NP109N055PUJ-E1B-AY [NEC]
Power Field-Effect Transistor, 110A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZP, TO-263, 3 PIN;型号: | NP109N055PUJ-E1B-AY |
厂家: | NEC |
描述: | Power Field-Effect Transistor, 110A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZP, TO-263, 3 PIN 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP109N055PUJ-E1B-AY Note
NP109N055PUJ-E2B-AY Note
Tape 1000 p/reel
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Super low on-state resistance
RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
(TO-263)
Ciss = 6900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
55
20
V
V
110
A
440
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
220
W
W
°C
°C
mJ
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
291
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
EAS
IAR
54
EAR
291
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.68
83.3
°C/W
°C/W
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19729EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
NP109N055PUJ
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
VDS = 55 V, VGS = 0 V
MIN. TYP. MAX. UNIT
IDSS
1
μA
nA
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 55 A
VGS = 10 V, ID = 55 A
VDS = 25 V,
100
Gate to Source Threshold Voltage
2.0
45
3.0
101
2.5
4.0
V
S
Note
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Input Capacitance
3.2
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
6900 10350
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V,
760
290
40
1140
530
90
f = 1 MHz
td(on)
tr
VDD = 28 V, ID = 55 A,
VGS = 10 V,
20
50
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
90
180
30
10
Total Gate Charge
QG
VDD = 44 V,
115
26
180
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V,
ID = 110 A
38
Note
Body Diode Forward Voltage
IF = 110 A, VGS = 0 V
IF = 110 A, VGS = 0 V,
di/dt = 100 A/μs
0.9
57
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
ns
nC
Qrr
115
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
R
L
50 Ω
PG.
V
DD
2
Data Sheet D19729EJ1V0DS
NP109N055PUJ
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
DC
R
DS(on) Limited
(VGS = 10 V)
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 0.68°C/W
1
0.1
0.01
Single Pulse
100 1000
0.001
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D19729EJ1V0DS
NP109N055PUJ
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0
1000
100
10
T
A
= −55°C
25°C
85°C
150°C
175°C
1
0.1
0.01
0.001
V
GS = 10 V
V
DS = 10 V
Pulsed
Pulsed
0
0.4
0.8
1.2
1.6
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3
2
1
1000
100
10
T
A
= −55°C
25°C
85°C
150°C
175°C
VDS = VGS
VDS = 5 V
I
D
= 250 μA
Pulsed
1
0
1
10
100
1000
-100
-50
0
50
100
150
200
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
6
VGS = 10 V
I
D
= 55 A
Pulsed
5
Pulsed
5
4
3
2
1
0
4
3
2
1
0
1
10
100
1000
0
5
10
15
20
25
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D19729EJ1V0DS
NP109N055PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
6
5
4
3
2
100000
10000
1000
C
iss
C
oss
C
rss
VGS = 10 V
1
0
I
D
= 55 A
V
GS = 0 V
Pulsed
f = 1 MHz
100
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
60
12
10
8
50
40
30
20
10
0
V
DD = 44 V
28 V
11 V
100
10
1
t
d(off)
t
t
t
d(on)
6
r
f
V
GS
4
V
DD = 28 V
V
DS
2
VGS = 10 V
D
I = 110 A
R = 0 Ω
G
0
0.1
1
10
100
1000
0
20
40
60
80 100 120 140
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
100
10
1
0 V
V
GS = 10 V
di/dt = 100 A/μs
V
GS = 0 V
Pulsed
1.5
0.1
1
0
0.5
1
0.1
1
10
100
1000
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D19729EJ1V0DS
NP109N055PUJ
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 0.ꢀ
4.45 0.2
No plating
7.88 MIN.
4
1.ꢀ 0.2
0.025
to 0.25
0.5
0.75 0.2
2.54
0.25
1
2
ꢀ
1. Gate
2. Drain
ꢀ. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19729EJ1V0DS
NP109N055PUJ
TAPE INFORMATION
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
−
−
MARKING INFORMATION
NEC
Pb-free plating marking
Abbreviation of part number
109N055
UJ
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP109N055PUJ should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet D19729EJ1V0DS
NP109N055PUJ
•
The information in this document is current as of April, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E 02. 11-1
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