81  
-86  
-90  
-94  
-98  
-102  
-109  
-110  
-120  
-129  
-135  
-141  
-145  
-148  
-150  
-152  
-153  
-155  
-157  
-161  
-167  
NE9000, NE9001, NE9002 SERIES  
NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS  
+90˚  
S12  
+60˚  
+120˚  
S21  
1.5 GH  
+30˚  
S11  
18 GHz  
Z
+150˚  
S12  
18 GH  
Z
1.5 GH  
Z
0˚  
±180˚  
S22  
S21  
18 GHz  
S22  
1.5 GHz  
18 GHZ  
-30˚  
-150˚  
S11  
1.5 GHz  
-60˚  
-120˚  
-90˚  
NE900200  
VDS = 8 V, ID = 180 mA  
FREQUENCY  
GHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
AN  
MAG  
ANG  
MAG  
ANG  
K
MAG1  
1.5  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
0.910  
0.879  
0.850  
0.836  
0.830  
0.827  
0.823  
0.824  
0.822  
0.820  
0.824  
0.818  
0.815  
0.815  
0.813  
0.811  
0.815  
0.811  
-88.000  
-106.000  
-129.000  
-143.000  
-153.000  
-160.000  
-165.000  
-170.000  
-174.000  
-178.000  
176.000  
172.000  
167.000  
163.000  
160.000  
157.000  
154.000  
153.000  
4.852  
4.143  
3.077  
2.413  
1.983  
1.693  
1.490  
1.342  
1.196  
1.100  
1.002  
0.920  
0.840  
0.784  
0.732  
0.690  
0.647  
0.627  
123.000  
112.000  
93.000  
79.000  
69.000  
60.000  
52.000  
44.000  
36.000  
29.000  
22.000  
15.000  
10.000  
4.000  
0.057  
0.065  
0.070  
0.075  
0.077  
0.082  
0.081  
0.086  
0.091  
0.100  
0.108  
0.117  
0.129  
0.146  
0.160  
0.187  
0.207  
0.241  
48.000  
41.000  
34.000  
32.000  
30.000  
33.000  
34.000  
38.000  
42.000  
45.000  
45.000  
48.000  
48.000  
49.000  
50.000  
48.000  
48.000  
45.000  
0.286  
0.274  
0.267  
0.281  
0.303  
0.331  
0.368  
0.406  
0.443  
0.484  
0.524  
0.554  
0.584  
0.601  
0.623  
0.631  
0.635  
0.638  
-56.000  
-68.000  
-82.000  
-92.000  
0.240  
0.323  
0.496  
0.629  
0.751  
0.809  
0.914  
0.892  
0.904  
0.827  
0.739  
0.719  
0.671  
0.588  
0.534  
0.454  
0.437  
0.369  
19.300  
18.044  
16.430  
15.075  
14.108  
13.148  
12.647  
11.933  
11.187  
10.414  
9.674  
8.956  
8.137  
7.300  
6.604  
5.670  
4.949  
4.153  
-102.000  
-108.000  
-114.000  
-120.000  
-125.000  
-130.000  
-134.000  
-137.000  
-141.000  
-144.000  
-146.000  
-151.000  
-156.000  
-162.000  
1.000  
-5.000  
-7.000  
-11.000  
Note:  
1. Gain Calculations:  
1 + | ∆ |2 - |S11|2 - |S22| 2  
|S21|  
|S12|  
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.  
∆ = S11 S22 - S21 S12  
,
|S21|  
|S12|  
(K ±  
MAG =  
MSG =  
, K =  
2 |S12 S21|  
MAG = Maximum Available Gain  
MSG = Maximum Stable Gain  
NE9000, NE9001, NE9002 SERIES  
TYPICAL SMALL SIGNAL SCATTERING PARAMETERS  
+90˚  
+60˚  
+120˚  
S21  
2 GH  
Z
+30˚  
+150˚  
S12  
18 GH  
S22  
18 GH  
S12  
2 GH  
Z
Z
Z
0˚  
±180˚  
S21  
S22  
18 GH  
Z
2 GH  
Z
S11  
18 GH  
Z
-30˚  
-150˚  
S11  
2 GH  
Z
-60˚  
-120˚  
-90˚  
NE900275  
VDS = 8 V, ID = 180 mA  
FREQUENCY  
S11  
S21  
S12  
S22  
GHZ  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
K
MAG1  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
0.900  
0.900  
0.870  
0.860  
0.850  
0.850  
0.830  
0.770  
0.690  
0.560  
0.440  
0.480  
0.690  
0.820  
0.900  
0.920  
0.940  
-123.000  
-146.000  
-161.000  
-172.000  
-180.000  
172.000  
162.000  
151.000  
135.000  
108.000  
56.000  
-19.000  
-69.000  
-97.000  
-115.000  
-126.000  
-136.000  
3.670  
2.760  
2.140  
1.820  
1.610  
1.510  
1.500  
1.520  
1.600  
1.770  
1.880 -80.000  
1.770 -116.000  
1.480 -146.000  
1.110 -175.000  
0.860 162.000  
0.650 141.000  
0.540 127.000  
95.000  
76.000  
54.000  
46.000  
26.000  
16.000  
1.000  
-12.000  
-34.000  
-51.000  
0.060  
0.060  
0.060  
0.060  
0.060  
0.060  
0.060  
0.070  
0.080  
0.090  
0.100  
0.090  
0.070  
0.050  
0.040  
0.040  
0.050  
24.000  
15.000  
3.000  
3.000  
1.000  
-1.000  
-3.000  
-5.000  
-16.000  
-26.000  
-51.000  
-85.000  
-121.000  
-165.000  
158.000  
114.000  
89.000  
0.230  
0.250  
0.280  
0.320  
0.370  
0.410  
0.450  
0.480  
0.510  
0.540  
0.590  
0.610  
0.610  
0.570  
0.560  
0.580  
0.590  
-97.000  
-117.000  
-131.000  
-143.000  
-152.000  
-161.000  
-170.000  
-178.000  
173.000  
162.000  
147.000  
128.000  
108.000  
85.000  
0.325  
0.397  
0.698  
0.850  
0.974  
0.972  
1.051  
1.162  
1.227  
1.311  
1.259  
1.408  
1.392  
1.624  
1.416  
1.498  
1.020  
17.865  
16.628  
15.523  
14.819  
14.287  
14.008  
12.595  
10.931  
10.140  
9.594  
9.681  
9.136  
9.522  
8.835  
9.487  
7.938  
9.472  
65.000  
48.000  
36.000  
Note:  
1. Gain Calculations:  
1 + | ∆ |2 - |S11|2 - |S22| 2  
|S21|  
|S12|  
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.  
∆ = S11 S22 - S21 S12  
,
|S21|  
|S12|  
(K ±  
MAG =  
MSG =  
, K =  
2 |S12 S21|  
MAG = Maximum Available Gain  
MSG = Maximum Stable Gain  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM  
PRINTED IN USA ON RECYCLED PAPER -11/97  
DATA SUBJECT TO CHANGE WITHOUT NOTICE  

相关型号：

NE900400

 RF SMALL SIGNAL, FET
RENESAS

NE900474-15

 KU BAND, GaAs, N-CHANNEL, RF POWER, FET
RENESAS

NE900474-15

 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
CEL

NE900873-11

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD
ETC

NE900873-12

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD
ETC

NE900873-13

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD
ETC

NE900873-14

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD
ETC

NE900873-15

 TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 1.2A I(DSS) | RFMOD
ETC

NE90100

 RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
CEL

NE90115

 RF Small Signal Bipolar Transistor, 0.25A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-33
CEL

NE92

 N-CHANNEL JFET
INTERSIL

NE944

 NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NEC
©2020 ICPDF网 联系我们和版权申明