UPA869TSFB-A [NEC]
RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6;
| 型号： | UPA869TSFB-A |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.04A I(C), 2-Element, L Band, Silicon Germanium, NPN, 1007, SUPER LEADLESS MINIMOLD PACKAGE-6 放大器 ISM频段 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
NPN SILICON + SiGe RF TWIN TRANSISTOR
µPA869TS
NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
FEATURES
•
2 different built-in transistors (NESG2046M33, 2SC5800)
Q1: High gain SiGe transistor
fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz
Q2: Low phase distortion transistor suited for OSC applications
fT = 6.5 GHz TYP., S21e2 = 5.5 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz
6-pin super lead-less minimold (1007 package)
•
BUILT-IN TRANSISTORS
Q1
Q2
−
3-pin super lead-less minimold part No.
NESG2046M33
3-pin thin-type ultra super minimold part No.
−
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
µPA869TS
µPA869TS-T3
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10461EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2004
µPA869TS
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Q1
13
Q2
13
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
V
V
5
5
1.5
40
1.5
100
110
V
mA
mW
Note
Total Power Dissipation
Ptot
110
130 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
2
Preliminary Data Sheet PU10461EJ01V0DS
µPA869TS
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
nA
nA
−
100
100
220
−
IEBO
VEB = 0.5 V, IC = 0 mA
−
−
Note 1
hFE
VCE = 1 V, IC = 2 mA
140
15
11
−
180
18
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
dB
dB
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
13
−
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
0.8
1.5
Associated Gain
Ga
VCE = 1 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
9.5
11.5
0.2
−
dB
pF
Note 2
Reverse Transfer Capacitance
Cre
VCB = 1 V, IE = 0 mA, f = 1 MHz
−
0.4
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
600
600
145
−
Unit
nA
IEBO
VEB = 0.5 V, IC = 0 mA
−
−
nA
Note 1
hFE
VCE = 1 V, IC = 5 mA
100
3
120
4.5
6.5
4
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
fT
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
GHz
dB
5
−
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
3
−
4.5
−
5.5
1.9
−
dB
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
2.5
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
xJ
hFE Value of Q1
hFE Value of Q2
140 to 220
100 to 145
3
Preliminary Data Sheet PU10461EJ01V0DS
µPA869TS
PACKAGE DIMENSIONS
6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) (UNIT: mm)
0.9 0.05
0.7 0.05
(Top View)
Q1
C1
B1
E2
B2
1
6
5
4
E1
C2
2
Q2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
4
Preliminary Data Sheet PU10461EJ01V0DS
µPA869TS
•
The information in this document is current as of January, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 00. 4-0110
5
Preliminary Data Sheet PU10461EJ01V0DS
µPA869TS
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
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0310
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