PS2581L1-A-D [NEC]

Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, PLASTIC, DIP-4;


型号：	PS2581L1-A-D
厂家：	NEC
描述：	Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, PLASTIC, DIP-4 光电输出元件分离技术隔离技术
文件：	总12页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

PHOTOCOUPLER

PS2581L1,PS2581L2

LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE

4-PIN PHOTOCOUPLER

−NEPOC^TMSeries−

DESCRIPTION

The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN

silicon phototransistor in a plastic DIP (Dual In-line Package).

Creepage distance and clearance of leads are over 8 millimeters.

The PS2581L2 is lead bending type (Gull-wing) for surface mounting.

FEATURES

•

Long creepage and clearance distance (8 mm)

High isolation voltage (BV = 5 000 Vr.m.s.)

High collector to emitter voltage (V^CEO= 80 V)

High-speed switching (t^r= 3 µs TYP., t^f= 5 µs TYP.)

High current transfer ratio (CTR = 200 % TYP.)

UL approved: File No. E72422 (S)

CSA approved: No. 101391

BSI approved: No. 8243/8244

NEMKO approved: No. P97103006

DEMKO approved: No. 307269

SEMKO approved: No. 9741154/01

FIMKO approved: No. 018277

VDE0884 approved

ORDERING INFORMATION

Part Number

Package

Safety Standard Approval

UL, CSA, BSI, NEMKO, DEMKO,

SEMKO, FIMKO, VDE approved

Application Part Number^*1

PS2581L1

PS2581L2

4-pin DIP

PS2581L2

(lead bending surface mount)

PS2581L2-E3, E4

4-pin DIP taping

*1 As applying to Safety Standard, following part number should be used.

The information in this document is subject to change without notice.

Document No. P12809EJ2V0DS00 (2nd edition)

Date Published June 1998 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1997

PS2581L1,PS2581L2

PACKAGE DIMENSIONS (in millimeters)

PS2581L1

4.6±0.35

1.0±0.2

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

10.16

7.62

0.50±0.1

0.25 M

2.54

1.25±0.15

0 to 15˚

PS2581L2

4.6±0.35

1.0±0.2

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

10.16

7.62

1.25±0.15

0.9±0.25

0.25 M

2.54

12.0 MAX.

PHOTOCOUPLER CONSTRUCTION

Parameter

Air Distance

Unit (MIN.)

8 mm

Outer Creepage Distance

Inner Creepage Distance

Isolation Thickness

8 mm

4 mm

0.4 mm

PS2581L1,PS2581L2

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Parameter

Symbol

I^F

Ratings

Unit

Diode

Forward Current (DC)

Reverse Voltage

V^R

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

1.5

mW/°C

150

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

Power Dissipation Derating

Power Dissipation

∆P^C/°C

P^C

1.5

mW/°C

Vr.m.s.

°C

150

Isolation Voltage^*2

5 000

Operating Ambient Temperature

Storage Temperature

T^A

−55 to +100

−55 to +150

T^stg

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

PS2581L1,PS2581L2

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.17

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 10 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1.0 MHz

V^CE= 80 V, I^F= 0 mA

Collector to Emitter Dark

Current

Transistor

Coupled

I^CEO

100

Current Transfer Ratio (I

^C/I^F)^*1

CTR

V^CE(sat)

R^I-O

C^I-O

t^r

I = 5 mA, V = 5 V

I^F= 10 mA, I^C= 2 mA

V^I-O= 1.0 kV^DC

200

400

0.3

Collector Saturation Voltage

Isolation Resistance

Isolation Capacitance

Rise Time^*2

10¹¹

Ω

V = 0 V, f = 1.0 MHz

V^CC= 10 V, I^C= 2 mA,

R^L= 100 Ω

0.5

µs

Fall Time^*2

t^f

*1 CTR rank

L : 200 to 400 (%)

M : 80 to 240 (%)

D : 100 to 300 (%)

H : 80 to 160 (%)

W : 130 to 260 (%)

N : 80 to 400 (%)

*2 Test circuit for switching time

Pulse Input

PW = 100

Duty Cycle = 1/10

OUT

50 Ω

RL = 100 Ω

PS2581L1,PS2581L2

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

150

100

150

100

Ambient Temperature T

125

(˚C)

150

100

125

(˚C)

150

Ambient Temperature T

FORWARD CURRENT vs.

FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

= +100 ˚C

+60 ˚C

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

0.5

IF = 5 mA

0.1

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

Forward Voltage V (V)

Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

10 000

1 000

100

CE = 80 V

40 V

24 V

10 V

5 V

= 1 mA

0.5

0.1

–50

–25

100

1.0

0.2

0.4

0.6

0.8

Ambient Temperature T (˚C)

Collector Saturation Voltage VCE(sat) (V)

PS2581L1,PS2581L2

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

450

1.2

400

350

300

250

200

150

100

1.0

0.8

0.6

0.4

0.2

Normalized to 1.0

at T

= 25 ˚C,

= 5 mA, VCE = 5 V

–50

0.05 0.1

0.5

Forward Current I

–25

100

Ambient Temperature T

(˚C)

(mA)

SWITCHING TIME vs.

LOAD RESISTANCE

SWITCHING TIME vs.

LOAD RESISTANCE

1 000

100

= 2 mA,

= 5 mA,

CC = 5 V,

CTR = 290 %

CC = 10 V,

CTR = 290 %

0.1

100

10 k

5 k

50 100

500

1 k

(Ω)

500 1 k

5 k 10 k

(Ω)

50 k 100 k

Load Resistance R

FREQUENCY RESPONSE

LONG TERM CTR DEGRADATION

1.2

1.0

0.8

0.6

0.4

0.2

= 5 mA,

CE = 5 V

TYP.

–5

I = 5 mA

= 25 ˚C

–10

–15

–20

100 Ω

= 5 mA

T = 60 ˚C

RL = 1 kΩ

300 Ω

10 20 50 100200 500

Frequency f (kHz)

10³

Time (Hr)

0.5

10²

10⁴

10⁵

Remark The graphs indicate nominal characteristics.

PS2581L1,PS2581L2

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

4.3±0.2

1.55±0.1

0.38

2.05±0.1

6.45±0.1

12.0±0.1

Tape Direction

PS2581L2-E3

PS2581L2-E4

Outline and Dimensions (Reel)

2.0±0.5

φ13.0±1.0

R 1.0

φ21.0±1.6

+2.0

–0.0

24.4

Packing: 1 000 pcs/reel

PS2581L1,PS2581L2

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering

• Peak reflow temperature

• Time of temperature higher than 210 °C

• Number of reflows

235 °C (package surface temperature)

30 seconds or less

Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)

210 ˚C

to 30 s

120 to 160 ˚C

60 to 90 s

(preheating)

Time (s)

Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature

260 °C or below (molten solder temperature)

• Time

10 seconds or less

• Number of times

• Flux

One

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

PS2581L1,PS2581L2

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Application classification (DIN VDE 0109)

Symbol

Speck

Unit

for rated line voltages ≤ 300 Vr.m.s.

for rated line voltages ≤ 600 Vr.m.s.

III

Climatic test class (DIN IEC 68 Teil 1/09.80)

55/100/21

Dielectric strength maximum operating isolation voltage.

Test voltage (partial discharge test procedure a for type test and random test)

U^pr= 1.2 × U^IORM, P^d< 5 pC

U^IORM

U^pr

890

V^peak

1 068

Test voltage (partial discharge test procedure b for random test)

U^pr

1 424

V^peak

U^pr= 1.6 × U^IORM, P^d< 5 pC

Highest permissible overvoltage

Degree of pollution (DIN VDE 0109)

Clearance distance

U^TR

8 000

V^peak

> 8.0

Creepage distance

> 8.0

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)

Material group (DIN VDE 0109)

Storage temperature range

CTI

175

III a

T^stg

T^A

−55 to +150

−55 to +100

°C

Operating temperature range

Isolation resistance, minimum value

V^IO= 500 V dc at T^A= 25 °C

Ris MIN.

10¹²

10¹¹

Ω

V^IO= 500 V dc at T^AMAX. at least 100 °C

Safety maximum ratings (maximum permissible in case of fault, see thermal

derating curve)

Package temperature

Tsi

Isi

175

400

700

°C

Current (input current I^F, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

Psi

V^IO= 500 V dc at T^A= 175 °C (Tsi)

Ris MIN.

10⁹

Ω

PS2581L1,PS2581L2

[MEMO]

PS2581L1,PS2581L2

[MEMO]

PS2581L1,PS2581L2

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

PS2581L1-A-D [NEC]

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