UPD16873MC-6A4 [NEC]
MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER; 单片3宽高比主轴电机驱动器
| 型号： | UPD16873MC-6A4 |
| 厂家： | 
NEC |
| 描述： | MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER |
| 文件： | 总16页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS Integrated Circuit
µPD16873/A/B/C
MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER
DESCRIPTION
µPD16873/A/B/C is 3 aspect spindle motor driver that composed by CMOS control circuit and MOS bridge output.
The consumption electric power can be substantially reduced to the screwdriver which used a conventional
Bipolar transistor by the adoption of 3 aspect all-wave PWM methods and making an output paragraph MOSFET.
FEATURES
•
•
•
•
Low On resistance. (The summation of the on resistance of the upper and lower MOSFET) RON = 0.6 Ω (TYP.)
Low consumption power for 3 aspects all-wave PWM drive method.
Index pulse (FG pulse) output function built in.
By the PWM-drive form and the IND pulse pattern, 4 kind, line-up
PWM method
normal
Pattern of IND pulse (at 12 pole motor)
3 phase composition output (18 pulses/turn)
1 phase output (6 pulses/turn)
µPD16873
µPD16873A
µPD16873B
µPD16873C
normal
synchronous
synchronous
1 phase output (6 pulses/turn)
3 phase composition output (18 pulses/turn)
•
•
•
•
•
•
•
•
•
•
Built in STANDBY terminal and off the inner circuit at the time of the standby.
Built in START/STOP terminal. Operating short brake works, when ST/SP terminal is off state.
Supply voltage: 5 V drive
Low consumption current: IDD = 3 mA (MAX.)
Thermal shut down circuit (TSD) built in.
Over current protection circuit built in. (Setting by outside resistance)
Low voltage malfunction prevention circuit built in.
Reverse turn prevention circuit built in.
Hall bias switch built in. (synchronized STB signal.)
Loading into 30-pin plastic TSSOP (300 mil).
ORDERING INFORMATION
Part number
Function
Package
µPD16873MC-6A4
µPD16873AMC-6A4
µPD16873BMC-6A4
normal-PWM/3 phase IND
normal-PWM/1 phase IND
synchronous-PWM/1 phase IND
30-pin plastic TSSOP (7.62 mm (300))
µPD16873CMC-6A4 synchronous-PWM/3 phase IND
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S13870EJ1V0DS00 (1st edition)
Date Published February 2000 N CP(K)
Printed in Japan
2000
©
µPD16873/A/B/C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil)
Parameter
Symbol
VDD
Condition
control block
Rating
Unit
Supply voltage
Input voltage
−0.5 to +5.7
−0.5 to +5.7
−0.5 to VDD + 0.5
−0.5 to +6.7
±0.5
V
VM
output block
V
V
VIN
Output pin voltage
VOUT
ID(DC)
ID(pulse)
IDR(pulse)
PT
V
Output current (DC)Note 1
Output current (pulse)Note 2
Output current (pulse, reverse brake)Note 3
Power consumption
DC
A/phase
A/phase
A/phase
W
PW < 5 ms, Duty < 30 %
PW < 5 ms, Duty < 30 %
±1.3
±1.9
1.0
Peak junction temperature
Storage temperature range
TCH(MAX)
Tstg
150
°C
−55 to 150
°C
Notes 1. DC
2. PW < 5 ms, Duty < 30 % (start-up, locking)
3. PW < 5 ms, Duty < 30 % (reverse brake)
RECOMMENDED OPERATING CONDITIONS
When mounted on a glass epoxy board (10 cm × 10cm × 1mm, 15% copper foil)
Parameter
Symbol
VDD
Condition
control block
MIN.
4.5
4.5
0
TYP.
5.0
MAX.
5.5
5.5
VDD
0.4
1.0
1.5
20
Unit
V
Supply voltage
Input voltage
VM
output block
5.0
V
VIN
V
Output current (DC)Note 1
ID(DC)
ID(pulse)
IDR(pulse)
IHB
DC
A/phase
A/phase
A/phase
mA
Output current (pulse)Note 2
Output current (pulse, reverse brake)Note 3
Hall bias current
PW < 5 ms, Duty < 30 %
PW < 5 ms, Duty < 30 %
10
IND terminal output current
Operating temperature
IFG
±2.5
±5.0
75
mA
TA
−20
°C
Notes 1. DC
2. PW < 5 ms, Duty < 30 % (start-up, locking)
3. PW < 5ms, Duty < 30 % (reverse brake)
2
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
CHARACTERISTICS (Unless otherwise specified, TA = 25°C, VDD = VM = 5 V)
Parameter
Symbol
Condition
MIN.
TYP.
1.5
MAX
Unit
<all>
VDD pin current (operating)
VDD pin current (standby)
<ST/SP, STB pin>
IDD
STB = VDD
3.0
1.0
mA
IDD(ST)
STB = GND
µA
High level input voltage
Low level input voltage
Input pull-down resistance
<Oscillation circuit part>
VIH
VIL
1.8
VDD
0.8
V
V
RIND
110
75
kΩ
Triangle wave oscillation
frequency
fPWM
CT = 330pF
kHz
<Hall amplifier part>
Same aspect input range
Hysteresis
VHch
VHhys
IHbias
1.5
4.0
50
V
VH = 2.5 V
15
mV
µA
Input bias voltage
1.0
<Hall bias part>
Hall bias voltage
VHB
IHB = 10 mA
0.3
0.5
V
<IND signal output part>
IND terminal high level votlage
IND terminal low level voltage
<Output part>
VFG_H
VFG_L
IFG = −2.5 mA
3.5
V
V
IFG = +2.5 mA
0.5
0.9
Output on resistance
RON
ID = 200 mA
0.6
Ω
(upper + lower MOSFET)
−20°C < TA < 75°C
Off state leakage
ID(OFF)
tONH
−20°C < TA < 75°C
10
1.0
1.0
µA
µs
µs
Output turn-on time
Output turn-off time
<Torque order part>
RM = 5Ω
star connection
tOFFH
Control standard input votlage
range
ECR
0.3
0.3
4.0
V
Control input voltage range
Input current
EC
4.0
70
V
µA
V
IIN
EC, ECR = 0.5 to 3.0 V
Input voltage difference
ECR-EC
Duty = 100%, ECR = 2 V
exclusing dead zone
0.75
Dead zone (+)
EC_d+
ECR = 2 V
ECR = 2 V
0
0
65
100
mV
mV
Dead zone (−)
EC_d−
−65
−100
<Over current detection part>
Input offset voltage
CL terminal voltage
VIO
VCL
−15
15
mV
mV
90
100
110
Thermal shut down circuit (TSD) works in TCH > 150°C.
Low voltage malfunction prevention circuit (UVLO) works in 4 V (TYP.).
3
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
PIN CONNECTION
IND
STB
1
2
3
4
5
6
7
8
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
EC
ECR
V
M
VDD
VM
CT
OUT2
RF
RF
OUT1
H2+
H2−
H1+
H1−
H0+
H0−
HB
GND
GND
ST/SP
NC
VM
9
VM
10
11
12
13
14
15
OUT0
RF
RF
I
SEN
CL
Pin No.
1
Pin name
IND
STB
VM
Terminal function
Index signal output terminal
Standby mode input terminal
2
3
Supply voltage input terminal for motor part
Supply voltage input terminal for motor part
Motor connection terminal (W-phase)
3 pahse bridge common terminal
3 phase bridge common terminal
Motor connection terminal (V-phase)
Supply voltage input terminal for motor part
Supply voltage input terminal for motor part
Motor connection terminal (U-phase)
3 phase bridge common terminal
3 phase bridge common terminal
Sense resistance connection terminal
Over current detection voltage filter terminal
No connection
4
VM
5
OUT2
RF
6
7
RF
8
OUT1
VM
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VM
OUT0
RF
RF
ISENSE
CL
NC
ST/SP
GND
GND
HB
Start/Stop input terminal
Ground terminal
Ground terminal
Hall bias terminal
H0−
H0+
H1−
H1+
H2−
H2+
CT
Hall signal input terminal (U-phase)
Hall signal input terminal (U-phase)
Hall signal input terminal (V-phase)
Hall signal input terminal (V-phase)
Hall signal input terminal (W-phase)
Hall signal input terminal (W-phase)
Oscillation frequency setting condenser connection terminal
Supply voltage input terminal for control part
Control standard voltage input terminal
Control voltage input terminal
VDD
ECR
EC
Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals.
4
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
BLOCK DIAGRAM
IND
1
2
30 EC
STB
29 ECR
V
M
M
3
4
5
28
V
DD
UVLO
OSC
V
27 CT
Q5
Q6
T. S. D
OUT2
26 H2+
+
−
CMP2
Phase
exciting
pulse
generation
circuit
RF
RF
6
7
25 H2−
24 H1+
+
−
Q3
Q4
CMP1
CMP0
OUT1
8
9
23 H1−
22 H0+
21 H0−
20 HB
V
M
M
+
−
V
10
Q1
Q2
OUT0 11
RF 12
RF 13
19 GND
18 GND
Reverse
turn
detection
circuit
I
SEN 14
17 ST/SP
16 NC
+
−
CL 15
100 mV
Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals.
5
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
TYPICAL CHARACTERISTICS (TA = 25°C)
PT
vs. T
A
characteristics
IDD, IDD (ST) vs. VDD characteristics
2.0
1.0
0
T
A
= 25°C
µ
1.0
0.5
0
125°C/W
I
DD
I
DD (ST)
−20
0
20
40
60
(°C)
80
4.5
5.0
Control block supply voltage VDD (V)
5.5
Ambient temperature T
A
VIH, VIL vs. VDD characteristics (ST/SP, STB)
fPWM vs. VDD characteristics
1.5
1.4
1.3
1.2
1.1
1.0
100
90
80
70
60
50
T
A
= 25°C
= 330 pF
T
A
= 25°C
CT
VIH, VIL
4.5
5.0
Control block supply voltage VDD (V)
5.5
4.5
5.0
Control block supply voltage VDD (V)
5.5
f
PWM vs. T
A
characteristics
VHch vs. VDD characteristics
100
90
80
70
60
50
V
DD = 5 V
T = 25°C
A
(+)
(−)
CT
= 330 pF
5.0
4.0
3.0
2.0
1.0
0
(+)
(−)
−20
0
20
40
60
(°C)
80
4.5
5.0
Control block supply voltage VDD (V)
5.5
Ambient temperature T
A
6
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
R
ON, vs. V
M
characteristics
R
ON, vs. T characteristics
A
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
0
T
A
= 25°C
V
M
= 5 V
4.5
5.0
Control block supply voltage V
5.5
−20
0
20
40
60
80
M
(V)
Ambient temperature T (°C)
A
(ECR-EC) vs. VDD characteristics
EC_d+/EC_d− vs. VDD characteristics
= 25°C
1.0
0.9
0.8
0.7
0.6
0.5
100
80
60
40
20
0
T
A
= 25°C
T
A
Duty = 100%
EC_d−
EC_d+
4.5
5.0
Control block supply voltage VDD (V)
5.5
4.5
5.0
Control block supply voltage VDD (V)
5.5
t
ONH, tOFFH vs. V
M
characteristics
= 25°C
1.0
0.5
0
T
A
VDD = 5 V
t
ONH
µ
µ
t
OFFH
4.5
5.0
5.5
Control block supply voltage VDD (V)
7
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
FUNCTION OPERATION TABLE
(1) ST/SP (start/stop) function
ON/OFF of the movement can be set up under the condition which makes oscillation circuit work. Setting is done
with ST/SP terminal.
When ST/SP terminal is high level, it becomes active (operating) condition. And, when ST/SP terminal is low
level, it becomes stop condition. It becomes short brake condition under the stop condition.
• ST/SP = “H”
Input signal (Hall amplifier output)
Operation mode
exciting phase
CMP 0
CMP 1
CMP 2
PWM
H
L
H
H
H
H
H
H
L
H
H
L
L
L
ON
OFF
ON
W → V
L
H
L
W → U
V → U
V → W
U → W
U → V
L
L
OFF
ON
L
H
H
H
H
H
H
L
H
L
L
OFF
ON
L
H
L
L
L
OFF
ON
L
H
H
H
H
H
L
L
OFF
ON
L
H
L
L
L
OFF
In addition, the movement in OFF varies in the product.
Loop is composed through parasitic diode of the high-side MOSFET. (µPD16873/µPD16873A)
Loop is composed through channel of the high-side MOSFET. (µPD16873B/µPD16873C)
• ST/SP = “L”
Input signal (Hall amplifier output)
Operation mode
CMP 0
CMP 1
CMP 2
PWM
−
−
−
−
Stop (short brake)
It becomes short brake condition. (High side switch is “ON” and low side switch is “OFF”)
8
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
(2) Torque order
The relation between difference (ECR-EC) in control standard voltage (ECR) and control voltage (EC) and the
torque is as follows.
Duty cycle
Forward torque
100%
65 mVtyp
0.75 Vtyp
→ ECR-EC
(−)
(+)
0.75 Vtyp
65 mVtyp
100%
Reverse torque
Input voltage difference (ECR-EC) and output PWM duty becomes related to the proportion.
In addition, it becomes reverse brake when input voltage is ECR < EC. It stops after the reverse rotation of the
motor is detected under reverse braking mode. If input voltage difference is zero (ECR = EC), it becomes short
brake mode.
Input voltage difference
ECR > EC
Output mode
Forward turn
ECR = EC
ECR < EC
Stop (short brake)
Reverse turnNote
Note After detecting reverse, it stops.
(3) Standby mode
By the setting of standby mode, the power supply inside µPD16873 can be made off.
Each output terminal at the time of standby mode becomes high impedance. Also, the oscillation block inside,
too, stops and it is possible for the circuit current to reduce.
STB terminal
Operation mode
Regular mode
“H” level
“L” level
Standby mode
9
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
TIMING CHART
(1) Hall signal input
H0
H1
H2
(2) CMP signal
CMP0
CMP1
CMP2
IND
(873A/873B)
IND
(873/873C)
(3) Output MOSFET drive and comparator choice
Q1
(SW) (SW)
ON
ON
(SW) (SW)
ON
ON
Q2
SW
ON
SW
ON
SW
SW
ON
Q3 (SW)
ON
(SW) (SW)
ON
(SW) (SW)
Q4
Q5
Q6
SW
ON
SW
SW
ON
SW
SW
ON
(SW) (SW)
SW SW
ON
(SW) (SW)
SW SW
Remark µPD16873/A are not synchronous switching. (Normal type PWM)
µPD16873B/C are synchronous switching of high-side MOSFET. (Synchronous type PWM)
10
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
(4) Output terminal voltage wave
OUT0
OUT1
OUT2
PWM
PWM
PWM
PWM
PWM
PWM
Caution
(1) About output current
The rated ouptut current differs depending on whether the motor revolves at a constant speed (steady state), is
started (steady state), or Reverse brake is applied. The rated DC current when the motor revolves at a constant
speed is 0.5 A, and the rated instantaneous current when the is started is 1.3 A. When the motor is stopped by
using Reverse brake, the maximum current is 1.9 A.
When use Reverse brake, a current exceeding that when the motor revolves at a constant speed (immediately
before a brake is applied) instantaneously flows because of the counter electromotive force due to the motor
inductance. Determine the value of over current for steady state, taking the peak current for using Reverse
brake to the motor into consideration.
(2) About output pin voltage
Output terminal (OUT0, OUT1, OUT2) takes the voltage which exceeds a motor power supply during following
counter current.
Maximum rate of output pin voltage is 6.7 V. Be careful that an output terminal doesn’t take a voltage over 6.7 V.
VM
VM
I
D
I
D
OFF:
µ
PD16873/A
PD16873B/C
Q1
PWM ON:
µ
ON
OFF
ON
VOL
OUTA
OUTB
OUTA
OUTB
V
V
OUTB = IDR (ROUTB + R
S
)
OUTB = V
M
+ VOL
RON(N)
RON(N)
OFF
PWM-ON
OFF
PWM-ON
RF
RF
ISEN
ISEN
RS
RS
Lower Nch MOC: PWM-ON time
Lower Nch MOC: PWM-OFF time
11
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
APPLICATION CIRCUIT EXAMPLE
Caution If hall elements connected series, please change hall bias resistances, and hall signal include
into same aspect input range of hall amplifier.
12
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
PACKAGE DIMENSION
30-PIN PLASTIC TSSOP (7.62mm(300))
30
16
detail of lead end
F
G
T
P
L
U
1
15
E
H
A
A'
I
J
S
C
N
S
M
D
M
B
K
NOTE
ITEM MILLIMETERS
Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
A
A'
B
C
D
E
F
G
H
I
9.85±0.10
9.7±0.1
0.375
0.65 (T.P.)
0.24±0.05
0.1±0.05
1.2 MAX.
1.0±0.05
8.1±0.1
6.1±0.1
1.0±0.1
0.145±0.025
0.5
J
K
L
M
N
0.10
0.10
+5°
3°
P
−3°
T
0.25
U
0.6±0.15
S30MC-65-6A4
13
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
RECOMMENDED SOLDERING CONDITIONS
Solder this product under the following recommended conditions.
For soldering methods and conditions other than those recommended, consult NEC.
For details of the recommended soldering conditions, refer to information document “Semiconductor Device
Mounting Technology Manual”.
Recommended Condition
Soldering Method
Infrared reflow
Soldering Conditions
Symbol
Package peak temperature: 235°C; Time: 30 secs. max. (210°C min.);
Number of times: 3 times max.; Number of day: none; Flux:
Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is
recommended.
IR35-00-3
VP15-00-3
WS60-00-1
VPS
Package peak temperature: 215°C; Time: 40 secs. max.; (200°C min.)
Number of times: 3 times max.; Number of day: none; Flux:
Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is
recommended.
Wave Soldering
Package peak temperature: 260°C; Time: 10 secs. max.;
Preheating temperature: 120°C max.; Number of times: once;
Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.)
is recommended.
Caution Do not use two or more soldering methods in combination.
14
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
15
Data Sheet S13870EJ1V0DS00
µPD16873/A/B/C
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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