RD9.1SB2 [NEC]
Zener Diode, 9.035V V(Z), 2.49%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2;型号: | RD9.1SB2 |
厂家: | NEC |
描述: | Zener Diode, 9.035V V(Z), 2.49%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2 |
文件: | 总10页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
ZENER DIODES
RD2.0S to RD120S
ZENER DIODES
200 mW 2 PIN SUPER MINI MOLD
PACKAGE DIMENSIONS
DESCRIPTION
(in millimeter)
Type RD2.0S to RD120S series are 2 pin super mini
mold package zener diodes possessing an allowable
power dissipation of 200 mW.
2.5±0.15
1.7±0.1
FEATURES
• Sharp breakdown characteristic.
Z
• V : Applied E24 standard.
Cathode
Indication
APPLICATIONS
Circuit for constant voltage, constant current, wave form
clipper, surge absorver, etc.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
P
200
100
mW
mA
W
F
Forward Current
I
RSM
Reverse Surge Power
Junction Temperature
Storage Temperature
P
85
(at t = 10 µs/ 1 pulse) Show Fig.12
j
T
150
°C
stg
T
–55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published March 2002 NS CP(K)
Printed in Japan
D11444EJ4V0DS00 (4th edition)
The mark ★ shows major revised points.
1995
©
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ±2°C)
Type Number
Class
Zener Voltage
VZ (V) Note1
MAX.
Dynamic Impedance
Reverse Current
ZZ (Ω) Note2
IR (µA)
MIN.
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.00
4.00
4.14
4.27
4.40
4.40
4.53
4.67
4.82
4.82
4.96
5.12
5.29
5.29
5.47
5.65
5.84
5.84
6.04
6.24
IZ (mA)
MAX.
100
100
100
110
IZ (mA)
MAX.
120
120
120
120
VR (V)
0.5
RD2.0S
RD2.2S
RD2.4S
RD2.7S
B
B
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.49
4.22
4.35
4.49
4.92
4.63
4.77
4.92
5.39
5.06
5.22
5.39
5.94
5.57
5.75
5.94
6.55
6.14
6.35
6.55
5
5
5
5
5
5
5
5
0.7
B
1.0
B
1.0
B1
B2
B
RD3.0S
RD3.3S
RD3.6S
RD3.9S
RD4.3S
5
5
5
5
5
120
130
130
130
130
5
5
5
5
5
50
20
10
10
10
1.0
1.0
1.0
1.0
1.0
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B
B1
B2
B3
B
RD4.7S
RD5.1S
RD5.6S
RD6.2S
5
5
5
5
130
130
80
5
5
5
5
10
1.0
1.5
2.5
3.0
B1
B2
B3
B
5
B1
B2
B3
B
5
B1
B2
B3
B
50
2
B1
B2
B3
2
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ±2°C)
Type Number
Class
Zener Voltage
VZ (V) Note1
MAX.
Dynamic Impedance
Reverse Current
ZZ (Ω) Note2
IR (µA)
MIN.
6.44
IZ (mA)
5
MAX.
30
IZ (mA)
5
MAX.
2
VR (V)
3.5
RD6.8S
B
B1
B2
B3
B
7.17
6.76
6.44
6.62
6.96
6.83
7.17
RD7.5S
RD8.2S
RD9.1S
RD10S
RD11S
RD12S
7.03
7.87
5
5
5
5
5
5
30
30
30
30
30
35
5
5
5
5
5
5
2
2
2
2
2
2
4.0
5.0
6.0
7.0
8.0
9.0
B1
B2
B3
B
7.03
7.39
7.25
7.63
7.49
8.67
7.73
8.67
B1
B2
B3
B
7.73
8.13
7.98
8.39
8.25
8.67
8.53
9.58
B1
B2
B3
B
8.53
8.96
8.81
9.26
9.12
9.58
9.42
10.58
9.90
B1
B2
B3
B
9.42
9.74
10.24
10.58
11.60
10.92
11.26
11.60
12.64
11.94
12.28
12.64
14.00
15.56
17.14
19.08
21.14
23.25
25.66
28.90
32.00
35.00
38.00
10.08
10.40
10.40
10.72
11.06
11.38
11.38
11.69
12.04
12.43
13.80
15.31
16.89
18.80
20.81
22.86
25.10
28.00
31.00
34.00
B1
B2
B3
B
B1
B2
B3
B
RD13S
RD15S
RD16S
RD18S
RD20S
RD22S
RD24S
RD27S
RD30S
RD33S
RD36S
5
5
5
5
5
5
5
2
2
2
2
35
40
40
45
50
55
60
70
80
80
90
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
10
11
12
13
15
17
19
21
23
25
27
B
B
B
B
B
B
B
B
B
B
3
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ±2°C)
Type Number
Class
Zener Voltage
VZ (V) Note1
MAX.
Dynamic Impedance
Reverse Current
ZZ (Ω) Note2
IR (µA)
MIN.
37.00
40.00
44.00
48.00
53.00
58.00
64.00
70.00
77.00
85.00
94.00
104.00
114.00
IZ (mA)
MAX.
100
130
150
180
180
200
250
300
300
700
700
800
900
IZ (mA)
MAX.
2
VR (V)
30
RD39S
RD43S
RD47S
RD51S
RD56S
RD62S
RD68S
RD75S
RD82S
RD91S
RD100S
RD110S
RD120S
B
B
B
B
B
B
B
B
B
B
B
B
B
41.00
45.00
49.00
54.00
60.00
66.00
72.00
79.00
87.00
96.00
106.0
116.00
126.00
2
2
2
2
2
2
2
2
2
1
1
1
1
2
2
2
2
2
2
2
2
2
1
1
1
1
2
33
2
36
1
39
1
43
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
47
52
57
63
69
76
84
91
Z
Note1. V is tested with pulsed (40 ms).
Z
Z
2. Z is measured at I by given a very small A.C. current signal.
4
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
TYPICAL CHARACTERISTICS (TA = 25°C)
Fig.1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
200
150
100
50
30 × 30 × 1.6
P. C. B. (Glass Epoxy)
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature - ˚C
Fig.2 ZENER CURRENT vs. ZENER VOLTAGE
Fig.3 ZENER CURRENT vs. ZENER VOLTAGE
RD2.2S
RD6.8S
RD2.0S
T
A
= 25˚C
RD7.5S
TYP.
RD2.4S
RD8.2S
100 m
10 m
1 m
100 m
10 m
1 m
RD2.7S
RD3.0S
RD3.3S
RD3.6S
RD3.9S
RD11S
RD9.1S
RD10S
RD12S
RD13S
100
10
1
µ
µ
µ
100
10
1
µ
µ
µ
100 n
100 n
RD4.3S
RD4.7S
RD5.1S
RD5.6S
10 n
1 n
10 n
1 n
RD6.2S
0
1
2
3
4
5
6
7
8
9
10
0
7
8
9
10 11 12 13 14 15
VZ - Zener Voltage - V
Vz - Zener Voltage - V
5
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
Fig.4 ZENER CURRENT vs. ZENER VOLTAGE
Fig.5 ZENER CURRENT vs. ZENER VOLTAGE
TA = 25˚C
TYP.
T
A
= 25˚C
TYP.
100 m
10 m
1 m
100 m
10 m
1 m
RD27S
RD24S
RD30S
RD15S
RD16S
RD22S
RD18S
RD20S
100
10
1
µ
µ
µ
100
10
1
µ
µ
µ
100 n
100 n
10 n
1 n
10 n
1 n
0
12 13 14 15 16 17 18 19 20
Vz - Zener Voltage - V
0
16 18 20 22 24 26 28 30 32
Vz - Zener Voltage - V
★
Fig.6 ZENER CURRENT vs. ZENER VOLTAGE
Fig.7 ZENER CURRENT vs. ZENER VOLTAGE
TA = 25˚C
TYP.
T
A
= 25˚C
TYP.
100 m
10 m
1 m
100 m
10 m
1 m
RD68S
RD62S
RD56S
RD47S
RD82S
RD91S
RD100S
RD110S
RD120S
RD33S
RD36S
RD75S
RD43S
RD39S
µ
µ
µ
100
10
1
100
10
1
µ
µ
µ
100 n
10 n
1 n
100 n
10 n
1 n
0
30
35
40
0 30
60
90
120
Vz - Zener Voltage - V
Vz - Zener Voltage - V
6
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
Fig.8 DYNAMIC IMPEDANCE vs. ZENER CURRENT
1000
RD2.0S
RD2.4S
RD3.0S
RD3.9S
RD5.6S
RD39S
RD24S
RD20S
RD15S
RD10S
100
RD4.7S
RD5.1S
10
1
RD7.5S
0.1
1
10
100
I
Z
- Zener Current - mA
Fig.9 ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Fig.10 ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
0.12
140
120
TYP.
40
32
24
16
8
0.1
%/˚C
0.11
0.10
0.09
0.08
0.07
0.08
0.06
%/˚C
100
80
60
40
20
0.04
0.02
0
mV/˚C
0
mV/˚C
−8
−0.02
−16
−0.04
−0.06
RD43S to RD120S
RD2.0S to RD39S
−24
γ
γ
0
4
8
12 16 20 24 28 32 36 40
- Zener Voltage - V
0
40 50 60 70 80 90 100 110 120
Vz - Zener Voltage - V
VZ
γ
γ
7
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
Fig.11 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
5000
1000
RD[ ]S
100
P.C.B. (Glass Epoxy)
10
5
(30 mm × 30 mm × 1.6 mm)
1m
10m
100m
1
10
100
t - Time - s
Fig.12 SURGE REVERSE POWER RATINGS
1000
100
T
A
= 25˚C
Repetitive
t
T
10
1
µ
1
µ
10
µ
100
1 m
- Pulse Width - s
10 m
100 m
t
T
8
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
[MEMO]
9
Data Sheet D11444EJ4V0DS
RD2.0S to RD120S
•
The information in this document is current as of March, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号:
RD9.1SLN
Zener Diode, 8.99V V(Z), 5.78%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2
NEC
RD9.1SLN1
Zener Diode, 8.69V V(Z), 2.53%, 0.2W, Silicon, Unidirectional, SUPER MINIMOLD PACKAGE-2
NEC
RD9.1SLN2
8.985V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, SUPER MINIMOLD PACKAGE-2
RENESAS
RD9.1UJN-T1
Zener Diode, 9.1V V(Z), 5.78%, 0.15W, Silicon, Unidirectional, ULTRA SUPER MINIMOLD PACKAGE-2
NEC
©2020 ICPDF网 联系我们和版权申明