RD3.9MB1 [NEC]
Zener Diode, 3.835V V(Z), 3.52%, 0.2W, Silicon, Unidirectional, PLASTIC, SC-59, 3 PIN;
| 型号： | RD3.9MB1 |
| 厂家： | 
NEC |
| 描述： | Zener Diode, 3.835V V(Z), 3.52%, 0.2W, Silicon, Unidirectional, PLASTIC, SC-59, 3 PIN 测试 光电二极管 |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
ZENER DIODES
RD2.0M to RD47M
ZENER DIODES
200 mW 3-PIN MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
Type RD2.0M to RD47M Series are planar type zener diodes
processing an allowable power dissipation of 200 mW.
(Unit: mm)
2.8 ± 0.2
FEATURES
+0.1
–0.15
0.65
1.5
• Planar process
• VZ; Applied E24 standard.
2
1
APPLICATIONS
Circuits for,
3
Constant Voltage, Constant Current,
Waveform clipper, Surge absorber, etc.
Marking
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P
200 mW
Forward Current
IF
150 mA
Junction Temperature
Storage Temperature
Peak Reverse Power
Tj
150°C
Tstg
PRSM
–55 to +150°C
100 W (t = 10 µs)
1 . NC
2 . Anode : A SC-59 (EIAJ)
3 . Cathode: K
A
2
K
3
1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D14716EJ6V0DS00 (6th edition)
(Previous No. DC-2141)
Date Published June 2000 N CP(K)
Printed in Japan
1995
©
RD2.0M to RD47M
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2°C)
Zener Voltage
Type
Dynamic Impedance
Reverse Current
VZ (V)Note 1
MAX.
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
ZZ (Ω)Note 2
IR (µA)
Class
Number
MIN.
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.01
4.01
4.15
4.28
4.42
4.42
4.55
4.69
4.84
4.84
4.98
5.14
5.31
5.31
5.49
5.67
5.86
5.86
6.06
6.26
6.47
6.47
6.65
6.86
7.06
7.06
7.28
7.52
7.76
7.76
8.02
8.28
IZ (mA)
MAX.
100
100
IZ (mA)
MAX.
120
VR (V)
0.5
RD2.0M
RD2.2M
RD2.4M
B
B
B
B
5
5
5
5
5
5
120
0.7
100
120
1.0
RD2.7M
RD3.0M
RD3.3M
RD3.6M
RD3.9M
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
5
5
5
5
5
110
120
130
130
130
5
5
5
5
5
120
50
1.0
1.0
1.0
1.0
1.0
20
10
10
RD4.3M
RD4.7M
RD5.1M
RD5.6M
RD6.2M
RD6.8M
RD7.5M
RD8.2M
5
5
5
5
5
5
5
5
130
130
130
80
5
5
5
5
5
5
5
5
10
10
5
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
5
50
2
30
2
30
2
B1
B2
B3
30
2
2
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
Zener Voltage
VZ (V)Note 1
Dynamic Impedance
ZZ (Ω)Note 2
Reverse Current
Type
Number
IR (µA)
Class
MIN.
8.56
8.56
8.85
9.15
9.45
9.45
9.77
MAX.
9.55
8.93
9.23
9.55
IZ (mA)
5
MAX.
IZ (mA)
MAX.
VR (V)
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B1
B2
B3
B
B
B
B
B
B
B
RD9.1M
RD10M
RD11M
RD12M
RD13M
RD15M
RD16M
RD18M
RD20M
RD22M
RD24M
30
30
30
35
35
40
40
45
50
55
60
5
2
6.0
10.55
9.87
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
7.0
8.0
9.0
10
11
12
13
15
17
19
10.21
10.55
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
15.52
14.46
14.98
15.52
17.09
16.01
16.51
17.09
19.03
17.70
18.35
19.03
21.08
19.70
20.39
21.08
23.17
21.77
22.47
23.17
25.57
23.96
24.78
25.57
28.90
32.00
35.00
38.00
41.00
45.0
10.11
10.44
10.44
10.76
11.10
11.42
11.42
11.74
12.08
12.47
12.47
12.91
13.37
13.84
13.84
14.34
14.85
15.37
15.37
15.85
16.35
16.94
16.94
17.56
18.21
18.86
18.86
19.52
20.21
20.88
20.88
21.54
22.23
22.93
22.93
23.72
24.54
25.10
28.00
31.00
34.00
37.00
40.0
RD27M
RD30M
RD33M
RD36M
RD39M
RD43M
RD47M
2
2
2
2
2
2
2
70
80
80
2
2
2
2
2
2
2
2
2
2
2
2
2
2
21
23
25
27
30
33
36
90
100
130
150
44.0
49.0
Note 1. Tested with pulse (40 ms).
2. ZZ is measured at IZ by given a very small A.C. current signal.
3
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
TYPICAL CHARACTERISTICS (TA = 25°C)
Fig. 1 P–TA RATING
250
200
150
100
50
0
25
50
75
100
125
150
T
A
- Ambient Temperature - °C
Fig. 2 IZ – VZ CHARACTERISTICS (a to e)
RD2.0M
RD2.2M
RD5.6M RD6.2M
RD8.2M RD9.1M
100 m
10 m
1 m
100 m
10 m
1 m
RD11M
RD12M
RD2.4M
RD2.7M
RD3.0M
RD10M
RD3.3M
RD13M
100 µ
10 µ
1 µ
100 µ
10 µ
1 µ
100 n
10 n
1 n
100 n
10 n
1 n
RD3.3M
RD3.6M
RD5.1M
RD4.7M
RD4.3M
RD6.8M RD7.5M
0
1
2
3
4
5
6
7
8
9
10
0
7
8
9
10 11 12 13 14 15
VZ
- Zener Voltage - V
(a)
VZ
- Zener Voltage - V
(b)
100 m
10 m
1 m
100 m
10 m
1 m
RD18M
RD16M
RD20M
RD24M
RD27M
RD15M
RD22M
RD30M
100 µ
10 µ
1 µ
100 µ
10 µ
1 µ
100 n
10 n
1 n
100 n
10 n
1 n
11 12 13 14 15 16 17 18 19 20
0 15
20
22
24
25
28
30
VZ
- Zener Voltage - V
(c)
VZ
- Zener Voltage - V
(d)
4
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
100 m
10 m
1 m
RD32M RD36M
RD43M
RD47M
RD39M
100 µ
10 µ
1 µ
100 n
10 n
1 n
0 15
30
35
40
VZ
- Zener Voltage - V
(e)
γZ - VZ CHARACTERISTICS
Fig. 3
Fig. 4 ZZ - IZ CHARACTERISTICS
1000
100
10
TYP.
TYP.
0.1
0.08
0.06
0.04
40
32
RD2.0M
%/°C
RD5.6M
RD2.4M
RD3.0M
RD3.9M
RD39M
RD24M
24
16
RD4.7M
RD5.1M
mV/°C
RD20M
RD15M
0.02
0
8
0
–8
–0.02
–0.04
–0.06
–16
RD10M
RD7.5M
–24
1
0.1
4
8
12 16 20 24 28 32 36 40 44
1
10
100
VZ
- Zener Voltage - V
I
Z
- Zener Current - mA
5
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
Fig. 5 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1000
100
10
625°C/W
1
0.1
1 m
10 m
100 m
1
10
100
t – Time – s
FIG. 6 SURGE REVERSE POWER RATINGS
10000
1000
100
T
A
= 25°C
Repetitive
t
T
10
1
1 µ
10 µ
100 µ
1 m
10 m
100 m
t – Pulse Width – s
6
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
[MEMO]
7
Data Sheet D14716EJ6V0DS00
RD2.0M to RD47M
[MEMO]
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated “quality assurance program“ for a specific application. The recommended applications of
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before using it in a particular application.
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support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98.8
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