PS2701-1-V-M [NEC]
Transistor Output Optocoupler, 1-Element, 3750V Isolation, SOP-4;型号: | PS2701-1-V-M |
厂家: | NEC |
描述: | Transistor Output Optocoupler, 1-Element, 3750V Isolation, SOP-4 |
文件: | 总12页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
PHOTOCOUPLER
PS2701-1
HIGH ISOLATION VOLTAGE
SOP MULTI PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.
It is designed for high density mounting applications.
FEATURES
•
•
•
•
•
•
High isolation voltage (BV = 3 750 Vr.m.s.)
SOP (Small Outline Package) type
High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
Ordering number of taping product: PS2701-1-F3, F4
UL approved: File No. E72422 (S)
VDE0884 approved (Option)
APPLICATIONS
•
•
•
•
Hybrid IC
Measuring instruments
Power supply
Programmable logic controllers
ORDERING INFORMATION
Part Number
PS2701-1
Package
Safety Standard Approval
Standard products
4-pin SOP
• UL approved
PS2701-1-V
4-pin SOP
VDE0884 approved products (Option)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10240EJ01V0DS (1st edition)
The mark • shows major revised points.
(Previous No. P11306EJ6V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1988, 2003
PS2701-1
PACKAGE DIMENSIONS (in millimeters)
PS2701-1
4.5±0.5
TOP VIEW
4
1
3
1. Anode
2. Cathode
3. Emitter
4. Collector
2
7.0±0.3
4.4
2.54
0.5±0.3
+0.10
0.4
0.25 M
–0.05
2
Data Sheet PN10240EJ01V0DS
PS2701-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
Unit
mA
Diode
Forward Current (DC)
Reverse Voltage
50
VR
6
V
Power Dissipation Derating
Power Dissipation
∆PD/°C
PD
0.8
mW/°C
mW
A
80
Peak Forward Current*1
IFP
1
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
40
V
6
80
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
150
Isolation Voltage*2
BV
3 750
Operating Ambient Temperature
Storage Temperature
TA
–55 to +100
–55 to +150
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
Data Sheet PN10240EJ01V0DS
PS2701-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.1
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 5 mA
VR = 5 V
IR
µA
pF
nA
Ct
V = 0 V, f = 1 MHz
30
Collector to Emitter Dark
Current
Transistor
Coupled
ICEO
IF = 0 mA, VCE = 40 V
100
300
Current Transfer Ratio
(IC/IF)*1
CTR
IF = 5 mA, VCE = 5 V
IF = 10 mA, IC = 2 mA
50
100
%
V
Collector Saturation
Voltage
VCE (sat)
0.3
Isolation Resistance
RI-O
CI-O
tr
VI-O = 1 kVDC
1011
Ω
Isolation Capacitance
Rise Time *2
V = 0 V, f = 1 MHz
0.4
3
pF
µs
VCC = 5 V, IC = 2 mA, RL = 100 Ω
Fall Time *2
tf
5
*1 CTR rank
P: 150 to 300 (%)
L: 100 to 300 (%)
M: 50 to 150 (%)
*2 Test circuit for switching time
Pulse input
V
CC
PW = 100 µs,
Duty cycle = 1/10
IF
VOUT
50 Ω
RL
= 100 Ω
4
Data Sheet PN10240EJ01V0DS
PS2701-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
75
200
150
100
50
1.5 mW/˚C
50
25
0
25
50
75
100
0
25
50
75
(˚C)
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
50
40
30
20
10
IF = 30 mA
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
20 mA
15 mA
1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
10 mA
0.1
5 mA
8
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 000
50
I
F
= 25 mA
10 mA
5 mA
20
10
1 000
100
10
V
CE = 40 V
24 V
10 V
5
2
1
2 mA
1 mA
0.5
1
0.2
0.1
0.1
–60 –40 –20
0
20
40
60 80 100
(˚C)
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
Collector Saturation Voltage VCE (sat) (V)
5
Data Sheet PN10240EJ01V0DS
PS2701-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.2
300
250
200
150
100
V
CE = 5 V
1.0
0.8
0.6
0.4
0.2
0.0
Normalized to 1.0
at T = 25 ˚C,
= 5 mA, VCE = 5 V
50 75
50
0
A
I
F
–50
–25
0
25
100
0.05 0.1
0.5
1
5
10
50
Ambient Temperature T (˚C)
A
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
100
50
1.2
1.0
V
CC = 5 V,
= 2 mA
I
C
t
t
on
off
µ
RL
= 1 kΩ
510 Ω
300 Ω
100 Ω
10
5
0.8
0.6
0.4
0.2
0.0
t
t
d
s
1
0.5
0.1
50
100
200
500
1 k
2 k
2
5
10
20
50 100 200
500
Load Resistance R
L
(Ω)
Frequency f (kHz)
SWITCHING TIME vs.
LOAD RESISTANCE
LONG TERM CTR DEGRADATION
1 000
500
1.2
1.0
I
F
= 5 mA, VCC = 5 V,
t
t
f
CTR = 169 %
s
100
µ
50
0.8
0.6
IF
IF
IF
IF
= 1 mA,
= 5 mA,
= 20 mA, T
= 20 mA, T
T
T
A
A
A
A
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 60 ˚C
10
5
t
t
r
0.4
0.2
0.0
d
1
0.5
0.1
100
500 1 k
5 k 10 k
(Ω)
50 k100 k
1
102
103
104
105
106
Load Resistance R
L
Time (Hr)
Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
6
Data Sheet PN10240EJ01V0DS
PS2701-1
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.05
4.0±0.1
+0.1
–0
2.9 MAX.
1.5
1.55±0.1
2.4±0.1
0.3
4.6±0.1
8.0±0.1
Tape Direction
PS2701-1-F4
PS2701-1-F3
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
φ
φ
R 1.0
φ
φ
φ21.0±0.8
13.5±1.0
17.5±1.0
11.9 to 15.4
Outer edge of
flange
Packing: 3 500 pcs/reel
7
Data Sheet PN10240EJ01V0DS
PS2701-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
• Time of peak reflow temperature
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
8
Data Sheet PN10240EJ01V0DS
PS2701-1
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
9
Data Sheet PN10240EJ01V0DS
PS2701-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Application classification (DIN VDE 0109)
Symbol
Speck
Unit
for rated line voltages ≤ 300 Vr.m.s.
IV
III
for rated line voltages ≤ 600 Vr.m.s.
Climatic test class (DIN IEC 68 Teil 1/09.80)
Dielectric strength
55/100/21
Maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
710
850
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices test)
Upr
1 140
Vpeak
Upr = 1.6 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
6 000
Vpeak
2
> 5
mm
mm
Creepage distance
> 5
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +150
–55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature
Tsi
Isi
150
200
300
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
109
Ω
10
Data Sheet PN10240EJ01V0DS
PS2701-1
•
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4-0110
11
Data Sheet PN10240EJ01V0DS
PS2701-1
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309
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California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
相关型号:
PS2701-1L-F3-A
Transistor Output Optocoupler, 1-Element, 3750V Isolation, LEAD FREE, PLASTIC, SOP-4
NEC
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