NP180N04TUG-E2-AY [NEC]
Power Field-Effect Transistor, 180A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MP-25ZT, TO-263, 7 PIN;
| 型号： | NP180N04TUG-E2-AY |
| 厂家： | 
NEC |
| 描述： | Power Field-Effect Transistor, 180A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MP-25ZT, TO-263, 7 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP180N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP180N04TUG-E1-AY Note
NP180N04TUG-E2-AY Note
Tape
TO-263-7pin (MP-25ZT)
typ. 1.5 g
800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
(TO-263-7pin)
• Super low on-state resistance
RDS(on) = 1.2 mΩ TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)
• High Current Rating
ID(DC) = 180 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
40
20
V
V
180
A
720
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
288
W
W
°C
°C
mJ
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
518
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
EAS
IAR
72
EAR
518
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
0.52
83.3
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18896EJ1V0DS00 (1st edition)
Date Published September 2007 NS
Printed in Japan
2007
NP180N04TUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
1
UNIT
μA
nA
V
IDSS
VDS = 40 V, VGS = 0 V
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 90 A
VDS = 25 V,
100
4.0
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
2.0
51
3.0
107
1.2
S
1.5
mΩ
pF
pF
pF
ns
17100 25700
Output Capacitance
Coss
Crss
VGS = 0 V,
1420
890
54
2130
1610
120
110
210
60
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
VDD = 20 V, ID = 90 A,
VGS = 10 V,
Rise Time
43
ns
Turn-off Delay Time
td(off)
tf
RG = 0 Ω
104
21
ns
Fall Time
ns
Total Gate Charge
QG
VDD = 32 V,
260
52
390
nC
nC
nC
V
Gate to Source Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V,
Gate to Drain Charge
ID = 180 A
88
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
IF = 180 A, VGS = 0 V
IF = 180 A, VGS = 0 V,
di/dt = 100 A/μs
0.9
65
1.5
ns
Qrr
110
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
RG
= 25 Ω
50 Ω
R
L
90%
90%
V
GS
Wave Form
V
GS
10%
90%
0
R
G
PG.
VDD
PG.
GS = 20 → 0 V
VDD
V
DS
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
VDD
2
Data Sheet D18896EJ1V0DS
NP180N04TUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
1000
100
10
I
D(pulse)
I
D(DC)
DC
T
C
= 25°C
Single Pulse
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/Wi
1
Rth(ch-C) = 0.52°C/Wi
0.1
0.01
Single Pulse
100 1000
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D18896EJ1V0DS
NP180N04TUG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
800
700
600
500
400
300
200
100
0
1000
100
10
T
ch = −55°C
25°C
75°C
150°C
175°C
1
0.1
V
GS = 10 V
0.01
0.001
V
DS = 10 V
Pulsed
Pulsed
1
2
3
4
5
6
0
0.5
1
1.5
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
1000
100
10
3.5
3
T
ch = −55°C
25°C
75°C
2.5
2
1.5
1
150°C
175°C
V
DS = VGS
= 250 μA
V
DS = 5 V
0.5
0
I
D
Pulsed
1
-75
-25
25
75
125
175
225
0.1
1
10
100
1000
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
10
ID = 90 A
V
GS = 10 V
Pulsed
Pulsed
4
3
2
1
0
8
6
4
2
0
1
10
100
1000
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18896EJ1V0DS
NP180N04TUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
100000
10000
1000
V
GS = 10 V
= 90 A
I
D
C
iss
4
3
2
1
0
C
oss
rss
C
V
GS = 0 V
Pulsed
175
f = 1 MHz
100
-75
-25
25
75
125
225
0.1
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
1000
100
10
12
9
35
30
25
20
15
10
5
V
DD = 32 V
20 V
t
d(off)
8 V (160 A)
t
d(on)
6
V
GS
t
r
t
f
3
V
V
DD = 20 V
GS = 10 V
R = 0 Ω
V
DS
ID = 180 A
G
1
0
0
0.1
1
10
100
1000
0
40
80 120 160 200 240 280
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1000
V
GS = 10 V
0 V
100
10
1
di/dt = 100 A/μs
Pulsed
1.5
V
GS = 0 V
1
0
0.5
1
0.1
1
10
100
1000
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D18896EJ1V0DS
NP180N04TUG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
10.0 0.2
4.45 0.2
8.4 TYP.
1.3 0.2
8
0.025 to 0.25
1.27 TYP.
0.6 0.15
1 2 3 4 5 6 7
10.0 0.2
0.25
1. Gata
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18896EJ1V0DS
NP180N04TUG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
180N04
UG
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP180N04TUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet D18896EJ1V0DS
NP180N04TUG
•
The information in this document is current as of September, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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M8E 02. 11-1
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