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UPA861TC-FB-A [NEC]

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6;
UPA861TC-FB-A
型号： UPA861TC-FB-A
厂家： NEC    NEC
描述：

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

晶体 晶体管 射频
文件： 总10页 (文件大小：130K)
中文：  中文翻译
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NEC's NPN SILICON  
RF TWIN TRANSISTOR  
UPA861TD  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
•
•
LOW VOLTAGE, LOW CURRENT OPERATION  
LOW CAPACITANCE FOR WIDE TUNING RANGE  
Package Outline TD  
(TOP VIEW)  
1.0±0.05  
SMALL PACKAGE OUTLINE:  
1.2 mm x 0.8 mm  
+0.07  
-0.05  
0.8  
(Top View)  
Q1  
•
•
LOW HEIGHT PROFILE:  
Just 0.50 mm high  
C1  
E1  
C2  
B1  
E2  
B2  
1
2
3
6
5
4
TWO DIFFERENT DIE TYPES:  
Q1 - Ideal buffer amplifier transistor  
Q2 - Ideal oscillator transistor  
Q2  
•
IDEAL FOR >3 GHz OSCILLATORS  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
3. Collector (Q2)  
4. Base (Q2)  
DESCRIPTION  
NEC's UPA861TD contains one NE894 and one NE687 NPN  
high frequency silicon bipolar chip. The NE894 is an excellent  
oscillator chip, featuring high fT and low current, low voltage  
operation. The NE687 is an excellent buffer transistor, featur-  
inglownoiseandhighgain. NEC'snewultrasmallTDpackage  
is ideal for all portable wireless applications where reducing  
board space is a prime consideration. Each transistor chip is  
independently mounted and easily configured for oscillator/  
buffer amplifier and other applications.  
5. Emitter (Q2)  
6. Base (Q1)  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA861TD  
TD  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
nA  
MIN  
TYP  
MAX  
100  
100  
140  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
DC Current Gain1 at VCE = 1 V, IC = 10 mA  
70  
110  
12.0  
0.4  
fT  
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz  
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz  
GHz  
pF  
10.0  
Cre  
|S21E|2  
0.8  
dB  
7.0  
9.0  
NF  
dB  
1.5  
2.0  
ICBO  
IEBO  
hFE  
fT  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
nA  
nA  
100  
100  
100  
DC Current Gain1 at VCE = 1 V, IC = 5 mA  
50  
75  
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz  
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz  
GHz  
pF  
17.0  
20.0  
0.22  
13.0  
1.4  
Cre  
0.30  
2.5  
|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz  
NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt  
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
dB  
11.0  
dB  
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to  
guard pin of capacitances meter.  
California Eastern Laboratories  
UPA861TD  
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)  
ORDERING INFORMATION  
SYMBOLS  
PARAMETERS  
UNITS  
RATINGS  
PART NUMBER  
QUANTITY  
PACKAGING  
Q1  
5
Q2  
9
UPA861TD-T3  
10K Pcs./Reel  
Tape & Reel  
VCBO  
VCEO  
VEBO  
IC  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
3
3
V
2
1.5  
35  
105  
mA  
mW  
30  
90  
PT  
Total Power Dissipation1  
195 Total  
TJ  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
150  
TSTG  
-65 to +150  
Note: 1. Operation in excess of any one of these parameters may  
result in permanent damage.  
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB  
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
300  
Mounted on Glass Epoxy PCB  
(1.08 cm x 1.0mm (t))  
2
250  
2 Elements in total  
200  
195  
150  
Q2  
110005  
90  
Q1  
50  
0
25  
50  
75  
100  
125 150  
Ambient Temperature, TA (ºC)  
Q1  
Q2  
REVERSE TRANSFER CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
REVERSE TRANSFER CAPACITANCE vs.  
COLLECTOR TO BASE VOLTAGE  
0.5  
0.5  
f = 1 MHz  
f = 1 MHz  
0.4  
0.3  
0.2  
0.1  
0.4  
0.3  
0.2  
0.1  
0
1
2
3
4
5
0
2
4
6
8
10  
Collector to Base Voltage, VCB (V)  
Collector to Base Voltage, VCB (V)  
UPA861TD  
TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)  
Q1  
Q2  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
VCE = 1 V  
VCE = 1 V  
0.1  
0.1  
0.01  
0.01  
0.001  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage, VBE (V)  
Base to Emitter Voltage, VBE (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
100  
10  
1
100  
10  
1
V
CE = 2 V  
VCE = 2 V  
0.1  
0.1  
0.01  
0.01  
0.001  
0.001  
0.0001  
0.0001  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Base to Emitter Voltage, VBE (V)  
Base to Emitter Voltage, VBE (V)  
COLLECTOR CURRENT vs.  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
COLLECTOR TO EMITTER VOLTAGE  
35  
30  
25  
20  
15  
10  
5
40  
30  
20  
10  
IB : 50 µA step  
500  
µ
A
450  
µ
A
400 A  
µ
400 A  
µ
350 A  
µ
300  
µ
A
300  
250  
µ
A
µ
A
200  
µ
A
200  
150  
µ
A
µ
A
100 A  
µ
100 A  
µ
IB  
= 50  
3
µ
A
IB = 50  
3
µ
A
0
1
2
4
0
1
2
4
Collector to Emitter Voltage, VCE (V)  
Collector to Emitter Voltage, VCE (V)  
UPA861TD  
TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)  
Q1  
Q2  
DC VOLTAGE vs.  
DC VOLTAGE vs.  
COLLECTOR CURRENT  
COLLECTOR CURRENT  
1 000  
100  
10  
1 000  
100  
10  
V
CE = 1 V  
V
CE = 1 V  
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT vs.  
COLLECTOR CURRENT  
25  
20  
16  
14  
12  
10  
8
V
CE = 1 V  
V
CE = 1 V  
f = 2 GHz  
f = 2 GHz  
15  
10  
5
6
4
2
0
0
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
INSERTION POWER GAIN,  
MAG, MSG vs. FREQUENCY  
40  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
V
CE = 1 V  
V
CE = 1 V  
I = 20 mA  
C
IC = 10 mA  
MSG  
MAG  
MSG  
MAG  
2
|S21e  
|
2
|S21e  
|
0
0.1  
0
0.1  
1
10  
1
10  
Frequency, f (GHz)  
Frequency, f (GHz)  
UPA861TD  
TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)  
Q1  
Q2  
INSERTION POWER GAIN,  
INSERTION POWER GAIN,  
MAG, MSG vs. COLLECTOR CURRENT  
MAG, MSG vs. COLLECTOR CURRENT  
20  
16  
12  
8
20  
16  
12  
8
V
CE = 1 V  
V
CE = 1 V  
f = 2 GHz  
f = 2 GHz  
MSG  
MAG  
MSG  
MAG  
2
|S21e  
|
2
|S21e  
|
4
0
4
0
1
10  
100  
1
1
0
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN, MAG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN,  
MAG, MSG vs. COLLECTOR CURRENT  
20  
16  
12  
8
10  
8
V
CE = 1 V  
V
CE = 1 V  
f = 4 GHz  
f = 4 GHz  
MAG  
6
MSG  
MAG  
4
2
|S21e  
|
2
|S21e  
|
4
0
2
0
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN,  
MAG, MSG vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG  
vs. COLLECTOR CURRENT  
10  
10  
8
VCE = 2 V  
V
CE = 2 V  
f = 4 GHz  
f = 4 GHz  
8
MAG  
6
6
MSG  
2
|S21e  
|
4
4
2
|S21e  
|
2
0
2
0
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
UPA861TD  
TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)  
Q1  
Q2  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
6
5
4
3
2
24  
20  
16  
12  
10  
8
20  
16  
12  
8
V
CE = 1 V  
V
CE = 1 V  
f = 1 GHz  
f = 1 GHz  
G
a
G
a
6
4
8
4
0
NF  
4
2
0
1
0
NF  
0
100  
1
10  
Collector Current, IC (mA)  
100  
1
10  
Collector Current, IC (mA)  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
10  
8
20  
16  
12  
8
6
5
4
3
2
24  
V
CE = 1 V  
V
CE = 1 V  
f = 2 GHz  
f = 2 GHz  
20  
16  
12  
G
a
6
G
a
4
8
4
0
NF  
4
2
0
1
0
NF  
0
100  
1
10  
Collector Current, IC (mA)  
1
10  
Collector Current, IC (mA)  
100  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
NOISE FIGURE, ASSOCIATED GAIN  
vs. COLLECTOR CURENT  
6
5
4
3
2
24  
10  
8
20  
16  
12  
8
V
CE = 2 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
20  
16  
12  
G
a
G
a
6
4
8
4
0
NF  
4
2
0
1
0
NF  
0
100  
1
10  
Collector Current, IC (mA)  
100  
1
10  
Collector Current, IC (mA)  
UPA861TD  
TYPICAL SCATTERING PARAMETERS  
+90°  
j50  
+120°  
+60°  
j25  
j100  
S
21 = 10  
+150°  
+30°  
S
12 = .2  
j10  
0
+180°  
+0°  
10  
25  
50  
100  
S
22 = 1  
-j10  
-150°  
-30°  
S
11 = 1  
Coordinates in Ohms  
Frequency in GHz  
VCE = 1 V, IC = 10 mA  
-j25  
-j100  
-120°  
-60°  
-90°  
-j50  
0.100 to 3.000GHz by 0.050  
0.100 to 3.000GHz by 0.050  
UPA861TD (Q1)  
VCE = 1 V, IC = 10 mA  
Frequency  
S11  
S21  
S12  
S22  
K
MAG1  
(dB)  
GHz  
MAG  
ANG  
- 25.9  
- 51.3  
- 72.3  
- 89.7  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
- 18.3  
0.10  
0.20  
0.30  
0.40  
0.50  
0.60  
0.70  
0.80  
0.90  
1.00  
1.10  
1.20  
1.30  
1.40  
1.50  
1.60  
1.70  
1.80  
1.90  
2.00  
2.10  
2.20  
2.30  
2.40  
2.50  
2.60  
2.70  
2.80  
2.90  
3.00  
0.691  
0.625  
0.559  
0.507  
20.769  
18.506  
16.074  
13.885  
12.048  
10.549  
9.332  
8.348  
7.536  
6.861  
6.287  
5.800  
5.380  
5.014  
4.693  
4.409  
4.155  
3.930  
3.729  
3.543  
3.376  
3.223  
3.086  
2.959  
2.842  
2.734  
2.634  
2.544  
2.459  
2.381  
160.8  
144.8  
132.3  
122.8  
115.3  
109.5  
104.6  
100.5  
96.9  
93.7  
90.8  
88.2  
85.7  
83.4  
81.2  
79.2  
77.3  
75.4  
73.6  
71.9  
70.2  
68.6  
67.1  
65.7  
64.2  
62.8  
61.5  
60.1  
58.8  
57.6  
0.018  
0.033  
0.044  
0.052  
0.058  
0.064  
0.068  
0.073  
0.078  
0.082  
0.087  
0.091  
0.096  
0.100  
0.105  
0.110  
0.114  
0.119  
0.123  
0.128  
0.133  
0.137  
0.142  
0.146  
0.151  
0.155  
0.160  
0.164  
0.169  
0.173  
78.6  
66.0  
59.6  
55.7  
53.8  
52.4  
52.1  
51.9  
52.0  
52.0  
52.4  
52.7  
52.9  
53.1  
53.1  
53.3  
53.4  
53.4  
53.4  
53.2  
53.2  
53.0  
53.0  
52.8  
52.6  
52.3  
52.2  
51.9  
51.8  
51.4  
0.902  
0.793  
0.678  
0.581  
0.501  
0.440  
0.389  
0.349  
0.317  
0.291  
0.269  
0.250  
0.234  
0.222  
0.212  
0.204  
0.198  
0.193  
0.190  
0.188  
0.188  
0.188  
0.189  
0.190  
0.192  
0.193  
0.195  
0.198  
0.200  
0.202  
0.17  
0.28  
0.38  
0.47  
0.56  
0.63  
0.70  
0.76  
0.81  
0.85  
0.89  
0.92  
0.95  
0.97  
1.00  
1.01  
1.03  
1.05  
1.06  
1.07  
1.08  
1.08  
1.09  
1.10  
1.10  
1.11  
1.11  
1.11  
1.12  
1.12  
30.51  
27.44  
25.58  
24.25  
23.17  
22.20  
21.35  
20.58  
19.88  
19.22  
18.61  
18.03  
17.49  
16.99  
16.50  
15.32  
14.53  
13.89  
13.35  
12.83  
12.37  
11.93  
11.53  
11.15  
10.80  
10.46  
10.15  
9.85  
- 32.9  
- 44.0  
- 52.3  
- 58.7  
- 63.8  
- 68.2  
- 72.0  
- 75.7  
- 79.2  
- 82.6  
- 86.1  
- 89.6  
- 93.1  
- 96.9  
-100.5  
-104.0  
-107.7  
-111.4  
-114.7  
-118.1  
-121.1  
-124.1  
-126.8  
-129.2  
-131.1  
-132.9  
-134.4  
-136.1  
-137.1  
0.470 -104.3  
0.445 -116.3  
0.426 -126.4  
0.415 -135.1  
0.408 -142.8  
0.404 -149.5  
0.402 -155.5  
0.400 -161.0  
0.401 -165.9  
0.403 -170.4  
0.406 -174.4  
0.410 -178.1  
0.414  
0.419  
0.424  
0.428  
0.434  
0.438  
0.443  
0.447  
0.452  
0.456  
0.461  
0.464  
0.467  
0.470  
178.5  
175.3  
172.5  
169.9  
167.5  
165.3  
163.2  
161.3  
159.5  
158.0  
156.5  
155.3  
154.1  
153.0  
9.56  
9.30  
Note:  
1. Gain Calculations:  
2
1 + | ∆ |2 - |S11  
|
2 - |S22  
|
|S21  
|S12  
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.  
∆ = S11 S22 - S21 S12  
|S21  
|
|
(
K ±  
MAG =  
MSG =  
, K =  
,
|S12  
2 |S12  
S21|  
MAG = Maximum Available Gain  
MSG = Maximum Stable Gain  
UPA861TD  
TYPICAL SCATTERING PARAMETERS  
+90°  
j50  
+120°  
+60°  
j25  
j100  
S
21 = 10  
+150°  
S
12 = .2  
+30°  
j10  
0
S
11 = 1  
10  
25  
50  
100  
+180°  
+0°  
-j10  
S22 = 1  
-150°  
-30°  
Coordinates in Ohms  
Frequency in GHz  
VCE = 1 V, IC = 20 mA  
-j25  
-j100  
-120°  
-60°  
-j50  
-90°  
0.100 to 3.000GHz by 0.050  
0.100 to 3.000GHz by 0.050  
UPA861TD (Q2)  
VCE = 1 V, IC = 20 mA  
Frequency  
S11  
S21  
S12  
S22  
K
MAG1  
GHz  
MAG  
ANG  
- 21.6  
- 40.9  
- 56.8  
- 70.1  
- 81.9  
- 92.6  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
- 12.9  
(dB)  
0.10  
0.20  
0.30  
0.40  
0.50  
0.60  
0.70  
0.80  
0.90  
1.00  
1.10  
1.20  
1.30  
1.40  
1.50  
1.60  
1.70  
1.80  
1.90  
2.00  
2.10  
2.20  
2.30  
2.40  
2.50  
2.60  
2.70  
2.80  
2.90  
3.00  
0.401  
0.358  
0.308  
0.265  
0.231  
0.206  
0.187 -102.5  
0.174 -111.7  
0.164 -120.4  
0.159 -128.6  
0.156 -136.3  
0.154 -143.5  
0.154 -150.2  
0.157 -156.0  
0.160 -161.2  
0.165 -165.9  
0.170 -170.1  
0.177 -174.0  
0.183 -176.9  
0.190 -179.8  
0.197  
0.204  
0.211  
0.218  
0.224  
0.231  
0.237  
0.243  
0.249  
0.254  
29.200  
25.940  
22.512  
19.468  
16.923  
14.860  
13.191  
11.835  
10.710  
9.775  
8.985  
8.311  
7.727  
7.219  
6.772  
6.381  
6.030  
5.716  
5.437  
5.180  
4.949  
4.736  
4.543  
4.366  
4.200  
4.047  
3.906  
3.776  
3.654  
3.542  
161.7  
145.9  
133.8  
124.6  
117.4  
111.7  
107.0  
103.0  
99.5  
96.4  
93.6  
91.0  
88.7  
86.4  
84.3  
82.4  
80.5  
78.6  
76.8  
75.2  
73.5  
71.8  
70.3  
68.8  
67.2  
65.8  
64.3  
62.9  
61.5  
60.1  
0.008  
0.015  
0.022  
0.027  
0.031  
0.036  
0.040  
0.045  
0.049  
0.054  
0.059  
0.063  
0.068  
0.072  
0.077  
0.082  
0.087  
0.092  
0.096  
0.101  
0.106  
0.111  
0.116  
0.121  
0.126  
0.130  
0.135  
0.141  
0.146  
0.151  
83.0  
74.6  
72.4  
72.0  
72.1  
71.6  
72.0  
72.0  
72.3  
72.5  
72.7  
72.8  
72.9  
72.9  
72.8  
72.7  
72.5  
72.3  
72.0  
71.8  
71.6  
71.3  
71.1  
70.8  
70.4  
70.0  
69.6  
69.4  
68.9  
68.5  
0.891  
0.805  
0.710  
0.629  
0.563  
0.512  
0.471  
0.439  
0.413  
0.391  
0.372  
0.355  
0.341  
0.328  
0.316  
0.306  
0.297  
0.288  
0.280  
0.273  
0.266  
0.261  
0.255  
0.250  
0.245  
0.242  
0.238  
0.237  
0.234  
0.235  
0.43  
0.51  
0.62  
0.71  
0.79  
0.86  
0.90  
0.94  
0.97  
0.99  
1.00  
1.02  
1.03  
1.04  
1.05  
1.05  
1.06  
1.06  
1.07  
1.07  
1.07  
1.07  
1.07  
1.07  
1.07  
1.06  
1.06  
1.06  
1.06  
1.05  
35.60  
32.24  
30.19  
28.66  
27.35  
26.20  
25.15  
24.22  
23.37  
22.58  
21.43  
20.30  
19.45  
18.73  
18.06  
17.48  
16.93  
16.43  
15.96  
15.52  
15.11  
14.73  
14.35  
14.01  
13.68  
13.37  
13.07  
12.81  
12.53  
12.31  
- 23.2  
- 30.3  
- 35.1  
- 38.1  
- 40.2  
- 41.6  
- 42.7  
- 43.7  
- 44.7  
- 45.5  
- 46.6  
- 47.6  
- 48.7  
- 50.1  
- 51.4  
- 52.9  
- 54.6  
- 56.4  
- 58.3  
- 60.4  
- 62.5  
- 64.8  
- 67.0  
- 69.4  
- 71.7  
- 74.1  
- 76.5  
- 79.1  
- 81.3  
177.6  
175.8  
173.4  
171.9  
170.2  
169.0  
167.8  
166.9  
165.9  
165.3  
UPA861TD  
NON-LINEAR MODEL  
BJT NONLINEAR MODEL PARAMETERS(1)  
Parameters  
Q1  
Q2  
Parameters  
Q1  
Q2  
IS  
BF  
8e-17  
128  
137e-18  
129  
MJC  
XCJC  
CJS  
VJS  
MJS  
FC  
0.53  
1
0.24  
0.3  
NF  
1
0.9992  
22.4  
0
0
VAF  
IKF  
ISE  
NE  
17  
0.75  
0
0.75  
0
0.18  
3.3e-15  
1.48  
9.05  
1.05  
4.3  
2.8  
229e-15  
2.5  
0.37  
6e-12  
11.9  
9.55  
1.78  
69.1  
1e-9  
1.11  
0
0.55  
5e-12  
0.05  
0.5  
TF  
BR  
81.7  
XTF  
VTF  
ITF  
NR  
0.9944  
1.9  
VAR  
IKR  
ISC  
NC  
0.005  
0
0.009  
4e-15  
2
0.018  
227e-18  
1.17  
PTF  
TR  
1.0e-9  
1.11  
0
EG  
RE  
0.8  
0.75  
XTB  
XTI  
RB  
11.1  
5
3
3
RBM  
IRB  
RC  
2.46  
0.02  
7.5  
3
KF  
0
117e-15  
1.34  
0.005  
6
AF  
1
CJE  
VJE  
MJE  
CJC  
VJC  
0.415e-12  
0.68  
0.53  
0.102e-12  
0.29  
0.68e-12  
0.92  
0.26  
0.16e-12  
0.64  
(1) Gummel-Poon Model  
MODEL RANGE  
Frequency: 0.1 to 3.0 GHz  
Bias:  
Date:  
VCE =0.5 V to 2.5 V, IC = 0.5 mA to 20 mA  
09/02  
UPA861TD  
SCHEMATIC  
0.1 pF  
C_C1B2  
0.03 pF  
CCBPKG1  
LC  
LC1  
0.2 pF  
CCB1  
Pin_1  
0.85 nH  
0.01 nH  
LB1  
1.05 nH  
LB  
C_C1E1  
0.05 pF  
CCE1  
0.25 pF  
Pin_6  
0.01 nH  
Q1  
LE  
LE1  
Pin_2  
0.45 nH  
C_B1B2  
0.01 pF  
0.01 nH  
C_E1B2  
0.1 pF  
LE  
LE2  
C_E1C2  
0.05 pF  
CCE2  
0.35 pF  
Pin_5  
Pin_4  
0.01 nH  
0.55 nH  
C_B2E2  
0.01 pF  
LC2  
LC  
Pin_3  
0.95 nH  
0.01 nH  
CCB2  
0.01 pF  
Q2  
LB  
LB2  
0.9 nH  
0.01 nH  
0.03 pF  
CCEPKG2  
0.1 pF  
CCBPKG2  
MODEL RANGE  
Frequency: 0.1 to 3.0 GHz  
Bias:  
Date:  
VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 20 mA  
09/02  
Life Support Applications  
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably  
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and  
agree to fully indemnify CEL for all damages resulting from such improper use or sale.  
09/17/2002  
A Business Partner of NEC Compound Semiconductor Devices, Ltd.  

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