PS2581L1-V [NEC]
Transistor Output Optocoupler, 1-Element, 5000V Isolation, PLASTIC, DIP-4;
| 型号： | PS2581L1-V |
| 厂家： | 
NEC |
| 描述： | Transistor Output Optocoupler, 1-Element, 5000V Isolation, PLASTIC, DIP-4 输出元件 光电 |
| 文件： | 总12页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
PHOTOCOUPLER
PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
Long creepage and clearance distance (8 mm)
High isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (VCEO = 80 V)
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
High current transfer ratio (CTR = 200 % TYP.)
UL approved: File No. E72422 (S)
CSA approved: No. CA101391
BSI approved: No. 8243/8244
NEMKO approved: No. P97103006
DEMKO approved: No. 307269
SEMKO approved: No. 9741154/01
FIMKO approved: No. 018277
VDE0884 approved
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
UL, CSA, BSI, NEMKO, DEMKO,
SEMKO, FIMKO, VDE approved
Application Part Number*1
PS2581L1
PS2581L1
PS2581L2
4-pin DIP
4-pin DIP
PS2581L2
(lead bending surface mount)
PS2581L2-E3, E4
4-pin DIP taping
*1 As applying to Safety Standard, following part number should be used.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10239EJ01V0DS (1st edition)
The mark • shows major revised points.
(Previous No. P12809EJ2V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1997, 2003
PS2581L1,PS2581L2
PACKAGE DIMENSIONS (in millimeters)
PS2581L1
4.6±0.35
1.0±0.2
TOP VIEW
3
4
1
1. Anode
2. Cathode
3. Emitter
4. Collector
2
10.16
7.62
0.50±0.1
0.25 M
2.54
1.25±0.15
0 to 15˚
PS2581L2
4.6±0.35
1.0±0.2
TOP VIEW
3
4
1
1. Anode
2. Cathode
3. Emitter
4. Collector
2
10.16
7.62
1.25±0.15
0.9±0.25
0.25 M
2.54
12.0 MAX.
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
8 mm
Outer Creepage Distance
Inner Creepage Distance
Isolation Distance
8 mm
4 mm
0.4 mm
2
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
Unit
Diode
Forward Current (DC)
Reverse Voltage
80
mA
V
VR
6
Power Dissipation Derating
Power Dissipation
∆PD/°C
PD
1.5
mW/°C
mW
A
150
Peak Forward Current*1
IFP
1
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
80
V
7
50
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
150
Isolation Voltage*2
BV
5 000
Operating Ambient Temperature
Storage Temperature
TA
−55 to +100
−55 to +150
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.17
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 10 mA
VR = 5 V
IR
µA
pF
nA
Ct
V = 0 V, f = 1.0 MHz
VCE = 80 V, IF = 0 mA
50
Collector to Emitter Dark
Current
Transistor
Coupled
ICEO
100
Current Transfer Ratio (I
C/IF)*1
CTR
VCE(sat)
RI-O
CI-O
tr
I = 5 mA, V = 5 V
IF = 10 mA, IC = 2 mA
VI-O = 1.0 kVDC
F
CE
80
200
400
0.3
%
V
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time*2
1011
Ω
V = 0 V, f = 1.0 MHz
VCC = 10 V, IC = 2 mA,
RL = 100 Ω
0.5
3
pF
µs
Fall Time*2
tf
5
*1 CTR rank
L : 200 to 400 (%)
M : 80 to 240 (%)
D : 100 to 300 (%)
H : 80 to 160 (%)
W : 130 to 260 (%)
N : 80 to 400 (%)
*2 Test circuit for switching time
Pulse Input
V
CC
µ
PW = 100
s
Duty Cycle = 1/10
I
F
V
OUT
50 Ω
RL = 100 Ω
4
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
100
150
100
50
50
0
100
Ambient Temperature T
25
50
75
125
(˚C)
150
0
25
50
75
100
125
(˚C)
150
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
50
70
T
A
= +100 ˚C
+60 ˚C
60
50
40
30
20
10
+25 ˚C
10
5
0 ˚C
–25 ˚C
–55 ˚C
1
0.5
IF = 5 mA
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward Voltage V (V)
0
4
8
10
2
6
Collector to Emitter Voltage VCE (V)
F
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
10 000
1 000
100
10
V
CE = 80 V
40 V
10
5
24 V
10 V
5 V
IF
= 1 mA
1
0.5
1
0.1
–50
–25
0
25
50
75
100
1.0
0
0.2
0.4
0.6
0.8
Ambient Temperature T (˚C)
A
Collector Saturation Voltage VCE(sat) (V)
5
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
450
1.2
1.0
0.8
0.6
0.4
0.2
0
400
350
300
250
200
150
100
50
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, VCE = 5 V
0
–50
0.05 0.1
0.5
Forward Current I
–25
0
25
50
75
100
1
5
10
50
Ambient Temperature T
A
(˚C)
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
50
10
1 000
100
10
t
f
I
V
C
= 2 mA,
I
V
F
= 5 mA,
CC = 5 V,
CTR = 290 %
t
f
CC = 10 V,
tr
CTR = 290 %
µ
µ
ts
td
ts
1
tr
t
d
0.1
10
1
100
10 k
5 k
50 100
500
1 k
(Ω)
500 1 k
5 k 10 k
(Ω)
50 k 100 k
Load Resistance R
L
Load Resistance R
L
FREQUENCY RESPONSE
LONG TERM CTR DEGRADATION
1.2
1.0
0.8
0.6
0.4
0.2
I
V
F
= 5 mA,
CE = 5 V
TYP.
0
–5
I = 5 mA
F
TA
= 25 ˚C
–10
–15
–20
100 Ω
I
F
= 5 mA
A
T = 60 ˚C
RL = 1 kΩ
300 Ω
10 20 50 100200 500
Frequency f (kHz)
0
103
Time (Hr)
0.5
1
2
5
102
104
105
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
4.4±0.2
1.55±0.1
0.38
2.05±0.1
6.6±0.2
12.0±0.1
Tape Direction
PS2581L2-E3
PS2581L2-E4
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
R 1.0
21.0±0.8
25.5±1.0
29.5±1.0
23.9 to 27.4
Outer edge of
flange
Packing: 1 000 pcs/reel
7
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
• Time of temperature higher than 220°C
10 seconds or less
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
8
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
9
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Application classification (DIN VDE 0109)
Symbol
Speck
Unit
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength maximum operating isolation voltage.
Test voltage (partial discharge test procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
890
Vpeak
Vpeak
1 068
Test voltage (partial discharge test procedure b for all devices test)
Upr
1 424
Vpeak
Upr = 1.6 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
8 000
2
Vpeak
> 8.0
mm
mm
Creepage distance
> 8.0
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
175
III a
Tstg
TA
−55 to +150
−55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
109
Ω
10
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
•
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
11
Data Sheet PN10239EJ01V0DS
PS2581L1,PS2581L2
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309
NEC Electronics (Europe) GmbH
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
相关型号：
PS2581L1-Y-A-M
Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, PLASTIC, DIP-4
NEC
PS2581L1-Y-A-N
Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, PLASTIC, DIP-4
NEC
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