PS2701-1-V-M [NEC]

Transistor Output Optocoupler, 1-Element, 3750V Isolation, SOP-4;


型号：	PS2701-1-V-M
厂家：	NEC
描述：	Transistor Output Optocoupler, 1-Element, 3750V Isolation, SOP-4
文件：	总12页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

PHOTOCOUPLER

PS2701-1

HIGH ISOLATION VOLTAGE

SOP MULTI PHOTOCOUPLER

−NEPOC Series−

DESCRIPTION

The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon

phototransistor.

This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.

It is designed for high density mounting applications.

FEATURES

•

High isolation voltage (BV = 3 750 Vr.m.s.)

SOP (Small Outline Package) type

High-speed switching (t^r= 3 µs TYP., t^f= 5 µs TYP.)

Ordering number of taping product: PS2701-1-F3, F4

UL approved: File No. E72422 (S)

VDE0884 approved (Option)

APPLICATIONS

•

Hybrid IC

Measuring instruments

Power supply

Programmable logic controllers

ORDERING INFORMATION

Part Number

PS2701-1

Package

Safety Standard Approval

Standard products

4-pin SOP

• UL approved

PS2701-1-V

4-pin SOP

VDE0884 approved products (Option)

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PN10240EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P11306EJ6V0DS00)

Date Published February 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1988, 2003

PS2701-1

PACKAGE DIMENSIONS (in millimeters)

PS2701-1

4.5±0.5

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

7.0±0.3

4.4

2.54

0.5±0.3

+0.10

0.4

0.25 M

–0.05

Data Sheet PN10240EJ01V0DS

PS2701-1

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Parameter

Symbol

I^F

Ratings

Unit

Diode

Forward Current (DC)

Reverse Voltage

V^R

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

0.8

mW/°C

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

Power Dissipation Derating

Power Dissipation

∆P^C/°C

P^C

1.5

mW/°C

Vr.m.s.

°C

150

Isolation Voltage^*2

3 750

Operating Ambient Temperature

Storage Temperature

T^A

–55 to +100

–55 to +150

T^stg

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

Data Sheet PN10240EJ01V0DS

PS2701-1

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.1

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 5 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1 MHz

Collector to Emitter Dark

Current

Transistor

Coupled

I^CEO

I^F= 0 mA, V^CE= 40 V

100

300

Current Transfer Ratio

(I^C/I^F)^*1

CTR

I^F= 5 mA, V^CE= 5 V

I^F= 10 mA, I^C= 2 mA

100

Collector Saturation

Voltage

V^{CE (sat)}

0.3

Isolation Resistance

R^I-O

C^I-O

t^r

V^I-O= 1 kV^DC

10¹¹

Ω

Isolation Capacitance

Rise Time ^*2

V = 0 V, f = 1 MHz

0.4

µs

V^CC= 5 V, I^C= 2 mA, R^L= 100 Ω

Fall Time ^*2

t^f

*1 CTR rank

P: 150 to 300 (%)

L: 100 to 300 (%)

M: 50 to 150 (%)

*2 Test circuit for switching time

Pulse input

PW = 100 µs,

Duty cycle = 1/10

VOUT

50 Ω

= 100 Ω

Data Sheet PN10240EJ01V0DS

PS2701-1

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

200

150

100

1.5 mW/˚C

100

(˚C)

100

Ambient Temperature T

(˚C)

Ambient Temperature T

FORWARD CURRENT vs.

FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

IF = 30 mA

= +100 ˚C

+75 ˚C

+50 ˚C

20 mA

15 mA

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

10 mA

0.1

5 mA

0.01

0.6

0.8

1.0

1.2

1.4

1.6

Forward Voltage V

(V)

Collector to Emitter Voltage V^CE(V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

10 000

= 25 mA

10 mA

5 mA

1 000

100

CE = 40 V

24 V

10 V

2 mA

1 mA

0.5

0.2

0.1

–60 –40 –20

60 80 100

(˚C)

0.0

0.2

0.4

0.6

0.8

1.0

Ambient Temperature T

Collector Saturation Voltage V^{CE (sat)}(V)

Data Sheet PN10240EJ01V0DS

PS2701-1

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1.2

300

250

200

150

100

CE = 5 V

1.0

0.8

0.6

0.4

0.2

0.0

Normalized to 1.0

at T = 25 ˚C,

= 5 mA, VCE = 5 V

50 75

–50

–25

100

0.05 0.1

0.5

Ambient Temperature T (˚C)

Forward Current I

(mA)

SWITCHING TIME vs.

LOAD RESISTANCE

FREQUENCY RESPONSE

100

1.2

1.0

CC = 5 V,

= 2 mA

off

= 1 kΩ

510 Ω

300 Ω

100 Ω

0.8

0.6

0.4

0.2

0.0

0.5

0.1

100

200

500

1 k

2 k

50 100 200

500

Load Resistance R

(Ω)

Frequency f (kHz)

SWITCHING TIME vs.

LOAD RESISTANCE

LONG TERM CTR DEGRADATION

1 000

500

1.2

1.0

= 5 mA, VCC = 5 V,

CTR = 169 %

100

0.8

0.6

= 1 mA,

= 5 mA,

= 20 mA, T

= 25 ˚C

= 60 ˚C

0.4

0.2

0.0

0.5

0.1

100

500 1 k

5 k 10 k

(Ω)

50 k100 k

10²

10³

10⁴

10⁵

10⁶

Load Resistance R

Time (Hr)

Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.

Data Sheet PN10240EJ01V0DS

PS2701-1

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.05

4.0±0.1

+0.1

–0

2.9 MAX.

1.5

1.55±0.1

2.4±0.1

0.3

4.6±0.1

8.0±0.1

Tape Direction

PS2701-1-F4

PS2701-1-F3

Outline and Dimensions (Reel)

2.0±0.5

13.0±0.2

R 1.0

φ21.0±0.8

13.5±1.0

17.5±1.0

11.9 to 15.4

Outer edge of

flange

Packing: 3 500 pcs/reel

Data Sheet PN10240EJ01V0DS

PS2701-1

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature

260°C or below (package surface temperature)

10 seconds or less

• Time of peak reflow temperature

• Time of temperature higher than 220°C

60 seconds or less

• Time to preheat temperature from 120 to 180°C 120±30 s

• Number of reflows

• Flux

Three

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt% is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

260˚C MAX.

220˚C

to 60 s

180˚C

120˚C

120±30 s

(preheating)

Time (s)

(2) Wave soldering

• Temperature

• Time

260°C or below (molten solder temperature)

10 seconds or less

• Preheating conditions

• Number of times

• Flux

120°C or below (package surface temperature)

One (Allowed to be dipped in solder including plastic mold portion.)

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine

content of 0.2 Wt% is recommended.)

(3) Cautions

• Fluxes

Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between

collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute

maximum ratings.

Data Sheet PN10240EJ01V0DS

PS2701-1

USAGE CAUTIONS

1. Protect against static electricity when handling.

2. Avoid storage at a high temperature and high humidity.

Data Sheet PN10240EJ01V0DS

PS2701-1

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Application classification (DIN VDE 0109)

Symbol

Speck

Unit

for rated line voltages ≤ 300 Vr.m.s.

III

for rated line voltages ≤ 600 Vr.m.s.

Climatic test class (DIN IEC 68 Teil 1/09.80)

Dielectric strength

55/100/21

Maximum operating isolation voltage

Test voltage (partial discharge test, procedure a for type test and random test)

U^pr= 1.2 × U^IORM, P^d< 5 pC

U^IORM

U^pr

710

850

V^peak

Test voltage (partial discharge test, procedure b for all devices test)

U^pr

1 140

V^peak

U^pr= 1.6 × U^IORM, P^d< 5 pC

Highest permissible overvoltage

Degree of pollution (DIN VDE 0109)

Clearance distance

U^TR

6 000

V^peak

> 5

Creepage distance

> 5

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)

Material group (DIN VDE 0109)

Storage temperature range

CTI

175

III a

T^stg

T^A

–55 to +150

–55 to +100

°C

Operating temperature range

Isolation resistance, minimum value

V^IO= 500 V dc at T^A= 25 °C

Ris MIN.

10¹²

10¹¹

Ω

V^IO= 500 V dc at T^AMAX. at least 100 °C

Safety maximum ratings

(maximum permissible in case of fault, see thermal derating curve)

Package temperature

Tsi

Isi

150

200

300

°C

Current (input current I^F, Psi = 0)

Power (output or total power dissipation)

Isolation resistance

Psi

V^IO= 500 V dc at T^A= 175 °C (Tsi)

Ris MIN.

10⁹

Ω

Data Sheet PN10240EJ01V0DS

PS2701-1

•

The information in this document is current as of February, 2003. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

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Customers must check the quality grade of each semiconductor product before using it in a particular

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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

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(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

Data Sheet PN10240EJ01V0DS

PS2701-1

SAFETY INFORMATION ON THIS PRODUCT

The product contains gallium arsenide, GaAs.

Caution GaAs Products

GaAs vapor and powder are hazardous to human health if inhaled or ingested.

• Do not destroy or burn the product.

• Do not cut or cleave off any part of the product.

• Do not crush or chemically dissolve the product.

• Do not put the product in the mouth.

Follow related laws and ordinances for disposal. The product should be excluded from general

industrial waste or household garbage.

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

TEL: +82-2-558-2120

FAX: +82-2-558-5209

http://www.ee.nec.de/

TEL: +49-211-6503-01 FAX: +49-211-6503-487

FAX: +852-3107-7309

NEC Electronics (Europe) GmbH

California Eastern Laboratories, Inc.

http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

0302

PS2701-1-V-M [NEC]

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