UPA801T-T1FB-A [NEC]
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6;
| 型号： | UPA801T-T1FB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6 放大器 ISM频段 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA801T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
PACKAGE DRAWINGS
The µPA801T has built-in 2 low-voltage transistors which are designed
(Unit: m m )
to am plify low noise in the VHF band to the UHF band.
2.1±0.1
FEATURES
1.25±0.1
•
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
•
High Gain
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A
A Mini Mold Package Adopted
Built-in 2 Transistors (2 × 2SC4226)
•
•
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA801T
Loose products
(50 PCS)
Em bossed tape 8 m m wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)
face to perforation side of the tape.
PIN CONFIGURATION (Top View )
µPA801T-T1
Taping products
(3 KPCS/Reel)
6
5
2
4
Q
1
Rem ark If you require an evaluation sam ple, please contact an NEC
Q
3
2
Sales Representative. (Unit sam ple quantity is 50 pcs.)
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
3. Collector (Q2)
Collector to Base Voltage
Collector to Em itter Voltage
Em itter to Base Voltage
Collector Current
20
12
3
V
V
100
m A
m W
Total Power Dissipation
PT
150 in 1 elem ent
200 in 2 elem ents
Note
J unction Tem perature
Storage Tem perature
Tj
150
˚C
˚C
Tstg
–65 to +150
Note 110 m W m ust not be exceeded in 1 elem ent.
The inform ation in this docum ent is subject to change w ithout notice.
Document No. ID-3635
(O.D. No. ID-9142)
Date Published April 1995 P
Printed in Japan
1995
©
µPA801T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
VCB = 10 V, IE = 0
MIN.
TYP.
MAX.
UNIT
µA
Collector Cutoff Current
Em itter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT
1
1
VEB = 1 V, IC = 0
µA
Note 1
VCE = 3 V, IC = 7 m A
VCE = 3 V, IC = 7 m A
70
250
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
3.0
4.5
0.7
9
GHz
pF
Note 2
Cre
VCB = 3 V, IE = 0, f = 1 MHz
1.5
2.5
2
|S21|
VCE = 3 V, IC = 7 m A, f = 1 GHz
VCE = 3 V, IC = 7 m A, f = 1 GHz
7
dB
NF
1.2
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 7 m A
A sm aller value am ong
hFE of hFE1 = Q1, Q2
A larger value am ong
hFE of hFE2 = Q1, Q2
0.85
Notes 1. Pulse Measurem ent: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, em itter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
R24
GB
R25
Marking
hFE Value
70 to 140
125 to 250
TYPICAL CHARACTERISTICS (TA = 25 °C)
P
T
– TA
Characteristics
IC – VBE Characteristics
20
10
VCE = 3 V
200
100
0
0.5
Base to Emitter Voltage VBE (V)
1.0
0
50
100
150
Ambient Temperature T
A
(°C)
I
C
– VCE Characteristics
hFE – IC Characteristics
200
100
50
25
20
15
µ
IB =160 A
VCE = 3 V
140
µ
µ
A
A
120
100
µ
A
80
60
40
20
µ A
10
5
µ
µ
µ
A
A
A
20
10
0
5
10
0.5
1
5
10
C (mA)
50
Collector Current I
Collector to Emitter Voltage VCE (V)
2
µPA801T
fT
– IC
Characteristics
l S21e l 2– I
C
Characteristics
VCE = 3 V
f = 1.0 GHZ
15
10
5
20
10
V
CE = 3 V
f = 1.0 GH
Z
5
2
1
0
0.5
1
5
10
50 100
0.5
1
5
10
50
Collector Current IC (mA)
Collector Current I (mA)
C
NF – IC Characteristics
l S21e l 2– f Characteristics
6
24
VCE = 3 V
VCE = 3V
f = 1 GH
Z
IC = 7 mA
20
16
12
4
2
0
8
4
0
2.0
0.1
0.2
0.5
1.0
5.0
0.5
1.0
5.0 10
Collector Current I
50 100
C
(mA)
Frequency f (GHZ)
Cre – VCB Characteristics
5.0
f = 1 MH
Z
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
µPA801T
S-PARAMETERS
VCE = 3 V, IC = 7 m A, ZO = 50 Ω
FREQUENCY
MHz
S 11
S 21
S 12
S 22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
.750
.618
.528
.483
.459
.447
.441
.439
.437
.437
.440
.443
.444
.449
.450
.455
.459
.462
.466
.470
–45.7
–84.9
–114.5
–134.3
–148.5
–158.8
–167.4
–174.4
179.2
173.7
168.6
163.9
159.6
155.5
151.6
147.9
144.3
140.9
137.5
134.4
11.858
10.093
8.219
6.684
5.565
4.737
4.134
3.653
3.283
2.978
2.732
2.533
2.357
2.216
2.077
1.972
1.868
1.789
1.702
1.635
144.0
122.3
107.7
97.9
90.5
84.6
79.7
75.2
71.1
67.2
63.7
60.0
56.6
53.4
50.3
47.4
44.3
41.3
38.4
36.1
.035
.053
.064
.073
.081
.089
.098
.107
.117
.126
.136
.147
.158
.169
.180
.192
.202
.214
.226
.238
63.3
53.2
50.6
50.6
50.7
52.3
53.5
54.2
54.9
55.6
55.8
55.3
55.4
55.3
54.7
54.5
53.9
53.0
52.3
51.5
.816
.609
.481
.411
.365
.337
.316
.300
.290
.281
.275
.270
.267
.264
.259
.258
.256
.255
.253
.253
–28.5
–41.8
–46.7
–49.1
–50.5
–51.5
–52.6
–54.2
–55.9
–57.9
–59.6
–62.3
–64.7
–67.5
–70.6
–73.3
–76.3
–79.6
–83.0
–86.4
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
VCE = 3 V, IC = 5 m A, ZO = 50 Ω
FREQUENCY
MHz
S 11
S 21
S 12
S 22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
.819
.701
.608
.549
.511
.494
.481
.475
.472
.471
.473
.474
.474
.477
.481
.484
.489
.490
.495
.501
–38.9
–73.4
8.934
8.007
6.898
5.819
4.970
4.255
3.750
3.328
3.004
2.734
2.522
2.355
2.176
2.038
1.921
1.818
1.726
1.647
1.578
1.505
148.0
127.6
112.6
101.8
93.5
86.9
81.4
76.3
72.0
67.7
64.0
60.2
56.7
53.2
49.8
46.7
43.9
40.6
37.6
35.0
.038
.060
.072
.079
.086
.093
.099
.107
.113
.122
.130
.139
.148
.158
.168
.177
.190
.200
.212
.223
65.8
53.1
47.6
45.2
45.7
46.5
47.2
48.9
49.7
50.9
51.6
52.3
53.1
53.3
53.7
53.3
53.3
53.0
52.7
52.0
.868
.687
.560
.483
.434
.402
.379
.361
.350
.340
.332
.328
.322
.319
.315
.313
.312
.312
.309
.309
–23.6
–36.7
–42.4
–45.4
–47.2
–48.6
–49.9
–51.5
–53.4
–55.4
–57.3
–59.7
–62.3
–65.2
–68.2
–70.9
–73.9
–77.2
–80.8
–84.0
300.00
–102.3
–123.6
–139.6
–151.0
–160.8
–168.6
–175.7
178.2
172.8
167.6
162.9
158.4
154.4
150.3
146.5
142.9
139.3
136.0
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
4
µPA801T
S-PARAMETERS
VCE = 3 V, IC = 3 m A, ZO = 50 Ω
FREQUENCY
MHz
S 11
S 21
S 12
S 22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
.899
.808
.723
.660
.610
.583
.560
.547
.538
.535
.534
.533
.533
.534
.538
.542
.545
.548
.552
.556
–30.6
–60.6
5.578
5.327
4.877
4.341
3.883
3.388
3.046
2.741
2.498
2.287
2.111
1.965
1.830
1.721
1.620
1.544
1.464
1.396
1.336
1.280
153.7
134.4
119.6
108.1
98.5
90.9
84.3
78.5
73.4
68.9
64.6
60.2
56.3
52.7
49.2
45.7
42.7
39.5
36.6
33.6
.042
.069
.084
.093
.098
.102
.106
.108
.112
.116
.120
.125
.131
.139
.146
.155
.164
.174
.187
.199
69.0
54.5
46.0
41.1
38.8
37.4
37.8
38.1
39.5
41.0
43.0
45.1
46.7
48.3
49.8
51.3
52.4
53.0
53.7
54.1
.923
.793
.679
.604
.550
.513
.487
.468
.455
.444
.435
.429
.424
.422
.417
.414
.415
.412
.411
.411
–17.3
–29.2
–35.4
–39.5
–42.0
–44.2
–45.9
–47.9
–49.9
–52.3
–54.7
–57.2
–59.9
–62.8
–65.7
–68.8
–72.0
–75.3
–78.8
–82.3
300.00
–86.7
400.00
–108.2
–125.9
–138.6
–150.0
–159.4
–167.4
–174.4
179.3
173.4
168.3
163.2
158.7
154.3
150.0
146.1
142.0
138.3
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
VCE = 3 V, IC = 1 m A, ZO = 50 Ω
FREQUENCY
MHz
S 11
S 21
S 12
S 22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
200.00
.967
.930
.884
.842
.801
.771
.742
.722
.706
.695
.689
.685
.681
.681
.683
.684
.684
.686
.689
.690
–22.9
–45.8
1.935
1.968
1.938
1.827
1.748
1.576
1.498
1.403
1.326
1.242
1.169
1.102
1.030
.979
159.9
143.1
129.1
117.2
106.7
97.4
89.2
81.9
75.6
69.6
64.5
59.6
55.3
50.9
47.2
43.6
40.4
37.3
34.6
32.3
.045
.083
.108
.125
.134
.137
.137
.134
.129
.124
.118
.112
.106
.103
.100
.102
.107
.115
.127
.141
74.0
60.1
48.9
39.4
32.6
27.1
22.9
20.0
18.5
17.8
18.1
19.8
23.5
28.0
33.6
40.4
47.5
53.5
57.9
62.1
.978
.931
.870
.822
.779
.749
.722
.702
.690
.680
.671
.666
.660
.658
.654
.651
.651
.649
.646
.646
–9.2
–17.4
–23.2
–28.0
–31.9
–35.3
–38.4
–41.3
–44.4
–47.4
–50.4
–53.6
–56.9
–60.4
–64.0
–67.6
–71.5
–75.1
–79.2
–83.0
300.00
–67.1
400.00
–85.9
500.00
–103.1
–117.0
–130.0
–141.2
–151.1
–159.9
–167.7
–174.9
178.7
172.6
166.8
161.4
156.1
151.4
146.6
142.1
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
.925
.884
.842
.804
.773
.738
5
µPA801T
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
相关型号：
UPA801T-T1GB
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801T-T1GB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-A
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA801TC-FB
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA801TC-GB
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
RENESAS
UPA801TC-GB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-T1
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLDWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-T1-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-T1FB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-T1GB
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
UPA801TC-T1GB-A
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
NEC
©2020 ICPDF网 联系我们和版权申明