UPA1810GR-9JG [NEC]
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING; P沟道MOS场效应晶体管切换
| 型号： | UPA1810GR-9JG |
| 厂家： | 
NEC |
| 描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 文件： | 总8页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1810
µ
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The µPA1810 is a switching device which can be
driven directly by a 2.5 V power source.
8
5
The µPA1810 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
1, 5, 8 :Drain
2, 3, 6, 7:Source
1.2 MAX.
1.0±0.05
4
:Gate
0.25
+5°
–3°
3°
FEATURES
0.5
0.1±0.05
• Can be driven by a 2.5 V power source
• Low on-state resistance
+0.15
–0.1
0.6
1
4
DS(on)1
R
DS(on)2
R
DS(on)3
R
GS
D
= 55 mΩ MAX. (V = –4.5 V, I = –2.0 A)
GS
D
= 60 mΩ MAX. (V = –4.0 V, I = –2.0 A)
6.4 ±0.2
4.4 ±0.1
3.15 ±0.15
3.0 ±0.1
GS
D
= 100 mΩ MAX. (V = –2.5 V, I = –2.0 A)
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
0.65
0.8 MAX.
0.1
µPA1810GR-9JG
Power TSSOP8
+0.03
0.27
0.10 M
–0.08
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
V
V
–12
−10/+5
±4.0
±16
V
V
Drain
GSS
D(DC)
I
A
Body
D(pulse)
I
A
Diode
Gate
T
P
2.0
W
°C
Gate
ch
T
150
Protection
Diode
Source
stg
T
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published June 1999 NS CP(K)
Printed in Japan
D11819EJ1V0DS00 (1st edition)
1996, 1999
©
µ
PA1810
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = –12 V, VGS = 0 V
MIN. TYP. MAX. UNIT
–10
±10
–1.5
µA
µA
V
IGSS
VGS = ±10 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –2.0 A
VGS = –4.5 V, ID = –2.0 A
VGS = –4.0 V, ID = –2.0 A
VGS = –2.5 V, ID = –2.0 A
VDS = –10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
–0.5
2.5
–0.8
8.5
41
Forward Transfer Admittance
Drain to Source On-state Resistance
S
55
60
mΩ
mΩ
mΩ
pF
pF
pF
ns
43
71
100
Input Capacitance
1100
750
240
40
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
Crss
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = –10 V
ID = –2.0 A
100
90
ns
Turn-off Delay Time
Fall Time
VGS(on) = –4.0 V
RG = 5 Ω
ns
70
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG
VDD = –10 V
35
nC
nC
nC
V
QGS
ID = –4.0 A
5
QGD
VF(S-D)
trr
VGS = –4.0 V
16
IF = 4.0 A, VGS = 0 V
0.75
50
IF = 4.0 A, VGS = 0 V
ns
di/dt = 100 A/µS
Qrr
35
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
V
GS
R
L
R
L
90 %
V
GS
Wave Form
VGS(on)
10 %
0
R
G
PG.
PG.
VDD
VDD
50 Ω
R = 10 Ω
G
90 %
I
D
90 %
10 %
I
D
V
0
GS
10 %
I
D
0
Wave Form
t
r
t
d(on)
td(off)
t
f
τ
t
on
toff
τ = 1µ s
Duty Cycle ≤ 1 %
2
Data Sheet D11819EJ1V0DS00
µ
PA1810
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
−100
−10
−1
100
80
60
40
20
ID(pulse)
ID(DC)
−0.1
T
A
= 25 ˚C
Single Pulse
Mounted on Ceramic
2
Substrate of 50cm x 1.1mm
−0.01
−0.1
−10
−100
−1
0
30
60
90
120
150
VDS - Drain to Source Voltage - V
T
A - Ambient Temperature - ˚C
TRANSFER CHARACTERISTICS
DS = −10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−100
−10
−1
V
−1.0
−0.9
VDS = −10 V
ID = −1 mA
−0.8
−0.7
TA
= 125˚C
75˚C
−0.1
−0.01
25˚C
−25˚C
−0.6
−0.5
−0.001
0
−0.5
−1.0
−1.5 −2.0
−2.5 −3.0
150
−50
0
50
100
VGS - Gate to Sorce Voltage - V
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
100
10
1
100
V
DS = −10V
V
GS = −2.5 V
80
T
A
= −25 ˚C
T
A
= 125˚C
75˚C
25 ˚C
75 ˚C
125 ˚C
60
40
20
25˚C
−25˚C
0.1
−0.1
−10
D - Drain Current - A
−100
−1
−1
- Drain Current - A
−10
−100
−0.01
−0.1
I
ID
3
Data Sheet D11819EJ1V0DS00
µ
PA1810
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
80
60
40
20
80
I
D
= −2.0 A
V
GS = −4.0 V
V
GS = −2.5 V
−4.0 V
60
40
20
T
A
= 125˚C
75˚C
25˚C
−25˚C
−1
- Drain Current - A
−10
−100
−0.01
−0.1
−50
0
50
100
150
T
ch - Channel Temperature -˚C
ID
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10000
1000
f = 1MHz
I
D
=
−2.0 A
VGS = 0V
80
Ciss
Coss
60
40
20
C
rss
100
10
−1
−10
DS - Drain to Source Voltage - V
−100
0
−4
−2
−6
−8
−10
V
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
1000
100
10
tr
tf
10
1
td(off)
td(on)
V
V
R
DD = −10 V
on) = −4.0V
= 5 Ω
GS
(
G
0.1
0.4
−0.1
−1
- Drain Current - A
−10
0.6
0.8
1.0
1.2
I
D
V
F(S-D) - Source to Drain Voltage - V
4
Data Sheet D11819EJ1V0DS00
µ
PA1810
DYNAMIC INPUT CHARACTERISTICS
−10
−8
ID = −4.0 A
VDD = −10 V
−6
−4
−2
0
0
10
20
30
40
50
60
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Mounted on ceramic
substrate of50 cm2 x 1.1 mm
Single Pulse
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
100
1000
1
10
PW - Pulse Width - s
5
Data Sheet D11819EJ1V0DS00
µ
PA1810
[MEMO]
6
Data Sheet D11819EJ1V0DS00
µ
PA1810
[MEMO]
7
Data Sheet D11819EJ1V0DS00
µ
PA1810
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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