NNCD3.3G [NEC]

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD; 静电放电噪声,限幅二极管QUARTO类型:共阳极5针mini模具
NNCD3.3G
型号: NNCD3.3G
厂家: NEC    NEC
描述:

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD
静电放电噪声,限幅二极管QUARTO类型:共阳极5针mini模具

瞬态抑制器 二极管 光电二极管 局域网
文件: 总8页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
E.S.D NOISE CLIPPING DIODES  
NNCD3.3G to NNCD7.5G, NNCD27G  
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES  
(QUARTO TYPE : COMMON ANODE)  
5 PIN MINI MOLD  
This product series is a diode developed for E.S.D (Electrostatic  
Discharge) noise protection. Based on the IEC1000-4-2 test on  
electromagnetic interference (EMI), the diode assures an endur-  
ance of no less than 30 KV, thus making itself most suitable for  
external interface circuit protection.  
PACKAGE DIMENSIONS  
(in millimeters)  
2.8 ± 0.2  
+0.1  
1.5  
0.65  
–0.15  
With four elements mounted in the 5 PIN Mini Mold Package, the  
product can cope with high density and automatic packaging.  
1
2
3
5
4
FEATURES  
Based on the electrostatic discharge immunity test (IEC1000-4-  
2), the product assures the minimum endurance of 30 KV.  
Based on the reference supply of the set, the product achieves  
a series over a wide range (11 product name lined up).  
With 4 elements mounted (common anode) mounted in the 5 PIN  
MINI MOLD package, the product can achieve a high density and  
automatic packaging.  
APPLICATIONS  
External interface circuit E.S.D protection.  
Circuits for Waveform clipper, Surge absorber.  
(5 PIN mini MOLD)  
(SC-74A)  
MAXIMUM RATINGS (TA = 25 ˚C)  
PIN CONNECTION  
Power Dissipation  
P
200 mW  
(Total)  
Fig. 5  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (t = 10 µs 1 pulse)  
150 ˚C  
5
4
Tstg  
–55 ˚C to +150 ˚C  
1
2
3
4
5
:
:
:
:
:
K1 Cathode 1  
A
Anode (common)  
K2 Cathode 2  
K3 Cathode 3  
K4 Cathode 4  
1
2
3
Document No. D11645EJ1V1DS00 (1st edition)  
Date Published February 1998 N CP(K)  
Printed in Japan  
1996
©
NNCD3.3G to NNCD7.5G, NNCD27G  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2, A-K3, A-K4)  
Dynamic**  
Impedance  
Zz ()  
Reverse  
Leakage  
IR (µA)  
Breakdown Voltage*  
Capacitance  
Ct (pF)  
E.S.D Voltage  
(KV)  
VBR (V)  
Parameter  
Test  
Test  
MIN.  
MAX.  
IT (mA)  
MAX.  
IT (mA)  
MAX.  
VR (V)  
TYP.  
MIN.  
Condition  
Condition  
NNCD3.3G  
NNCD3.6G  
NNCD3.9G  
NNCD4.3G  
NNCD4.7G  
NNCD5.1G  
NNCD5.6G  
NNCD6.2G  
NNCD6.8G  
NNCD7.5G  
NNCD27G  
3.10  
3.40  
3.70  
4.01  
4.42  
4.84  
5.31  
5.86  
6.47  
7.06  
25.10  
3.50  
3.80  
4.10  
4.48  
4.90  
5.37  
5.92  
6.53  
7.14  
7.84  
28.90  
5
5
5
5
5
5
5
5
5
5
2
130  
130  
130  
130  
130  
130  
80  
5
5
5
5
5
5
5
5
5
5
2
20  
10  
10  
10  
10  
5
1.0  
1.0  
1.0  
1.0  
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
21  
220  
210  
200  
180  
170  
160  
140  
120  
110  
90  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
C = 150 pF  
R = 330  
(IEC1000  
-4-2)  
VR = 0 V  
f = 1 MHz  
5
50  
2
30  
2
30  
2
70  
2
25  
*
Tested with pulse (40 ms)  
** Zz is measured at IT give a small A.C. signal.  
2
NNCD3.3G to NNCD7.5G, NNCD27G  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
Fig. 2  
I - VBR CHARACTERISTICS  
(A-K1, A-K2, A-K3, A-K4)  
t
Fig. 1 P - T RATING  
A
250  
200  
150  
100  
50  
NNCD6.8G  
NNCD7.5G  
100 m  
10 m  
1 m  
NNCD3.3G  
NNCD3.6G  
NNCD3.9G  
100 µ  
10 µ  
1 µ  
0
25  
50  
75  
100  
125  
150  
100 n  
T
A
- Ambient Temperature - ˚C  
NNCD4.3G  
NNCD4.7G  
NNCD5.1G  
NNCD5.6G  
10 n  
NNCD6.2G  
1 n  
0
1
2
3
4
5
6
7
8
9
10  
VBR - Breakdown Voltage - V  
Fig. 3 Z  
T
- I  
T
CHARACTERISTICS  
NNCD3.9G  
1 000  
TYP.  
100  
10  
1
NNCD5.6G  
NNCD4.7G  
NNCD5.1G  
NNCD7.5G  
0.1  
1
10  
100  
IT  
- On state Current - A  
3
NNCD3.3G to NNCD7.5G, NNCD27G  
Fig. 4 TRANSIENT THERMAL IMPEDANCE  
1 000  
100  
10  
625 ˚C/W  
NNCD [ ] G  
1
0.1  
1 m  
10 m  
100 m  
1
t - Time - Sec  
10  
100  
Fig. 5 SURGE REVERSE POWER RATING  
10 000  
1 000  
100  
T
A
= 25 ˚C  
Non-Repetive  
t
T
NNCD [ ] G  
10  
1
1 µ  
10 µ  
100 µ  
1 m  
10 m  
100 m  
t
T
- Pulse Width - Sec  
4
NNCD3.3G to NNCD7.5G, NNCD27G  
Sample Application Circuits  
* Set  
Conecter  
Micro  
com.  
PC  
(CD ROM)  
Palallel  
Interface  
Di  
Di  
Imterface Cable  
* Set  
Printer, P.D.C, T.V Game etc  
5
NNCD3.3G to NNCD7.5G, NNCD27G  
REFERENCE  
Document Name  
Document No.  
C11745E  
NEC semiconductor device reliability/quality control system  
NEC semiconductor device reliability/quality control system  
Quality grade on NEC semiconductor devices  
MEI-1201  
C11531E  
Semiconductor device mounting technology manual  
C10535E  
Guide to quality assurance for semiconductor device  
MEI-1202  
6
NNCD3.3G to NNCD7.5G, NNCD27G  
[MEMO]  
7
NNCD3.3G to NNCD7.5G, NNCD27G  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  

相关型号:

NNCD3.3G-A

85W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, PLASTIC, SC-74A, 5 PIN
RENESAS

NNCD3.6A

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE
NEC

NNCD3.6A-AZ

100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
RENESAS

NNCD3.6B

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE
NEC

NNCD3.6B-AZ

100W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-35
RENESAS

NNCD3.6C

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE
NEC

NNCD3.6C-T1-AT

NNCD3.6C-T1-AT
RENESAS

NNCD3.6C-T2

UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
RENESAS

NNCD3.6C-T2

UNIDIRECTIONAL, SILICON, TVS DIODE, ULTRA SUPER MINIMOLD PACKAGE-2
NEC

NNCD3.6C-T2-A

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
RENESAS

NNCD3.6C-T2-AT

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,UMD2VAR
RENESAS

NNCD3.6D

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
NEC