NESG4030M14-T3FB-A [NEC]
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4 PIN;
| 型号： | NESG4030M14-T3FB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4 PIN 晶体 晶体管 |
| 文件： | 总10页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON GERMANIUM C RF TRANSISTOR
NESG4030M14
NPN SiGe:C RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
FEATURES
•
The device is an ideal choice for low noise, high-gain amplification
NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
Maximum stable power gain: MSG = 15 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 5.8 GHz
SiGe:C HBT technology (UHS4) adopted
•
•
•
•
Improvement of ESD protection
4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG4030M14
NESG4030M14-A
4-pin lead-less minimold 50 pcs
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
(M14, 1208 PKG)
(Pb-Free)
(Non reel)
10 kpcs/reel
NESG4030M14-T3 NESG4030M14-T3-A
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Symbol
Ratings
Unit
V
Note 1
VCBO
5.0
3.0
VCEO
V
Note 1
IB
12
mA
mA
mW
°C
Collector Current
IC
35
Note 2
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
105
Tj
150
Tstg
−65 to +150
°C
Notes 1. VCBO and IB are limited by the permissible current of the protection element.
2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10728EJ02V0DS (2nd edition)
Date Published August 2009 NS
Printed in Japan
2008, 2009
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG4030M14
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Symbol
Pin
MIN.
TYP.
MAX.
3
Unit
dBm
kΩ
Input Power
Base Feedback Resister
−
−
−
−
Rb
150
Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the
ESD protection element is turned on when recommended range of motion in the above table is exceeded.
However, there is no influence of reliability, including deterioration.
R
b
2
Data Sheet PU10728EJ02V0DS
NESG4030M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 4.3 V, IE = 0 mA
−
−
−
−
100
100
540
nA
nA
−
VEB = 0.4 V, IC = 0 mA
VCE = 2 V, IC = 6 mA
Note 1
hFE
270
400
RF Characteristics
Insertion Power Gain
Noise Figure
⏐S21e⏐2 VCE = 2 V, IC = 20 mA, f = 5.8 GHz
8.5
10.5
1.1
−
dB
dB
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
NF
−
1.5
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
Ga
Associated Gain
9.5
11.5
−
dB
ZS = ZSopt, ZL = ZLopt
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
13
−
0.12
15
9
0.25
−
pF
dB
MSGNote 3 VCE = 2 V, IC = 20 mA, f = 5.8 GHz
VCE = 2 V, IC (set) = 6 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
Gain 1 dB Compression Output Power
PO (1 dB)
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
FB/YFB
zK
<R>
Marking
hFE Value
270 to 540
3
Data Sheet PU10728EJ02V0DS
NESG4030M14
<R>
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
200
150
0.3
0.2
0.1
Mounted on Glass Epoxy PWB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
100
50
0
2
4
6
8
10
0
25
50
75
100
125
(°C)
150
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
V
CE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.6
0.8
1
0.4
0.6
0.8
1
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
1
40
30
20
10
V
CE = 3 V
180 A
μ
160
140
μ
μ
A
A
120
μ
A
100
80
μ
μ
A
A
0.1
60
40
μ
A
A
0.01
0.001
μ
IB
= 20
3
μA
0.0001
0.4
0.6
0.8
1
0
1
2
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10728EJ02V0DS
NESG4030M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
V
CE = 2 V
0.1
1
10
(mA)
100
100
100
0.1
1
10
(mA)
100
100
100
Collector Current I
C
Collector Current I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
30
25
20
15
10
5
1 000
100
10
V
CE = 1 V,
VCE = 3 V
f = 2 GHz
0
1
10
0.1
1
10
(mA)
Collector Current I (mA)
C
Collector Current I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
V
CE = 2 V,
V
CE = 3 V,
f = 2 GHz
f = 2 GHz
5
0
0
1
10
1
10
Collector Current I (mA)
C
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10728EJ02V0DS
NESG4030M14
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
25
20
30
25
20
V
CE = 2 V,
V
CE = 1 V,
IC
= 20 mA
I
C
= 20 mA
MSG
MAG
MAG
MAG
MSG
15
10
5
15
10
5
2
MSG
|S21e
|
2
|S21e
|
0
0
1
10
100
1
10
Frequency f (GHz)
100
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 1 V,
IC
= 20 mA
f = 2.4 GHz
25
20
MSG
MAG
MAG
MSG
MAG
15
10
5
2
MSG
|S21e|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Frequency f (GHz)
100
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V,
V
CE = 3 V,
f = 2.4 GHz
f = 2.4 GHz
MSG
MSG
2
2
|S21e
|
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10728EJ02V0DS
NESG4030M14
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
25
20
15
10
5
V
CE = 2 V,
V
CE = 1 V,
f = 5.2 GHz
f = 5.2 GHz
MSG
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
–5
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 1 V,
f = 5.2 GHz
f = 5.8 GHz
MSG
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
100
C
(mA)
Collector Current I (mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V,
V
CE = 3 V,
f = 5.8 GHz
f = 5.8 GHz
MSG
MAG
MSG
MAG
2
2
|S21e
|
|S21e
|
0
0
1
10
Collector Current I
100
1
10
100
C
(mA)
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10728EJ02V0DS
NESG4030M14
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
15
10
5
50
40
30
20
10
0
15
10
5
50
40
30
20
10
0
f = 2.4 GHz , VCE = 2 V,
f = 5.8 GHz , VCE = 2 V,
I
C (set) = 6 mA
I
C (set) = 6 mA
P
out
P
out
0
I
C
I
C
0
–5
–5
–20
–10
–15
–15
–10
–5
0
5
–10
–5
–0
5
10
Input Power Pin (dBm)
Input Power Pin (dBm)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
15
12
9
5
4
3
20
16
12
8
G
a
G
a
2
1
0
2
1
0
6
3
0
4
0
NF
f = 5.8 GHz,
f = 2.4 GHz,
NF
V
CE = 2 V
V
CE = 2 V
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
8
Data Sheet PU10728EJ02V0DS
NESG4030M14
<R>
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)
(Top View)
(Bottom View)
1.0 0.05
+0.07
0.8
0.6
–0.05
0.1
0.2
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
9
Data Sheet PU10728EJ02V0DS
NESG4030M14
•
The information in this document is current as of August, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
相关型号：
NESG4030M14-T3YFB-A
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4 PIN
NEC
NESG4030M14-YFB-A
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4 PIN
RENESAS
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