NP82N04PDG-E1-AY [NEC]
Power Field-Effect Transistor, 82A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZP, 3 PIN;型号: | NP82N04PDG-E1-AY |
厂家: | NEC |
描述: | Power Field-Effect Transistor, 82A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZP, 3 PIN 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N04PDG-E1-AY
NP82N04PDG-E2-AY
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
Tape
TO-263 (MP-25ZP)
typ. 1.5 g
800 p/reel
FEATURES
• Super low on-state resistance
(TO-263)
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
40
20
V
V
82
A
328
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
143
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Repetitive Avalanche Current Note2
Tstg
−55 to +175
43
IAR
Repetitive Avalanche Energy Note2
EAR
185
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
1.05
83.3
°C/W
°C/W
Rth(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
NP82N04PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 40 V, VGS = 0 V
1
μA
nA
IGSS
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 41 A
VGS = 10 V, ID = 41 A
VGS = 4.5 V, ID = 41 A
VDS = 25 V
100
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
VGS(th)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.4
20
1.8
47
2.5
V
S
2.9
4.1
3.5
8.0
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
6000 9000
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
580
370
26
870
670
60
f = 1 MHz
td(on)
tr
VDD = 20 V, ID = 41 A
VGS = 10 V
68
170
150
30
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 0 Ω
73
11
Total Gate Charge
QG
VDD = 32 V
100
19
150
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 82 A
32
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V
di/dt = 100 A/μs
0.9
43
1.5
ns
nC
Qrr
47
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
VGS
10%
90%
R
G
PG.
VDD
PG.
GS = 20 → 0 V
VDD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
VDD
2
Data Sheet D18396EJ1V0DS
NP82N04PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
100
80
60
40
20
0
60
40
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R
DS(on) Limited
I
D(Pulse)
100 μs
(at VGS = 10 V)
I
D(DC)
1 ms
10 ms
DC
1
Power Dissipation Limited
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3 °C/W
1
R
th(ch-C) = 1.05 °C/W
0.1
0.01
Single pulse
100 1000
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D18396EJ1V0DS
NP82N04PDG
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
400
300
200
100
0
1000
100
10
V
DS = 10 V
Pulsed
VGS = 10 V
T
A
= 85°C
125°C
150°C
175°C
1
4.5 V
−55°C
−25°C
25°C
0.1
0.01
0.001
Pulsed
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
2.5
V
DS = 10 V
Pulsed
2.0
1.5
1.0
0.5
0.0
125°C
150°C
175°C
T
A
= −55°C
−25°C
25°C
85°C
V
DS = VGS
= 250 μA
I
D
0.1
0.1
1
10
100
-100
0
100
200
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
7
7
Pulsed
I
D
= 82 A
41 A
6
5
6
5
4
3
2
1
0
V
GS = 4.5 V
4
3
2
1
0
10 V
16.4 A
Pulsed
1
10
100
1000
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18396EJ1V0DS
NP82N04PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
8
ID = 41 A
Pulsed
7
Ciss
6
VGS = 4.5 V
5
4
1000
Coss
10 V
3
2
1
0
Crss
V
GS = 0 V
f = 1 MHz
100
-100
-50
0
50
100
150
200
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
1000
100
10
40
30
20
10
0
V
DD = 32 V
20 V
10
8
8 V
t
t
d(off)
d(on)
6
t
r
V
GS
4
t
f
V
V
DD = 20 V
GS = 10 V
2
V
DS
G
R = 0 Ω
I
D
= 82 A
100
1
0
0.1
1
10
100
0
20
40
60
80
120
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
VGS = 10 V
100
10
4.5 V
0 V
1
0.1
0.01
di/dt = 100 A/μs
GS = 0 V
Pulsed
V
10
0
0.5
1
1.5
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D18396EJ1V0DS
NP82N04PDG
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.0 ±0.3
4.45 ±0.2
No plating
7.88 MIN.
4
1.3 ±0.2
0.025
to 0.25
0.5
0.75 ±0.2
2.54
0.25
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18396EJ1V0DS
NP82N04PDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
Pb-free plating marking
Abbreviation of part number
82N04
DG
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP82N04PDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Recommended
Soldering Method
Infrared reflow
Soldering Conditions
Condition Symbol
IR60-00-3
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Partial heating
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
7
Data Sheet D18396EJ1V0DS
NP82N04PDG
•
The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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•
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•
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M8E 02. 11-1
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