UPA507TE-T1-AT [NEC]
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5;
| 型号： | UPA507TE-T1-AT |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FET WITH SCHOTTμKYPBAARR5IE0R7DTIODEE
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
+0.1
–0.05
The μ PA507TE is a switching device, which can be driven directly
by a 1.8 V power source.
+0.1
–0.06
0.32
0.16
This device incorporates a MOS FET, which features a low on-state
resistance and excellent switching characteristics and a low forward
voltage Schottky barrier diode, and is suitable for applications such
as DC/DC converter of portable machine and so on.
5
1
4
3
0 to 0.1
2
0.65
0.95 0.95
1.9
FEATURES
0.9 to 1.1
2.9 ±0.2
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)
• Low forward voltage (Schottky barrier diode)
VF = 0.35 V TYP. (IF = 1.0 A)
PIN CONNECTION (Top View)
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
1
2
3
<R>
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
Note
μ PA507TE-T1-A
Sn-Bi
8 mm Embossed Taping 3000 p/reel
8 mm Embossed Taping 3000 p/reel
SC-95_5pin (Mini Mold Thin Type)
SC-95_5pin (Mini Mold Thin Type)
μ PA507TE-T2-A Note
μ PA507TE-T1-AT Note
μ PA507TE-T2-AT Note
Pure Sn
Note Pb-free (This product does not contain Pb in the external electrode and other parts).
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16626EJ2V0DS00 (2nd edition)
Date Published December 2006 NS CP(K)
Printed in Japan
2003
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μPA507TE
MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
−20
m8
V
V
m2
A
m8
A
0.57
150
W
°C
Tch
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec.
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Repetitive Peak Reverse Voltage
Average Forward Current Note1
Surge Current Note2
VRRM
IF(AV)
IFSM
TJ
30
V
1
10
A
A
Junction Temperature
+125
°C
°C
Storage Temperature
Tstg
−55 to +125
Notes 1. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec
2. 50 Hz sine wave, 1 cycle
2
Data Sheet G16626EJ2V0DS
μPA507TE
MOS FET ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
−1
UNIT
μA
μA
V
IDSS
VDS = −20 V, VGS = 0 V
IGSS
VGS = m8 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.0 A
VGS = −4.5 V, ID = −1.0 A
VGS = −2.5 V, ID = −1.0 A
VGS = −1.8 V, ID = −1.0 A
VDS = −10 V,
m10
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
−0.45
−0.75
4.3
68
−1.50
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
2.0
S
85
mΩ
mΩ
mΩ
pF
pF
pF
ns
84
120
180
109
380
85
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V,
Crss
f = 1.0 MHz
45
td(on)
VDD = −10 V, ID = −1.0 A,
VGS = −4.0 V,
10
tr
5
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
47
ns
tf
28
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QG
VDD = −16 V,
4.7
0.9
1.5
0.84
nC
nC
nC
V
QGS
VGS = −4.0 V,
ID = −2.0 A
QGD
VF(S-D)
IF = 2.0 A, VGS = 0 V
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Forward Voltage
SYMBOL
TEST CONDITIONS
IF = 1.0 A
MIN.
TYP.
0.35
MAX.
0.38
200
UNIT
V
VF
IR
Reverse Current
VR = 10 V
μA
pF
Terminal Capacitance
CT
f = 1.0 MHz, VR = 10 V
36
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= −2 mA
RL
V
V
GS(−)
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS(−)
90%
90%
V
0
GS(−)
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1
μ
s
t
on
toff
Duty Cycle ≤ 1%
3
Data Sheet G16626EJ2V0DS
μPA507TE
MOS FET TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
120
100
80
60
40
20
0
Mounted on FR-4 board of
2500 mm2 x 1.6 mm
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
- 100
- 10
DS(on)
R
Limited
GS
−
(at V
=
4.5 V)
D(pulse)
I
PW = 1 ms
D(DC)
I
- 1
10 ms
100 ms
5 s
- 0.1
Single pulse
Mounted on FR-4 board of
2500 mm2 x 1.6 mm
- 0.01
- 0.1
- 1
- 10
- 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Single pulse
Mounted on FR-4 board of
2500 mm2 x 1.6 mm
PD (FET) : P (SBD) = 1: 0
1
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet G16626EJ2V0DS
μPA507TE
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
- 8
- 6
- 4
- 2
0
- 10
- 1
Pulsed
VDS = −10 V
Pulsed
VGS = −4.5 V
−2.5 V
A
T
= 125°C
75°C
25°C
−25°C
- 0.1
−1.8 V
- 0.01
- 0.001
- 0.0001
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
0
- 0.5
- 1
- 1.5
- 2
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
- 1
- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
10
VDS = −10 V
ID = −1.0 mA
VDS = −10 V
Pulsed
TA = −25°C
25°C
1
75°C
125°C
0.1
- 50
0
50
100
150
- 0.01
- 0.1
- 1
- 10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
200
Pulsed
ID = −1.0 A
Pulsed
150
100
50
150
100
50
GS
−
1.8 V
−2.5 V
−4.5 V
V
=
0
0
- 0.01
- 0.1
- 1
- 10
0
- 2
- 4
- 6
- 8
ID - Drain Current - A
VGS - Gate to Source Voltage - V
5
Data Sheet G16626EJ2V0DS
μPA507TE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
200
1000
GS
V
= 0 V
ID = −1.0 A
Pulsed
f = 1.0 MHz
iss
C
VGS = −1.8 V
150
100
50
−2.5 V
−4.5 V
100
oss
C
rss
C
0
10
- 0.01
- 50
0
50
100
150
- 0.1
- 1
- 10
- 100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
100
- 4
- 3
- 2
- 1
0
D
I
−
1.0 A
=
td(off)
tf
DD
V
−
4.0 V
=
−10 V
−16 V
10
td(on)
tr
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
1
- 0.1
0
1
2
3
4
5
- 1
- 10
QG - Gate Change - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Pulsed
1
GS
V
= 0 V
0.1
0.01
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
6
Data Sheet G16626EJ2V0DS
μPA507TE
SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD CURRENT vs. FORWARD VOLTAGE
REVERSE CURRENT vs. REVERSE VOLTAGE
10
100
Pulsed
TA = 125°C
Pulsed
10
75°C
1
1
TA = 125°C
75°C
25°C
−25°C
25°C
0.1
0.1
0.01
0.001
0.0001
−25°C
0.01
0
0.2
0.4
0.6
0.8
1
0
10
20
30
40
VF - Forward Voltage - V
VR - Reverse Voltage - V
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
1000
f = 1.0 MHz
100
10
0.1
1
10
100
VR - Reverse Voltage - V
7
Data Sheet G16626EJ2V0DS
μPA507TE
•
The information in this document is current as of December, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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•
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M8E 02. 11-1
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