NNCD5.6LH-A [NEC]
Trans Voltage Suppressor Diode, 2W, Unidirectional, 4 Element, Silicon, SO-5;型号: | NNCD5.6LH-A |
厂家: | NEC |
描述: | Trans Voltage Suppressor Diode, 2W, Unidirectional, 4 Element, Silicon, SO-5 局域网 光电二极管 |
文件: | 总8页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LHtoNNCD6.8LH
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN SUPER SMALL MINI MOLD
PACKAGE DIMENSIONS
Thisproductseriesisalowcapacitancetypediodedeveloped
for ESD (Electrostatic Discharge) absorption. Based on the
IEC1000-4-2 test on electromagnetic interference (EMI), the
diodeassuresanenduranceofnolessthan8kV,andcapacitance
is small with 10 pF between the terminal. This product series is
the most suitable for the ESD absorption in the high-speed data
communication bus such as USB.
(in millimeters)
2.1 ± 0.1
1.25
1
2
3
5
4
With four elements mounted in the 5-pin super mini mold
package,thatproductcancopewithmorehighdensityassembling.
FEATURES
•
Based on the electrostatic discharge immunity test (IEC1000-
4-2), the product assures the minimum endurance of 8 kV.
Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz)
between the terminal. It is excellent in the frequency
characteristic.
•
•
With 4 elements mounted (common anode) in the 5-pin super
mini mold package, that product can cope with more high
density assembling.
(5-pin super mini mold)
PIN CONNECTION
APPLICATIONS
•
External interface circuit ESD absorption in the high-speed
data communication bus such as USB.
5
4
1: K1 Cathode 1
2: Anode (Common)
A
3: K2 Cathode 2
4: K3 Cathode3
5: K4 Cathode4
1
2
3
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P
200 mW
(Total)
Fig.5
Surge Reverse Power
Junction Temperature
Storage Temperature
PRSM
Tj
2W (t = 10 µs, 1 pulse)
150°C
Tstg
–55°C to +150°C
Document No. D12786EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
1998
©
NNCD5.6LH to NNCD6.8LH
ELECTRICAL CHARACTERISTICS (TA = 25 °C) (A-K1, A-K2, A-K3, A-K4)
Note 2
Dynamic
Reverse
Leakage
IR (µA)
Note 1
Note 3
Breakdown Voltage
VBR (V)
Capacitance
Ct (pF)
ESD Voltage
(kV)
Impedance
Type No
Zz (Ω)
MIN.
5.3
MAX. IT (mA) MAX. IT (mA) MAX.
VR (V)
2.5
TYP. Test Condition MIN. Test Condition
NNCD5.6LH
NNCD6.2LH
NNCD6.8LH
6.3
6.7
7.1
5
5
5
80
50
30
5
5
5
5
2
2
10
8
VR = 0 V
8
8
8
C = 150 pF
R = 330 Ω
Contact
f = 1 MHz
5.7
3.0
6.2
3.5
7
discharge
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT given a small A.C. signal.
3. ESD voltage is measured based on the IEC1000-4-2 test on electromagnetic interference (EMI).
2
NNCD5.6LH to NNCD6.8LH
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. P - TA RATING
Figure 2. It - VBR CHARACTERISTICS
(A - K1, A - K2, A - K3, A - K4)
250
200
150
100
50
NNCD5.6LH NNCD6.2LH NNCD6.8LH
10 m
1 m
100
10
0
0
25
T
50
75
100
125
150
A
- Ambient Temperature - °C
1
100 n
10 n
4
5
6
7
8
VBR - Breakdown Voltage - V
Figure 3. Ct - VR CHARACTERISTICS
10.0
8.0
6.0
4.0
f = 1 MHz
NNCD5.6LH
NNCD6.2LH
NNCD6.8LH
0.1
1.0
10
VR - Reverse Voltage - V
3
NNCD5.6LH to NNCD6.8LH
Figure 4. TRANSIENT THERMAL IMPEDANCE
1000
100
10
625°C/W
NNCD [ ] LH
1
0.1
1 m
10 m
100 m
1
10
100
t - Time - s
Figure 5. SURGE REVERSE POWER RATING
1000
100
10
T
A
= 25°C
Nom - Repetive
tT
NNCD [ ] LH
1
0.1
1µ
10 µ
100 µ
1 m
- Pulse Width - s
10 m
100 m
t
T
4
NNCD5.6LH to NNCD6.8LH
REFERENCE
Document
Document No.
C11745E
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
MEI - 1201
C11531E
Semiconductor device mounting technology manual
C10535E
5
NNCD5.6LH to NNCD6.8LH
[MEMO]
6
NNCD5.6LH to NNCD6.8LH
[MEMO]
7
NNCD5.6LH to NNCD6.8LH
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
相关型号:
NNCD5.6MG
LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD
NEC
NNCD5.6MG-A
Trans Voltage Suppressor Diode, 2W, Unidirectional, 4 Element, Silicon, PLASTIC, SC-74A, 5 PIN
NEC
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