PS2703-1-V-F4-M [NEC]
Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4;型号: | PS2703-1-V-F4-M |
厂家: | NEC |
描述: | Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4 输出元件 光电 |
文件: | 总13页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
PHOTOCOUPLER
PS2703-1
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER VOLTAGE TYPE
SOP MULTI PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
This is mounted in a plastic SOP (Small Outline Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
•
•
•
•
•
•
•
High isolation voltage (BV = 3 750 Vr.m.s.)
High collector to emitter voltage (VCEO = 120 V)
SOP (Small Outline Package) type
Each isolated channel per package
High-speed switching (tr, tf = 10 µs TYP.)
Taping product number: PS2703-1-F3, F4
Safety standards
• UL approved: File No. E72422
• BSI approved: File No. 8219/8220
• CSA approved: File No. CA 101391
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
•
•
•
•
•
Hybrid IC
Telephone/FAX
FA/OA equipment
Programmable logic controllers
Power supply
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10242EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 1988, 2006
PS2703-1
PACKAGE DIMENSIONS (in millimeters)
PS2703-1
4.0 0.ꢀ
TOP VIEW
4
1
ꢁ
1. Anode
2. Cathode
ꢁ. Emitter
4. Collector
2
7.0 0.ꢁ
4.4
2.ꢀ4
0.ꢀ 0.ꢁ
+0.10
0.4
0.2ꢀ M
–0.0ꢀ
MARKING EXAMPLE
Trade Mark
No. 1 pin Mark
270ꢁ
M601
Type Number
Assembly Lot
*1
M
6 01
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Name
*1 Bar : Pb-Free
Remark "PS" and "-1" are omitted from original type number
2
Data Sheet PN10242EJ02V0DS
PS2703-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Packing Style
Safety Standard
Approval
Application Part
Number*1
PS270ꢁ-1
PS270ꢁ-1-A
Pb-Free
Magazine case 100 pcs
Standard products PS270ꢁ-1
PS270ꢁ-1-Fꢁ
PS270ꢁ-1-F4
PS270ꢁ-1-V
PS270ꢁ-1-V-Fꢁ
PS270ꢁ-1-V-F4
PS270ꢁ-1-Fꢁ-A
PS270ꢁ-1-F4-A
PS270ꢁ-1-V-A
PS270ꢁ-1-V-Fꢁ-A
PS270ꢁ-1-V-F4-A
Embossed Tape ꢁ ꢀ00 pcs/reel (UL, BSI, CSA
approved)
Magazine case 100 pcs
DIN EN60747-ꢀ-2
Embossed Tape ꢁ ꢀ00 pcs/reel (VDE0884 Part2)
Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
3
Data Sheet PN10242EJ02V0DS
PS2703-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
Unit
mA
Diode
Forward Current (DC)
Reverse Voltage
ꢀ0
VR
6
V
Power Dissipation Derating
Power Dissipation
∆PD/°C
PD
0.8
mW/°C
mW
A
80
Peak Forward Current*1
IFP
1
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
120
V
6
ꢁ0
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.ꢀ
mW/°C
mW
Vr.m.s.
°C
1ꢀ0
Isolation Voltage*2
BV
ꢁ 7ꢀ0
Operating Ambient Temperature
Storage Temperature
TA
–ꢀꢀ to +100
–ꢀꢀ to +1ꢀ0
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 2ꢀ°C, RH = 60% between input and output
Pins 1-2 shorted together, ꢁ-4 shorted together.
4
Data Sheet PN10242EJ02V0DS
PS2703-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.1
MAX.
1.4
ꢀ
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = ꢀ mA
VR = ꢀ V
IR
µA
pF
nA
Ct
V = 0 V, f = 1 MHz
ꢁ0
Collector to Emitter Dark
Current
Transistor
Coupled
ICEO
IF = 0 mA, VCE = 120 V
100
400
Current Transfer Ratio
(IC/IF)*1
CTR
IF = ꢀ mA, VCE = ꢀ V
IF = 1 mA, VCE = ꢀ V
IF = 10 mA, IC = 2 mA
ꢀ0
10
1ꢀ0
80
%
V
Collector Saturation
Voltage
VCE (sat)
0.ꢁ
Isolation Resistance
RI-O
CI-O
tr
VI-O = 1 kVDC
1011
Ω
Isolation Capacitance
Rise Time *2
V = 0 V, f = 1 MHz
0.4
10
10
pF
µs
VCC = ꢀ V, IC = 2 mA, RL = 1 kΩ
Fall Time *2
tf
*1 CTR rank
CTR rank
K
CTR (%)
200 to 400
80 to
Conditions
IF = ꢀ mA, VCE = ꢀ V
IF = 1 mA, VCE = ꢀ V
IF = ꢀ mA, VCE = ꢀ V
IF = 1 mA, VCE = ꢀ V
IF = ꢀ mA, VCE = ꢀ V
IF = 1 mA, VCE = ꢀ V
L
100 to ꢁ00
2ꢀ to
M
ꢀ0 to 1ꢀ0
10 to
*2 Test circuit for switching time
I
F
Pulse Input
PW = 100
V
CC
µ
s
Duty Cycle = 1/10
In monitor
V
OUT
ꢀ0 Ω
R
L
= 1 kΩ
5
Data Sheet PN10242EJ02V0DS
PS2703-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
7ꢀ
200
1ꢀ0
100
ꢀ0
1.ꢀ mW/˚C
ꢀ0
2ꢀ
0
2ꢀ
ꢀ0
7ꢀ
100
0
2ꢀ
ꢀ0
7ꢀ
(˚C)
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
10
ꢀ mA
4 mA
8
6
4
2
T
A
= +100 ˚C
+7ꢀ ˚C
= 10 mA
IF
+ꢀ0 ˚C
ꢁ mA
2 mA
1
+2ꢀ ˚C
0 ˚C
–2ꢀ ˚C
–ꢀꢀ ˚C
0.1
1 mA
0.ꢀ mA
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
ꢀ0 000
10
IF = 2ꢀ mA
10 mA
ꢀ mA
10 000
ꢀ 000
ꢀ
2.ꢀ mA
1 000
ꢀ00
V
CE = 40 V
24 V
1.ꢀ mA
1 mA
100
ꢀ0
10 V
1
10
ꢀ
0.ꢀ
0.ꢀ mA
1
0.ꢀ
0.1
0.1
–60 –40 –20
0
20
40
60 80 100
(˚C)
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
Collector Saturation Voltage VCE (sat) (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10242EJ02V0DS
PS2703-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.2
1.0
0.8
0.6
ꢁ00
2ꢀ0
200
1ꢀ0
100
V
CE = ꢀ V
0.4
0.2
0.0
Normalized to 1.0
ꢀ0
0
at T
= ꢀ mA, VCE = ꢀ V
ꢀ0 7ꢀ
A
= 2ꢀ ˚C,
I
F
–ꢀꢀ
–2ꢀ
0
2ꢀ
100
10 k
100
0.1
0.ꢀ
1
ꢀ
10
ꢀ0
ꢀ00
106
Ambient Temperature T (˚C)
A
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
100
10
1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
CC = ꢀV,
= 2 mA
t
f
I
C
t
r
µ
R
L
= 1 kΩ
ꢀ10 Ω
ꢁ00 Ω
100 Ω
t
t
d
s
0.1
10
100
1 k
(Ω)
0.ꢀ
1
ꢀ
10
ꢀ0 100
Load Resistance R
L
Frequency f (kHz)
SWITCHING TIME vs.
LOAD RESISTANCE
LONG TIME CTR DEGRADATION
1 000
1.2
1.0
I
F
= ꢀ mA, VCC = ꢀ V,
CTR = 90 %
t
f
100
µ
0.8
0.6
I
I
I
I
F
F
F
F
= 1 mA,
= ꢀ mA,
= 20 mA, T
= 20 mA, T
T
T
A
A
A
A
= 2ꢀ ˚C
= 2ꢀ ˚C
= 2ꢀ ˚C
= 60 ˚C
t
s
10
1
t
r
0.4
0.2
0.0
t
d
1
10
1
102
10ꢁ
104
10ꢀ
0.1
Load Resistance R (kΩ)
L
Time (Hr)
Remark The graphs indicate nominal characteristics.
7
Data Sheet PN10242EJ02V0DS
PS2703-1
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0 0.0ꢀ
4.0 0.1
+0.1
–0
2.9 MAX.
1.ꢀ
1.ꢀꢀ 0.1
2.4 0.1
0.ꢁ
4.6 0.1
8.0 0.1
Tape Direction
PS270ꢁ-1-F4
PS270ꢁ-1-Fꢁ
Outline and Dimensions (Reel)
2.0 0.ꢀ
2.0 0.ꢀ
1ꢁ.0 0.2
φ
φ
R 1.0
φ
φ
φ
21.0 0.8
1ꢁ.ꢀ 1.0
17.ꢀ 1.0
11.9 to 1ꢀ.4
Outer edge of
flange
Packing: ꢁ ꢀ00 pcs/reel
8
Data Sheet PN10242EJ02V0DS
PS2703-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
10 seconds or less
• Time of peak reflow temperature
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120 ꢁ0 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120 ꢁ0 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
• Time (each pins)
ꢁꢀ0°C or below
ꢁ seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.ꢀ to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
9
Data Sheet PN10242EJ02V0DS
PS2703-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
10
Data Sheet PN10242EJ02V0DS
PS2703-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Application classification (DIN VDE 0109)
Symbol
Speck
Unit
for rated line voltages ≤ ꢁ00 Vr.m.s.
IV
III
for rated line voltages ≤ 600 Vr.m.s.
Climatic test class (DIN IEC 68 Teil 1/09.80)
Dielectric strength maximum operating isolation voltage.
Test voltage (partial discharge test procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < ꢀ pC
ꢀꢀ/100/21
UIORM
Upr
710
8ꢀ0
Vpeak
Vpeak
Vpeak
Test voltage (partial discharge test procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < ꢀ pC
Upr
1 140
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
6 000
Vpeak
2
> ꢀ
mm
mm
Creepage distance
> ꢀ
Comparative tracking index (DIN IEC 112/VDE 0ꢁ0ꢁ part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
17ꢀ
III a
Tstg
TA
–ꢀꢀ to +1ꢀ0
–ꢀꢀ to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = ꢀ00 V dc at TA = 2ꢀ °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = ꢀ00 V dc at TA MAX. at least 100 °C
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature
Tsi
Isi
1ꢀ0
200
ꢁ00
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = ꢀ00 V dc at TA = 17ꢀ °C (Tsi)
Ris MIN.
109
Ω
11
Data Sheet PN10242EJ02V0DS
PS2703-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
•
The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
12
Data Sheet PN10242EJ02V0DS
PS2703-1
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-4ꢁꢀ-1ꢀ7ꢁ FAX: +81-44-4ꢁꢀ-1ꢀ79
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +8ꢀ2-ꢁ107-7ꢁ0ꢁ
TEL: +886-2-8712-0478 FAX: +886-2-2ꢀ4ꢀ-ꢁ8ꢀ9
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TEL: +1-408-988-ꢁꢀ00 FAX: +1-408-988-0279
http://www.cel.com/
0ꢀ04
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