UPD46128953F1-E15X-EB1 [NEC]
4MX32 STANDARD SRAM, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127;
| 型号： | UPD46128953F1-E15X-EB1 |
| 厂家： | 
NEC |
| 描述： | 4MX32 STANDARD SRAM, PBGA127, 13.0 X 11.5 MM, PLASTIC, FBGA-127 静态存储器 |
| 文件： | 总60页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128953-X
128M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 32-BIT
ADDRESS / DATA MULTIPLEXED
EXTENDED TEMPERATURE OPERATION
Description
The μPD46128953-X is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS Mobile
Specified RAM featuring synchronous burst read and synchronous burst write function.
The μPD46128953-X realizes high performance with the SDR interface, command and data inputs / outputs are
synchronized the rising edge of clock.
The μPD46128953-X is fabricated with advanced CMOS technology using one-transistor memory cell.
Features
• 4,194,304 words by 32 bits organization
• Low voltage operation: 1.7 to 2.0 V (1.85 0.15 V)
• Operating ambient temperature: TA = −25 to +85 °C
• Synchronous burst mode
Burst length
: 8 double words (Wrap)
Burst sequence
: Linear burst
Maximum clock frequency : 83 / 66 MHz
• SDR (Single Data Rate) Architecture
One data transfers per one clock cycle
All inputs/outputs are synchronized with the positive edge of the clock
• Write data mask (DM) for write operation
• Output Enable: /OE pin
• Chip Enable input: /CE1 pin
• Standby Mode input: CE2 pin
• Standby Mode 1: Normal standby (Memory cell data hold valid)
• Standby Mode 2: Density of memory cell data hold is variable
μPD46128953
Clock
frequency
MHz
Operating
supply
voltage
V
Operating
ambient
temperature
°C
Supply current
At operating mA
At standby μA
(MAX.)
(MAX.)
(MAX.)
-E12X Note
-E15X
83
66
1.7 to 2.0
−25 to +85
60
55
T.B.D.
Note Under consideration
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M17506EJ1V1DS00 (1st edition)
Date Published September 2005 CP (K)
Printed in Japan
2005
μPD46128953-X
Ordering Information
μPD46128593-X is mainly shipping by wafer.
Please consult with our sales offices for package samples and ordering information.
2
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Pin Configuration
The following is pin configuration of package sample.
/xxx indicates active low signal.
127-pin PLASTIC FBGA (13.0 x 11.5)
Top View
Bottom View
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A B C D E F G H J K L M N P
P N M L K J H G F E D C B A
Top View
A
B
C
D
E
F
G
H
J
K
L
M
N
P
14
13
12
11
10
9
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DQ28
DQ29
DQ30
DQ31
NC
DQ26
DQ27
NC
DQ25
NC
DQ24
NC
V
DD
V
SS
Q
DQ23
NC
DQ22 A/DQ21
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VSS
A/DQ20 A/DQ19
NC
NC
A/DQ15 A/DQ7 A/DQ14 A/DQ18
NC
NC
NC
A/DQ6 A/DQ13 A/DQ12 A/DQ5 A/DQ17
8
NC
NC
/WE
CLK
DM0
NC
CE2
/ADV
DM1
NC
NC
NC
A/DQ4
A/DQ3
V
DD
Q
Q
NC
A/DQ16
NC
NC
7
/WAIT
NC
V
DD
V
DD
A/DQ11
V
DD
Q
Q
6
NC
A/DQ1 A/DQ9 A/DQ10 A/DQ2
V
SS
5
V
SS
NC
VSS
Q
/OE
NC
NC
A/DQ0
/CE1
NC
A/DQ8
NC
NC
NC
NC
4
NC
NC
NC
NC
NC
3
DM2
DM3
V
DD
V
SS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
2
1
A/DQ0 to A/DQ021 : Address inputs , Data inputs/ outputs
/WAIT
: Wait output
DQ22 to DQ31
/CE1
: Data inputs / outputs
: Chip select input
: Standby mode input
: Write enable input
: Output enable input
: Clock input
DM0 to DM3 : Write data mask input
VDD
: Power supply
: Ground
CE2
VSS
/WE
VDDQ
VSSQ
NC Note
: Power supply for DQ
: Ground for DQ
: No Connection
/OE
CLK
/ADV
: Address valid
Note Some signals can be applied because this pin is not internally connected.
Remark Refer to 10. Package Drawing for the index mark.
3
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Pin Function
(1/2)
Symbol
Description
A/DQ0 to A/DQ21
Synchronous address input/data input/output
These pins are used as address input pins and data input/output pins.
When they are used as address input pins, the input address is latched at the rising edge of CLK. When the
address is latched, the setup time and hold time must be satisfied at the rising edge of CLK.
When they are used as data input/output pins, the input data is latched at the rising edge of CLK. When
data is input, the setup time and hold time must be satisfied at the rising edge of CLK. Data is output from
these pins at the rising edge of CLK.
DQ22 to DQ31
Synchronous data input/output.
While the A/DQ pins function as address input pins and data input/output pins, these pins function only as
data input/output pins.
The input data is latched at the rising edge of CLK. When data is input, the setup time and hold time must
be satisfied at the rising edge of CLK. Data is output at the rising edge of CLK.
Input clock.
CLK
Addresses and control signals are latched in synchronization with this signal.
All the synchronous input signals must satisfy the setup time and hold time at the rising edge of CLK.
Synchronous address valid input signal.
/ADV
An address is latched at the rising edge of CLK while /ADV is LOW. When the address is latched, the setup
time and hold time must be satisfied at the rising edge of CLK.
Note: This signal serves as an asynchronous signal when the mode register set or read.
Synchronous chip enable input.
/CE1
This device is active while /CE1 is LOW. When inputting /CE1, the setup time and hold time must be
satisfied at the rising edge of CLK.
Remark This signal serves as an asynchronous signal when the mode register set or read.
Asynchronous power-down mode input
CE2
/OE
When this signal is made LOW, the device enters the power-down mode status.
CE2 is not synchronized with the clock. It is an asynchronous signal.
Synchronous output enable input.
When this signal is made LOW, read data is output.
When inputting /OE, the setup time and hold time must be satisfied at the rising edge of CLK.
Remark This signal serves as an asynchronous signal when the mode register set or read.
Synchronous write enable input.
/WE
When /WE inputs a LOW at the same time as /ADV, the device recognizes a write operation. When inputting
/WE, the setup time and hold time must be satisfied at the rising edge of CLK.
Remark This signal serves as an asynchronous signal when the mode register is set or read.
4
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
(2/2)
Symbol
DM0 to DM3
Description
Synchronous write data mask input.
These signals can mask write data during burst write.
To input data mask, the setup time and hold time must be satisfied at the rising edge of CLK.
Data mask can be controlled in byte units.
DM0: A/DQ0 to ADQ7
DM1: A/DQ8 to ADQ15
DM2: A/DQ16 to ADQ21, DQ22 to DQ23
DM3: DQ24 to DQ31
/WAIT
VDD
Synchronous wait output.
/WAIT is a status signal (output) that indicates the preparation for starting burst read/burst write
This pin outputs a LOW while the internal circuit is busy, and a HIGH when it is ready.
The wait signal is output at the rising edge of CLK.
Supply voltage:
Usually, the supply voltage is 1.85 V. Refer to DC Characteristics and Recommended Operation
Conditions.
VSS
Supply voltage:
Ground
VDDQ
Supply voltage:
Supply voltage for DQ. Usually, this voltage is 1.85 V. Refer to DC Characteristics and Recommended
Operation Conditions.
VSSQ
NC
Supply voltage:
Ground for DQ.
No connection
Some signals can be applied because this pin is not internally connected.
5
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Block Diagram
VDD
Standby mode control
VSS
V
DD
Q
Refresh
state
control
Refresh
control
V
SSQ
Refresh
counter
Memory cell array
134,217,728 bits
Row
decoder
Address buffer
Address latch
/ADV
Sense amplifier /
Switching circuit
Column decoder
/CE1
Data control
/WAIT
Command
control
CE2
/WE
Burst
counter
Latch circuit
DM0 to DM3
/OE
Clock
control
CLK
Input / Output buffer
A/DQ0 to A/DQ21 DQ22 to DQ31
6
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Truth Table
Mode
/CE1
CE2
H
CLK
/ADV
/OE
×
/WE
×
A/DQ0-A/DQ21 , DQ22-DQ31
Deselect (Standby Mode 1)
Power Down (Standby Mode 2) Note1
Output Disable
H
×
×
×
×
L
H
L
L
×
×
High-Z
L
×
×
×
High-Z
L
H
H
H
×
×
High-Z
Start Address Latch Note2
Start Address not Latch Note3
Read Command input Note2
Write Command input Note2
Burst Read Termination Note4
Burst Write Termination Note4
×
High-Z
×
Low-Z or High-Z
High-Z
H
H
×
H
L
High-Z
L to H
×
Low-Z to High-Z
High-Z
×
×
Notes1. CE2 pin must be fixed HIGH except Standby Mode 2 (refer to 2.3 Standby Mode Status Transition).
2. Start address latch and read/write command input are performed at the next rising edge of clock when /ADV
is transferred HIGH to LOW.
3. It is impossible that Start address latch and read/write command input are performed at the first rising edge
of clock during /ADV is fixed HIGH.
4. Refer to 3.6 Burst Read Termination, 3.7 Burst Write Termination.
Remark H, HIGH: VIH, L, LOW: VIL, ×: VIH or VIL
For read/write operation, refer to 7 Timing Charts.
7
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
CONTENTS
1. Initialization................................................................................................................................................ 10
2. Partial Refresh ........................................................................................................................................... 11
2. 1 Standby Mode......................................................................................................................................................... 11
2. 2 Density Switching ................................................................................................................................................... 11
2. 3 Standby Mode Status Transition............................................................................................................................. 11
2. 4 Addresses for Which Partial Refresh Is Supported................................................................................................. 12
3. Burst Operation ......................................................................................................................................... 13
3. 1 Features of Burst Operation ................................................................................................................................... 13
3. 2 Latency................................................................................................................................................................... 13
3. 3 Burst Length, Burst Sequence, Wrap Around......................................................................................................... 16
3. 4 Burst Read End ...................................................................................................................................................... 17
3. 5 Burst Write End ...................................................................................................................................................... 18
3. 6 Burst Read Termination.......................................................................................................................................... 19
3. 7 Burst Write Termination.......................................................................................................................................... 20
3. 8 /WAIT signal behavior............................................................................................................................................. 21
3. 9 /WAIT output........................................................................................................................................................... 21
4. Mode Register Settings............................................................................................................................. 23
4. 1 Mode Register Setting Method ............................................................................................................................... 23
4. 1. 1 Cautions for Setting Mode Register............................................................................................................. 23
4. 1. 2 Mode Register Setting/Reading................................................................................................................... 25
4. 1. 3 Partial refresh Density ................................................................................................................................. 25
4. 1. 4 Burst length ................................................................................................................................................. 25
4. 1. 5 Function mode............................................................................................................................................. 26
4. 1. 6 Driver strength............................................................................................................................................. 26
4. 1. 7 Read Latency .............................................................................................................................................. 26
4. 1. 8 Single Write................................................................................................................................................. 26
4. 1. 9 Valid Clock Edge ......................................................................................................................................... 26
4. 1. 10 Reset to Asynchronous.............................................................................................................................. 26
4. 1. 11 /WE control................................................................................................................................................ 26
4. 1. 12 Setting of unused bits................................................................................................................................ 26
4. 2 Mode Register Reading.......................................................................................................................................... 27
4. 2. 1 Cautions for Setting Mode Register............................................................................................................. 27
4. 2. 2 Data read from mode register...................................................................................................................... 27
5. Address, /OE, /WE, DM control ................................................................................................................ 29
5. 1 Relation of address inputs and /OE control ............................................................................................................ 29
5. 2 Address Latching.................................................................................................................................................... 30
5. 3 Read / Write Command Loading............................................................................................................................. 32
5. 4 /OE control during burst read operation.................................................................................................................. 34
5. 4. 1 /OE HIGH to LOW during burst read operation ........................................................................................... 34
5. 4. 2 /OE LOW to HIGH during burst read operation ........................................................................................... 35
5. 5 Write data mask signal (DM) control....................................................................................................................... 36
5. 5. 1 Controlling write data mask signal (DM) in write cycle................................................................................. 36
5. 5. 2 Write data mask (DM) truth table................................................................................................................. 37
8
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
6. Electrical Specifications ........................................................................................................................... 38
7. Timing Charts............................................................................................................................................. 43
8. Mode Register Setting/Read Timing........................................................................................................ 49
8. 1 Mode Register Setting Timing ................................................................................................................................ 49
8. 2 Mode Register Setting Flow Chart.......................................................................................................................... 50
8. 3 Mode Register Read Timing................................................................................................................................... 51
8. 4 Mode Register Read Flow Chart............................................................................................................................. 52
9. Standby Mode Timing Charts................................................................................................................... 53
10. Package Drawing..................................................................................................................................... 54
11. Recommended Soldering Conditions ................................................................................................... 55
9
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
1. Initialization
Initialize the μPD46128953-X at power application using the following sequence to stabilize internal circuits.
(1) Following power application, make CE2 HIGH after fixing CE2 to LOW for the period of tVHMH.
Make /CE1 HIGH before making CE2 HIGH.
(2) /CE1 and CE2 are fixed HIGH for the period of tMHCL.
Normal operation is possible after the completion of initialization.
Figure 1-1. Initialization Timing Chart
Normal Operation
Initialization
/CE1 (Input)
CE2 (Input)
t
CHMH
tMHCL
t
VHMH
VDD
VDD (MIN.)
Cautions1. Make CE2 LOW when starting the power supply.
2. tVHMH is specified from when the power supply voltage reaches the prescribed minimum value
(VDD (MIN.)).
Initialization Timing
Parameter
Symbol
MIN.
50
MAX.
Unit
μs
Power application to CE2 LOW hold
tVHMH
/CE1 HIGH to CE2 HIGH
tCHMH
tMHCL
0
ns
Following power application CE2 HIGH hold to /CE1 LOW
300
μs
10
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
2. Partial Refresh
2. 1 Standby Mode
In addition to the regular standby mode (Standby Mode 1) with a 128M bits density, Standby Mode 2, which performs
partial refresh, is also provided.
2. 2 Density Switching
In Standby Mode 2, the densities that can be selected for performing refresh are 64M bits, 32M bits, 16M bits, and 0M
bit.
The density for performing refresh can be set with the mode register. Once the refresh density has been set in the
mode register, these settings are retained until they are set again, while applying the power supply. However, the mode
register setting will become undefined if the power is turned off, so set the mode register again after power application.
(For how to perform mode register settings, refer to section 4. Mode Register Settings.)
2. 3 Standby Mode Status Transition
In Standby Mode 1, /CE1 and CE2 are HIGH. In Standby Mode 2, CE2 is LOW. In Standby Mode 2, if 0M bit is set as
the density, it is necessary to perform initialization the same way as after applying power, in order to return to normal
operation from Standby Mode 2. When the density has been set to 64M bits, 32M bits, or 16M bits in Standby Mode 2, it
is not necessary to perform initialization to return to normal operation from Standby Mode 2.
For the timing charts, refer to Figure 9-1. Standby Mode 2 (data hold: 64M bits / 32M bits / 16M bits) Entry / Exit
Timing Chart, Figure 9-2. Standby Mode 2 (data not held) Entry / Exit Timing Chart.
11
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 2-1. Standby Mode State Machine
Power On
Initialization
Mode Register
Setting
CE2 = VIH
/CE1 = VIL
Active
CE2 = VIL
/CE1 = VIH
CE2 = VIH
,
CE2 = VIL
/CE1 = VIL
,
/CE1 = VIL
,
CE2 = VIH
CE2 = VIH
Standby Mode 2
(64M bits / 32M bits
/ 16M bits)
CE2 = VIL
CE2 = VIL
Standby
Mode 1
Standby Mode 2
(Data not held)
2. 4 Addresses for Which Partial Refresh Is Supported
Data hold density
Correspondence address
000000H to 1FFFFFH
000000H to 0FFFFFH
000000H to 07FFFFH
64M bits
32M bits
16M bits
12
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. Burst Operation
3. 1 Features of Burst Operation
Function
Features
Burst Length
8 double words
Wrap
Burst Wrap
Burst Sequence
Linear
Valid Clock Edge
CLK Rising Edge
6, 7, 8
Latency Count
Read Latency
Write Latency
5, 6, 7
3. 2 Latency
Read Latency (RL) is the number of clock cycles between the address being latched and first read data becoming
available during synchronous burst read operation. It is set through Mode Register Set sequence after power-up. Once
RL is set through Mode Register Set sequence, write latency, that is the number of clock cycles between address being
latched and first write data being latched, is automatically set to RL−1.
Latency Count
Grade
Clock Frequency
<83 MHz
Read Latency
7, 8
Write LatencyNote
6, 7
-E12X
-E15X
<66 MHz
6, 7, 8
5, 6, 7
Note Write Latency = Read Latency−1
13
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 3-1. Latency Configuration (Read)
T8
T7
T11
T9
T10
T4
T5
T12
T13
T0
T1
T2
T3
T6
CLK (Input)
/ADV (Input)
/CE1 (Input)
Read Latency = 6
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Add
Q1
Q1
Q5
Q6
Q7
Q7
Q0
Q4
Q2
Q2
Q3
Q5
Q6
Q0
Q4
Q3
Read Latency = 7
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Add
Add
Q5
Q5
Q6
Q6
Q0
Q0
Q1
Q1
Q4
Q4
Q2
Q2
Q3
Q3
Read Latency = 8
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Q0
Q0
Q1
Q1
Q4
Q4
Q5
Q5
Q2
Q2
Q3
Q3
14
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 3-2. Latency Configuration (Write)
T8
T7
T11
T9
T10
T4
T5
T12
T13
T0
T1
T2
T3
T6
CLK (Input)
/ADV (Input)
/CE1 (Input)
Write Latency = 5
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
Add
D5
D6
D7
D7
D0
D1
D4
D2
D2
D3
D0
D1
D3
D4
D5
D6
Write Latency = 6
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
Add
Add
D5
D5
D6
D6
D7
D7
D0
D0
D1
D1
D4
D4
D2
D2
D3
D3
Write Latency = 7
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
D5
D5
D6
D6
D0
D0
D1
D1
D4
D4
D2
D2
D3
D3
15
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 3 Burst Length, Burst Sequence, Wrap Around
The burst length is 8 double words and the corresponding address is (A/DQ2, A/DQ1, A/DQ0). A burst operation that
extends over addresses higher than A/DQ3 cannot be executed.
Wrap-around is performed within the burst length of 8 double words. Refer to Table 3-1. Burst Sequence.
Table 3-1. Burst Sequence
Start Address
Burst Sequence
(A/DQ2 , A/DQ1, A/DQ0)
Linear , Wrap
1st data - 2nd data - 3rd data - 4th data - 5th data - 6th data - 7th data - 8th data
(0, 0, 0) - (0, 0, 1) - (0, 1, 0) - (0, 1, 1) - (1, 0, 0) - (1, 0, 1) - (1, 1, 0) - (1, 1, 1)
(0, 0, 1) - (0, 1, 0) - (0, 1, 1) - (1, 0, 0) - (1, 0, 1) - (1, 1, 0) - (1, 1, 1) - (0, 0, 0)
(0, 1, 0) - (0, 1, 1) - (1, 0, 0) - (1, 0, 1) - (1, 1, 0) - (1, 1, 1) - (0, 0, 0) - (0, 0, 1)
(0, 1, 1) - (1, 0, 0) - (1, 0, 1) - (1, 1, 0) - (1, 1, 1) - (0, 0, 0) - (0, 0, 1) - (0, 1, 0)
(1, 0, 0) - (1, 0, 1) - (1, 1, 0) - (1, 1, 1) - (0, 0, 0) - (0, 0, 1) - (0, 1, 0) - (0, 1, 1)
(1, 0, 1) - (1, 1, 0) - (1, 1, 1) - (0, 0, 0) - (0, 0, 1) - (0, 1, 0) - (0, 1, 1) - (1, 0, 0)
(1, 1, 0) - (1, 1, 1) - (0, 0, 0) - (0, 0, 1) - (0, 1, 0) - (0, 1, 1) - (1, 0, 0) - (1, 0, 1)
(1, 1, 1) - (0, 0, 0) - (0, 0, 1) - (0, 1, 0) - (0, 1, 1) - (1, 0, 0) - (1, 0, 1) - (1, 1, 0)
(0, 0, 0)
(0, 0, 1)
(0, 1, 0)
(0, 1, 1)
(1, 0, 0)
(1, 0, 1)
(1, 1, 0)
(1, 1, 1)
16
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 4 Burst Read End
The memory output goes into a high impedance state after completion of the burst read operation of the eighth double
word. Therefore, no data is output from the memory even if CLK is kept input while /CE1 = LOW after the burst read
operation of 8 words has been completed.
Figure 3-3. Burst Read End
T13
T14
T9
T10
T11
T12
T15
CLK (Input)
H
/ADV (Input)
/CE1 (Input)
L
/OE (Input)
L
t
AC
t
HZ
High-Z
A/DQ0 to A/DQ21 (Output)
DQ22 to DQ31 (Output)
Q5
Q5
Q6
Q7
High-Z
Q6
Q7
Remark Memory output goes into a high impedance state after the last data (Q7) read by the burst operation has
been output.
17
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 5 Burst Write End
The memory does not input write data to internal circuits even if CLK is kept input with /CE1 = LOW and write data is
input from the controller after completion of a burst write operation of 8 double words.
Figure 3-4. Burst Write End
T12
T13
T8
T9
T10
T11
T14
CLK (Inout)
H
L
/ADV (Input)
/CE1 (Input)
/WE (Input)
t
WDS
t
WDH
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
D5
D5
D6
B
B
D7
D7
A
A
C
C
D6
Remark The memory does not input any write data to internal circuits even if write data (A, B, or C) is input after the
last burst write data (D7) has been input, as shown in Figure 3-4.
18
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 6 Burst Read Termination
A burst read termination is executed when /CE1 is made HIGH during a burst read operation. The command that the
burst read termination (/CE1 = HIGH) is recognized at the next rising edge of CLK when /CE1 = HIGH, the read data is
output before the command of the burst read termination (/CE1 = HIGH) is input.
Figure 3-5. Burst Read Termination
T4
T5
T6
T7
T8
T9
T10
CLK (Input)
H
/ADV (Input)
/CE1 (Input)
t
CEH
t
CES
L
/OE (Input)
A/DQ0-A/DQ21 (Output)
DQ22-DQ31 (Output)
t
HZ
t
AC
High-Z
High-Z
Q0
Q1
Q2
Q3
Q4
Q0
Q1
Q2
Q3
Q4
Remark If the burst read termination is performed (/CE1: LOW → HIGH) before the rising edge of CLK in T8, as
shown in Figure 3-5, determined data is output as the read data (Q4) from the rising edge of CLK in T7.
The burst read termination is valid after the initial read data has been output.
(For the burst read termination, refer to Figure 7-5. Burst Read Termination Cycle Timing Chart (/CE1 control).)
19
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 7 Burst Write Termination
A burst write termination is executed when /CE1 is made HIGH during a burst write operation. The command that the
burst write termination (/CE1 = HIGH) is recognized at the next rising edge of CLK when /CE1 = HIGH, the write data is
written before the command of the burst write termination (/CE1 = HIGH) is input.
Figure 3-6. Burst Write Termination
T7
T8
T3
T4
T5
T6
T9
CLK (Input)
H
/ADV (Input)
/CE1 (Input)
tCEH
t
CES
/WE (Input)
t
WDS
t
WDH
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
D3
D3
D4
D0
D0
D1
D5
D5
D2
D4
D1
D2
Remark If the burst write termination is performed (/CE1: LOW → HIGH) before the rising edge of CLK in T8, as
shown in Figure 3-6, the write data is input to memory at the rising edge of CLK in T7. The write data input
in cycle T8 (D5) is invalid.
The burst termination is valid after the initial write data has been input.
(For the burst write termination refer to Figure 7-6. Burst Write Termination Cycle Timing Chart (/CE1 control).)
20
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
3. 8 /WAIT signal behavior
/WAIT is a status signal (output) that indicates the preparation for starting burst read/burst write
This pin outputs a LOW while the internal circuit is busy, and a HIGH when it is ready.
The wait signal is output at the rising edge of CLK.
Table 3-2. Relation Between Internal Operation of Memory and /WAIT Output
Internal Operation of Memory
Preparation for burst read/burst write in progress
Completion of preparation for burst read/burst write
/WAIT output
LOW
HIGH
3. 9 /WAIT output
The /WAIT output is enabled after specified time from CLK. /WAIT output is transferred LOW to HIGH one cycle before
1st burst read data output and 1st burst write data input.
Figure 3-7. /WAIT Output Timing (Read Cycle)
T0
T1
T2
T3
T4
T5
T6
CLK (Input)
/ADV (Input)
Read Latency = 6
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Add
Q0
Q0
tCEWA
tCLWA
1 cycle before latency cycle
/WAIT (Output)
21
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 3-8. /WAIT Output Timing (Write Cycle)
T0
T1
T2
T3
T4
T5
T6
CLK (Input)
/ADV (Input)
Write Latency = 5
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
Add
D0
D0
D1
D1
t
CEWA
t
CLWA
1 cycle before latency cycle
/WAIT (Output)
22
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
4. Mode Register Settings
The default value of the mode register of the μPD46128953-X is undefined upon power application. Therefore, be sure
to set the mode register after power application and initialization.
4. 1 Mode Register Setting Method
Each mode can be set by performing a total of six cycles of operations in succession after reading the most significant
address (3FFFFFH) – two consecutive cycles for writing any data and three consecutive cycles for writing specific data
(codes 1 to 3) – by an asynchronous access (with CLK fixed HIGH or LOW).
Table 4-1. Mode Register Settings
Cycle
1st cycle
Operation
Address
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
Data
Read
Write
Write
Write
Write
Write
Don’t care
Don’t care
Don’t care
2nd cycle
3rd cycle
4th cycle
5th cycle
6th cycle
Code 1 (A/DQ0 = 1)
Code 2
Code 3
Codes 1 to 3 are set at the register. The register has a function to latch an address and data necessary for instruction
execution, and does not occupy the memory.
Whether the mode register is set or read can be selected by code 1 in the 4th bus cycle. If setting of the mode register
is selected (A/DQ0 = 1) by code 1 in the 4th bus cycle, the contents of the mode register are set by code 2 in the 5th bus
cycle and code 3 in the 6th bus cycle.
The command contents are shown in Table 4-2. Mode Register Code 1 Definition (4th cycle), Table 4-3. Mode
Register Code 2 Definition (5th cycle), and Table 4-4. Mode Register Code 3 Definition (6th cycle).
For the timing chart and flowchart, refer to Figure 8-1. Mode Register Setting Timing Chart and Figure 8-2. Mode
Register Setting Flowchart.
If reading the mode register is selected by code 1 in the 4th bus cycle (A/DQ = 0), the contents of the mode register
currently set in the 5th and 6th bus cycles can be read. If the mode register is read before it is set, any (undefined) data
is read.
For the mode register, refer to 4.2 Mode Register Reading.
4. 1. 1 Cautions for Setting Mode Register
When the mode register is set, the status of the internal counter is identified by the toggle operation of /CE1 and /OE.
When setting a mod entry, therefore, perform a toggle operation of /CE1 in each cycle (one read cycle and five write
cycles).
In the 1st bus cycle (read cycle), perform a toggle operation of /OE in the same manner as /CE1. If an illegal address
or data is written or if an address and data are written in an incorrect sequence, the mode register is not correctly set.
If the most significant address (3FFFFFH) is read (in the 1st bus cycle), written (2nd bus cycle), and then written (3rd
bus cycle), a sequence of setting/reading the mode register is started. Therefore, setting of the mode register cannot be
stopped after the 4th bus cycle. If the normal sequence is executed up to the 5th bus cycle, setting of the mode register
cannot be stopped until the 6th bus cycle is completed.
23
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Once the mode register has been set, the setting is retained while power is supplied and CE2 = HIGH, until it is re-set.
If data is not retained by turning off the power or making CE2 LOW (except partial), however, the setting of the mode
register is undefined. Re-set the register after power application or when returning from a data non-retention status.
For the timing chart and flowchart, refer to Figure 8-1. Mode Register Setting Timing Chart and Figure 8-2. Mode
Register Setting Flowchart.
Table 4-2. Mode Register Code1 Definition (4th Bus Cycle)
Data Code
A/DQ0
Symbol
RW
Function
Value
0
Description
Mode Register Reading
Mode Register Setting
Reserved
Mode Register Setting /
Mode Register Reading
1
A/DQ21 to A/DQ1
DQ31 to DQ22
−
−
−
−
All “1”
All “1”
Reserved
Table 4-3. Mode Register Code2 Definition (5th Bus Cycle)
Data Code
Symbol
PR
Function
Value
00
Description
A/DQ1 to A/DQ0
Partial Refresh Density
32M
01
16M
10
64M
11
0M
A/DQ4 to A/DQ2
BL
Burst length
000
001
010
011
100
101
110
111
0
Reserved
Reserved
8 double words
Reserved
Reserved
Reserved
Reserved
Reserved
Synchronous Burst
Reserved
Strong
A/DQ5
M
Function Mode
Driver Strength
1
A/DQ7 to A/DQ6
DS
00
01
Reserved
Weak
10
11
Middle
A/DQ21 to A/DQ8
DQ31 to DQ22
–
–
–
–
All “1”
All “1”
Reserved
Reserved
24
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Table 4-4. Mode Register Code3 Definition (6th Bus Cycle)
Data Code
Symbol
RL
Function
Value
000
001
010
011
100
101
110
111
1
Description
A/DQ2 to A/DQ0
Read Latency
Reserved
Reserved
Reserved
Reserved
6
7
8
Reserved
Reserved
A/DQ3
A/DQ4
N/A
SW
N/A
Single Write
0
Burst Read & Burst Write
Reserved
1
A/DQ5
VE
Valid Clock Edge
0
Reserved
1
Rising Edge
Reserved
A/DQ6
A/DQ7
RP
Reset to Asynchronous
/WE Control
1
WC
0
/WE Pulse Control
Reserved
1
A/DQ21 to A/DQ8
DQ31 to DQ22
−
−
−
−
1
Reserved
1
Reserved
4. 1. 2 Mode Register Setting/Reading
Select whether to set the mode register or read the set contents of the register by this item.
If 1 is input to A/DQ0 in the 4th cycle, the mode register setting mode is set. If 0 is input to A/DQ0 in the 4th cycle, the
mode register reading mode is set.
For how to read the mode register, refer to 4.2 Mode Register Reading.
4. 1. 3 Partial refresh Density
The partial refresh area is set by this item. If 00 are input to A/DQ1 and A/DQ0 in the 5th cycle, it is set that 32M bits
are retained. If 01 are input to A/DQ1 and A/DQ0 in the 5th cycle, it is set that 16M bits are retained. If 10 are input to
A/DQ1 and A/DQ0 in the 5th cycle, it is set that 64M bits are retained. If 11 are input to A/DQ1 and A/DQ0 in the 5th
cycle, it is set that all bits are not retained.
4. 1. 4 Burst length
The burst length is set by this item. If 010 are input to A/DQ4, A/DQ3, and A/DQ2 in the 5th cycle, the burst length is
set to 8. This product supports only a burst length of 8.
25
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
4. 1. 5 Function mode
The burst read mode is set by this item. If 0 is input to A/DQ5 in the 5th cycle, the burst mode is set.
Be sure to input 0 to A/DQ5.
4. 1. 6 Driver strength
The output driver strength is set by this item. If 00 are input to A/DQ7 and A/DQ6 in the 5th cycle, the output driver
strength is set to Strong. If 11 are input to A/DQ7 and A/DQ6 in the 5th cycle, the output driver strength is set to Middle.
If 10 are input to A/DQ7 and A/DQ6 in the 5th cycle, the output driver strength is set to Weak.
4. 1. 7 Read Latency
The read latency count is set by this item. If 100 are input to A/DQ2, A/DQ1, and A/DQ0 in the 6th cycle, the read
latency is set to 6. If 101 are input to A/DQ2, A/DQ1, and A/DQ0 in the 6th cycle, the read latency is set to 7. If 110 are
input to A/DQ2, A/DQ1, and A/DQ0 in the 6th cycle, the read latency is set to 8. Write latency is automatically set RL-1.
4. 1. 8 Single Write
The write mode is set by this item, if 0 is input to A/DQ4 in the 6th cycle, the write mode is set to burst write.
Be sure to input 0 to A/DQ4.
4. 1. 9 Valid Clock Edge
The valid clock edge (Rising edge or Falling edge) is set in the burst mode. If 1 is input to A/DQ5 in the 6th cycle,
rising edge is set to valid clock edge.
4. 1. 10 Reset to Asynchronous
This function is not available now and reserved for future function. Be sure to input 1 to A/DQ6.
4. 1. 11 /WE control
The input timing of /WE is set by this item. If 0 is input to A/DQ7 in the 6th cycle, the input timing of /WE is set to be
the same as the timing of loading an address (/WE = LOW while /ADV = LOW). Refer to 5.3 Loading Command
(read/write).
Be sure to input 0 to A/DQ7.
4. 1. 12 Setting of unused bits
Some of the undefined bits are used to enter a test mode that is not disclosed. Therefore, be sure to input 1 to the
undefined bits (A/DQ21 to A/DQ1 and DQ31 to DQ22 in the 4th cycle, A/DQ21 to A/DQ8 and DQ31 to DQ22 in the 5th
cycle, and A/DQ3, A/DQ21 to A/DQ8, and DQ31 to DQ22 in the 6th cycle).
26
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
4. 2 Mode Register Reading
If 0 is set to A/DQ0 in the 4th cycle after reading the most significant address (3FFFFFH) – two consecutive cycles for
writing any data, it is possible to read current setting value of code 2 in the 5th cycle and current setting value of code 3 in
the 6th cycle
Table 4-5. Mode Register Settings
Cycle
1st cycle
Operation
Address
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
3FFFFFH
Data
Read
Write
Write
Write
Read
Read
Don’t care
Don’t care
Don’t care
2nd cycle
3rd cycle
4th cycle
5th cycle
6th cycle
Code 1 (A/DQ0 = 0)
Code 2
Code 3
Codes 1 to 3 are written to the register. The register has a function to latch an address and data necessary for
instruction execution, and does not occupy the memory.
For the timing chart and flowchart, refer to Figure 8-3. Mode Register Read Timing Chart and Figure 8-4. Mode
Register Read Flowchart.
4. 2. 1 Cautions for Setting Mode Register
When the mode register is set, the status of the internal counter is identified by the toggle operation of /CE1 and /OE.
When setting the mode register, therefore, perform a toggle operation of /CE1 in each cycle (one read cycle, three write
cycles, and two mode register read cycles). In the 1st bus cycle (read cycle) and 5th and 6th bus cycles, perform a
toggle operation of /OE in the same manner as /CE1. If an illegal address or data is written or if the codes are written in
an incorrect sequence, reading the mode register fails and the mode register is not read correctly.
If the most significant address (3FFFFFH) is read (in the 1st bus cycle), written (2nd bus cycle), and then written (3rd
bus cycle), a sequence of setting/reading the mode register is started. Therefore, setting of the mode register cannot be
stopped after the 4th bus cycle. If the normal sequence is executed up to the 3rd bus cycle, setting of the mode register
cannot be stopped until the 6th bus cycle is completed.
4. 2. 2 Data read from mode register
If reading the mode register is started, the contents of currently set code 2 (partial refresh density, burst length, function
mode, and driver strength) can be read in the 5th bus cycle. In the 6th bus cycle, the contents of currently set code 3
(read latency, single write, valid clock edge, reset to asynchronous, and /WE control) can be read. If the mode register is
read before it is set, any (undefined) data is output.
Set or read the mode register in compliance with the AC specifications in Table 4-6.
27
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Table 4-6. AC Specification of Mode Register Setting / Reading
Item
Symbol
-E12X, -E15X
Unit
MIN.
MAX.
Specification of Mode Register Setting / Reading
Cycle time
tMSC
90
6
10000
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address setup time to /ADV = HIGH
Address hold time to /ADV = HIGH
/CE1 setup time to /ADV = HIGH
Address setup time to /OE = LOW
/ADV Low pulse width
tAS
tAH
1
tCS
6
tAOSM
tVPL
tOLZM
tACM
tCHZM
tOHZM
tDW
0
6
/OE to output in low impedance
/OE to output valid
5
30
10
10
/CE1 to output in high impedance
/OE to output in high impedance
Write data setup time to /WE = HIGH
Write data hold time to /WE = HIGH
/CE1 HIGH pulse width
20
0
tDH
tCP
10
50
50
/WE LOW pulse width
tWP
/OE LOW pulse width
tOVL
For the timing chart and flowchart, refer to Figure 8-1. Mode Register Setting Timing Chart, Figure 8-2. Mode
Register Setting Flowchart, Figure 8-3. Mode Register Read Timing Chart and Figure 8-4. Mode Register Read
Flowchart.
28
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. Address, /OE, /WE, DM control
5. 1 Relation of address inputs and /OE control
This product uses only one pin to input an address and input/output DQ. Consequently, a bus fight may occur between
an address input from the controller and data output from the memory and, therefore, the timing must be considered.
Data is output after specified tOLZ from the first rising edge of CLK when /OE has changes its level from HIGH to LOW.
Therefore, complete inputting an address from the controller before the first rising edge of CLK when /OE has changed
its level from HIGH to LOW.
Figure 5-1. Address inputs and /OE Timing
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK (Input)
/ADV (Input)
/CE1 (Input)
t
AH
tOEH
t
OES
t
OLZ
/OE (Input)
t
ACH
t
AOS
High-Z
A/DQ0 to A/DQ21 (Input/Output)
Add
Q0
Q1
Q2
Read Latency = 6
High-Z
DQ22 to DQ31 (Output)
Q0
Q1
Q2
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
29
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 2 Address Latching
An address is latched at the first rising edge of CLK when /ADV changes its level from HIGH to LOW while /CE1 =
LOW. An address can be latched and a read or write operation can be started as soon as the memory has changed its
status from standby (/CE1 = HIGH) to active (/CE1 = LOW). If the period in which /ADV = LOW while /CE1 = LOW
extends over two or more CLK as shown in Figure 5-4, an address is latched at the first rising edge of CLK after /ADV =
LOW.
Figure 5-2. Address Latched Timing 1
T0
T1
T2
CLK (Input)
/ADV (Input)
tCHV
t
CSV
tCHV
t
AH
t
CES
/CE1 (Input)
t
ACS
t
ACH
A/DQ0 to A/DQ21 (Input)
Add
Address Latched
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
30
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 5-3. Address Latched Timing 2
T0
T1
T2
CLK (Input)
/ADV (Input)
tCHV
t
CSV
tCHV
t
AH
t
CES
/CE1 (Input)
t
ACS
tACH
A/DQ0 to A/DQ21 (Input)
Add
Address Latched
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
Figure 5-4. Address Latched Timing 3
T0
T1
T2
CLK (Input)
/ADV (Input)
tCHV
t
CSV
t
CHV
t
AH
t
CES
/CE1 (Input)
t
ACS
t
ACH
Add
A/DQ0 to A/DQ21 (Input)
Address Latched
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
31
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 3 Read / Write Command Loading
A command (read/write) is loaded in the same timing as an address (refer to 6.2 Address Latching). If /WE = HIGH
at that time, a read operation is started; if /WE = LOW, a write operation is started. Figure 5-5 shows a read operation
and Figure 5-6 shows a write operation. If /WE = LOW in the cycle next to that in which an address is loaded as shown in
Figure 5-7, a write operation is not recognized. The operation in Figure 5-7 is a read operation.
Figure 5-5. Command Loading Timing 1
T0
T1
T2
CLK (Input)
tCHV
t
CSV
t
CHV
/ADV (Input)
/CE1 (Input)
t
CES
H
/OE (Input)
/WE (Input)
t
WES
t
WEH
Command Input
Remarks 1. Figure 5-5 shows a read operation
2. Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
32
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 5-6. Command Loading Timing 2
T0
T1
T2
CLK (Input)
tCHV
t
CSV
t
CHV
/ADV (Input)
/CE1 (Input)
t
CES
H
/OE (Input)
/WE (Input)
t
WES
t
WEH
Command Input
Remarks 1. Figure 5-6 shows a write operation
2. Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
Figure 5-7. Command Loading Timing 3
T0
T1
T2
CLK (Input)
tCHV
t
CHV
t
CSV
/ADV (Input)
/CE1 (Input)
t
CES
H
/OE (Input)
/WE (Input)
t
WES
t
WEH
t
WES
t
WEH
Command Input
Remarks 1. Figure 5-7 shows a read operation
2. Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
33
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 4 /OE control during burst read operation
5. 4. 1 /OE HIGH to LOW during burst read operation
The output is controlled depending on the status of /OE (HIGH or LOW) when CLK rises. As shown in Figure 5-8, if
/OE is made from LOW to HIGH before the rising edge of CLK in T8 during burst read, the read data (Q4) output from the
rising edge of CLK in T7 is output. However, the read data that is output from the rising edge of CLK in T8 is not output.
Figure 5-8. /OE HIGH to LOW during burst read operation Timing
T4
T5
T6
T7
T8
T9
T10
CLK (Input)
H
/ADV (Input)
/CE1 (Input)
L
tOEH
t
OES
/OE (Input)
t
AC
t
HZ
tOH
High-Z
A/DQ0 to A/DQ21 (Output)
DQ22 to DQ31 (Output)
Q0
Q0
Q1
Q2
Q3
Q4
High-Z
Q1
Q2
Q3
Q4
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
34
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 4. 2 /OE LOW to HIGH during burst read operation
The output is controlled depending on the status of /OE (HIGH or LOW) when CLK rises. As shown in Figure 5-9, if
/OE is made from HIGH to LOW before the rising edge of CLK in T8 during burst read, the read data (Q5) output from the
rising edge of CLK in T8 is output. Because /OE = HIGH until cycle T7, the read data (Q0, Q1, Q2, Q3, and Q4) that
should be output when /OE = LOW are not output, but go into a high impedance state.
Figure 5-9. /OE LOW to HIGH during burst read operation Timing
T4
T5
T6
T7
T8
T9
T10
CLK (Input)
H
L
/ADV (Input)
/CE1 (Input)
tOEH
t
OES
/OE (Input)
tOAC
t
OLZ
High-Z
Q0
Q4
A/DQ0 to A/DQ21 (Output)
Q1
Q2
Q3
Q3
Q5
Q6
Q7
Q7
High-Z
Q0
Q4
DQ22 to DQ31 (Output)
Q1
Q2
Q5
Q6
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification.
35
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 5 Write data mask signal (DM) control
This section explains how to control the write data mask signal (DM). DM is a signal that masks input data.
Data mask is valid only in the write cycle. Therefore, data can be masked in the burst write cycle but cannot in the
burst read cycle.
The write data mask signal (DM) controls byte unit with one pin.
- DM0 controls A/DQ7 to A/DQ0.
- DM1 controls A/DQ15 to A/DQ8.
- DM2 controls A/DQ21 to A/DQ16 and DQ23 to DQ22.
- DM3 controls DQ31 to DQ24.
5. 5. 1 Controlling write data mask signal (DM) in write cycle
As shown in Figure 5-10, the corresponding write data is masked when the write data mask signal (DM) is HIGH.
Figure 5-10. Command Loading Timing 1
T0
T1
T2
T3
T4
T5
T6
T7
CLK (Input)
/ADV (Inout)
/WE (Input)
tBDH
t
BDS
t
BDH
t
BDS
DM (Input)
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
Add
D0
D0
Mask
Mask
D2
Mask
Mask
D4
D2
D4
Remark Refer to 6. Electrical Specifications, 7. Timing Charts in detail of AC specification
36
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
5. 5. 2 Write data mask (DM) truth table
Table 5-1. Write data mask (DM) truth table
Function
DM
DM0
DM1
DM2
DM3
All A/DQ and DQ write permission
All A/DQ and DQ write prohibition
L
H
A/DQ7 to A/DQ0 write permission
L
×
×
×
H
×
×
×
×
L
×
×
×
H
×
×
×
×
L
×
×
×
H
×
×
×
×
L
×
×
×
H
A/DQ15 to A/DQ8 write permission
DQ23 to DQ22, A/DQ21 to A/DQ16 write permission
DQ31 to DQ24 write permission
A/DQ7 to A/DQ0 write prohibition
A/DQ15 to A/DQ8 write prohibition
DQ23 to DQ22, A/DQ21 to A/DQ16 write prohibition
DQ31 to DQ24 write prohibition
Remark H: VIH, L: VIL, ×: VIH or VIL
37
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
6. Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
VDD
VDDQ
VT
−0.5 Note to +2.5
−0.5 Note to +2.5
−0.5 Note to +2.5
−25 to +85
V
V
Input / Output Supply voltage
Input / Output voltage
V
Operating ambient temperature TA
°C
°C
Storage temperature
Tstg
−55 to +125
Note –1.0 V (MIN.) (Pulse width: 30 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
Symbol
Condition
MIN.
1.7
MAX.
2.0
Unit
V
Note1
VDD
Input / Output Supply voltage
Input HIGH voltage
VDDQ Note1
VIH
1.7
2.0
V
0.8VDDQ
−0.3 Note2
−25
VDDQ +0.3
0.2VDDQ
+85
V
Input LOW voltage
VIL
V
Operating ambient temperature TA
°C
Notes1. Use same voltage condition (VDD = VDDQ).
2. −0.5 V (MIN.) (Pulse width: 30 ns)
Capacitance (TA = 25°C, f = 1 MHz)
Parameter
Input capacitance
Symbol
CIN
Test condition
VIN = 0 V, Input pins
MIN.
TYP.
MAX.
Unit
pF
8
8
Output capacitance
COUT
CDQ
VOUT = 0 V, /WAIT pin
pF
Input / Output capacitance
VDQ = 0 V, A/DQ, DQ pins
10
pF
Remarks 1.
VIN : input voltage, VOUT : output voltage, VDQ : input / output voltage
2. These parameters are not 100% tested.
38
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
Density of
data hold
MIN.
TYP.
MAX.
Unit
Input leakage current
A/DQ, DQ, /WAIT
ILI
VIN = 0 V to VDDQ
−1.0
−1.0
+1.0
+1.0
μA
μA
ILO
VDQ , VOUT = 0 V to VDDQ, /CE1 = VIH
or /WE = VIL or /OE = VIH
leakage current
Operating supply current
ICCA1
ICCA2
ISB1
/CE1 = VIL, Burst length = 1, frequency = 83 MHz
60
55
mA
mA
μA
IDQ = 0 mA
frequency = 66 MHz
Operating supply
Burst current
/CE1 = VIL, Burst length = 8, frequency = 83MHz
40
IDQ = 0 mA
frequency = 66MHz
35
Standby supply current
/CE1 ≥ VDDQ−0.2 V,
CE2 ≥ VDDQ−0.2 V
/CE1 ≥ VDDQ−0.2 V,
CE2 ≤ 0.2 V
128M bits
T.B.D.
ISB2
64M bits
32M bits
16M bits
0M bit
T.B.D.
T.B.D.
T.B.D.
T.B.D.
Output HIGH voltage
Output LOW voltage
VOH
VOL
IOH = −0.5 mA
0.8VDDQ
V
V
IOL = 1 mA
0.2VDDQ
Remark VIN: Input voltage, VOUT: output voltage, VDQ: Input / Output voltage
39
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
Input Waveform (Rise and Fall Time ≤ 3 ns)
V
DD
Q
0.8VDD
Q
VDDQ / 2
Test points
VDDQ / 2
0.2VDD
Q
Q
V
SS
3 ns
Output Waveform
VDDQ / 2
Test Points
VDDQ / 2
Output Load
30 pF
Remark CL includes capacitance of the probe and jig, and stray capacitance.
40
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
AC Specifications
(1/2)
Parameter
Symbol
-E12X
-E15X
Unit
Note
MIN.
MAX.
83
MIN.
MAX.
66
Clock Specifications
Cycle frequency
tCLK
tCH
MHz
ns
CLK HIGH width
3
3
3
3
CLK LOW width
tCL
ns
CLK rise / fall time
tCHCL
3
3
ns
Address Latching Specifications
Address hold time from /ADV = HIGH
Address setup time to CLK
Address hold time to CLK
/ADV = LOW setup time to CLK
/ADV = LOW hold time from CLK
Address setup time to /OE = LOW
/ADV = LOW pulse width
/ADV = LOW to next /ADV = LOW
Control Signals Specifications
/CE1 setup time to CLK
/CE1 hold time to CLK
tAH
1
5
7
5
1
0
6
1
5
7
5
1
0
6
ns
ns
ns
ns
ns
ns
ns
μs
tACS
tACH
tCSV
tCHV
tAOS
tVPL
tCVCV
10
10
1
tCES
tCEH
tOES
tOEH
tWES
tWEH
5
1
5
1
5
1
5
1
5
1
5
1
ns
ns
ns
ns
ns
ns
/OE setup time to CLK
/OE hold time to CLK
/WE setup time to CLK
/WE hold time to CLK
Note 1. tCVCV (MAX.) is applied while /CE1 is being hold at LOW.
41
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
(2/2)
Parameter
Symbol
-E12X
-E15X
Unit
Note
MIN.
MAX.
MIN.
MAX.
Read Specifications
Burst access time
tAC
tOH
tHZ
8
7
8
7
ns
ns
ns
1, 3
1
Output data hold
2
2
CLK to output in high impedance
Write Specifications
2
Write data valid of CLK
Write data hold of CLK
DM setup time to CLK
DM hold time to CLK
tWDS
tWDH
tBDS
tBDH
5
1
5
1
5
1
5
1
ns
ns
ns
ns
/WAIT Specifications
/WAIT LOW output time from CLK
/WAIT HIGH output time from CLK
/WAIT in high impedance from CLK
Others
tCEWA
tCLWA
tCWHZ
8
8
8
8
ns
ns
ns
1
1
2
10
10
/OE to output in low impedance
Output time from /OE HIGH to LOW
during burst read
tOLZ
tOAC
1
1
ns
ns
2
9
9
1, 3, 4
Notes1. Output load: 30 pF
2. Output load: 5 pF
3. In case output driver size is ‘Middle’
4. For tOAC, refer to Figure 5-9. /OE HIGH to LOW during burst read operation timing.
42
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
7. Timing Charts
Figure 7-1. Burst Read Cycle Timing Chart (/CE1 = LOW Consecutive Access)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T0
T1
t
CLK
CLK (Input)
tCH
tCL
t
CHCL
tCHCL
tCVCV
t
CHV
t
CSV
t
CHV
tCHV tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
tAH
tVPL
tAH
t
CES
tOEH
t
OES
t
OLZ
t
OEH OES
t
t
OLZ
OES
tOEH
tOES
tOEH
tOES
t
OEH
t
tOLZ
/OE (Input)
/WE (Input)
t
WES
t
WEH
tWES
tWEH
t
CEWA
tCEWA
t
CLWA
High-Z
/WAIT (Output)
Read Latency = 6
t
AOS
t
AC
t
AC
t
AOS
tHZ
t
ACS
tACH
tACS
t
ACH
tAOS
t
OH
t
AOS
High-Z
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
Add
Q0
Q1
Q1
Q2
Q2
Q3
Q3
Q4
Q4
Q5
Q5
Q6
Q6
Q7
Q7
Add
High-Z
tHZ
High-Z
High-Z
Q0
DQ22 to DQ31 (Output)
Remark The above timing chart assumes read latency is set 6.
43
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 7-2. Burst Read Cycle Timing Chart (/CE1 Toggle Access)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T0
T1
t
CLK
CLK (Input)
tCH
tCL
t
CHCL
tCHCL
tCVCV
t
CHV
t
CSV
t
CHV
tCHV tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
tAH
t
VPL
tAH
t
CEH
tCES
t
CEH
tCES
t
CEH
t
CES
t
CES
tOEH
tOES
tOEH
tOES
tOEH
t
OES
tOLZ
/OE (Input)
/WE (Input)
t
WES
t
WEH
tWES
tWEH
t
CEWA
t
CWHZ
tCEWA
tCLWA
t
CLWA
High-Z
/WAIT (Output)
Read Latency = 6
t
AC
t
AC
t
HZ
HZ
t
ACS
tACH
tACS
t
ACH
tAOS
t
AOS
t
OH
High-Z
High-Z
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Add
Q0
Q1
Q1
Q2
Q2
Q3
Q3
Q4
Q4
Q5
Q5
Q6
Q6
Q7
Q7
Add
t
High-Z
High-Z
Q0
Remark The above timing chart assumes read latency is set 6.
44
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 7-3. Burst Write Cycle Timing Chart (/CE1 = LOW Consecutive Access)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T0
T1
t
CLK
CLK (Input)
tCH
tCL
t
CHCL
tCHCL
tCVCV
t
CHV
t
CSV
t
CHV
tCHV tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
tAH
tVPL
tAH
t
CES
/OE (Input)
/WE (Input)
H
t
WES
t
WEH
tWES
tWEH
t
CEWA
tCEWA
t
CLWA
High-Z
/WAIT (Output)
DM (Input)
t
BDS
tBDH
Write Latency = 5
t
WDS
tWDH
t
ACS
tACH
tACS
tACH
High-Z
High-Z
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
DQ22 to DQ31 (Input)
Add
D0
D1
D1
D2
D2
D3
D3
D4
D4
D5
D5
D6
D6
D7
Add
High-Z
High-Z
D0
D7
Remark The above timing chart assumes write latency is set 5.
45
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 7-4. Burst Write Cycle Timing Chart (/CE1 Toggle Access)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T0
T1
t
CLK
CLK (Input)
tCH
tCL
t
CHCL
tCHCL
tCVCV
t
CHV
t
CSV
t
CHV
t
CHV
tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
tAH
tVPL
tAH
t
CES
tCEH
tCES
tCEH
tCES
tCEH
tCES
/OE (Input)
/WE (Input)
H
t
WES
t
WEH
tWES
tWEH
t
CEWA
t
CWHZ
tCEWA
tCLWA
t
CLWA
High-Z
/WAIT (Output)
DM (Input)
t
BDS
tBDH
Write Latency = 5
t
WDS
tWDH
t
ACS
tACH
tACS
tACH
High-Z
High-Z
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Input)
Add
D0
D1
D1
D2
D2
D3
D3
D4
D4
D5
D5
D6
D6
D7
Add
High-Z
High-Z
D0
D7
Remark The above timing chart assumes write latency is set 5.
46
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 7-5. Burst Read Termination Cycle Timing Chart (/CE1 Controlled)
T0
T1
T2
T3
T4
T5
T6
T7
T0
T1
T2
T3
T4
T5
T6
T7
t
CLK
CLK (Input)
tCH
tCL
t
CHV
t
CSV
t
CHV
tCHV tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
t
AH
t
VPL
tAH
t
CES
t
CEH
tCES
t
CEH
tCES
tOEH
t
OES
t
OLZ
tOEH
t
OES
tOEH
tOES
tOLZ
/OE (Input)
/WE (Input)
t
WES
t
WEH
tWES
tWEH
tCEWA
t
CWHZ
tCEWA
t
CLWA
tCLWA
High-Z
High-Z
/WAIT (Output)
Read Latency = 6
Read Latency = 6
t
AC
t
ACS
t
ACH
t
AOS
t
AC
t
HZ
tACS
t
ACH
tAOS
tAC
t
OH
High-Z
High-Z
High-Z
High-Z
High-Z
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Output)
Add
Q0
Q0
Add
Q0
Q1
Q2
Q2
High-Z
Q0
Q1
Note Burst Read Termination is available after the first read data output.
Figure 7-5 is the minimum cycle at Burst Read Termination to next operation.
Remark The above timing chart assumes read latency is set 6.
47
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
Figure 7-6. Burst Write Termination Cycle Timing Chart (/CE1 Controlled)
T0
T1
T2
T3
T4
T5
T6
T7
T0
T1
T2
T3
T4
T5
T6
t
CLK
CLK (Input)
tCH
tCL
t
CHV
t
CSV
t
CHV
tCHV tCSV tCHV
/ADV (Input)
/CE1 (Input)
t
VPL
t
AH
t
VPL
tAH
t
CES
t
CEH
t
CES
t
CEH
tCES
/OE (Input)
/WE (Input)
H
t
WES
t
WEH
tWES
tWEH
t
CEWA
tCWHZ
tCEWA
t
CLWA
tCLWA
High-Z
High-Z
/WAIT (Output)
Write Latency = 5
High-Z
Write Latency = 5
High-Z
t
ACS
t
ACH
t
WDS
tWDH
tACS
t
ACH
tWDS tWDH
High-Z
High-Z
A/DQ0 to A/DQ21 (Input)
Add
D0
Add
D0
D1
D1
High-Z
High-Z
D0
D0
DQ22 to DQ31 (Input)
DM0 to DM3 (Input)
L
Note Burst Write Termination is available after the first write data input.
Figure 7-6 is the minimum cycle at Burst Write Termination to next operation.
Remark The above timing chart assumes write latency is set 5.
48
Preliminary Data Sheet M17506EJ1V1DS
Figure 8-1. Mode Register Setting Timing Chart
6th Cycle
5th Cycle
4th Cycle
3rd Cycle
2nd Cycle
1st Cycle
H
L
CLK (Input)
t
VPL
t
VPL
t
VPL
t
VPL
t
VPL
t
t
VPL
/ADV (Input)
/CE1 (Input)
t
CS
tCP
t
CS
tCP
tCS
tCP
tCS
t
CP
t
CS
t
CP
CS
tCP
tMSC
tMSC
tMSC
t
MSC
tMSC
tMSC
t
CHZM
tOVL
/OE (Input)
/WE (Input)
t
WP
tWHP
t
WP
tWHP
tWP
t
WHP
tWP
tWHP
tWP
tWHP
tACM
tOLZM
tOHZM
t
AOSM
t
DW
t
DH
t
DW
tDH
t
AS
tAH
t
AS
tAH
t
DW
tDH
tDW
tDH
tDW
tDH
tAH
tAS
tAH
tAS
t
AS
tAH
tAS
tAH
Don't
Care
Don't
Care
Don't
Care
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Input/Output)
Note
Note
Note
Note
Code1
Note
Code2
Note
Code3
Don't
Care
Don't
Care
Don't
Care
Code1
Code2
Code3
μ
Note Address → All “1” (3FFFFFH)
Remark When setting the mode register, fix CLK to HIGH or LOW. If CLK is toggled, the mode register is not correctly set.
When the mode register is set, DM0 to DM3 are don’t care (HIGH or LOW).
μPD46128953-X
8. 2 Mode Register Setting Flow Chart
Figure 8-2. Mode Register Setting Flow Chart
Start
Read Operation
Address = 3FFFFFH
toggled the
No
No
/CE1 and /OE
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
No
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
No
No
Yes
Mode register setting exit
Write Data = Code1 Note 1
(A/DQ = 1)
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
No
Yes
Write Data = Code2 Note 2
Yes
No
No
No
Write Operation
Address = 3FFFFFH
toggled the /CE1
Yes
Write Data = Code3 Note 3
Yes
End
Re-setup the mode register
Notes1. Refer to Table 4-2.
2. Refer to Table 4-3.
3. Refer to Table 4-4.
50
Preliminary Data Sheet M17506EJ1V1DS
Figure 8-3. Mode Register Read Timing Chart
6th Cycle
5th Cycle
4th Cycle
3rd Cycle
2nd Cycle
1st Cycle
H
L
CLK (Input)
t
VPL
t
VPL
t
VPL
t
VPL
t
VPL
t
t
VPL
/ADV (Input)
/CE1 (Input)
t
CS
tCP
t
CS
tCP
tCS
tCP
tCS
t
CP
t
CS
t
CP
CS
tCP
tMSC
tMSC
tMSC
t
MSC
t
MSC
tMSC
t
CHZM
tOVL
tOVL
tOVL
/OE (Input)
/WE (Input)
t
WP
tWHP
t
WP
tWHP
tWP
tACM
t
ACM
tACM
tOLZM
tOLZM
tOLZM
tOHZM
t
AOSM
t
AOSM
tAOSM
t
DW
t
DH
t
DW
tDH
t
AS
tAH
t
AS
tAH
t
DW
tDH
tDW
tDH
tDW
tDH
tAH
tAS
tAH
tAS
t
AS
tAH
tAS
tAH
Don't
Care
Don't
Care
Don't
Care
A/DQ0 to A/DQ21 (Input/Output)
DQ22 to DQ31 (Input/Output)
Note
Note
Note
Note
Code1
Note
Code2
Note
Code3
Don't
Care
Don't
Care
Don't
Care
Code1
Code2
Code3
μ
Note Address → All “1” (3FFFFFH)
Remark When setting the mode register, fix CLK to HIGH or LOW. If CLK is toggled, the mode register is not correctly set.
When the mode register is set, DM0 to DM3 are don’t care (HIGH or LOW).
μPD46128953-X
8. 4 Mode Register Read Flow Chart
Figure 8-4. Mode Register Read Flow Chart
Start
Read Operation
Address = 3FFFFFH
toggled the
No
No
/CE1 and /OE
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
No
Yes
Write Operation
Address = 3FFFFFH
toggled the /CE1
No
No
Yes
Mode register setting exit
Write Data = Code1 Note 1
(A/DQ = 0)
Yes
Read Operation
Address = 3FFFFFH
toggled the
No
/CE1 and /OE
Yes
Read Data = Code2 Note 2
Read Operation
Address = 3FFFFFH
toggled the
No
/CE1 and /OE
Yes
Read Data = Code3 Note 3
End
Impossible Mode Register Read
Notes1. Refer to Table 4-2.
2. Refer to Table 4-3.
3. Refer to Table 4-4.
52
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
9. Standby Mode Timing Charts
Figure 9-1. Standby Mode 2 (data hold: 64M bits / 32M bits / 16M bits) Entry / Exit Timing Chart
CLK (Input)
CE2 (Input)
/CE1 (Input)
t
CE2S
t
CES
tCES
t
CHML
tMHCL1
Standby
mode 1
Standby mode 2
(Data hold: 64M bits / 32M bits / 16M bits)
Figure 9-2. Standby Mode 2 (data not held) Entry / Exit Timing Chart
CLK (Input)
CE2 (Input)
/CE1 (Input)
t
CE2S
t
CES
tCES
t
CHML
tMHCL2
Standby
mode 1
Standby mode 2
(Data not held)
Standby Mode 2 Entry / Exit Timing
Parameter
Standby mode 2 entry /CE1 HIGH to CE2 LOW
Standby mode 2 exit to normal operation CE2 HIGH to /CE1 LOW
Standby mode 2 exit to normal operation CE2 HIGH to /CE1 LOW
/CE1 setup time to CLK
Symbol
tCHML
MIN.
0
MAX.
Unit
ns
Note
tMHCL1
tMHCL2
tCES
30
300
5
ns
1
2
μs
ns
CE2 hold time to CLK
tCE2S
1
ns
Notes1. This is the time it takes to return to normal operation from Standby Mode 2 (data hold: 64M bits / 32M bits /
16M bits).
2. This is the time it takes to return to normal operation from Standby Mode 2 (data not held).
53
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
10. Package Drawing
The following is a package drawing of package sample.
127-PIN PLASTIC FBGA (13.0x11.5)
D
ZE
ZD
W S A
A
14
13
12
11
10
9
B
8
E
7
6
5
4
3
2
1
PNM L K J HG F E DC B A
W S B
x4
INDEX MARK
v
A
A2
y1
S
S
(UNIT :mm)
ITEM MILLIMETERS
e
A1
S AB
y
S
13.00
11.50
D
E
M
b
x
v
0.15
0.20
0.80
1.50
0.22
1.28
0.40
0.08
0.10
0.20
1.30
0.55
w
e
A
A1
A2
b
This package drawing is a preliminary version. It may be changed in the future.
x
y
y1
ZD
ZE
54
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
11. Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the μPD46128953-X.
Type of Surface Mount Device
μPD46128953F1-EB1: 127-pin PLASTIC FBGA (13.0 x 11.5)
55
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
[ MEMO ]
56
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
[ MEMO ]
57
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
[ MEMO ]
58
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
NOTES FOR CMOS DEVICES
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
1
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between VIL (MAX) and
VIH (MIN).
HANDLING OF UNUSED INPUT PINS
2
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
3
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
4
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
5
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
6
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
59
Preliminary Data Sheet M17506EJ1V1DS
μPD46128953-X
•
The information in this document is current as of September, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
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•
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M8E 02. 11-1
相关型号：
UPD46128953F1-EB1
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
NEC
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