NX8530NH477 [NEC]
Laser Diode Module Emitter, 2500Mbps, Through Hole Mount, CERAMIC PACKAGE-9;型号: | NX8530NH477 |
厂家: | NEC |
描述: | Laser Diode Module Emitter, 2500Mbps, Through Hole Mount, CERAMIC PACKAGE-9 光纤 |
文件: | 总10页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
LASER DIODE
NX8530NH,NX8531NH
1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE
2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS
DESCRIPTION
The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells
(MQW) structured Distributed Feed-Back (DFB) laser diode module TOSA
integrated a mini-TEC, with InGaAs monitor PIN-PD in a ceramic package
designed for SFP transceivers and other types of modules with LC receptacle.
FEATURES
•
Optical output power
PAVG = 0 dBm MIN. (NX8530NH)
PAVG = 4 dBm MIN. (NX8531NH)
•
Available for DWDM C-band and L-band wavelengths based on
ITU-T recommendations
(100 GHz grid, please refer to the ORDERING INFORMATION)
Built-in mini thermo-electric cooler with low power consumption
Miniature 18.5 mm package with LC receptacle
•
•
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10716EJ01V0DS (1st edition)
Date Published June 2008 NS
Printed in Japan
2008
NX8530NH, NX8531NH
PACKAGE DIMENSIONS (UNIT: mm)
18.5 MAX.
2.1
6.8
6.995
1.85
0.6
0.55 0.05
1.1 0.05
φ
#1
φ
#9
4.045 0.05
>5.0
φ
OPTICAL
φ
REFERENCE
PLANE
PIN CONNECTIONS
Pin No.
Function
1
2
3
4
5
6
7
8
9
Thermistor
Thermistor
LD Bias, LD Cathode
PD Anode
RF GND, LD Anode, PD Cathode
DATA, LD Cathode
RF GND, LD Anode, PD Cathode
TEC (+)
TEC (–)
2
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
ORDERING INFORMATION
NX8530NH
NX8531NH
Wavelength Code : Refer to Table A
Table A: DWDM wavelength based on ITU-T recommendations (@TLD = Tset) (1/2)
Wavelength Code
ITU-T Wavelength*1
(nm)
Frequency
(THz)
Wavelength Code
ITU-T Wavelength*1
(nm)
Frequency
(THz)
279
287
295
303
311
318
326
334
342
350
358
366
373
381
389
397
405
413
421
429
437
445
453
461
469
477
1 527.99
1 528.77
1 529.55
1 530.33
1 531.12
1 531.90
1 532.68
1 533.47
1 534.25
1 535.04
1 535.82
1 536.61
1 537.40
1 538.19
1 538.98
1 539.77
1 540.56
1 541.35
1 542.14
1 542.94
1 543.73
1 544.53
1 545.32
1 546.12
1 546.92
1 547.72
196.20
196.10
196.00
195.90
195.80
195.70
195.60
195.50
195.40
195.30
195.20
195.10
195.00
194.90
194.80
194.70
194.60
194.50
194.40
194.30
194.20
194.10
194.00
193.90
193.80
193.70
485
493
501
509
517
525
533
541
549
557
565
573
581
589
597
606
614
622
630
638
646
654
663
671
679
687
1 548.51
1 549.32
1 550.12
1 550.92
1 551.72
1 552.52
1 553.33
1 554.13
1 554.94
1 555.75
1 556.55
1 557.36
1 558.17
1 558.98
1 559.79
1 560.61
1 561.42
1 562.23
1 563.05
1 563.86
1 564.68
1 565.50
1 566.31
1 567.13
1 567.95
1 568.77
193.60
193.50
193.40
193.30
193.20
193.10
193.00
192.90
192.80
192.70
192.60
192.50
192.40
192.30
192.20
192.10
192.00
191.90
191.80
191.70
191.60
191.50
191.40
191.30
191.20
191.10
*1 The value which omitted and computed the 3rd place below the decimal point
3
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
Table A: DWDM wavelength based on ITU-T recommendations (@TLD = Tset) (2/2)
Wavelength Code
ITU-T Wavelength*1
(nm)
Frequency
(THz)
Wavelength Code
ITU-T Wavelength*1
(nm)
Frequency
(THz)
695
704
712
720
728
737
745
753
761
770
778
786
795
803
811
820
828
836
845
853
862
870
878
887
895
1 569.59
1 570.42
1 571.24
1 572.06
1 572.89
1 573.71
1 574.54
1 575.37
1 576.20
1 577.03
1 577.86
1 578.69
1 579.52
1 580.35
1 581.18
1 582.02
1 582.85
1 583.69
1 584.53
1 585.36
1 586.20
1 587.04
1 587.88
1 588.73
1 589.57
191.00
190.90
190.80
190.70
190.60
190.50
190.40
190.30
190.20
190.10
190.00
189.90
189.80
189.70
189.60
189.50
189.40
189.30
189.20
189.10
189.00
188.90
188.80
188.70
188.60
904
912
1 590.41
1 591.26
1 592.10
1 592.95
1 593.79
1 594.64
1 595.49
1 596.34
1 597.19
1 598.04
1 598.89
1 599.75
1 600.60
1 601.46
1 602.31
1 603.17
1 604.03
1 604.88
1 605.74
1 606.60
1 607.47
1 608.33
1 609.19
1 610.06
188.50
188.40
188.30
188.20
188.10
188.00
187.90
187.80
187.70
187.60
187.50
187.40
187.30
187.20
187.10
187.00
186.90
186.80
186.70
186.60
186.50
186.40
186.30
186.20
921
929
937
946
954
963
971
980
988
997
6006
6014
6023
6031
6040
6048
6057
6066
6074
6083
6091
6100
*1 The value which omitted and computed the 3rd place below the decimal point
4
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
ABSOLUTE MAXIMUM RATINGS
Parameter
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Cooler Current
Symbol
Ratings
300
Unit
mA
V
IFLD
VRLD
IFPD
VRPD
TC
2.0
2.0
mA
V
20
−5 to +75
−40 to +85
350 (3 sec.)
0.9
°C
°C
°C
A
Tstg
Tsld
IC
Cooler Voltage
VC
1.8
V
5
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = −5 to +75°C, BOL)
Parameter
Laser Set Temperature
Operating Voltage
Symbol
Tset
Conditions
MIN.
35
0.9
5
TYP.
20
MAX.
50
Unit
°C
Vop
2.0
40
V
Threshold Current
Ith
mA
dBm
Optical Output Power (average)
PAVG
IF = Iop, TLD = Tset (NX8530NH)
IF = Iop, TLD = Tset (NX8531NH)
0
4
4
7
Operating Current
Threshold Output Power
Slope Efficiency
Iop
Pth
η
100
100
mA
μW
IF = Ith
CW (NX8530NH)
CW (NX8531NH)
Pf = 10 mW, CW, TLD = Tset
0.04
0.08
1 528
1 564
30
0.1
0.18
W/A
Peak Emission Wavelength
λp
ITU-T*1
1 563
1 610
nm
Side Mode Suppression Ratio
Relative Intensity Noise
Rise Time
SMSR
CW, IF = Iop
35
dB
dB/Hz
ps
RIN
tr
CW, IF = Iop, f = 20 MHz to 3 GHz
20-80%, TC = 25°C
80-20%, TC = 25°C
f = 50 MHz to 3 GHz
f = 3 GHz to 5 GHz
−3 dB, IF = Iop
−140
120
Fall Time
tf
120
ps
Electrical Input Return Loss
S11
6
3
dB
Band Width
BW
DP
2.5
GHz
dB
Dispersion Penalty
TC = 25°C*2
2.0
*1 Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, please refer to the ORDERING INFORMATION)
*2 2.48832 Gb/s, PRBS 223−1, NRZ, Extinction Ratio ≥ 9.0 dB, 2 400 ps/nm
6
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: TLD = Tset, TC = −5 to +75°C)
Parameter
Monitor Current
Symbol
Conditions
Pf = 5 mW (NX8530NH)
Pf = 10 mW (NX8531NH)
VR = 5 V
MIN.
0.08
TYP.
MAX.
2.0
Unit
mA
Im
Dark Current
ID
100
1.0
nA
dB
γ*1
Tracking Error
Im = const.
−1.0
Pf1
Pf2
*1 γ = 10 log
P
f
(mW)
T
LD = Tset, T
C
= 25˚C
P
f
f
2
1
T
LD = Tset, T = –5 to +75˚C
C
P
0
I
m
I
m
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TEC: TLD = Tset, TC = −5 to +75°C, BOL)
Parameter
Thermistor Resistance
B Constant
Symbol
Conditions
MIN.
9.5
TYP.
10.0
MAX.
10.5
3 550
0.4
Unit
kΩ
K
R
B
IC
TLD = 25°C
3 350
3 450
Cooler Current
ΔT = 40°C (NX8530NH)
ΔT = 40°C (NX8531NH)
ΔT = 40°C (NX8530NH)
ΔT = 40°C (NX8531NH)
A
0.5
Cooler Voltage
VC
1.0
V
1.5
7
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
REFERENCE
Document Name
Document No.
PX10160E
Opto-Electronics Devices Pamphlet
8
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
•
The information in this document is current as of June, 2008. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
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responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
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M8E 02. 11-1
9
Data Sheet PL10716EJ01V0DS
NX8530NH, NX8531NH
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
OUTPUT POWER
WAVELENGTH
mW MAX
nm
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Warning Laser Beam
Caution GaAs Products
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
A glass-fiber is attached on the product. Handle with care.
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
Caution Optical Fiber
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