PS2501L-2 [NEC]

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES; 高隔离电压单晶体管型多光耦合器系列
PS2501L-2
型号: PS2501L-2
厂家: NEC    NEC
描述:

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
高隔离电压单晶体管型多光耦合器系列

晶体 光电 晶体管 分离技术 隔离技术
文件: 总12页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
PHOTOCOUPLER  
PS2501-1,-2,-4, PS2501L-1,-2,-4  
HIGH ISOLATION VOLTAGE  
SINGLE TRANSISTOR TYPE  
MULTI PHOTOCOUPLER SERIES  
NEPOCTM Series−  
DESCRIPTION  
The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode  
and an NPN silicon phototransistor.  
The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type  
(Gull-wing) for surface mount.  
FEATURES  
High isolation voltage (BV = 5 000 Vr.m.s.)  
High collector to emitter voltage (VCEO = 80 V)  
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)  
Ordering number of taping product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4  
UL approved: File No. E72422 (S)  
APPLICATIONS  
Power supply  
Telephone/FAX.  
FA/OA equipment  
Programmable logic controller  
The information in this document is subject to change without notice.  
Document No. P10025EJ7V0DS00 (7th edition)  
Date Published April 1998 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1988  
©
PS2501-1,-2,-4,PS2501L-1,-2,-4  
PACKAGE DIMENSIONS (in millimeters)  
DIP Type  
PS2501-4 (New Package)  
PS2501-1 (New Package)  
TOP VIEW  
TOP VIEW  
16 15 14  
3
13 12 11  
10 9  
4
4.6 ± 0.35  
20.3 MAX.  
2
1
3 4 5 6 7 8  
2
1
1. Anode  
1, 3, 5, 7. Anode  
2, 4, 6, 8. Cathode  
9,11,13,15. Emitter  
10,12,14,16. Collector  
2. Cathode  
3. Emitter  
4. Collector  
7.62  
7.62  
0.50 ± 0.10  
1.25±0.15  
1.25±0.15  
0.50 ± 0.10  
0.25  
0 to 15˚  
0 to 15˚  
M
0.25  
M
2.54  
2.54  
PS2501-1  
PS2501-2  
TOP VIEW  
TOP VIEW  
4
3
8
7 6 5  
10.2 MAX.  
5.1 MAX.  
2
1
1 2 3 4  
1. Anode  
1, 3. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2, 4. Cathode  
5, 7. Emitter  
6, 8. Collector  
7.62  
7.62  
0.50 ± 0.10  
1.25±0.15  
1.25±0.15  
0.50 ± 0.10  
0 to 15˚  
0 to 15˚  
M
0.25  
M
0.25  
2.54  
2.54  
TOP VIEW  
PS2501-4  
12 11 10 9  
16 15 14 13  
20.3 MAX.  
1 2 3 4 5 6 7 8  
1, 3, 5, 7. Anode  
2, 4, 6, 8. Cathode  
9,11,13,15. Emitter  
10,12,14,16. Collector  
7.62  
0.50 ± 0.10  
1.25±0.15  
0 to 15˚  
M
0.25  
2.54  
Caution New package 1-ch, 4-ch only  
2
PS2501-1,-2,-4,PS2501L-1,-2,-4  
Lead Bending Type  
PS2501L-4 (New Package)  
PS2501L-1 (New Package)  
TOP VIEW  
TOP VIEW  
16 15 14  
3
13 12 11  
10 9  
4
4.6 ± 0.35  
20.3 MAX.  
2
1
3 4 5 6 7 8  
2
1
1. Anode  
1, 3, 5, 7. Anode  
2, 4, 6, 8. Cathode  
9,11,13,15. Emitter  
10,12,14,16. Collector  
2. Cathode  
3. Emitter  
4. Collector  
7.62  
7.62  
0.90 ± 0.25  
9.60 ± 0.4  
0.90 ± 0.25  
9.60 ± 0.4  
1.25±0.15  
0.25  
1.25±0.15  
0.25  
M
M
2.54  
2.54  
PS2501L-1  
PS2501L-2  
TOP VIEW  
TOP VIEW  
4
3
8
7 6 5  
10.2 MAX.  
5.1 MAX.  
2
1
1 2 3 4  
1. Anode  
1, 3. Anode  
2. Cathode  
3. Emitter  
4. Collector  
2, 4. Cathode  
5, 7. Emitter  
6, 8. Collector  
7.62  
7.62  
0.90 ± 0.25  
9.60 ± 0.4  
0.90 ± 0.25  
9.60 ± 0.4  
1.25±0.15  
0.25  
1.25±0.15  
0.25  
M
M
2.54  
2.54  
PS2501L-4  
TOP VIEW  
12 11 10 9  
16 15 14 13  
20.3 MAX.  
1 2 3 4 5 6 7 8  
1, 3, 5, 7. Anode  
2, 4, 6, 8. Cathode  
9,11,13,15. Emitter  
10,12,14,16. Collector  
7.62  
0.90 ± 0.25  
9.60 ± 0.4  
1.25±0.15  
0.25  
M
2.54  
Caution New package 1-ch, 4-ch only  
3
PS2501-1,-2,-4,PS2501L-1,-2,-4  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Ratings  
Parameter  
Symbol  
PS2501-1,  
PS2501-2,-4  
PS2501L-2,-4  
Unit  
PS2501L-1  
Diode  
Reverse Voltage  
VR  
IF  
6
V
mA  
Forward Current (DC)  
Power Dissipation Derating  
Power Dissipation  
80  
PD/°C  
PD  
1.5  
1.2  
mW/°C  
mW/ch  
A
150  
120  
Peak Forward Current*1  
IFP  
1
80  
7
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
V
V
50  
mA/ch  
mW/°C  
mW/ch  
Vr.m.s.  
°C  
Power Dissipation Derating  
Power Dissipation  
PC/°C  
PC  
1.5  
1.2  
150  
120  
Isolation Voltage*2  
BV  
5 000  
Operating Ambient Temperature  
Storage Temperature  
TA  
55 to +100  
55 to +150  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
4
PS2501-1,-2,-4,PS2501L-1,-2,-4  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.17  
MAX.  
1.4  
5
Unit  
V
Diode  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
IF = 10 mA  
VR = 5 V  
IR  
µA  
pF  
nA  
Ct  
V = 0 V, f = 1.0 MHz  
VCE = 80 V, IF = 0 mA  
50  
Transistor Collector to Emitter Dark  
Current  
ICEO  
100  
600  
0.3  
Coupled  
Current Transfer Ratio  
CTR  
IF = 5 mA, VCE = 5 V  
IF = 10 mA, IC = 2 mA  
80  
300  
%
V
*1  
(IC/IF)  
Collector Saturation  
Voltage  
VCE (sat)  
Isolation Resistance  
Isolation Capacitance  
Rise Time *2  
RI-O  
CI-O  
tr  
VI-O = 1.0 kVDC  
1011  
V = 0 V, f = 1.0 MHz  
0.5  
3
pF  
µs  
VCC = 10 V, IC = 2 mA, RL = 100 Ω  
Fall Time *2  
tf  
5
*1 CTR rank ( * : only PS2501-1, PS2501L-1)  
K* : 300 to 600 (%)  
*2 Test circuit for switching time  
I
F
L* : 200 to 400 (%)  
Pulse Input  
VCC  
M* :  
D* : 100 to 300 (%)  
H* : 80 to 160 (%)  
80 to 240 (%)  
PW = 100 µs  
Duty Cycle = 1/10  
VOUT  
W* : 130 to 260 (%)  
Q* : 100 to 200 (%)  
50  
RL = 100 Ω  
N :  
80 to 600 (%)  
5
PS2501-1,-2,-4,PS2501L-1,-2,-4  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
150  
100  
150  
100  
50  
PS2501-1  
PS2501-1  
PS2501L-1  
PS2501L-1  
PS2501-2  
PS2501-2  
1.5 mW/˚C  
PS2501L-2  
1.5 mW/˚C  
PS2501L-2  
PS2501-4  
PS2501L-4  
PS2501-4  
PS2501L-4  
50  
0
1.2 mW/˚C  
1.2 mW/˚C  
100  
75  
Ambient Temperature T  
25  
50  
75  
125  
(˚C)  
150  
0
25  
50  
100  
125  
(˚C)  
150  
Ambient Temperature T  
A
A
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
100  
50  
70  
60  
50  
40  
30  
20  
10  
T
A
= +100 ˚C  
+60 ˚C  
+25 ˚C  
10  
5
0 ˚C  
–25 ˚C  
–55 ˚C  
1
0.5  
IF = 5 mA  
0.1  
0
4
8
10  
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
Forward Voltage V (V)  
2
6
F
Collector to Emitter Voltage VCE (V)  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
40  
10 000  
1 000  
100  
10  
V
CE = 80 V  
40 V  
10  
5
24 V  
10 V  
5 V  
IF  
= 1 mA  
1
0.5  
1
0.1  
50  
–25  
0
25  
50  
75  
100  
1.0  
0
0.2  
0.4  
0.6  
0.8  
Ambient Temperature T (˚C)  
A
Collector Saturation Voltage VCE(sat) (V)  
6
PS2501-1,-2,-4,PS2501L-1,-2,-4  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
1.2  
450  
400  
350  
300  
250  
1.0  
0.8  
0.6  
0.4  
0.2  
0
200  
150  
100  
Normalized to 1.0  
at T = 25 ˚C,  
= 5 mA, VCE = 5 V  
A
I
F
50  
0
–50  
–25  
0
25  
50  
75  
100  
0.05 0.1  
0.5  
Forward Current I  
1
5
10  
50  
F
(mA)  
Ambient Temperature T  
A
(˚C)  
SWITCHING TIME vs.  
LOAD RESISTANCE  
SWITCHING TIME vs.  
LOAD RESISTANCE  
50  
10  
1 000  
100  
10  
t
f
I
V
C
= 2 mA,  
I = 5 mA,  
VCC = 5 V,  
CTR = 290 %  
F
t
f
CC = 10 V,  
tr  
CTR = 290 %  
µ
µ
ts  
td  
ts  
1
tr  
t
d
0.1  
10  
1
100  
10 k  
5 k  
50 100  
500  
1 k  
()  
500 1 k  
5 k 10 k  
()  
50 k 100 k  
Load Resistance R  
L
Load Resistance R  
L
FREQUENCY RESPONSE  
LONG TERM CTR DEGRADATION  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
V
F
= 5 mA,  
CE = 5 V  
I = 5 mA (TYP.)  
F
0
–5  
T
A
A
= 25 ˚C  
= 60 ˚C  
–10  
–15  
–20  
100 Ω  
T
RL = 1 kΩ  
300 Ω  
0
103  
Time (Hr)  
102  
104  
105  
0.5  
1
2
5
10 20 50 100200 500  
Frequency f (kHz)  
Remark The graphs indicate nominal characteristics.  
7
PS2501-1,-2,-4,PS2501L-1,-2,-4  
TAPING SPECIFICATIONS (in millimeters)  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
4.3±0.2  
1.55±0.1  
0.3  
1.55±0.1  
5.6±0.1  
8.0±0.1  
Tape Direction  
PS2501L-1-E3  
PS2501L-1-F3  
PS2501L-1-E4  
PS2501L-1-F4  
Outline and Dimensions (Reel)  
2.0±0.5  
φ
φ
φ13.0±0.5  
R 1.0  
φ
φ21.0±0.8  
+2.0  
16.4  
–0.0  
Packing: PS2501L-1-E3, E4 1 000 pcs/reel  
PS2501L-1-F3, F4 2 000 pcs/reel  
8
PS2501-1,-2,-4,PS2501L-1,-2,-4  
Outline and Dimensions (Tape)  
2.0±0.1  
4.0±0.1  
1.55±0.1  
4.3±0.2  
0.3  
10.4±0.1  
1.55±0.1  
12.0±0.1  
Tape Direction  
PS2501L-2-E3  
PS2501L-2-E4  
Outline and Dimensions (Reel)  
2.0±0.5  
φ13.0±0.5  
φ
R 1.0  
φ
φ21.0±0.8  
+2.0  
16.4  
–0.0  
Packing: 1 000 pcs/reel  
9
PS2501-1,-2,-4,PS2501L-1,-2,-4  
RECOMMENDED SOLDERING CONDITIONS  
(1) Infrared reflow soldering  
• Peak reflow temperature  
• Time of temperature higher than 210 °C  
• Number of reflows  
235 °C (package surface temperature)  
30 seconds or less  
Three  
• Flux  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt % is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
235 ˚C (peak temperature)  
210 ˚C  
to 30 s  
120 to 160 ˚C  
60 to 90 s  
(preheating)  
Time (s)  
Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.  
Peak temperature 235 ˚C or below  
(2) Dip soldering  
• Temperature  
260 °C or below (molten solder temperature)  
• Time  
10 seconds or less  
• Number of times  
• Flux  
One  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of  
0.2 Wt % is recommended.)  
10  
PS2501-1,-2,-4,PS2501L-1,-2,-4  
[MEMO]  
11  
PS2501-1,-2,-4,PS2501L-1,-2,-4  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEPOC is a trademark of NEC Corporation.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  

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