PS2861-1-F3-A [NEC]
Transistor Output Optocoupler, 1-Element, 2500V Isolation, PLASTIC, SOP-4;
| 型号： | PS2861-1-F3-A |
| 厂家： | 
NEC |
| 描述： | Transistor Output Optocoupler, 1-Element, 2500V Isolation, PLASTIC, SOP-4 |
| 文件： | 总10页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
PHOTOCOUPLER
PS2861-1
HIGH ISOLATION VOLTAGE
4-PIN SOP PHOTOCOUPLER
−NEPOC Series−
DESCRIPTION
The PS2861-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The PS2861-1 meets insulation thickness 0.4 mm and BSI′s insulation supplementary approved.
The package has shield effect to cut off ambient light, and is mounted in a plastic SOP (Small Outline Package)
for high density applications.
FEATURES
•
•
•
•
•
•
Isolation distance (0.4 mm MIN.)
High isolation voltage (BV = 2 500 Vr.m.s.)
SOP (Small Outline Package) type
High-speed switching (tr = 4 µs TYP., tf = 5 µs TYP.)
Ordering number of tape product: PS2861-1-F3, F4
Safety standards: PS2861-1
•
•
UL approved: File No. E72422 (S)
BSI approved: No. 8514, 8515
APPLICATIONS
•
•
•
Modem
Programmable logic controllers
Power supply
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10258EJ01V0DS (1st edition)
(Previous No. P15093EJ2V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
NEC Compound Semiconductor Devices 2000, 2003
PS2861-1
PACKAGE DIMENSIONS (UNIT: mm)
TOP VIEW
2.7±0.3
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.0±0.3
4.4
0.5±0.3
1.27
M
0.4±0.1 0.12
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Unit (MIN.)
4.5 mm
Creepage Distance
Isolation Distance
4.5 mm
0.4 mm
MARKING
PS2861-1
N61
Assembly Lot
003
Last number of type: 61
"N" of NEC
0 03
Week Assembled
Year Assembled
(Last 1 Digit)
2
Data Sheet PN10258EJ01V0DS
PS2861-1
ORDERING INFORMATION
Application Part Number*1
PS2861-1
Part Number
PS2861-1
Package
Packing Style
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500 pcs/reel
4-pin SOP
PS2861-1-F3
PS2861-1-F4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
Unit
mA
Diode
Forward Current (DC)
Reverse Voltage
50
VR
6
V
Power Dissipation Derating
∆PD/°C
PD
0.6
mW/°C
mW
A
Power Dissipation
60
Peak Forward Current*1
IFP
1.0
Transistor Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
40
V
5
40
V
mA
Power Dissipation Derating
Power Dissipation
∆PC/°C
PC
1.2
mW/°C
mW
Vr.m.s.
°C
120
Isolation Voltage*2
BV
2 500
Operating Ambient Temperature
Storage Temperature
TA
–55 to +100
–55 to +150
Tstg
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
3
Data Sheet PN10258EJ01V0DS
PS2861-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
VF
Conditions
MIN.
TYP.
1.1
MAX.
1.4
5
Unit
V
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
IF = 5 mA
VR = 5 V
IR
µA
pF
nA
Ct
V = 0 V, f = 1 MHz
15
Transistor Collector to Emitter Dark
Current
ICEO
IF = 0 mA, VCE = 40 V
100
400
0.3
Coupled
Current Transfer Ratio
(IC/IF) *1
CTR
IF = 5 mA, VCE = 5 V
IF = 10 mA, IC = 2 mA
50
200
%
V
Collector Saturation
Voltage
VCE (sat)
Isolation Resistance
Isolation Capacitance
Rise Time*2
RI-O
CI-O
tr
VI-O = 1 kVDC
1011
Ω
V = 0 V, f = 1 MHz
0.4
4
pF
µs
VCC = 5 V, IC = 2 mA, RL = 100 Ω
Fall Time*2
tf
5
*1 CTR rank
K: 200 to 400 (%)
L: 100 to 300 (%)
M: 50 to 150 (%)
N: 50 to 400 (%)
*2 Test circuit for switching time
Pulse Input
V
V
CC
PW = 100 µs
Duty cycle = 1/10
I
F
In monitor
OUT
50 Ω
RL = 100 Ω
4
Data Sheet PN10258EJ01V0DS
PS2861-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
80
60
40
20
210
180
150
120
90
60
30
25
50
75
100
0
25
50
Ambient Temperature T
75
100
0
A
(˚C)
Ambient Temperature T
A
( ˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
20
100
10
1
I
F
= 25 mA
20 mA
15 mA
T
A
= +100 ˚C
+60 ˚C
10 mA
+25 ˚C
15
10
5
0 ˚C
–25 ˚C
–50 ˚C
5 mA
0.1
0.01
0.0
0.5
1.0
1.5
(V)
2.0
0
2
4
6
8
10
Forward Voltage V
F
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
100
10 mA
5 mA
2 mA
1 000
100
10
V
CE = 20 V
40 V
1
IF = 1mA
10
1
0.1
0.0
–25
0
25
50
75
100
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage VCE(sat) (V)
5
Data Sheet PN10258EJ01V0DS
PS2861-1
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
400
350
300
250
200
150
100
V
n = 3
CE = 5 V,
Sample A
B
C
Normalized to 1.0
at T
A
= 25 ˚C,
50
0
I
F
= 5 mA, VCE = 5 V
0.1
1
10
(mA)
100
–50
–25
0
25
50
75
(˚C)
100
Ambient Temperature T
A
Forward Current I
F
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
100
1 000
I = 1 mA,
F
I = 2 mA,
C
tf
VCC = 5 V,
VCC = 5 V,
CTR = 200 %
CTR = 200 %
100
µ
µ
ts
t
f
10
10
tr
tr
td
td
1
t
s
0.1
10
1
10
100
1 k
10 k
(Ω)
10 k
100 k
100
1 k
(Ω)
Load Resistance R
L
Load Resistance R
L
FREQUENCY RESPONSE
LONG TERM CTR DEGRADATION
1.2
1.0
I = 5 mA
F
0
–5
0.8
0.6
I
I
I
I
F
F
F
F
= 1 mA,
= 5 mA,
= 20 mA, T
= 20 mA, T
T
T
A
A
A
A
= 25 ˚C
= 25 ˚C
= 25 ˚C
= 60 ˚C
100 Ω
300 Ω
R = 1 kΩ
L
–10
–15
–20
–25
0.4
0.2
0.0
106
0.1
1
10
100
1 000
1
102
103
104
105
Frequency f (kHz)
Time (Hr)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10258EJ01V0DS
PS2861-1
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0±0.1
+0.1
1.5
–0
4.0±0.1
φ
2.8 MAX.
0.3
1.55±0.1
4.0±0.1
2.3±0.1
2.85±0.1
Tape Direction
PS2861-1-F3
PS2861-1-F4
Outline and Dimensions (Reel)
2.0±0.5
2.0±0.5
13.0±0.2
φ
φ
R 1.0
φ
φ21.0±0.8
17.5±1.0
21.5±1.0
15.9 to 19.4
Outer edge of
flange
Packing: 3 500 pcs/reel
7
Data Sheet PN10258EJ01V0DS
PS2861-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
• Time of temperature higher than 210 °C
• Number of reflows
235 °C or below (package surface temperature)
30 seconds or less
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
100 to 160 ˚C
60 to 120 s
(preheating)
Time (s)
(2) Dip soldering
• Temperature
• Time
260 °C or below (molten solder temperature)
10 seconds or less
• Number of times
• Flux
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
8
Data Sheet PN10258EJ01V0DS
PS2861-1
•
The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4-0110
9
Data Sheet PN10258EJ01V0DS
PS2861-1
SAFETY INFORMATION ON THIS PRODUCT
The product contains gallium arsenide, GaAs.
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
FAX: +852-3107-7309
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California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302
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