PS2602L-E3-L [NEC]

Transistor Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6;
PS2602L-E3-L
型号: PS2602L-E3-L
厂家: NEC    NEC
描述:

Transistor Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6

文件: 总8页 (文件大小:79K)
中文:  中文翻译
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DATA SHEET  
PHOTOCOUPLER  
PS2601,PS2602,PS2601L,PS2602L  
HIGH ISOLATION VOLTAGE  
NEPOCTM Series−  
6-PIN PHOTOCOUPLER  
DESCRIPTION  
The PS2601, PS2602, PS2601L, PS2602L are optically coupled isolators containing a GaAs light emitting diode  
and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package).  
The PS2601L, PS2602L are lead bending type (Gull-wing) for surface mount.  
FEATURES  
High Isolation voltage (BV = 5 000 Vr.m.s.)  
High collector to emitter voltage (VCEO = 80 V)  
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)  
High current transfer ratio (CTR = 300 % TYP.)  
UL approved: File No. E72422 (S)  
Ordering number of taping product: PS2601L-E3, E4, PS2602L-E3, E4  
APPLICATIONS  
Power supply, SSR  
Telephone, FAX  
AC/DC line interface  
Electric home appliances  
The information in this document is subject to change without notice.  
Document No. P11284EJ4V0DS00 (4th edition)  
Date Published April 1998 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1988  
©
PS2601,PS2602,PS2601L,PS2602L  
PACKAGE DIMENSIONS (in millimeters)  
PS2601, PS2602  
PS2601L, PS2602L  
Lead bending type  
DIP type  
10.16 MAX.  
10.16 MAX.  
7.62  
6.5  
7.62  
6.5  
0.9±0.25  
9.60±0.4  
2.54 MAX.  
1.34±0.10 2.54  
0.25  
0 to 15˚  
M
2.54 MAX.  
2.54  
1.34  
0.50±0.10  
0.25  
M
PIN CONNECTIONS (TOP VIEW)  
PS2601, PS2601L  
PS2602, PS2602L  
6
1
5
4
6
1
5
4
1. Anode  
2. Cathode  
3. NC  
4. Emitter  
5. Collector  
6. Base  
1. Anode  
2. Cathode  
3. NC  
4. Emitter  
5. Collector  
6. NC  
2
3
2
3
2
PS2601,PS2602,PS2601L,PS2602L  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)  
Parameter  
Symbol  
IF  
Ratings  
Unit  
mA  
Diode  
Forward Current (DC)  
Reverse Voltage  
80  
VR  
6.0  
V
Power Dissipation Derating  
Power Dissipation  
PD/°C  
PD  
1.5  
mW/°C  
mW  
A
150  
Peak Forward Current*1  
IFP  
1
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
VCEO  
VECO  
IC  
80  
V
7
50  
V
mA  
Power Dissipation Derating  
Power Dissipation  
PC/°C  
PC  
1.5  
mW/°C  
mW  
Vr.m.s.  
°C  
150  
Isolation Voltage*2  
BV  
5 000  
Operating Ambient Temperature  
Storage Temperature  
TA  
55 to +100  
55 to +150  
Tstg  
°C  
*1 PW = 100 µs, Duty Cycle = 1 %  
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output  
3
PS2601,PS2602,PS2601L,PS2602L  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
Parameter  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.1  
MAX.  
1.4  
Unit  
V
Diode  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
IF = 10 mA  
VR = 5 V  
IR  
5.0  
µA  
pF  
nA  
Ct  
V = 0 V, f = 1.0 MHz  
VCE = 80 V, IF = 0 mA  
30  
Collector to Emitter  
Dark Current  
Transistor  
Coupled  
ICEO  
100  
DC Current Gain*1  
hFE  
IC = 2 mA, VCE = 5 V  
IF = 5 mA, VCE = 5 V  
700  
300  
Current Transfer Ratio  
(IC/IF)*2  
CTR  
80  
600  
0.3  
%
V
Collector Saturation  
Voltage  
VCE (sat)  
IF = 10 mA, IC = 2 mA  
Isolation Resistance  
Isolation Capacitance  
Rise Time*3  
RI-O  
CI-O  
tr  
VI-O = 1.0 kVDC  
1011  
V = 0 V, f = 1.0 MHz  
0.6  
3
pF  
µs  
VCC = 5 V, IC = 2 mA, RL = 100 Ω  
Fall Time*3  
tf  
5
*1 PS2601, PS2601L only  
*2 CTR rank  
K: 300 to 600 (%)  
L: 200 to 400 (%)  
M: 80 to 240 (%)  
*3 Test circuit for switching time  
Pulse input  
V
V
CC  
(PW = 100 µs,  
Duty cycle = 1/10)  
I
F
OUT  
50  
RL = 100 Ω  
4
PS2601,PS2602,PS2601L,PS2602L  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
TRANSISTOR POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
200  
150  
100  
50  
200  
150  
100  
50  
0
25  
50  
75  
100  
0
25  
50  
75  
100  
Ambient Temperature T  
A
(˚C)  
Ambient Temperature T  
A
(˚C)  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
100  
10  
1
70  
60  
50  
40  
30  
20  
10  
T
A
= +100 ˚C  
+75 ˚C  
+50 ˚C  
+25 ˚C  
0 ˚C  
–25 ˚C  
–55 ˚C  
50 mA  
20 mA  
10 mA  
IF = 5 mA  
0.1  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
(V)  
1.6  
0
2
4
6
8
10  
Forward Voltage V  
F
Collector to Emitter Voltage VCE (V)  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
10 000  
100  
10  
1
I
F
= 50 mA  
20 mA  
1 000  
100  
V
CE = 80 V  
40 V  
24 V  
10 V  
5 V  
10 mA  
5 mA  
2 mA  
1 mA  
10  
1
0.1  
0.1  
0.01  
–60 –40 –20  
0
20  
40  
60  
80 100  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
Ambient Temperature T  
A
(˚C)  
Collector Saturation Voltage VCE(sat) (V)  
5
PS2601,PS2602,PS2601L,PS2602L  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
CE = 5 V  
200  
150  
400  
300  
200  
100  
100  
50  
0
Normalized to 1.0  
at T  
A
= 25 ˚C,  
I
F
= 5 mA, VCE = 5 V  
0
–50  
–25  
0
25  
50  
75  
100  
0.05 0.1  
0.5 0.5  
1
5
10  
50  
Ambient Temperature T  
A
(˚C)  
Forward Current I  
F
(mA)  
SWITCHING TIME vs.  
LOAD RESISTANCE  
SWITCHING TIME vs.  
LOAD RESISTANCE  
100  
1 000  
500  
V
CC = 5 V,  
I = 5 mA,  
F
I = 2 mA,  
C
50  
30  
V
CC = 5 V,  
Sample  
CTR = 290 %  
t
t
f
t
t
d
r
Sample  
CTR = 290 %  
t
f
µ
µ
100  
s
10  
50  
5
3
10  
5
t
t
r
t
s
1
d
0.5  
0.3  
10  
1
0.1  
50 100  
500 1 k  
()  
5 k  
0.5  
1
5
10  
50  
Load Resistance R  
L
Load Resistance R  
L
(k)  
FREQUENCY RESPONSE  
LONG TERM CTR DEGRADATION  
5
0
1.2  
1.0  
I
V
F
= 5 mA,  
CE = 5 V  
IF = 5 mA  
20 mA  
40 mA  
–5  
0.8  
0.6  
R = 1 kΩ  
L
100 Ω  
–10  
–15  
0.4  
0.2  
0.0  
–20  
–25  
CTR Test condition  
= 5 mA, VCE = 5 V  
104 105 106  
I
F
300 Ω  
500 1 000  
0.5  
1
5
10  
50 100  
1
102  
103  
Frequency f (kHz)  
Time (Hr)  
Remark The graphs indicate nominal characteristics.  
6
PS2601,PS2602,PS2601L,PS2602L  
RECOMMENDED SOLDERING CONDITIONS  
(1) Infrared reflow soldering  
• Peak reflow temperature  
235 °C (package surface temperature)  
• Time of temperature higher than 210 °C 30 seconds or less  
• Number of reflows  
• Flux  
Three  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt % is recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
235 ˚C (peak temperature)  
210 ˚C  
to 30 s  
120 to 160 ˚C  
60 to 90 s  
(preheating)  
Time (s)  
Caution Please avoid removing the residual flux by water after the first reflow process.  
Peak temperature 235 ˚C or below  
(2) Dip soldering  
• Temperature  
260 °C or below (molten solder temperature)  
• Time  
10 seconds or less  
• Number of times  
• Flux  
One  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of  
0.2 Wt % is recommended.)  
7
PS2601,PS2602,PS2601L,PS2602L  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEPOC is a trademark of NEC Corporation.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  

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