PS2733-1-V-F3 [NEC]
Darlington Output Optocoupler, 1-Element, 2500V Isolation, SOP-4;型号: | PS2733-1-V-F3 |
厂家: | NEC |
描述: | Darlington Output Optocoupler, 1-Element, 2500V Isolation, SOP-4 输出元件 光电 |
文件: | 总12页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
PHOTOCOUPLER
PS2732-1,PS2733-1
HIGH COLLECTOR TO EMITTER VOLTAGE
SOP MULTI PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington-connected phototransistor.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.
It is designed for high density mounting applications.
FEATURES
•
•
High isolation voltage (BV = 2 500 Vr.m.s.)
High collector to emitter voltage (VCEO = 300 V: PS2732-1)
(VCEO = 350 V: PS2733-1)
•
•
•
•
•
SOP (Small Outline Package) type
High current transfer ratio (CTR = 4 000 % TYP.)
Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4
UL approved: File No. E72422 (S)
VDE0884 approved (Option)
APPLICATIONS
•
•
•
Hybrid IC
Telephone/Telegraph Receiver
FAX
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
Standard products
PS2732-1, PS2733-1
4-pin SOP
• UL approved
PS2732-1-V, PS2733-1-V
4-pin SOP
VDE0884 approved products (Option)
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10248EJ01V0DS (1st edition)
The mark • shows major revised points.
(Previous No. P11312EJ3V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1994, 2003
PS2732-1,PS2733-1
PACKAGE DIMENSIONS (in millimeters)
PS2732-1
PS2733-1
4.0±0.5
TOP VIEW
4
1
3
1. Anode
2. Cathode
3. Emitter
4. Collector
2
7.0±0.3
4.4
2.54
0.5±0.3
+0.10
0.4
0.25 M
–0.05
2
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
PS2732-1
PS2733-1
Diode
Forward Current (DC)
Reverse Voltage
IF
VR
50
6
mA
V
Power Dissipation Derating
Power Dissipation
∆PD/°C
PD
0.8
80
1
mW/°C
mW
A
Peak Forward Current*1
IFP
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
300
350
V
0.3
150
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.5
mW/°C
mW
Vr.m.s.
°C
150
Isolation Voltage*2
BV
2 500
Operating Ambient Temperature
Storage Temperature
TA
–55 to +100
–55 to +150
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.15
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 10 mA
VR = 5 V
IR
µA
pF
nA
Ct
V = 0 V, f = 1 MHz
30
Transistor Collector to Emitter
Dark Current
ICEO
IF = 0 mA, VCE = 300 V
400
1.0
Coupled
Current Transfer Ratio
(IC/IF)
CTR
IF = 1 mA, VCE = 2 V
IF = 1 mA, IC = 2 mA
1 500
4 000
%
V
Collector Saturation
Voltage
VCE (sat)
Isolation Resistance
Isolation Capacitance
Rise Time *1
RI-O
CI-O
tr
VI-O = 1 kVDC
1011
Ω
V = 0 V, f = 1 MHz
0.4
100
100
pF
µs
VCC = 5 V, IC = 10 mA, RL = 100 Ω
Fall Time *1
tf
*1 Test circuit for switching time
Pulse Input
V
CC
PW = 1 ms
Duty cycle = 1/10
IF
V
OUT
50 Ω
RL = 100 Ω
4
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
75
150
100
50
1.5 mW/˚C
50
25
0
25
50
75
(˚C)
100
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
100
10
V
CE = 300 V
1 000
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
100
10
1
1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
0.1
0.1
0.01
–25
25
0.6
0.8
1.0
1.2
1.4
1.6
–50
0
50
75
100
Forward Voltage V
F
(V)
Ambient Temperature T (˚C)
A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
160
140
120
100
80
1 000
5 mA
4.5 mA
4 mA
I
F
= 5 mA
3.5 mA
100
3 mA
2 mA
1 mA
2.5 mA
2 mA
0.5 mA
10
1
1.5 mA
1 mA
60
40
20
I
F
= 0.5 mA
4
0.1
3
5
0.5 0.6 0.7 0.8 0.9 1.0
0
1
2
1.1 1.2
Collector to Emitter Voltage VCE (V)
Collector Saturation Voltage VCE (sat) (V)
5
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
5 000
4 000
3 000
2 000
1.2
1.0
0.8
0.6
0.4
0.2
0
Sample A
V
CE = 2 V
Sample B
Normalized to 1.0
1 000
0
at T = 25 ˚C,
A
IF = 1 mA, VCE = 2 V
–50
–25
0
25
50
75
0.1
0.5
1
5
10
20
100
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
300
VCC = 10 V,
t
r
R = 10 Ω
L
I
C
= 10 mA
0
–5
100
50
µ
100 Ω
1 kΩ
t
d
–10
–15
–20
–25
–30
t
f
10
5
V
CE = 4 V,
I
C
= 10 mA,
V
in = 0.1 Vp-p
1 kΩ
1
t
s
µF
47
Ω
1
V
out
Vin
RL
20
2 k
50
100
500
(Ω)
1 k
0.01
0.1
1
10
100
Load Resistance R
L
Frequency f (kHz)
LONG TERM CTR DEGRADATION
1.2
1.0
0.8
0.6
0.4
I = 1 mA
F
T = 25 ˚C
A
T = 60 ˚C
A
0.2
0
102
105
106
10
104
103
Time (Hr)
Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
6
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.05
4.0±0.1
+0.1
–0
2.9 MAX.
1.5
1.55±0.1
2.4±0.1
0.3
4.6±0.1
8.0±0.1
Tape Direction
PS2732-1-F4
PS2733-1-F4
PS2732-1-F3
PS2733-1-F3
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
φ
φ
R 1.0
φ
φ
φ21.0±0.8
13.5±1.0
17.5±1.0
11.9 to 15.4
Outer edge of
flange
Packing: 3 500 pcs/reel
7
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
• Time of temperature higher than 220°C
10 seconds or less
60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows
• Flux
Three
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
• Time
260°C or below (molten solder temperature)
10 seconds or less
• Preheating conditions
• Number of times
• Flux
120°C or below (package surface temperature)
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
8
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
9
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Application classification (DIN VDE 0109)
Symbol
Speck
Unit
for rated line voltages ≤ 150 Vr.m.s.
IV
III
for rated line voltages ≤ 300 Vr.m.s.
Climatic test class (DIN IEC 68 Teil 1/09.80)
Dielectric strength
55/100/21
Maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
710
850
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC
Upr
1 140
Vpeak
Highest permissible overvoltage
Degree of pollution (DIN VDE 0109)
Clearance distance
UTR
4 000
Vpeak
2
> 5
mm
mm
Creepage distance
> 5
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
Material group (DIN VDE 0109)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +150
–55 to +100
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100 °C
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature
Tsi
Isi
150
300
500
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
Psi
VIO = 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
109
Ω
10
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
•
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
11
Data Sheet PN10248EJ01V0DS
PS2732-1,PS2733-1
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309
NEC Electronics (Europe) GmbH
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
相关型号:
PS2733-1-V-F3-A
Darlington Output Optocoupler, 1-Element, 2500V Isolation, LEAD FREE, PLASTIC, SOP-4
NEC
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