NX6506GH-A
更新时间：2024-09-18 15:05:14
品牌：NEC
描述：DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE-3
概述
规格参数
数据手册NX6506GH-A 概述
DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE-3 光纤发射器
NX6506GH-A 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 包装说明： | CAN PACKAGE-3 | Reach Compliance Code： | compliant |
| 风险等级： | 5.79 | 主体高度： | 5.17 mm |
| 主体长度或直径： | 4.3 mm | 通信标准： | GBE, ITU-T, STM-1, STM-4 |
| 数据速率： | 1250 Mbps | 最长下降时间： | 0.15 ns |
| 光纤设备类型： | DFB LASER DIODE EMITTER | 安装特点： | THROUGH HOLE MOUNT |
| 信道数量： | 1 | 最高工作温度： | 85 °C |
| 最低工作温度： | -20 °C | 最大工作波长： | 1570 nm |
| 最小工作波长： | 1530 nm | 标称工作波长： | 1550 nm |
| 上升时间： | 0.1 ns | 电源电流： | 0.6 mA |
| 最大供电电压： | 1.6 V | 标称供电电压： | 1.1 V |
| 表面贴装： | NO | 最小阈值电流： | 10 mA |
| Base Number Matches： | 1 |
NX6506GH-A 数据手册
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PDF下载PRELIMINARY DATA SHEET
LASER DIODE
NX6506 Series
1 550 nm InGaAsP MQW-DFB LASER DIODE
FOR 622 Mb/s, 1.25 Gb/s
DESCRIPTION
The NX6506 Series is a 1 550 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-
PD.
APPLICATIONS
•
•
•
STM-1, STM-4, ITU-T recommendations
FTTH PON (Fiber To The Home Passive Optical Network)
1.25 Gb/s: Gigabit Ethernet
FEATURES
•
•
•
•
•
•
•
•
Optical output power
Low threshold current
Differential efficiency
Side mode suppression ratio
Wide operating temperature range
InGaAs monitor PIN-PD
CAN package
Po = 5.0 mW
lth = 10 mA
ηd = 0.25 W/A
SMSR = 40 dB
TC = −20 to +85°C
φ 5.6 mm
Focal point
7.5 mm
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10496EJ01V0DS (1st edition)
Date Published June 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
NX6506 Series
PACKAGE DIMENSIONS (UNIT: mm)
5.6+0.00
φ
–0.03
φ
4.3 0.1
φ
3.75 0.05
1.0 0.1
BOTTOM VIEW
1
2
4
3
+0.1
–0.0
0.3
Focal Point
PIN CONNECTIONS
NX6506GH
NX6506GK
1 (CASE)
1 (CASE)
LD
LD
2
4
2
4
PD
PD
φ
4– 0.45
3
3
φ
2.0
P.C.D
2
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
ORDERING INFORMATION
Part Number
Package
4-pin CAN with aspherical lens cap
Pin Connections
1
NX6506GH
LD
4
2
PD
3
1
NX6506GK
LD
2
4
PD
3
Remark The hermetic test will be performed as AQL 1.0%.
3
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Optical Output Power
Symbol
Ratings
10
Unit
mW
mA
V
Po
IF
Forward Current of LD
150
Reverse Voltage of LD
VR
IF
2.0
Forward Current of PD
2.0
mA
V
Reverse Voltage of PD
VR
TC
Tstg
Tsld
RH
15
Operating Case Temperature
Storage Temperature
−20 to +85
−40 to +85
350 (3 sec.)
85
°C
°C
°C
%
Lead Soldering Temperature
Relative Humidity (noncondensing)
ELECTRO-OPTICAL CHARACTERISTICS (TC = −20 to +85°C, unless otherwise specified)
Parameter
Optical Output Power
Symbol
Po
Conditions
MIN.
TYP.
5.0
1.1
10
MAX.
Unit
mW
V
CW
Operating Voltage
Threshold Current
Vop
Po = 5.0 mW
TC = 25°C
1.6
20
50
Ith
mA
Differential Efficiency
ηd
Po = 5.0 mW, TC = 25°C
0.18
0.10
−3.0
0.25
W/A
dB
Po = 5.0 mW
ηd (@ 85°C)
∆ηd = 10 log
Temperature Dependence of
Differential Efficiency
∆ηd
−1.6
ηd (@ 25°C)
Peak Emission Wavelength
Side Mode Suppression Ratio
Rise Time
λp
CW, Po = 5.0 mW
1 530
30
1 570
nm
dB
ps
SMSR Po = 5.0 mW
40
tr
tf
Ib = Ith, 20-80%
100
150
2 000
10
Fall Time
Ib = Ith, 80-20%
ps
Monitor Current
Im
ID
VR = 1.5 V, Po = 5.0 mW
VR = 1.5 V, TC = 25°C
VR = 1.5 V
200
600
0.1
10
µA
nA
Monitor Dark Current
100
4
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
REFERENCE
Document Name
Document No.
PL10161E
OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE
Opto-Electronics Devices Pamphlet
PX10160E
5
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
•
The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Preliminary Data Sheet PL10496EJ01V0DS
NX6506 Series
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
OUTPUT POWER
WAVELENGTH
mW MAX
nm
Laser Radiation is emitted from
this aperture
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Warning Laser Beam
Caution GaAs Products
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0406
NX6506GH-A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| NX6506GH-AZ | CEL | NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS | 获取价格 |
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| NX6506GK | NEC | DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE-3 | 获取价格 |
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| NX6506GK-AZ | CEL | NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS | 获取价格 |
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| NX6508 | CEL | NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS | 获取价格 |
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| NX6508-AZ | CEL | NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS | 获取价格 |
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| NX6508GH47-A | NEC | DFB Laser Diode Emitter, 1468nm Min, 1472nm Max, 2500Mbps, Through Hole Mount, CAN PACKAGE-4 | 获取价格 |
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| NX6508GH47-AZ | RENESAS | LASER DIODE W/MONITOR,1.47UM PEAK WAVELENGTH,CAN-5.6 | 获取价格 |
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| NX6508GH49 | NEC | DFB Laser Diode Emitter, 1488nm Min, 1492nm Max, 2500Mbps, Through Hole Mount, CAN PACKAGE-4 | 获取价格 |
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| NX6508GH49-A | NEC | DFB Laser Diode Emitter, 1488nm Min, 1492nm Max, 2500Mbps, Through Hole Mount, CAN PACKAGE-4 | 获取价格 |
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| NX6508GH49-AZ | RENESAS | LASER DIODE W/MONITOR,1.49UM PEAK WAVELENGTH,CAN-5.6 | 获取价格 |
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