UPA800TF [NEC]

NPN SILICON HIGH FREQUENCY TRANSISTOR; NPN硅高频三极管


型号：	UPA800TF
厂家：	NEC
描述：	NPN SILICON HIGH FREQUENCY TRANSISTOR NPN硅高频三极管晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
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中文：	中文翻译
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NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA800TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE STYLE:

SOT-363 package measures just 2.0 mm x 1.25 mm

PACKAGE OUTLINE TS06

(Top View)

2.1 ± 0.1

LOW HEIGHT PROFILE:

Just 0.60 mm high

1.25 ± 0.1

EXCELLENT LOW VOLTAGE, LOW CURRENT

PERFORMANCE

0.65

+0.10

- 0.05

2.0 ± 0.2

(All Leads)

0.22

DESCRIPTION

1.3

The UPA800TF contains two NE680 NPN high frequency

siliconbipolarchips. NEC'snewlowprofileTFpackageisideal

for all portable wireless applicatons where reducing compo-

nent height is a prime consideration. Each transistor chip is

independently mounted and easily configured for two stage

cascade LNAs and other similar applications.

0.6 ± 0.1

0.45

0.13 ±0.05

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0 ~ 0.1

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

PIN OUT

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

1.5

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Note:

Pin 1 is the lower left most pin as

the package lettering is oriented

and read left to right.

Total Power Dissipation

1 Die

2 Die

110

200

TSTG

Junction Temperature

Storage Temperature

°C

150

-65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA800TF

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain¹at VCE = 3 V, IC = 5 mA

µA

1.0

120

8.0

0.3

7.5

1.9

200

Gain Bandwidth at VCE = 3 V, IC = 5 mA

GHz

5.5

Cre

|S21E|²

Feedback Capacitance²at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz

0.7

3.2

5.5

Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use

part number UPA800TF-T1, 3K per reel.

California Eastern Laboratories

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

EXCLUSIVE NORTH AMERICAN AGENT FOR

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

2/99

DATA SUBJECT TO CHANGE WITHOUT NOTICE