PS2651L2-V [NEC]

Transistor Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6;


型号：	PS2651L2-V
厂家：	NEC
描述：	Transistor Output Optocoupler, 1-Element, 5000V Isolation, GULL-WING, PLASTIC, DIP-6 输出元件光电
文件：	总12页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

PHOTOCOUPLER

PS2651,PS2652,PS2651L2,PS2652L2

LONG CREEPAGE TYPE

HIGH ISOLATION VOLTAGE

−NEPOC^TMSeries−

6-PIN PHOTOCOUPLER

DESCRIPTION

The PS2651, PS2652, PS2651L2, PS2562L2 are optically coupled isolators containing a GaAs light emitting diode

and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package).

Creepage distance and clearance of leads are over 8 millimeters.

The PS2651L2, PS2652L2 are lead bending type (Gull-wing) for surface mount.

FEATURES

• Long creepage distance (8 mm)

• High Isolation voltage (BV = 5 000 Vr.m.s.)

• High collector to emitter voltage (V^CEO= 80 V)

• High-speed switching (t^r= 3 µs TYP., t^f= 5 µs TYP.)

• High current transfer ratio (CTR = 200 % TYP.)

• UL approved: File No. E72422 (S)

• BSI approved (EN 60065/IEC 65, EN 60950/IEC 950) : No. 7250

• SEMKO approved (EN 60065/IEC 60065, EN 60950/IEC 60950) : No. 9317144

• NEMKO approved (EN 60065/IEC 65, EN 60950/IEC 950) : No. A21409

• DEMKO approved (EN 60065/IEC 60665, EN 60950/IEC 950) : No. 300535

• FIMKO approved (EN 60065/IEC 65, EN 60950/IEC 950) : No. 167265-08

• VDE0884 approved (Option)

APPLICATIONS

• Power supply

• Telephone, FAX

• FA/OA equipment

The information in this document is subject to change without notice.

Document No. P11290EJ5V0DS00 (5th edition)

Date Published January 1998 NS CP(K)

The mark • shows major revised points.

1990

Printed in Japan

PS2651,PS2652,PS2651L2,PS2652L2

PACKAGE DIMENSIONS (in millimeters)

PS2651, PS2652

PS2651L2, PS2652L2

DIP type

Lead bending type

10.16 MAX.

10.16

7.62

6.5

10.16

7.62

6.5

0.9±0.25

11.8±0.4

2.54 2.54

MAX.

1.34±0.10

0.25 M

0 to 15˚

0.50±0.10

2.54 MAX.

2.54

1.34

0.25 M

PIN CONNECTIONS (TOP VIEW)

PS2651, PS2651L2

PS2652, PS2652L2

1. Anode

2. Cathode

3. NC

1. Anode

2. Cathode

3. NC

4. Emitter

5. Collector

6. Base

4. Emitter

5. Collector

6. NC

PS2651,PS2652,PS2651L2,PS2652L2

ORDERING INFORMATION

Part Number

Package

Safety Standard Approval

Application Part Number^*1

PS2651

PS2651, PS2652

6-pin DIP

Standard products

• UL approved

• BSI approved

PS2651L2, PS2652L2

6-pin DIP (lead bending

surface mount)

PS2652

• NEMKO approved • DEMKO approved

• SEMKO approved • FIMKO approved

PS2651-V, PS2652-V

6-pin DIP

VDE0884 approved products (Option)

• VDE approved

• BSI approved

• NEMKO approved • DEMKO approved

• FIMKO approved

• UL approved

• SEMKO approved

PS2651L2-V, PS2652L2-V 6-pin DIP (lead bending

surface mount)

*1 As applying to Safety Standard, following part number should be used.

PS2651,PS2652,PS2651L2,PS2652L2

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Parameter

Symbol

Unit

Ratings

Diode

Forward Current (DC)

Reverse Voltage

I^F

V^R

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

1.5

mW/°C

150

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

Power Dissipation Derating

Power Dissipation

∆P^C/°C

P^C

1.5

mW/°C

Vr.m.s.

°C

150

Isolation Voltage^*2

5 000

Operating Ambient Temperature

Storage Temperature

T^A

−55 to +100

−55 to +150

T^stg

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

PS2651,PS2652,PS2651L2,PS2652L2

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.1

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 10 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1.0 MHz

V^CE= 80 V, I^F= 0 mA

Collector to Emitter

Dark Current

Transistor

Coupled

I^CEO

100

DC Current Gain^*1

h^FE

I^C= 2 mA, V^CE= 5 V

I^F= 5 mA, V^CE= 5 V

I^F= 10 mA, I^C= 2 mA

700

200

Current Transfer Ratio^*2

CTR

400

0.3

Collector Saturation

Voltage

V^{CE (sat)}

Isolation Resistance

Isolation Capacitance

Rise Time^*3

R^I-O

C^I-O

t^r

V^I-O= 1.0 kV^DC

10¹¹

Ω

V = 0 V, f = 1.0 MHz

0.6

µs

V^CC= 5 V, I^C= 2 mA, R^L= 100 Ω

Fall Time^*3

t^f

*1 PS2651, PS2651L2 only

*2 CTR rank

K: 160 to 400 (%)

L: 80 to 240 (%)

M: 50 to 120 (%)

*3 Test circuit for switching time

Pulse input

(PW = 100 µs,

Duty cycle = 1/10)

OUT

50 Ω

RL = 100 Ω

PS2651,PS2652,PS2651L2,PS2652L2

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

200

150

100

200

150

100

Ambient Temperature T

(˚C)

Ambient Temperature T

(˚C)

FORWARD CURRENT vs.

FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

= +100 ˚C

+75 ˚C

+50 ˚C

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

50 mA

20 mA

10 mA

IF = 5 mA

0.1

0.01

0.6

0.8

1.0

1.2

1.4

(V)

1.6

Forward Voltage V

Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

10 000

100

= 50 mA

20 mA

1 000

100

CE = 80 V

40 V

24 V

10 V

5 V

10 mA

5 mA

2 mA

1 mA

0.1

0.01

–60 –40 –20

80 100

0.0

0.2

0.4

0.6

0.8

1.0

Ambient Temperature T

(˚C)

Collector Saturation Voltage VCE(sat) (V)

PS2651,PS2652,PS2651L2,PS2652L2

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1.2

1.0

0.8

0.6

0.4

0.2

0.0

CE = 5 V

200

150

400

300

200

100

Normalized to 1.0

at T

= 25 ˚C,

= 5 mA, VCE = 5 V

–50

–25

100

0.05 0.1

0.5 0.5

Ambient Temperature T

(˚C)

Forward Current I

(mA)

SWITCHING TIME vs.

LOAD RESISTANCE

SWITCHING TIME vs.

LOAD RESISTANCE

100

1 000

500

CC = 5 V,

I = 5 mA,

I = 2 mA,

CC = 5 V,

Sample

CTR = 290 %

Sample

CTR = 290 %

100

0.5

0.3

0.1

50 100

500 1 k

(Ω)

5 k

0.5

Load Resistance R

(kΩ)

FREQUENCY RESPONSE

LONG TERM CTR DEGRADATION

1.2

1.0

= 5 mA,

CE = 5 V

IF = 5 mA

20 mA

40 mA

–5

0.8

0.6

R = 1 kΩ

100 Ω

–10

–15

0.4

0.2

0.0

–20

–25

CTR Test condition

= 5 mA, VCE = 5 V

10⁴10⁵10⁶

300 Ω

500 1 000

0.5

50 100

10²

10³

Frequency f (kHz)

Time (Hr)

Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.

PS2651,PS2652,PS2651L2,PS2652L2

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering

• Peak reflow temperature

• Time of temperature higher than 210 °C

• Number of reflows

235 °C (package surface temperature)

30 seconds or less

Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)

210 ˚C

to 30 s

120 to 160 ˚C

60 to 90 s

(preheating)

Time (s)

Caution Please avoid to removed the residual flux by water after the first reflow processes.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature

260 °C or below (molten solder temperature)

• Time

10 seconds or less

• Number of times

• Flux

One

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

PS2651,PS2652,PS2651L2,PS2652L2

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Application classification (DIN VDE 0109)

Symbol

Speck

Unit

for rated line voltages ≤ 300 Vr.m.s.

for rated line voltages ≤ 600 Vr.m.s.

III

Climatic test class (DIN IEC 68 Teil 1/09.80)

55/100/21

Dielectric strength

Maximum operating isolation voltage

Test voltage (partial discharge test, procedure a for type test and random test)

U^pr= 1.2 × U^IORM, P^d< 5 pC

U^IORM

U^pr

890

V^peak

1 068

Test voltage (partial discharge test, procedure b for random test)

U^pr= 1.6 × U^IORM, P^d< 5 pC

U^pr

1 424

V^peak

Highest permissible overvoltage

Degree of pollution (DIN VDE 0109)

Clearance distance

U^TR

8 000

V^peak

> 8.0

Creepage distance

> 8.0

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)

Material group (DIN VDE 0109)

Storage temperature range

CTI

175

III a

T^stg

T^A

–55 to +150

–55 to +100

°C

Operating temperature range

Isolation resistance, minimum value

V^IO= 500 V dc at T^A= 25 °C

Ris MIN.

10¹²

10¹¹

Ω

V^IO= 500 V dc at T^AMAX. at least 100 °C

Safety maximum ratings (maximum permissible in case of fault, see thermal

derating curve)

Package temperature

Tsi

Isi

175

400

700

°C

Current (input current I^F, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

Psi

V^IO= 500 V dc at T^A= 175 °C (Tsi)

Ris MIN.

10⁹

Ω

PS2651,PS2652,PS2651L2,PS2652L2

[MEMO]

PS2651,PS2652,PS2651L2,PS2652L2

[MEMO]

PS2651,PS2652,PS2651L2,PS2652L2

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

PS2651L2-V [NEC]

相关型号：

PS2651L2-V-K

PS2651L2K

PS2651L2L

PS2651L2M

PS2652

PS2652-E3-80

PS2652-E4-400

PS2652-E4-80

PS2652-F3-80

PS2652-F3-XXX

PS2652-F4-400

PS2652-F4-80