UPA895TS-FB [NEC]
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6;
| 型号： | UPA895TS-FB |
| 厂家： | 
NEC |
| 描述： | RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SUPER LEADLESS MINIMOLD PACKAGE-6 |
| 文件： | 总7页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA895TS
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
FEATURES
•
Built-in low voltage operation, low phase distortion transistor suited for OSC applications
fT = 4.5 GHz TYP., S21e 2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Built-in 2 transistors (2 × 2SC5800)
•
•
6-pin super lead-less minimold package
BUILT-IN TRANSISTORS
Q1, Q2
Flat-lead 3-pin thin-type ultra super minimold part No.
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
µPA895TS
µPA895TS-T3
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10335EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2002, 2003
µPA895TS
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
9
5.5
1.5
V
V
100
mA
mW
Note
Total Power Dissipation
Ptot
110 in 1 element
130 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 5 V, IE = 0 mA
MIN.
−
TYP.
−
MAX.
Unit
nA
600
600
145
−
IEBO
VEB = 1 V, IC = 0 mA
−
−
nA
Note 1
hFE
VCE = 1 V, IC = 5 mA
100
3.0
5.0
3.0
4.5
−
120
4.5
6.5
4.0
5.5
1.9
−
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
fT
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
GHz
dB
−
2
S21e
−
2
S21e
−
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
NF
2.5
dB
Note 2
Reverse Transfer Capacitance
Cre
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.6
0.8
pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
kP
Marking
hFE Value
100 to 145
2
Data Sheet PU10335EJ02V0DS
µPA895TS
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
150
130
2 Elements in total
1 Element
110
100
50
0
25
50
75
100
125
(˚C)
150
0
2
4
6
8
10
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
VCE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
50
40
30
20
10
400
µ
360
320
280
240
A
µ
A
µ
A
µ
A
µ
A
200
µ
A
160 A
µ
120
80
µ
µ
A
A
µ
I
B
= 40
6
A
0
1
2
3
4
5
7
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10335EJ02V0DS
µPA895TS
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
VCE = 2 V
VCE = 1 V
0.1
1
10
100
0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10335EJ02V0DS
µPA895TS
PACKAGE DIMENSIONS
6-PIN SUPER LEAD-LESS MINIMOLD (UNIT: mm)
0.9±0.05
0.7±0.05
(Top View)
Q1
C1
E1
C2
B1
E2
B2
1
6
5
4
2
3
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
5
Data Sheet PU10335EJ02V0DS
µPA895TS
•
The information in this document is current as of September, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4-0110
6
Data Sheet PU10335EJ02V0DS
µPA895TS
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
E-mail: salesinfo@csd-nec.com (sales and general)
techinfo@csd-nec.com (technical)
http://www.ncsd.necel.com/
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
TEL: +852-3107-7303
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
TEL: +82-2-558-2120
FAX: +82-2-558-5209
FAX: +852-3107-7309
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
TEL: +1-408-988-3500 FAX: +1-408-988-0279
http://www.cel.com/
0307
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