UPG131G [NEC]

L-BAND SPDT SWITCH; L波段单刀双掷开关
UPG131G
型号: UPG131G
厂家: NEC    NEC
描述:

L-BAND SPDT SWITCH
L波段单刀双掷开关

开关 光电二极管
文件: 总12页 (文件大小:88K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG133G  
L-BAND SPDT SWITCH  
DESCRIPTION  
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular  
or cordless telephone application.  
The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.  
It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to  
miniaturizing the system.  
It can be used in wide-band switching applications.  
FEATURES  
Maximum transmission power : 0.25 W (typ.)  
Low insertion loss  
High switching speed  
Small package  
:
:
:
0.6 dB (typ.) at f = 2 GHz  
10 ns  
8 pins SSOP  
APPLICATION  
Digital cordless telephone  
:
PHS, PCS, DECT etc.  
Digital hand-held cellular phone, WLAN  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
8 pin plastic SSOP  
PACKING FORM  
Carrier tape width 12 mm.  
QTY 2kp/Reel.  
µPG133G-E1  
For evaluation sample order, please contact your local NEC sales office.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Control Voltage  
VCONT  
Pin  
–6 to +0.6  
25  
V
dBm  
W
Input Power  
Total Power Dissipation  
Operating Case Temperature  
Storage Temperature  
Ptot  
0.2  
Topt  
Tstg  
–65 to +90  
–65 to +150  
˚C  
˚C  
CAUTION: The IC must be handled with care to prevent static discharge because its circuit is composed  
of GaAs MES FET.  
Document No. P10733EJ2V0DS00 (2nd edition)  
Date Published April 1996 P  
Printed in Japan  
1996  
©
µPG133G  
PIN CONNECTION DIAGRAM (Top View)  
1. VCONT2  
2. OUT2  
3. GND  
4. GND  
5. IN  
1
2
3
4
8
7
6
5
6. GND  
7. OUT1  
8. VCONT1  
SPDT SWITCH IC SERIES PRODUCTS  
PART  
Pin (1dB)  
(dBm)  
LINS  
(dB)  
ISL  
VCONT  
(V)  
PACKAGE  
APPLICATIONS  
NUMBER  
(dB)  
µPG130GR  
µPG131GR  
µPG130G  
µPG131G  
µPG132G  
µPG133G  
+34  
+30  
+34  
+30  
+30  
+25  
0.5 @1G  
0.6 @2G  
0.5 @1G  
0.6 @2G  
0.6 @2G  
0.6 @2G  
32 @1G  
23 @2G  
32 @1G  
23 @2G  
22 @2G  
20 @2G  
–5/0  
–4/0  
–5/0  
–4/0  
+3/0  
–3/0  
8 pin SOP  
(225 mil)  
PDC, IS-136, PHS  
PHS, PCS, WLAN  
PDC, IS-136, PHS  
PHS, PCS, WLAN  
PHS, PCS, WLAN  
DIVERSITY etc  
8 pin SSOP  
(175 mil)  
Remark: As for detail information of series products, please refer to each data sheet.  
EQUIVALENT CIRCUIT  
OUT1  
GND  
VCONT1  
IN  
VCONT2  
GND  
OUT2  
2
µPG133G  
RECOMMENDED OPERATING CONDITIONS  
PARAMETER  
Control Voltage (ON)  
Control Voltage (OFF)  
Input Power Level  
SYMBOL  
VCONT  
VCONT  
Pin  
MIN.  
–0.2  
–5.0  
TYP.  
0
MAX.  
+0.2  
–2.7  
24  
UNIT  
V
–3.0  
21  
V
dBm  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTICS  
Insertion Loss  
SYMBOL  
MIN.  
TYP.  
0.6  
MAX.  
1.0  
UNIT  
dB  
TEST CONDITION  
LINS  
Note1  
0.8  
f = 2.5 GHz  
Isolation  
ISL  
20  
dB  
Note1  
20  
f = 2.5 GHz  
Input Return Loss  
Output Return Loss  
RLin  
RLout  
11  
11  
21  
20  
20  
25  
dB  
dB  
f = 100 MHz to 2 GHz  
VCONT1 = 0 V  
VCONT2 = –3 V  
Input Power at 1dB  
Compression Point  
Pin (1dB)Note2  
dBm  
or  
Switching Speed  
Control Current  
tsw  
10  
ns  
VCONT1 = –3 V  
VCONT2 = 0 V  
ICONT  
50  
µA  
Notes 1: Characteristic for reference at 2.0 to 2.5 GHz  
2: Pin (1dB) is measured the input power level when the insertion loss increase more 1dB than that of linear  
range.  
All other characteristics are measured in linear range.  
NOTE ON CORRECT USE  
Insertion loss and isolation of the IN-OUT2 is better than that of IN-OUT1, because No. 7 pin (OUT1) is placed  
to same side of No. 5 pin (IN).  
The distance between IC’s GND pins and ground pattern of substrate should be as shorter as possible to avoid  
parasitic parameters.  
3
µPG133G  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
Note This data is including loss of the test fixture.  
IN-OUT1 INSERTION LOSS vs. FREQUENCY  
+2.0  
IN-OUT1 ISOLATION vs. FREQUENCY  
0
VCONT1 = –3 V  
CONT2 = 0 V  
VCONT1 = 0 V  
CONT2 = –3 V  
V
P
V
P
in = 0 dBm  
in = 0 dBm  
+1.0  
0
–10  
–20  
30  
1.0  
2.0  
3.0  
40  
50  
100 M 200 M  
500 M 1 G  
2 G 3 G  
100 M 200 M  
500 M 1 G  
ISL  
2 G 3 G  
f - Frequency - Hz  
f - Frequency - Hz  
LINS  
OUT1  
OUT2  
OUT1  
OUT2  
IN  
IN  
50  
50 Ω  
IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY  
+10  
IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY  
+10  
V
CONT1 = –3 V  
CONT2 = 0 V  
V
CONT1 = –3 V  
CONT2 = 0 V  
V
V
P
in = 0 dBm  
P
in = 0 dBm  
0
–10  
– 20  
0
–10  
20  
– 30  
– 40  
30  
40  
100 M 200 M  
500 M 1 G  
2 G 3 G  
100 M 200 M  
500 M 1 G  
2 G 3 G  
f - Frequency - Hz  
f - Frequency - Hz  
RLOUT  
RLin  
OUT1  
OUT2  
OUT1  
OUT2  
IN  
IN  
50 Ω  
50 Ω  
4
µPG133G  
IN-OUT2 ISOLATION vs. FREQUENCY  
IN-OUT2 INSERTION LOSS vs. FREQUENCY  
+2.0  
0
–10  
–20  
30  
V
V
CONT1 = 0 V  
V
V
CONT1 = –3 V  
CONT2 = 0 V  
CONT2 = –3 V  
Pin = 0 dBm  
Pin = 0 dBm  
+1.0  
0
1.0  
2.0  
3.0  
40  
50  
100 M 200 M  
500 M 1 G  
2 G 3 G  
100 M 200 M  
500 M 1 G  
2 G 3 G  
f - Frequency - Hz  
f - Frequency - Hz  
OUT1  
OUT1  
50  
50 Ω  
IN  
IN  
ISL  
OUT2  
OUT2  
LINS  
IN-OUT2 INPUT RETURN LOSS vs. FREQUENCY  
+10  
IN-OUT2 OUTPUT RETURN LOSS vs. FREQUENCY  
+10  
V
V
CONT1 = 0 V  
V
V
CONT1 = 0 V  
CONT2 = –3 V  
CONT2 = –3 V  
Pin = 0 dBm  
Pin = 0 dBm  
0
–10  
– 20  
0
–10  
20  
– 30  
– 40  
30  
40  
100 M 200 M  
500 M 1 G  
2 G 3 G  
100 M 200 M  
500 M 1 G  
2 G 3 G  
f - Frequency - Hz  
f - Frequency - Hz  
RLin  
OUT1  
50 Ω  
OUT1  
IN  
50 Ω  
OUT2  
IN  
RLOUT  
OUT2  
5
µPG133G  
IN-OUT2 Pin vs. Pout  
V
V
CONT1 = 0 V  
CONT2 = –3 V  
30  
28  
f = 1.9 GHz  
26  
24  
OUT1  
50  
IN  
22  
20  
18  
OUT2  
18 20 22 24 26 28 30  
Pin - Input Power - dBm  
INSERTION LOSS, 2fo, 3fo vs.  
AMBIENT TEMPERATURE  
INPUT POWER vs. OUTPUT POWER  
VCONT1 = 0 V  
VCONT1 = 0 V  
VCONT2 = –3 V  
f = 2GHz  
Non-modulated  
signal input (CW)  
VCONT2 = –3 V  
f = 2 GHz  
1.0  
0.8  
Pin = +20 dBm  
Signal input (CW)  
LINS  
30  
25  
20  
15  
–50  
–60  
–70  
0.6  
3fo  
2fo  
TA = –50 ˚C  
TA = +25 ˚C  
TA = +90 ˚C  
–100  
–50  
0
+50  
+100  
15  
20  
25  
30  
Pin (dBm)  
TA (˚C)  
6
µPG133G  
TEST BOARD  
IN  
0.9 mm width.  
0.4 mm thickness  
teflon glass  
R = 50 Ω  
NEC  
G130/131  
Using the same board that of  
µPG130/131G  
R
R
OUT1  
VCONT1  
V
CONT2  
OUT2  
TEST CIRCUIT  
1 000 pF  
50 Ω  
50 Ω  
V
CONT1 = –3 V/0 V  
1
2
3
4
8
7
6
5
V
CONT2 = 0 V/–3 V  
1 000 pF  
OUT2  
OUT1  
IN  
Z
O
O
= 50 Ω  
= 50 Ω  
ZO = 50 Ω  
Z
7
µPG133G  
µPG133G TRUTH TABLE OF SWITCHING BY CONDITION OF CONTROL VOLTAGE  
VCONT1  
0 V  
–3 V  
OUT1  
OUT2  
OUT1  
OUT2  
IN  
IN  
0 V  
VCONT2  
OUT1  
OUT2  
OUT1  
OUT2  
–3 V  
IN  
IN  
8-PIN PLASTIC SHRINK SOP (175 mil) (Unit mm)  
8
5
Detail of lead end  
1
4
4.94 ±0.2  
3.2 ±0.1  
3.0 MAX.  
0.87 ±0.2  
0.5 ±0.2  
0.65  
0.575 MAX.  
0.3+00..0150  
0.15  
0.10  
M
8
µPG133G  
Floating the µPG133G  
It is possible to use the µPG133G with only a single +3 V supply by employing a technique known as “floating”.  
When the IC is floated using a +3 V supply, the voltage levels used to control the switch are elevated above ground  
by +3 V.  
When the µPG133G is floated it is necessary to use DC blocking (C2, C3, C5) and grounding (C1, C4) capacitors.  
This enables the IC to isolated so that +3 V can be applied to RF line. The value for DC blocking capacitors should  
be chosen to accommodate the frequency of operation. Grounding capacitors are required to float the IC above  
ground. The value for grounding capacitor should be chosen to accommodate the frequency of operation.  
It is not recommended to float the µPG133G for wide band application.  
(Floating the µPG133G with +3 V/0 V supply at 2 GHz-band, BW 50 MHz)  
GND  
C2  
C1  
4
OUT2  
1
VCONT2  
PIN CONNECTIONS  
1. VCONT2  
2. OUT2  
3. GND  
V
CONT1  
8
5
C3  
4. GND  
IN  
5. IN  
6. GND  
7. OUT1  
8. VCONT1  
OUT1  
C4  
C5  
GND  
C1, C4 = 10 pF below : Grounding capacitor  
C2, C3, C5 = 100 pF : DC blocking capacitor  
The distance between grounding capacitor and IC’s GND pins, grounding capacitor and ground of the  
substrate should be as shorter as possible to avoid the parasitic parameters. IC’s GND pin, No. 3, No. 4 and No.  
6 are connected inside of the IC.  
9
µPG133G  
RECOMMENDED SOLDERING CONDITIONS  
This product should be soldered in the following recommended conditions. Other soldering methods and conditions  
than the recommended conditions are to be consulted with our sales representatives.  
[µPG133G]  
Recommended condition  
Soldering process  
Infrared ray reflow  
Soldering conditions  
Package peak temperature: 230 ˚C  
symbol  
IR30-00-2  
Hour: within 30 s. (more than 210 ˚C)  
Note  
Time: 2 time, Limited days: no.  
VPS  
Package peak temperature: 215 ˚C  
Hour: within 40 s. (more than 200 ˚C),  
VP15-00-2  
WS60-00-1  
Note  
Time: 2 time, Limited days: no.  
Wave Soldering  
Pin part heating  
Soldering tub temperature: less than 260 ˚C, Hour: within 10 s.  
Note  
Time: 1 time, Limited days: no.  
Pin area temperature: less than 300 ˚C, Hour: within 10 s.  
Note  
Limited days: no.  
Note It is storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 %, RH.  
Caution The combined use of soldering method is to be avoided (However, except the pin area heating  
method).  
10  
µPG133G  
[MEMO]  
11  
µPG133G  
Caution  
The Great Care must be taken in dealing with the devices in this guide.  
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is  
designated as harmful substance according to the Japanese law concerned.  
Keep the law concerned and so on, especially in case of removal.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

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