UPA810T-T1FB-A [NEC]

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6;
UPA810T-T1FB-A
型号: UPA810T-T1FB-A
厂家: NEC    NEC
描述:

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

文件: 总6页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PRELIMINARY DATA SHEET  
SILICON TRANSISTOR  
µPA810T  
HIGH-FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD  
PACKAGE DRAWINGS  
The µPA810T has built-in 2 low-voltage transistors which are designed to  
(Unit: m m )  
amplify low noise in the VHF band to the UHF band.  
2.1±0.1  
FEATURES  
1.25±0.1  
Low Noise  
NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
High Gain  
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
A Small Mini Mold Package Adopted  
Built-in 2 Transistors (2 × 2SC4226)  
ORDERING INFORMATION  
PART NUMBER  
QUANTITY  
PACKING STYLE  
µPA810T  
Loose products  
(50 PCS)  
Embossed tape 8 mm wide. Pin 6 (Q1  
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)  
face to perforation side of the tape.  
µPA810T-T1  
Taping products  
(3 KPCS/Reel)  
Remark If you require an evaluation sample, please contact an NEC Sales  
PIN CONFIGURATION (Top View)  
Representative. (Unit sample quantity is 50 pcs.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
6
5
2
4
Q
1
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Q
2
20  
12  
3
1
3
V
V
100  
mA  
mW  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Base (Q2)  
Total Power Dissipation  
PT  
150 in 1 element  
200 in 2 elements  
4. Emitter (Q2)  
5. Emitter (Q1)  
6. Base (Q1)  
Note  
3. Collector (Q2)  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–65 to +150  
Note 110 mW must not be exceeded in 1 element.  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. P11463EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©
µPA810T  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PARAMETER  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
CONDITION  
VCB = 10 V, IE = 0  
MIN.  
TYP.  
MAX.  
1
UNIT  
µA  
VEB = 1 V, IC = 0  
1
µA  
hFE  
VCE = 3 V, IC = 7 mANote 1  
VCE = 3 V, IC = 7 mA  
70  
250  
Gain Bandwidth Product  
Feed-back Capacitance  
Insertion Power Gain  
Noise Figure  
fT  
3.0  
4.5  
0.7  
9
GHz  
pF  
Cre  
VCB = 3 V, IE = 0, f = 1 MHzNote 2  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
1.5  
2.5  
2
|S21e|  
7
dB  
NF  
1.2  
dB  
hFE Ratio  
hFE1/hFE2  
VCE = 3 V, IC = 7 mA  
A smaller value among  
hFE of hFE1 = Q1, Q2  
A larger value among  
hFE of hFE2 = Q1, Q2  
0.85  
Notes 1. Pulse Measurement: Pw 350 µs, Duty cycle 2 %  
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.  
hFE CLASSIFICATION  
Rank  
FB  
24R  
GB  
25R  
Marking  
hFE Value  
70 to 140  
125 to 250  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
PT  
– T  
A
Characteristics  
IC – VBE Characteristics  
20  
10  
VCE = 3 V  
200  
100  
0
0.5  
Base to Emitter Voltage VBE (V)  
1.0  
0
50  
100  
150  
Ambient Temperature T  
A
(°C)  
I
C
– VCE Characteristics  
hFE – IC Characteristics  
200  
100  
50  
25  
20  
15  
µ
IB =160 A  
V
CE = 3 V  
140  
µ
µ
A
A
120  
100  
µ
A
80  
60  
40  
20  
µ A  
10  
5
µ
µ
µ
A
A
A
20  
10  
0
5
10  
0.5  
1
5
10  
C (mA)  
50  
Collector Current I  
Collector to Emitter Voltage VCE (V)  
2
µPA810T  
f
T
– I  
C
Characteristics  
l S21e l 2– I  
C Characteristics  
15  
10  
5
20  
10  
V
CE = 3 V  
V
CE = 3 V  
f = 1.0 GHZ  
f = 1.0 GH  
Z
5
2
1
0
0.5  
1
5
10  
50 100  
0.5  
1
5
10  
50  
Collector Current I  
C
(mA)  
Collector Current I (mA)  
C
NF – I  
C
Characteristics  
l S21e l 2– f Characteristics  
6
24  
VCE = 3 V  
V
CE = 3 V  
f = 1 GH  
Z
IC = 7 mA  
20  
16  
12  
4
2
0
8
4
0
2.0  
0.1  
0.2  
0.5  
1.0  
5.0  
0.5 1.0  
5.0 10  
Collector Current I  
50 100  
C
(mA)  
Frequency f (GHZ)  
Cre – VCB Characteristics  
5.0  
f = 1 MH  
Z
2.0  
1.0  
0.5  
0.2  
0.1  
1
2
5
10  
20  
50  
Collector to Base Voltage VCB (V)  
3
µPA810T  
S-PARAMETERS  
VCE = 3 V, IC = 1 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.959  
0.920  
0.838  
0.810  
0.775  
0.767  
0.745  
0.722  
0.711  
0.715  
0.708  
0.697  
0.688  
0.675  
0.706  
0.725  
0.723  
0.718  
0.702  
0.716  
–26.1  
–48.3  
3.680  
3.305  
2.972  
2.612  
2.367  
2.149  
1.986  
1.854  
1.655  
1.541  
1.414  
1.340  
1.271  
1.174  
1.119  
1.058  
1.007  
0.998  
0.957  
0.943  
162.0  
146.4  
131.3  
121.4  
110.9  
104.1  
93.8  
87.9  
80.0  
74.0  
69.2  
63.3  
59.5  
54.4  
49.8  
47.5  
43.9  
40.8  
36.2  
31.1  
0.045  
0.080  
0.111  
0.128  
0.137  
0.147  
0.147  
0.150  
0.143  
0.140  
0.136  
0.134  
0.132  
0.122  
0.118  
0.111  
0.114  
0.119  
0.126  
0.137  
77.2  
63.8  
50.1  
43.5  
34.7  
30.8  
25.1  
21.5  
20.5  
17.1  
19.0  
18.0  
18.5  
20.1  
21.9  
29.5  
33.2  
40.8  
44.1  
47.1  
0.983  
0.937  
0.863  
0.815  
0.745  
0.724  
0.693  
0.682  
0.668  
0.644  
0.623  
0.594  
0.577  
0.559  
0.559  
0.549  
0.547  
0.537  
0.526  
0.514  
–9.0  
–15.8  
–23.0  
–26.3  
–29.1  
–31.7  
–33.2  
–36.5  
–39.2  
–43.7  
–46.8  
–50.1  
–52.7  
–55.3  
–58.3  
–61.9  
–66.8  
–71.6  
–76.8  
–81.8  
300.00  
–69.2  
400.00  
–85.6  
500.00  
–100.0  
–115.0  
–127.0  
–137.7  
–146.4  
–155.0  
–163.2  
–171.9  
–177.1  
178.8  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
173.6  
168.7  
161.1  
156.4  
152.5  
149.8  
VCE = 3 V, IC = 3 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.878  
0.788  
0.685  
0.634  
0.603  
0.591  
0.573  
0.566  
0.563  
0.573  
0.577  
0.572  
0.563  
0.555  
0.584  
0.603  
0.608  
0.607  
0.598  
0.612  
–39.3  
–69.5  
9.289  
7.675  
6.222  
5.151  
4.360  
3.838  
3.378  
3.215  
2.821  
2.594  
2.359  
2.200  
2.084  
1.904  
1.803  
1.700  
1.616  
1.591  
1.523  
1.488  
153.2  
133.1  
117.5  
108.1  
99.6  
94.6  
86.0  
82.1  
75.6  
70.7  
67.2  
62.2  
58.8  
54.8  
50.5  
48.7  
45.4  
42.4  
38.1  
32.8  
0.041  
0.068  
0.087  
0.094  
0.100  
0.105  
0.107  
0.113  
0.114  
0.118  
0.122  
0.128  
0.136  
0.138  
0.146  
0.150  
0.161  
0.173  
0.183  
0.197  
71.5  
55.9  
44.8  
41.7  
37.3  
37.7  
36.4  
36.7  
38.8  
38.3  
41.5  
41.7  
42.9  
43.8  
44.3  
48.4  
47.8  
50.0  
48.8  
47.7  
0.941  
0.807  
0.674  
0.588  
0.511  
0.475  
0.443  
0.425  
0.408  
0.385  
0.365  
0.343  
0.326  
0.309  
0.301  
0.290  
0.281  
0.268  
0.255  
0.244  
–17.3  
–28.4  
–36.5  
–39.0  
–40.5  
–41.3  
–41.5  
–43.2  
–45.0  
–48.2  
–50.7  
–53.3  
–55.1  
–57.1  
–59.6  
–62.8  
–67.3  
–72.3  
–77.4  
–82.6  
300.00  
–93.9  
400.00  
–111.2  
–125.2  
–137.9  
–148.5  
–156.8  
–163.4  
–170.3  
–177.2  
175.4  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
171.4  
168.5  
164.9  
161.2  
154.7  
150.8  
147.7  
145.8  
4
µPA810T  
S-PARAMETERS  
VCE = 3 V, IC = 5 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.803  
0.693  
0.594  
0.548  
0.528  
0.520  
0.508  
0.505  
0.505  
0.519  
0.527  
0.525  
0.518  
0.513  
0.539  
0.558  
0.565  
0.567  
0.561  
0.574  
–48.9  
–83.5  
13.450  
10.285  
7.895  
6.305  
5.237  
4.554  
3.961  
3.624  
3.283  
3.009  
2.729  
2.536  
2.399  
2.188  
2.067  
1.945  
1.847  
1.814  
1.737  
1.693  
147.0  
124.9  
110.2  
101.7  
94.4  
90.4  
82.8  
79.1  
73.6  
69.1  
66.0  
61.5  
58.3  
54.6  
50.6  
48.9  
46.0  
43.0  
38.9  
33.8  
0.040  
0.059  
0.073  
0.080  
0.086  
0.092  
0.097  
0.106  
0.112  
0.120  
0.127  
0.135  
0.147  
0.151  
0.162  
0.169  
0.181  
0.194  
0.205  
0.219  
65.9  
54.1  
45.6  
44.7  
42.6  
45.2  
45.4  
46.4  
48.6  
48.0  
50.1  
49.4  
49.9  
50.2  
49.5  
52.1  
50.8  
51.9  
49.8  
47.9  
0.892  
0.705  
0.557  
0.468  
0.398  
0.363  
0.334  
0.317  
0.301  
0.279  
0.262  
0.243  
0.227  
0.211  
0.202  
0.190  
0.179  
0.166  
0.152  
0.142  
–23.3  
–36.2  
–43.4  
–45.0  
–45.4  
–45.2  
–44.8  
–46.0  
–47.1  
–49.9  
–52.2  
–54.7  
–56.2  
–57.7  
–60.2  
–63.7  
–68.3  
–74.4  
–80.5  
–86.6  
300.00  
–108.3  
–125.1  
–138.0  
–149.3  
–158.7  
–165.6  
–171.1  
–176.9  
177.0  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
170.1  
166.6  
164.1  
161.2  
158.0  
152.1  
148.5  
145.6  
144.1  
VCE = 3 V, IC = 7 mA  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
0.729  
0.612  
0.529  
0.492  
0.481  
0.476  
0.469  
0.469  
0.471  
0.487  
0.497  
0.496  
0.490  
0.485  
0.513  
0.531  
0.539  
0.543  
0.539  
0.552  
–58.5  
–95.4  
–119.9  
–135.6  
–147.4  
–157.4  
–166.0  
–171.8  
–176.4  
178.6  
172.9  
166.5  
163.3  
161.2  
158.7  
155.9  
150.3  
146.9  
144.2  
142.6  
17.087  
12.153  
9.023  
7.052  
5.805  
4.986  
4.341  
3.951  
3.408  
3.268  
2.959  
2.748  
2.598  
2.365  
2.230  
2.100  
1.990  
1.955  
1.867  
1.820  
141.0  
118.7  
105.1  
97.4  
91.0  
87.6  
80.7  
77.3  
71.8  
68.1  
65.2  
60.9  
57.8  
54.4  
50.5  
49.0  
46.2  
43.4  
39.4  
34.3  
0.037  
0.052  
0.064  
0.072  
0.078  
0.087  
0.094  
0.106  
0.112  
0.123  
0.132  
0.142  
0.155  
0.161  
0.172  
0.180  
0.194  
0.207  
0.218  
0.233  
66.1  
52.6  
47.7  
48.8  
49.2  
51.9  
52.3  
53.1  
54.6  
53.4  
55.1  
53.9  
54.0  
53.4  
52.0  
54.1  
52.2  
52.8  
50.2  
47.9  
0.838  
0.618  
0.467  
0.382  
0.321  
0.291  
0.265  
0.248  
0.233  
0.213  
0.197  
0.179  
0.164  
0.149  
0.140  
0.127  
0.115  
0.102  
0.088  
0.080  
–29.0  
–42.2  
–48.4  
–49.2  
–48.7  
–47.9  
–47.0  
–47.6  
–48.7  
–51.0  
–53.1  
–55.6  
–57.0  
–59.0  
–61.3  
–65.2  
–70.6  
–78.3  
–87.0  
–95.5  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
5
µPA810T  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

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NEC

UPA810TC-T1

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-6
RENESAS

UPA810TC-T1-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-6
NEC

UPA810TC-T1-FB

RF SMALL SIGNAL TRANSISTOR
RENESAS

UPA810TC-T1FB

RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-6
NEC